Light emitting diode and light emitting device

By optimizing the P/N electrode structure and distribution of LEDs, adopting P/N separation design and avoiding overlap of the first connecting electrode and the second pad electrode, the problem of leakage risk in the existing LED structure during packaging is solved, and the yield and service life of the product are improved.

CN119730494APending Publication Date: 2025-03-28XIAMEN SANAN OPTOELECTRONICS CO LTD
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Patent Information

Application Number
CN202411780361.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-05
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

The existing LED structures have a risk of leakage during packaging, which affects product life and yield, especially in the hot press welding crystal solidification process.

Method used

By optimizing the structure and distribution of P/N electrodes, adopting a P/N separation design, and ensuring that there is no first connecting electrode on the edges and inner surrounding areas of the second pad electrode, avoiding leakage problems caused by the protrusion of the substrate material or the rupture of the insulating layer.

Benefits of technology

It effectively avoids the insulating layer rupture caused by the protrusion or hot pressing of the substrate material, reduces the risk of leakage, improves the yield and service life of the product, and is suitable for hot press welding crystal solidification process.

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Abstract

The invention provides a light-emitting diode which comprises a substrate, a semiconductor laminated layer formed on the substrate, a first connecting electrode and a second connecting electrode, wherein the first connecting electrode and the second connecting electrode are electrically connected with a first semiconductor layer and a second semiconductor layer respectively. The first bonding pad electrode and the second bonding pad electrode are formed on the first semiconductor layer and the second semiconductor layer and are electrically connected with the first semiconductor layer and the second semiconductor layer respectively, and the projection of the second bonding pad electrode in the second direction and the projection of the first connecting electrode in the second direction have no overlapping area. According to the light-emitting diode provided by the invention, no first connecting electrode exists at the edge of the second bonding pad electrode and in the internal surrounding area, and the lower part of the P-polarity substrate is of a P-polarity chip structure, so that the situation of electric leakage of a lamp bead caused by cracking of an insulating layer due to bulge of a substrate material or hot pressing in the packaging process is avoided; the method is suitable for a thermocompression bonding die bonding process, and product quality is guaranteed.
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