Semiconductor device

By adopting a multi-layered basic substrate and through-pass structure in semiconductor devices, the problem of improving integration density and reliability in the prior art is solved, efficient electrical connection and signal transmission are achieved, and the performance of semiconductor devices is improved.

CN119650539APending Publication Date: 2025-03-18SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
CN202411163138.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-09-18
Filing Date
2024-08-23
Publication Date
2025-03-18

AI Technical Summary

Technical Problem

Existing semiconductor devices have challenges in improving integration density and reliability, especially while maintaining high performance and versatility, making it difficult to effectively increase integration density.

Method used

The base substrate adopts a multi-layer structure, including a core substrate, an interconnect substrate and a through-pass structure, realizes efficient electrical connection between the semiconductor chip and the substrate by penetrating through the through electrodes and through holes of the core substrate and the interconnect substrate, and combining the insulating layer and conductive plugs.

Benefits of technology

The integration density and reliability of semiconductor devices are improved, and the packaging size is reduced and signal transmission efficiency is improved by optimizing the electrical signal path.

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Abstract

A semiconductor device includes a base substrate and a semiconductor chip disposed on the base substrate. The base substrate includes: a core substrate; a first interconnection substrate disposed on a first surface of the core substrate and a second surface opposite the first surface; a first through electrode penetrating the core substrate; a second through electrode penetrating the core substrate and the first interconnection substrate, the second through electrode having the same central axis as the first through electrode, and having a width narrower than a width of the first through electrode; and a first insulating layer disposed between the first through electrode and the second through electrode and surrounding at least a portion of a side surface of the second through electrode.
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