Microstrip line design method, device, equipment and medium

Abstract

The invention discloses a microstrip line design method, device, equipment and medium, and relates to the field of microwave and radio frequency engineering.The microstrip line design method comprises the steps that the dielectric constant of a microstrip line is determined according to the substrate material of the microstrip line; determining target source impedance and target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance of the tail end of the narrow line segment of the microstrip line; the target load impedance corresponds to the impedance of the tail end of the wide line segment of the microstrip line; performing three-section impedance conversion on the target source impedance and the target load impedance, and determining characteristic impedance of different positions of the microstrip line; wherein the three-section impedance transformation comprises the following steps: performing linear function transformation on the wide line section, performing exponential function transformation on the narrow line section, and performing Clopenstein function transformation on a middle section except the wide line section and the narrow line section; and determining the widths of different positions of the microstrip line according to the characteristic impedance of different positions of the microstrip line and the dielectric constant.

Description

Technical Field

[0001] The present invention relates to the field of microwave and radio frequency engineering, and in particular to a design method, device, equipment and medium for a microstrip line. Background Art

[0002] In the field of microwave and radio frequency engineering, the characteristic is that when designing radio frequency amplifier circuits, in order to reduce reflection and loss of signals during transmission, it is usually necessary to use specific impedance matching technology to improve the impedance mismatch between ports and components. Microstrip lines, as a basic transmission line structure, are widely used in high-frequency impedance matching.

[0003] The microstrip line achieves impedance matching through a continuous impedance gradient area. However, the existing microstrip line design method often causes the impedance at the port of the microstrip line to not match the actual target impedance, which in turn causes a sudden impedance change at the port, resulting in signal reflection and loss.

[0004] Therefore, how to design a microstrip line so that the impedance at the port of the microstrip line matches the target impedance actually required becomes a technical problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0005] In view of the above technical status, the present invention provides a design method, device, equipment and medium for a microstrip line.

[0006] In order to achieve the above object, the present invention provides the following technical solutions:

[0007] A method for designing a microstrip line, comprising:

[0008] Determining the dielectric constant of the microstrip line according to the substrate material of the microstrip line;

[0009] Determine a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line;

[0010] Performing a three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedances at different positions of the microstrip line; wherein the three-stage impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the middle segment other than the wide line segment and the narrow line segment;

[0011] The width of the microstrip line at different positions is determined according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

[0012] In an optional implementation manner of the present application, performing three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedance at different positions of the microstrip line includes:

[0013] Performing Kloppenstein function transformation on the target source impedance and the target load impedance to determine the intermediate characteristic impedances at different positions of the intermediate segment;

[0014] Performing a linear function transformation on the maximum value of the intermediate characteristic impedance and the target load impedance to determine the first characteristic impedance at different positions of the wide line segment;

[0015] An exponential function transformation is performed on the minimum value of the intermediate characteristic impedance and the target source impedance to determine the second characteristic impedance at different positions of the narrow line segment.

[0016] In an optional implementation of the present application, the Kloppenstein function transformation is expressed by the following formula:

[0017]

[0018] Wherein, Z0(z) represents the intermediate characteristic impedance at different positions of the intermediate segment; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents a transcendental function; z represents different positions of the intermediate segment; l1 represents the length of the intermediate segment; U(x) represents a unit transition function; C = cos h -1 [ln(Z L / Z S ) / Γ m ], where Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant.

[0019] In an optional implementation manner of the present application, the linear function transformation is expressed by the following formula:

[0020] Z0(z)=Z m +(Z L -Z m ) z / l2;

[0021] Wherein, Z0(z) represents the first characteristic impedance at different positions of the wide line segment; Z m represents the maximum value of the intermediate characteristic impedance; Z L represents the target load impedance; z represents the different positions of the middle segment; l2 represents the length of the wide line segment.

[0022] In an optional implementation manner of the present application, the exponential function transformation is expressed by the following formula:

[0023] Z0(z)=Z S e az ;

[0024] Wherein, Z0(z) represents the second characteristic impedance at different positions of the narrow line segment; z represents different positions of the middle segment; Z S represents the target source impedance; a represents the transformation coefficient, and the size of a is related to the length of the narrow line segment.

