Method and apparatus for forming silicon nitride film

In the ALD method, the gas supply and plasma generation process are repeated with SiF4 and N2 gases and high-frequency power in an environment where the substrate temperature is below 200°C, and the problem of poor film formation of silicon nitride film under low temperature conditions in the prior art is solved, and the silicon nitride film formation with good coverage and stable film quality is achieved.

CN119685801APending Publication Date: 2025-03-25TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202411719350.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2020-11-18
Filing Date
2021-11-09
Publication Date
2025-03-25

AI Technical Summary

Technical Problem

The prior art is difficult to form a silicon nitride film with a good coverage range in an environment where the substrate temperature is 200°C or less, and there are problems with the film stability and coverage range of the film formed under low temperature conditions.

Method used

By using the ALD method, gas supply and exhaust gas are supplied without high-frequency power, and plasma is generated after high-frequency power is supplied. These processes are repeated to form a silicon nitride film to ensure that the substrate temperature is controlled below 200°C.

Benefits of technology

The film was successfully formed into a silicon nitride film with a good coverage range in an environment where the substrate temperature was below 200°C, which avoided the adverse effects of high temperature on the organic EL device, and improved the stability and coverage range of the film.

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Abstract

Provided are a method and an apparatus for forming a silicon nitride film. A method for forming a silicon nitride film on a substrate housed in a processing chamber, the method comprising: a step (a) in which a gas containing a silicon halide gas is supplied into the processing chamber without supplying high-frequency power; a step (b) in which, after the step (a), the supply of the gas containing the silicon halide gas is stopped, and the inside of the processing chamber is exhausted; a step (c), after the step (b), supplying a nitrogen-containing gas into the processing chamber; a step (d), after the steps (c), for generating plasma by supplying high-frequency power into the processing chamber; after the steps (e) and (d), stopping the supply of the nitrogen-containing gas and the supply of the high-frequency power, and exhausting the inside of the processing chamber; and repeating the steps of (a) to (e) for X times (X > = 1) until a silicon nitride film having a predetermined film thickness is formed, wherein the substrate temperature is controlled to 100 DEG C or less in the steps (a) to (e).
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