Preparation method of polishing slurry composition

By preparing a polishing slurry composition containing a specific component ratio, the butterfly defect problem caused by the high polishing rate of cerium oxide during the CMP process is solved, and the effect of efficient polishing and reducing defect occurrence is achieved.

CN119709018APending Publication Date: 2025-03-28SHANGHAI HUIYAN ELECTRONIC MATERIALS CO LTD +1
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Patent Information

Application Number
CN202311275712.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-09-28
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

During the chemical mechanical polishing (CMP), the high polishing rate of cerium oxide can easily lead to butterfly defects on the wafer surface, reducing product yields, and reducing polishing efficiency will increase production costs.

Method used

By preparing a polishing slurry composition, it includes water, cerium oxide, inhibitor, additive, pH adjuster and anionic surfactant, the specific mass fraction is 0.1%-10% cerium oxide, 0.1-5% inhibitor, 0.01-5% additive, 0.01-2% pH adjuster and 50-500 ppm anionic surfactant, and the sum of the mass fractions of each component is 100%.

Benefits of technology

The polishing slurry composition can maintain a high polishing rate, increase the selectivity ratio of silicon oxide to silicon nitride, and reduce the occurrence of depression and erosion.

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Abstract

The invention relates to a preparation method of a polishing slurry composition. The preparation method comprises the following steps that raw materials of the polishing slurry composition are mixed, and the raw materials comprise the following components in percentage by mass: water, 0.1%-10% of cerium oxide, 0.1%-5% of an inhibitor, 0.01%-5% of an additive, 0.01%-2% of a pH regulator and 50-500 ppm of an anionic surfactant. The mass fraction of each component is the mass fraction of the component in the polishing slurry composition; the sum of the mass fractions of the components is 100%. The additive is a compound as shown in a formula I which is described in the specification. The polishing slurry composition prepared by the preparation method provided by the invention can reduce the occurrence of depression and erosion. # imgabs0 #
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