[0025] In an optional implementation manner of the present application, the width of the microstrip line at different positions is determined according to the characteristic impedance and the dielectric constant at different positions of the microstrip line, and is implemented by the following formula:

[0026]

[0027] Wherein, W represents the width of the microstrip line; ε r represents the dielectric constant; h represents the thickness of the microstrip line; Z0 represents the characteristic impedance;

[0028] Compared with the prior art, the design method of the microstrip line provided by the present invention performs a three-stage impedance transformation on the target source impedance and the target load impedance, and makes up for the difference between the impedance at the microstrip line port constructed by the Kloppenstein function transformation and the actual target impedance through linear function transformation and exponential function transformation. It can solve the problem of impedance step at the port while satisfying a better reflection coefficient at the port, and prevent the occurrence of oscillation problems to a certain extent.

[0029] The present invention also provides a microstrip line design device, comprising:

[0030] A dielectric constant determining unit, used to determine the dielectric constant of the microstrip line according to the substrate material of the microstrip line;

[0031] A target impedance determination unit, used to determine a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line;

[0032] An impedance transformation unit is used to perform three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedance of different positions of the microstrip line; wherein the three-stage impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the middle segment other than the wide line segment and the narrow line segment;

[0033] The width design unit is used to determine the width of the microstrip line at different positions according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

[0034] Compared with the prior art, the beneficial effects of the microstrip line design device provided by the present invention are the same as the beneficial effects of the microstrip line design method described in the above technical solution, which will not be described in detail here.

[0035] The present invention also provides an electronic device, comprising:

[0036] processor;

[0037] a memory for storing instructions executable by the processor;

[0038] The processor is used to execute the above-mentioned microstrip line design method by running the instructions in the memory.

[0039] Compared with the prior art, the beneficial effects of the electronic device provided by the present invention are the same as the beneficial effects of the microstrip line design method described in the above technical solution, which will not be described in detail here.

[0040] The present invention also provides a computer storage medium, in which instructions are stored. When the instructions are executed, the above-mentioned microstrip line design method is implemented.

[0041] Compared with the prior art, the beneficial effects of the computer storage medium provided by the present invention are the same as the beneficial effects of the microstrip line design method described in the above technical solution, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0043] Figure 1 A flow chart of a microstrip line design method provided in an embodiment of the present application;

[0044] Figure 2 A schematic diagram of the structure of a portion of a microstrip line according to an embodiment of the present application;

[0045] Figure 3A schematic diagram of reflection coefficient at a microstrip line port provided in an embodiment of the present application;

[0046] Figure 4 A structural diagram of a design device for a microstrip line provided in an embodiment of the present application;

[0047] Figure 5 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0048] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their order is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0049] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0050] In the present invention, "at least one" means one or more, and "plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b, c can be single or multiple.

[0051] In the field of microwave and radio frequency engineering, the characteristic is that when designing radio frequency amplifier circuits, in order to reduce reflection and loss of signals during transmission, it is usually necessary to use specific impedance matching technology to improve the impedance mismatch between ports and components. Microstrip lines, as a basic transmission line structure, are widely used in high-frequency impedance matching.

[0052] The microstrip line achieves impedance matching through a continuous impedance gradient area. However, the existing microstrip line design method often causes the impedance at the port of the microstrip line to not match the actual target impedance, which in turn causes a sudden impedance change at the port, resulting in signal reflection and loss.

[0053] Therefore, how to design a microstrip line so that the impedance at the port of the microstrip line matches the target impedance actually required becomes a technical problem that needs to be solved urgently by those skilled in the art.

[0054] In view of the above technical status, the present application provides a design method, device, equipment and medium for a microstrip line, which are described in detail one by one in the following embodiments.

[0055] Please refer to Figure 1 , Figure 1 A flow chart of a microstrip line design method provided in an embodiment of the present application.

[0056] like Figure 1 As shown, the design method of the microstrip line includes the following S101 to S104:

[0057] S101, determining a dielectric constant of the microstrip line according to a substrate material of the microstrip line.

[0058] Microstrip line is a commonly used planar transmission line, widely used in microwave and radio frequency circuits. It consists of a layer of conductor (usually copper) and a ground plane, with a layer of dielectric material in between. The main function of microstrip line is to transmit high-frequency signals, and plays an important role in radio frequency circuits such as antennas, filters, couplers, and amplifiers.

[0059] Please refer to Figure 2 , Figure 2 It is a schematic diagram of the structure of a part of the microstrip line of an embodiment of the present application.

