Preparation method of 248nm photoresist resin containing tertiary amine

By introducing tertiary amine group monomers in the photoresist resin synthesis process, a 248nm photoresist resin containing tertiary amine is formed, the problems of high metal impurities content and photoacid diffusion in the photoresist are solved, and the etching accuracy and the stability of the resin are improved.

CN119751731APending Publication Date: 2025-04-04JIANGSU JICUI POLYMER NEW MATERIALS CO LTD
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Patent Information

Application Number
CN202411969346.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

The existing photoresist has a high content of metal impurities, and the photo-produced acid diffuses after light decomposition, resulting in a decrease in etching accuracy, making it difficult to meet the requirements of high-precision integrated circuits.

Method used

During the resin synthesis process, the tertiary amine group monomer is introduced as a styrene derivative, and a synthetic resin solution is obtained through free radical polymerization, and multiple steps of impurity removal and solvent replacement are carried out to form a 248nm photoresist resin containing tertiary amine.

Benefits of technology

The diffusion of photoacids is inhibited, the performance of the photoresist is improved, the etching accuracy is improved, and the tertiary amine groups are synthesized on the resin and will not evaporate, maintaining the basic structure and performance of the resin.

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Abstract

The invention discloses a preparation method of 248nm photoresist resin containing tertiary amine, which comprises the following steps: resin is synthesized to obtain a synthetic resin solution, and monomers synthesized during synthesis comprise the following raw materials in molar percentage: 50-99.99% of 4-acetoxystyrene, 0-49.99% of styrene and 0.01-0.1% of tertiary amine derivative of styrene; removing impurities and unreacted monomers in the synthetic resin solution to obtain a No.1 resin solution; hydrolyzing the first resin solution to obtain a second resin solution; removing metal impurities in the second resin solution to obtain a third resin solution; and replacing the solvent in the No.3 resin solution with an electronic-grade solvent to obtain a finished product. The tertiary amine group monomer introduced in the resin synthesis process is a styrene derivative, the basic structure, the etching resistance, the light transmission and the like of the resin cannot be affected, and due to the fact that the tertiary amine group is synthesized on the resin, the tertiary amine group cannot volatilize in the later use process.
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