Low-inductance high-reliability silicon carbide power module and manufacturing process thereof

By adopting the design of an aluminum-based silicon carbide base plate and a silicon nitride insulating substrate, combined with aluminum bonding wire and nanosilver welding technology, the silicon carbide MOSFET chipset and SBD chipset are compactly installed, which solves the problem of high parasitic inductance and poor heat dissipation performance of the silicon carbide power module, and realizes a silicon carbide power module with low inductance and high heat dissipation capabilities.

CN119725341APending Publication Date: 2025-03-28NANJING TEBAIRUI ELECTRONIC TECH CO LTD
0 Cites 0 Cited by

Patent Information

Application Number
CN202410589364.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-05-13
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

The existing silicon carbide power modules have problems with high parasitic inductance and poor heat dissipation performance, which leads to severe voltage overshoot and oscillation during high-speed switching, and the radiator is large in size, limiting the module's high-frequency application capabilities.

Method used

The aluminum-based silicon carbide base plate and silicon nitride insulating substrate design are designed, combined with aluminum bonding wire and nanosilver welding technology, optimize the heat dissipation path of the module, and reduce parasitic inductance by compactly installing the silicon carbide MOSFET chipset and SBD chipset.

Benefits of technology

It realizes low inductance and high heat dissipation capabilities, reduces the junction-shell thermal resistance of the module, optimizes the temperature distribution of the chip, enhances the overall heat dissipation capabilities, and is suitable for large-scale market applications.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The invention discloses a low-inductance and high-reliability silicon carbide power module and a manufacturing process thereof, and relates to the technical field of semiconductor power device packaging, the low-inductance and high-reliability silicon carbide power module comprises a bottom plate, the upper surface of the bottom plate is fixedly connected with an insulating substrate, the upper surface of the insulating substrate is fixedly connected with a silicon carbide MOSFET chip set, and the silicon carbide MOSFET chip set is fixedly connected with a silicon carbide capacitor. The upper surface of the insulation substrate is fixedly connected with an SBD chip set, the upper surface of the silicon carbide MOSFET chip set and the upper surface of the SBD chip set are fixedly connected with aluminum bonding wires, the upper surface of the bottom plate is fixedly provided with a PCB through screws, the silicon carbide MOSFET chip set is electrically connected with the insulation substrate and the PCB through the aluminum bonding wires, and the silicon carbide MOSFET chip set is electrically connected with the insulation substrate and the PCB through the aluminum bonding wires. The silicon carbide MOSFET chip set and the SBD chip set are connected in parallel, the SBD chip set is electrically connected with the insulation substrate through an aluminum bonding wire, the insulation substrate, the silicon carbide MOSFET chip set and the SBD chip set are compactly installed, the consistency of parasitic parameters of the silicon carbide MOSFET chip set and the SBD chip set which are connected in parallel is improved, power is reduced, and parasitic inductance and loop resistance of a control loop are controlled.
Need to check novelty before this filing date? Find Prior Art