[0060] like Figure 2 As shown, the width of the microstrip line gradually decreases from end Z1 to end Z2, and accordingly, the impedance of Z1 is smaller than the impedance of end Z2.

[0061] S102, determining a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of a narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of a wide segment of the microstrip line.

[0062] The target source impedance refers to the impedance inside the signal source, including the combination of the signal source's own resistance, inductance, capacitance and other components. The source impedance determines the power that the signal source can provide and the matching between the signal source and the transmission line. If the source impedance does not match the characteristic impedance of the transmission line, it will cause signal reflection, thus affecting the signal transmission efficiency and system stability.

[0063] The target load impedance refers to the impedance presented by the load (such as antenna, amplifier, filter, etc.) that receives the signal, including the combination of the load's own resistance, inductance, capacitance and other components. The load impedance determines the absorption of the signal at the end of the transmission line. If the load impedance does not match the characteristic impedance of the transmission line, it will also cause signal reflection, thereby affecting the signal transmission efficiency and system stability.

[0064] like Figure 1 As shown, in the embodiment of the present application, the target source impedance refers to the impedance of the end Z2 of the narrow segment of the microstrip line, and the target load impedance refers to the impedance of the end Z1 of the wide segment of the microstrip line.

[0065] S103, performing a three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedances at different positions of the microstrip line; wherein the three-stage impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the middle segment outside the wide line segment and the narrow line segment.

[0066] In the prior art, impedance transformation is usually performed on the microstrip line by using an impedance transformation function (ie, Clopens function) for the entire microstrip line.

[0067] Specifically, the functional expression of the Kloppenstein function is shown in the following formula (1):

[0068]

[0069] Where Z0(z) represents the characteristic impedance at different positions of the microstrip line; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents a transcendental function; z represents different positions of the microstrip line; l represents the length of the microstrip line; U(x) represents a unit transition function; C = cos h -1 [ln(Z L / Z S ) / Γ m ], where Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant.

[0070] Furthermore, after performing impedance transformation to obtain characteristic impedances at different positions of the microstrip line, the widths of the microstrip line at different positions can be calculated in combination with the characteristic impedances at different positions.

[0071] Specifically, the width of the microstrip line at different positions can be determined by the following formula (2):

[0072]

[0073] Wherein, W represents the width of the microstrip line; ε r represents the dielectric constant; h represents the thickness of the microstrip line; Z0 represents the characteristic impedance;

[0074] However, the width of the microstrip line calculated in this way will cause the actual impedance of the final microstrip line to be different from the target load impedance and the target source impedance. For example, assuming that a microstrip line with a target source impedance of 50Ω and a target load impedance of 5Ω is to be designed, the final source impedance of the microstrip line obtained by the above method may be 40Ω, and the load impedance may be 10Ω. In other words, the impedance at the port of the microstrip line obtained in this way is abrupt.

[0075] In order to avoid impedance surges at the ports of the microstrip line, the above S103 includes the following S1 to S3:

[0076] S1, performing Kloppenstein function transformation on the target source impedance and the target load impedance to determine the intermediate characteristic impedances at different positions of the intermediate segment;

[0077] S2, performing a linear function transformation on the maximum value of the intermediate characteristic impedance and the target load impedance to determine the first characteristic impedance at different positions of the wide line segment;

[0078] S3, performing exponential function transformation on the minimum value of the intermediate characteristic impedance and the target source impedance to determine the second characteristic impedance at different positions of the narrow line segment.

[0079] That is, first, based on the existing method, the target source impedance and the target load impedance are transformed by the Kloppenstein function to obtain the intermediate characteristic impedance at both ends of the microstrip line of the final design (that is, the maximum and minimum values ​​of the intermediate characteristic impedance). Then, a section of the microstrip line is fitted through the linear transformation function to make up for the difference between the maximum value of the intermediate characteristic impedance and the target load impedance, and another section of the microstrip line is fitted through the exponential transformation function to make up for the difference between the minimum value of the intermediate characteristic impedance and the target source impedance.

