Self-aligned assisted assembly on structural wafer for hybrid bonding die stacks
By implementing hydrophobicity suppression features on the back of the chiplet and on the structural substrate, high-precision 3D die stack assembly is achieved, solving the problems of poor bonding and liquid reaction in the prior art, and improving the assembly efficiency and stability.
CN119725113APending Publication Date: 2025-03-28INTEL CORP
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Patent Information
- Application Number
- CN202411190336.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-28
- Filing Date
- 2024-08-28
- Publication Date
- 2025-03-28
AI Technical Summary
Technical Problem
In the prior art, when forming a 3D die stack, it is difficult to achieve high precision and efficient bonding, especially in the small size range, where liquid reaction and process compatibility problems exist.
Method used
Hydrophobic arrest features are implemented on the back of the chiplet and on the structural substrate, providing fine alignment through droplet distribution and capillary force, achieving high-precision bonding, and performing mixed bonding on passive surfaces to avoid liquid reactions.
Benefits of technology
It realizes high-precision and efficient 3D die stack assembly, solves the problems of liquid reaction and process compatibility, and improves the accuracy and stability of bonding.
✦ Generated by Eureka AI based on patent content.
Abstract
Hybrid bonded die stacks, related devices, systems, and fabrication methods are disclosed. The backside surface of the integrated circuit (IC) die and the surface of the structural substrate each include a bonding region surrounded by a hydrophobic structure. The droplets are applied to the die or structural substrate bonding region, and the die is disposed on the bonding region of the structural substrate. The capillary force self-aligns the die to the bonding region and forms the bond by evaporating the liquid and then annealing. Thereafter, a hybrid bond is formed between the opposite active surface of the die and the base substrate using wafer-to-wafer bonding. An IC structure including the IC die and portions of the structural substrate and the base substrate is singulated from the bonded wafer and assembled.
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