Semiconductor processing equipment and processing method of semiconductor workpiece
By designing uniform pressure chambers and gas guide holes with different guides in the side air intakes of semiconductor process equipment, the problem of uneven gas flow field is solved, and a more stable gas flow field and better workpiece processing effect is achieved.
CN119725172APending Publication Date: 2025-03-28BEIJING E TOWN SEMICON TECH CO LTD
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Patent Information
- Application Number
- CN202411932238.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2025-03-28
AI Technical Summary
Technical Problem
In the wafer processing process, the flow field of the gas in the treatment equipment is uneven, which affects the processing results of the workpiece.
Method used
A side air intake member of a semiconductor process equipment is designed, including a uniform pressure chamber, an air intake portion and a gas guide portion. The gas guide portion has a plurality of gas guide holes of different directions. The uniform pressure chamber communicates the air intake portion with the gas guide hole to make the gas diffuse evenly to the reaction chamber.
Benefits of technology
Through this design, a stable gas flow field in the reaction chamber is formed, which improves the processing effect of the workpiece.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides semiconductor process equipment and a processing method of a semiconductor workpiece. The semiconductor process equipment comprises a reaction cavity, wherein the reaction cavity comprises an air inlet side and an air outlet side which are oppositely arranged in the longitudinal direction; the lateral air inlet piece is arranged on the air inlet side; the lateral air inlet piece comprises a pressure equalizing cavity, an air inlet part and an air guide part; a pressure equalizing cavity is defined by the inner space of the side air inlet piece. The gas guide part is provided with a plurality of gas guide holes with different guides, and at least two gas guide holes are distributed at intervals in the transverse direction; the gas inlet part is communicated with the at least two gas guide holes through the uniform pressure cavity, so that gas entering from the gas inlet part passes through the uniform pressure cavity and is guided into the reaction cavity through the at least two gas guide holes in different directions, and the gas is discharged out of the reaction cavity from the exhaust side. By arranging the plurality of gas guide holes with different guides, the gas can be uniformly diffused into the reaction cavity, so that a stable gas flow field is favorably formed in the reaction cavity, and the treatment effect of a workpiece is improved.
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