[0080] Specifically, for the above S1, the process of performing Kloppenstein function transformation on the target source impedance and the target load impedance is substantially the same as the process of performing Kloppenstein function transformation by formula (1) in the above prior art. Specifically, it can be expressed by the following formula (3):

[0081]

[0082] Wherein, Z0(z) represents the intermediate characteristic impedance at different positions of the intermediate segment; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents a transcendental function; z represents different positions of the intermediate segment; l1 represents the length of the intermediate segment; U(x) represents a unit transition function; C = cos h -1 [ln(Z L / Z S ) / Γ m ], where Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant.

[0083] For the above S2, the linear function transformation can be expressed by the following formula (4):

[0084] Z0(z)=Z m +(Z L -Z m ) z / l2 (4);

[0085] Wherein, Z0(z) represents the first characteristic impedance at different positions of the wide line segment; Z m represents the maximum value of the intermediate characteristic impedance; Z L represents the target load impedance; z represents the different positions of the middle segment; l2 represents the length of the wide line segment.

[0086] For the above S3, the exponential function transformation can be expressed by the following formula (5):

[0087] Z0(z)=Z S e az ;

[0088] Wherein, Z0(z) represents the second characteristic impedance at different positions of the narrow line segment; z represents different positions of the middle segment; Z S represents the target source impedance; a represents the transformation coefficient, and the size of a is related to the length of the narrow line segment.

[0089] Finally, after the intermediate characteristic impedance, the first characteristic impedance, and the second characteristic impedance at different positions of the microstrip line are obtained, the following S104 may be performed.

[0090] S104, determining the width of the microstrip line at different positions according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

[0091] That is, in combination with the above formula (2), the width of the microstrip line at different positions is determined, and then a complete microstrip line is designed.

[0092] Furthermore, in the actual application process, a microstrip line with a target source impedance of 50Ω and a target load impedance of 5Ω is designed by the above method, and its reflection coefficient is finally tested as follows: Figure 3 As shown, Figure 3 A schematic diagram of the reflection coefficient at a microstrip line port provided in an embodiment of the present application.

[0093] like Figure 3 As shown, within the ultra-wide frequency band (3 GHz to 10 GHz), the reflection coefficient of the microstrip line is less than -20 dB. That is to say, the design method of the microstrip line provided in the embodiment of the present application can achieve a result of smaller reflection at the port within the broadband.

[0094] In summary, the microstrip line design method provided in the embodiment of the present application performs a three-stage impedance transformation on the target source impedance and the target load impedance, and makes up for the difference between the impedance at the microstrip line port constructed by the Kloppenstein function transformation and the actual target impedance through linear function transformation and exponential function transformation. It can solve the problem of impedance step at the port while satisfying a good reflection coefficient at the port, and prevent the occurrence of oscillation problems to a certain extent.

[0095] This application also provides a microstrip line design device, please refer to Figure 4 , Figure 4 A structural diagram of a design device for a microstrip line provided in an embodiment of the present application.

[0096] like Figure 4 As shown, the design device of the microstrip line comprises:

[0097] A dielectric constant determining unit 401, configured to determine the dielectric constant of the microstrip line according to the substrate material of the microstrip line;

[0098] The target impedance determination unit 402 is used to determine the target source impedance and target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line;

[0099] The impedance transformation unit 403 is used to perform three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedance of different positions of the microstrip line; wherein the three-stage impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the middle segment other than the wide line segment and the narrow line segment;

[0100] The width design unit 404 is used to determine the width of the microstrip line at different positions according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

[0101] In an optional implementation manner of the present application, performing three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedance at different positions of the microstrip line includes:

[0102] Performing Kloppenstein function transformation on the target source impedance and the target load impedance to determine the intermediate characteristic impedances at different positions of the intermediate segment;

[0103] Performing a linear function transformation on the maximum value of the intermediate characteristic impedance and the target load impedance to determine the first characteristic impedance at different positions of the wide line segment;

[0104] An exponential function transformation is performed on the minimum value of the intermediate characteristic impedance and the target source impedance to determine the second characteristic impedance at different positions of the narrow line segment.

[0105] In an optional implementation of the present application, the Kloppenstein function transformation is expressed by the following formula:

[0106]

[0107] Wherein, Z0(z) represents the intermediate characteristic impedance at different positions of the intermediate segment; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents a transcendental function; z represents different positions of the intermediate segment; l1 represents the length of the intermediate segment; U(x) represents a unit transition function; C = cos h -1 [ln(Z L / Z S ) / Γ m ], where Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant.

