Adjustable universal MOSFET gate driving circuit and driving method

By proposing a controllable universal MOSFET gate driving circuit in the power MOSFET drive circuit, the gate voltage and current waveform of the power MOSFET is finely regulated, which solves the problem of difficulty in achieving low loss and low electromagnetic interference in the prior art, and achieves the effect of high power density and low loss.

CN119727690AActive Publication Date: 2025-03-28HARBIN INST OF TECH
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Patent Information

Application Number
CN202411791409.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-06
Publication Date
2025-03-28
Estimated Expiration
2044-12-06

AI Technical Summary

Technical Problem

The existing power MOSFET drive circuits are difficult to achieve low electromagnetic interference, low turn-on loss, low voltage overshoot and low turn-off loss during the on-off process, and it is difficult to meet the high power density requirements of modern power electronic devices.

Method used

A gate driving circuit for adjustable universal MOSFET is proposed. By finely controlling the gate voltage and current waveform of the power MOSFET, the drain-source side voltage and current trajectory are controlled, the circuit insulation requirements are reduced, and the power density is improved.

Benefits of technology

It realizes low electromagnetic interference and low turn-on loss during the power MOSFET, low voltage overshoot and low turn-off loss during the power MOSFET, meeting the demand for high power density.

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Abstract

The invention discloses an adjustable universal MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) gate driving circuit and a driving method, and relates to the field of power electronics. The device comprises a logic control module, a parameter adjusting module, a turn-on module, a turn-off module, an external parameter module and an external grid resistor, and performs grid-source voltage waveform slope control in the turn-on and turn-off processes through the modules by utilizing the transconductance capacitance change characteristic of a power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). Fine regulation and control of drain-source current and drain-source voltage in the switching-on process and independent fine regulation and control of drain-source current and drain-source voltage in the switching-off process are respectively realized, so that the framework realizes fine regulation and control of electromagnetic interference and switching-on loss in the switching-on process of the power MOSFET and fine regulation and control of voltage overshoot and switching-off loss in the switching-off process; the problems that a drive circuit of a current power MOSFET is difficult to meet the goals of low electromagnetic interference and low turn-on loss in the turn-on process and low voltage overshoot and low turn-off loss in the turn-off process, and is difficult to meet the high power density requirement of a modern power electronic device are solved.
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