Gate-adjustable high-response photoelectric homojunction field effect device, manufacturing method thereof and photoelectric response control method

By introducing a gate adjustable design in the photoelectric homojunction field effect device, adjusting the homojunction state of the channel layer, the problem of low photoresponsiveness in the prior art is solved, and high sensitivity photoelectric response and flexible photoresponse regulation are achieved.

CN119730419AActive Publication Date: 2025-03-28NANJING UNIV OF SCI & TECH
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Patent Information

Application Number
CN202411796791.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-09
Publication Date
2025-03-28
Estimated Expiration
2044-12-09

AI Technical Summary

Technical Problem

The existing electrically adjustable homojunction optoelectronic devices based on two-dimensional materials have low light responsiveness, which is difficult to meet the application requirements of high-sensitivity object detection in the field of intelligent vision.

Method used

A high-responsive photoelectric homojunction field effect device with adjustable gate is designed. By setting a metal gate layer, an insulating layer and a channel layer on the substrate, and adjusting the voltage of the metal gate layer, the channel layer is adjusted to an n-p or n-n homojunction state, thereby improving the photoelectric response.

Benefits of technology

A high-sensitivity photoelectric response is achieved, with a maximum photoresponse of about 1.0A/W, which significantly improves the detection ability of the target, and regulates the photoresponse through gate voltage to adapt to the photoelectric detection needs of different environments.

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Abstract

The invention discloses a gate-adjustable high-response photoelectric homojunction field effect device, a manufacturing method thereof and a photoelectric response control method. The device comprises a substrate, a metal gate layer and an insulating layer are arranged on the surface of the substrate, the insulating layer partially covers the metal gate layer, a channel layer is arranged on the surface of the insulating layer, and a source electrode and a drain electrode are arranged on the surface of the channel layer at intervals; the channel layer is made of a material with bipolar field effect characteristics; the channel layer is adjusted to be in an n-p or n-n homojunction state by adjusting the voltage of the metal gate layer. The preparation method comprises the following steps: evaporating a metal gate layer on a substrate; arranging an insulating layer on the metal gate layer and the substrate through a polyvinyl alcohol dry transfer method; arranging a channel layer on the surface of the insulating layer through a polyvinyl alcohol dry transfer method; and evaporating a source electrode and a drain electrode on the channel layer. According to the device obtained by the invention, a reconfigurable n-p or n-n homojunction state is realized, the maximum light responsivity is 1.0 A / W, and high-sensitivity detection can be realized.
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