Point diffraction common-path interference wafer pattern defect detection device and method

By using point diffraction common light path interference technology and wide spectrum white light source in semiconductor chip wafer pattern detection, the problems of low measurement efficiency and insufficient resolution in the prior art are solved, and the detection effect of high resolution and high signal-to-noise ratio is achieved.

CN119688731AActive Publication Date: 2025-03-25XI AN JIAOTONG UNIV
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Patent Information

Application Number
CN202411860072.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-17
Publication Date
2025-03-25
Estimated Expiration
2044-12-17

AI Technical Summary

Technical Problem

The prior art has problems such as low measurement efficiency, large environmental factors and insufficient resolution in the detection of semiconductor chip wafer patterns, which is difficult to meet the detection needs of advanced processes.

Method used

Point diffraction common light path interference technology is used, non-short wavelength laser or wide spectrum white light source is used for detection, reflected light is sampled through grating, and signal processing is combined with 4f system and spatial filter to achieve high-resolution acquisition of wafer surface information.

Benefits of technology

It improves the detection resolution and signal-to-noise ratio, reduces the impact of environmental factors on the detection results, enhances the robustness and sensitivity of the detection, and meets the detection needs of advanced processes.

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Abstract

The invention discloses a point diffraction common-path interference wafer pattern defect detection device and method.The point diffraction common-path interference wafer pattern defect detection device comprises a light source incident light path, a signal collection light path, a signal filtering interference light path, a wafer displacement system and a refrigeration CCD camera, a to-be-detected wafer is precisely moved in the X direction, and an interference image at each position is obtained; performing phase reconstruction on each interference image to obtain a phase image related to the surface morphology of the wafer to be detected; moving average processing and second-order difference processing are carried out on the multiple continuous phase images, a large-range image is spliced, difference processing is carried out on the processed image and a reference standard image, and an image abnormal area is obtained; and performing contrast mapping on the image of the determined abnormal region and the actual wafer size to obtain an accurate defect region range of the wafer pattern. According to the invention, wafer pattern defect detection is carried out by using the phase information of the optical signal, the detection resolution and the signal-to-noise ratio are improved, and the detection scale is smaller.
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