Formamidino perovskite self-rectification resistive random access memory device and preparation method and application thereof

By preparing FAPbI3 film in air solution method and combining cross-structure design, the problems of storage density and crosstalk current in the prior art are solved, and efficient self-rectification resistance-change storage effect and simplified process flow are achieved.

CN119697998APending Publication Date: 2025-03-25HUNAN FIRST NORMAL UNIV +1
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Patent Information

Application Number
CN202411962629.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-03-25

AI Technical Summary

Technical Problem

The existing resistive variable memory is difficult to shrink under limited structural unit size, resulting in limited integration density. At the same time, passive cross-arrays are prone to crosstalk current problems, increasing process complexity and power consumption.

Method used

A solution method is used to prepare a dense structure in air, and combined with the device design of a cross-shaped structure, the self-rectification resistance-change storage characteristics are achieved, the switching ratio reaches 104, the rectification ratio can reach 105, and the current crosstalk is suppressed.

Benefits of technology

It realizes the self-rectification resistance-change storage effect of high-density storage and repeatable read and write, simplifies the process flow, reduces process complexity and power consumption.

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Abstract

The invention discloses a formamidino perovskite self-rectification resistive random access memory device and a preparation method and application thereof, and relates to the technical field of semiconductor materials and functional devices. The resistive random access memory sequentially comprises a glass substrate, a bottom electrode, a formamidino perovskite layer and a top electrode from bottom to top. Wherein the perovskite thin film is prepared in the air by adopting a solution method. The self-rectification resistive random access memory is realized based on the formamidino perovskite material FAPbI3, the functional characteristics of the perovskite system resistive random access memory are enriched, and the material selection range of the self-rectification resistive random access memory is expanded. The preparation process adopted by the invention is simple, green and environment-friendly, high in operability and simple in device structure, the on-off ratio can reach 104, the rectification ratio can reach 105, and excellent self-rectification resistive random access memory performance is shown.
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