[0108] In an optional implementation manner of the present application, the linear function transformation is expressed by the following formula:

[0109] Z0(z)=Z m +(Z L -Z m ) Z / l2;

[0110] Wherein, Z0(z) represents the first characteristic impedance at different positions of the wide line segment; Z m represents the maximum value of the intermediate characteristic impedance; Z L represents the target load impedance; z represents the different positions of the middle segment; l2 represents the length of the wide line segment.

[0111] In an optional implementation manner of the present application, the exponential function transformation is expressed by the following formula:

[0112] Z0(z)=Z S e az ;

[0113] Wherein, Z0(z) represents the second characteristic impedance at different positions of the narrow line segment; z represents different positions of the middle segment; Z S represents the target source impedance; a represents the transformation coefficient, and the size of a is related to the length of the narrow line segment.

[0114] In an optional implementation manner of the present application, the width of the microstrip line at different positions is determined according to the characteristic impedance and the dielectric constant at different positions of the microstrip line, and is implemented by the following formula:

[0115]

[0116] Wherein, W represents the width of the microstrip line; ε r represents the dielectric constant; h represents the thickness of the microstrip line; Z0 represents the characteristic impedance;

[0117] The above-mentioned device embodiment provided in this embodiment and the method embodiment of the present application belong to the same application concept. For the technical details not fully described in this embodiment, please refer to the specific processing content of the microstrip line design method provided in the above-mentioned embodiment of the present application, which will not be repeated here.

[0118] The present application also provides an electronic device, such as Figure 5 As shown, Figure 5 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0119] like Figure 5 As shown, the electronic device comprises:

[0120] Processor 210;

[0121] A memory 200 for storing instructions executable by the processor 210;

[0122] The processor 210 is used to execute the microstrip line design method disclosed in any of the above embodiments by running the instructions in the memory 200.

[0123] The processor 210, the memory 200, the communication interface 220, the input device 230 and the output device 240 are connected to each other via a bus.

[0124] A bus may include a pathway that transfers information between components of a computer system.

[0125] The processor 210 may be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program of the scheme of the present invention. It may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0126] The processor 210 may include a main processor, and may also include a baseband chip, a modem, and the like.

[0127] The memory 200 stores a program for executing the technical solution of the present invention, and may also store an operating system and other key services. Specifically, the program may include a program code, and the program code includes a computer operation instruction. More specifically, the memory 200 may include a read-only memory (ROM), other types of static storage devices that can store static information and instructions, a random access memory (RAM), other types of dynamic storage devices that can store information and instructions, a disk storage, a flash, and the like.

[0128] The input device 230 may include a device for receiving data and information input by a user, such as a keyboard, a mouse, a camera, a scanner, a touch screen, etc.

[0129] Output device 240 may include devices that allow information to be output to a user, such as a display screen, printer, speaker, etc.

[0130] The communication interface 220 may include any transceiver or the like to communicate with other devices or communication networks, such as Ethernet, Radio Access Network (RAN), Wireless Local Area Network (WLAN), etc.

[0131] The processor 210 executes the program stored in the memory 200 and calls other devices, and can be used to implement each step of any microstrip line design method provided in the above embodiments of the present application.

[0132] In addition to the above methods and devices, embodiments of the present application may also be a computer program product, which includes computer program instructions, which, when executed by a processor, enable the processor to execute the steps in the microstrip line design method of various embodiments of the present application.

[0133] The computer program product may be written in any combination of one or more programming languages ​​to write program codes for performing the operations of the embodiments of the present application, including object-oriented programming languages, such as Java, C++, etc., and conventional procedural programming languages, such as "C" language or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as an independent software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0134] In addition, the embodiments of the present application may also be a storage medium on which a computer program is stored, and the computer program is executed by a processor to execute the steps in the microstrip line design method of various embodiments of the present application.

[0135] For the aforementioned method embodiments, for the sake of simplicity, they are all described as a series of action combinations, but those skilled in the art should be aware that the present application is not limited by the order of the actions described, because according to the present application, some steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present application.

[0136] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0137] The steps in the methods of each embodiment of the present application can be adjusted in order, combined and deleted according to actual needs, and the technical features recorded in each embodiment can be replaced or combined.

[0138] The modules and sub-modules in the devices and terminals in the various embodiments of the present application can be combined, divided and deleted according to actual needs.

