Semiconductor slurry suitable for low-temperature sintering and manufacturing method thereof

By preparing a semiconductor slurry containing specific paste and metal particles, the problems of substrate deformation, poor bonding degree and high residue caused by high-temperature sintering in traditional packaging processing are solved, and the effects of low-temperature sintering, short time, few residues and high reliability are achieved.

CN119703056APending Publication Date: 2025-03-28KUNSHAN NOVEL ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202411876771.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-19
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

The materials used in traditional packaging processing can easily lead to deformation of the packaging substrate, poor wire bonding degree, and a lot of residue after sintering of the slurry paste, which affects the service life and reliability of the semiconductor chip after packaging.

Method used

A semiconductor slurry suitable for low temperature sintering is used, which includes a paste portion and uniformly dispersed metal particles. The paste part consists of propylene glycol methyl ether, isopropyl toluene, rosin amine polyoxyethylene ether, diaberobic acid glyceryl ether and turpentine oil. The metal particles are composed of bismuth powder, indium powder and tin silver copper alloy powder, and are made by specific formulation and processing methods.

Benefits of technology

Low-temperature sintering is achieved, with short sintering time and few paste residues after sintering. It has excellent surface corrosion resistance, conductivity and bonding strength, which improves the reliability and service life of semiconductor products after packaging.

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Abstract

The invention discloses a semiconductor paste suitable for low temperature sintering and a manufacturing method thereof, and the semiconductor paste comprises a paste body part and metal particles dispersed in the paste body part. The paste body part contains 15%-25% of propylene glycol monomethyl ether, 4%-9% of isopropyl toluene, 3%-7% of rosin amine polyoxyethylene ether, 3%-5% of glycerol diabietate, 1%-4% of glycerol diabietate ether and 1%-3% of grease turpentine, and the metal particles contain 25%-30% of bismuth powder, 3%-6% of indium powder and the balance tin-silver-copper alloy powder. During preparation, the paste part is prepared through hot melting stirring and emulsification, and the metal particles are prepared through granulation processing; and uniformly mixing the paste part with the metal particles through vacuum stirring to obtain the semiconductor paste which is low in sintering temperature, short in sintering time, few in paste residue after sintering, and excellent in surface corrosion resistance, conductivity and bonding strength.
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