Semiconductor structure and semiconductor process method

By inserting sharp objects into the pre-bonded bonding interface in the semiconductor process to remove bubbles and performing annealing and reinforcement bonding, the problem of bubbles in the bonding interface of the heterogeneous first substrate is solved, the bonding rate and bonding strength are improved, the process is simple and the energy consumption is low.

CN119725100AActive Publication Date: 2025-03-28SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202311251139.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-09-26
Publication Date
2025-03-28
Estimated Expiration
2043-09-26

AI Technical Summary

Technical Problem

In the prior art, there is a problem of bubbles in the bonding interface of the heterogeneous first substrate, which leads to a decrease in bonding rate and affects the performance and application of the device.

Method used

The first substrate and the second substrate are pre-bonded, pre-annealed, and sharp objects are inserted at the bonding interface to remove the bubbles, and then bond again, and finally annealing reinforcement bonding is performed.

Benefits of technology

Without affecting the performance of the semiconductor structure, the bubbles at the bonding interface are successfully removed, and the bonding rate of the heterogeneous bonding structure is improved. The process equipment is simple and easy to operate, the bonding strength is not affected, and energy consumption is reduced.

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Abstract

The invention provides a semiconductor structure and a semiconductor process method, and the method comprises the steps: carrying out the pre-bonding of a first substrate and a second substrate of a heterogeneous silicon substrate, and obtaining a bonding structure; carrying out pre-annealing on the obtained bonding structure; inserting a sharp object into a bonding interface between the first substrate and the second substrate, and opening the bonding interface to remove bubbles on the bonding interface; drawing out the sharp object, and bonding the bonding interface again; and carrying out annealing on the bonding structure after the bubbles are removed so as to reinforce the bonding. According to the method, the sharp object is inserted into the pre-bonded bonding interface to remove the bubbles on the bonding interface between the heterogeneous silicon substrates, the bubble-free bonding interface is obtained on the premise of not influencing the performance of the semiconductor structure, the bonding rate of the heterogeneous bonding structure is improved, process equipment is simple and easy to operate, other processes are not influenced, and the bonding strength is not influenced; in addition, by means of repeated pre-annealing and temperature increasing, energy consumption is reduced while bubbles are completely exhausted.
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