[0139] In the several embodiments provided in the present application, it should be understood that the disclosed terminals, devices and methods can be implemented in other ways. For example, the terminal embodiments described above are only schematic, for example, the division of modules or submodules is only a logical function division, and there may be other division methods in actual implementation, for example, multiple submodules or modules can be combined or integrated into another module, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or modules, which can be electrical, mechanical or other forms.

[0140] The modules or submodules described as separate components may or may not be physically separated, and the components of the modules or submodules may or may not be physical modules or submodules, that is, they may be located in one place, or they may be distributed on multiple network modules or submodules. Some or all of the modules or submodules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0141] In addition, each functional module or submodule in each embodiment of the present application may be integrated into one processing module, or each module or submodule may exist physically separately, or two or more modules or submodules may be integrated into one module. The above-mentioned integrated modules or submodules may be implemented in the form of hardware or in the form of software functional modules or submodules.

[0142] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in the above description according to function. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0143] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be implemented directly by hardware, software units executed by a processor, or a combination of the two. The software units may be placed in a random access memory (RAM), a memory, a read-only memory (ROM), an electrically programmable ROM, an electrically erasable programmable ROM, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.

[0144] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0145] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for designing a microstrip line, characterized in that: include: Determining the dielectric constant of the microstrip line according to the substrate material of the microstrip line; Determine a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line; Performing a three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedances at different positions of the microstrip line; wherein the three-stage impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the middle segment other than the wide line segment and the narrow line segment; The width of the microstrip line at different positions is determined according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

2. The method according to claim 1, characterized in that The performing three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedance at different positions of the microstrip line includes: Performing Kloppenstein function transformation on the target source impedance and the target load impedance to determine the intermediate characteristic impedances at different positions of the intermediate segment; Performing a linear function transformation on the maximum value of the intermediate characteristic impedance and the target load impedance to determine the first characteristic impedance at different positions of the wide line segment; An exponential function transformation is performed on the minimum value of the intermediate characteristic impedance and the target source impedance to determine the second characteristic impedance at different positions of the narrow line segment.

3. The method according to claim 2, characterized in that The Kloppenstein function transformation is expressed by the following formula: Wherein, Z0(z) represents the intermediate characteristic impedance at different positions of the intermediate segment; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents a transcendental function; z represents different positions of the middle segment; l1 represents the length of the middle segment; U ( x ) Represents the unit transition function; C = cosh -1 [ln(Z L / Z S ) / Γ m ], where Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant.

4. The method according to claim 2, characterized in that: The linear function transformation is expressed by the following formula: Z0(z)=Z m +(Z L -WITH m / Z / l2; Wherein, Z0(z) represents the first characteristic impedance at different positions of the wide line segment; Z m represents the maximum value of the intermediate characteristic impedance; Z L represents the target load impedance; z represents the different positions of the middle segment; l2 represents the length of the wide line segment.

5. The method according to claim 2, characterized in that: The exponential function transformation is expressed by the following formula: Z0(z)=Z S and az ; Wherein, Z0(z) represents the second characteristic impedance at different positions of the narrow line segment; z represents different positions of the middle segment; Z S represents the target source impedance; a represents the transformation coefficient, and the size of a is related to the length of the narrow line segment.

6. The method according to claim 1, characterized in that Determining the width of the microstrip line at different positions according to the characteristic impedance and the dielectric constant at different positions of the microstrip line is achieved by the following formula: Wherein, W represents the width of the microstrip line; ε r represents the dielectric constant; h represents the thickness of the microstrip line; Z0 represents the characteristic impedance; 7. A microstrip line design device, characterized in that: include: A dielectric constant determining unit, used to determine the dielectric constant of the microstrip line according to the substrate material of the microstrip line; A target impedance determination unit, used to determine a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line; An impedance transformation unit is used to perform three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedance of different positions of the microstrip line; wherein the three-stage impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the middle segment other than the wide line segment and the narrow line segment; The width design unit is used to determine the width of the microstrip line at different positions according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

8. An electronic device, characterized in that: include: processor; a memory for storing instructions executable by the processor; The processor is used to execute the microstrip line design method according to any one of claims 1 to 6 by running instructions in the memory.

9. A computer storage medium, characterized in that The computer storage medium stores instructions, and when the instructions are executed, the microstrip line design method according to any one of claims 1 to 6 is executed.

Images