Control method for output voltage of vehicle-mounted inverter

By sampling the voltage value output from the rectifier bridge in the vehicle inverter and comparing, if a short circuit or transient spike current is detected, and a 220V voltage is output after delay, the transient spike current impact problem of the inverter when connecting inductive or capacitive loads is solved, the MOS tube damage is avoided, and the output voltage conversion efficiency is improved.

CN119696345APending Publication Date: 2025-03-25AEROSPACE HI TECH HLDG GROUP
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Patent Information

Application Number
CN202411870039.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-18
Publication Date
2025-03-25

AI Technical Summary

Technical Problem

When the existing vehicle inverter is connected to inductive or capacitive load devices, transient spike current impact will occur, causing the inverter to enter the short-circuit protection module and cannot start normally. Although the existing methods can reduce the probability of MOS tube damage, the voltage output efficiency is low.

Method used

The voltage value output from the rectifier bridge is collected through the sampling module, and compared with the preset short circuit protection voltage value. If it is less than or equal to, it will output 0V. After delaying the preset time, it will output 220V voltage to avoid transient current spikes and prevent damage to the MOS tube.

Benefits of technology

It effectively avoids the MOS damage caused by inverter output short circuit and load transient spikes, and reduces the design margin of the MOS tube working current in the H-bridge circuit, thereby reducing the hardware design cost and improving the conversion efficiency of the output voltage.

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Abstract

The invention discloses a method for controlling the output voltage of a vehicle-mounted inverter, belongs to the field of inverter power supplies, and aims to solve the problem that the voltage output efficiency is low although the damage probability of MOS (Metal Oxide Semiconductor) transistors can be reduced. The method comprises the steps that 1, a sampling module collects a voltage value output by a rectifier bridge at the moment and compares the voltage value with a preset short-circuit protection voltage value in a comparison module, whether the voltage value is larger than the preset short-circuit protection voltage value or not is judged, if not, the second step is executed, and if yes, the third step is executed; 2, the comparison module outputs a high-level trigger signal to the single-chip microcomputer, the single-chip microcomputer drives the H-bridge circuit to output 220V voltage, and the step 1 is executed; 3, the comparison module outputs a low-level trigger signal to the single-chip microcomputer, the single-chip microcomputer drives the H-bridge circuit to output 220V voltage after the n time delay preset time, the initial value of n is 1, and the step 4 is executed; 4, judging whether n is equal to a preset value or not, if not, enabling n to be equal to n + 1, executing the step 1, and if yes, executing the step 5; and step 5, the single-chip microcomputer forbids to output the SPWM signal. The MOS is prevented from being damaged.
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