Method for preparing gallium nitride nanowire array by flux method

The Ga-Na liquid phase system and alloy catalytic material are used by the flux method to grow the gallium nitride nanowire array under high pressure nitrogen gas, solving the problems of high preparation costs, long cycles and catalyst residues in the prior art, and achieving low-cost and high-efficiency nanowire preparation and self-cleaning growth effects.

CN119753808APending Publication Date: 2025-04-04SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
1 Cites 2 Cited by

Patent Information

Application Number
CN202510021472.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-03
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

The existing gallium nitride nanowire preparation methods have problems such as high production cost, long cycle, and difficult to remove harmful gases and catalyst residues.

Method used

By using the flux method, by providing an alloy catalytic material containing gallium and transition metal elements with catalytic properties and a liquid phase system of Ga-Na liquid alloy, sodium metal dissociates nitrogen under a high-pressure nitrogen atmosphere, and under the catalytic action of the alloy catalytic material, a gallium nitride nanowire array is grown on a gallium nitride single crystal substrate.

Benefits of technology

The gallium nitride nanowire array is prepared at a low cost and high efficiency, avoiding the use of harmful ammonia, and the growth system has a self-cleaning effect, making the nanowire surface cleaner.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The invention discloses a method for preparing a gallium nitride nanowire array by a flux method. The method comprises the following steps: providing a liquid phase system of an alloy catalytic material containing Ga and a transition metal element with a catalytic property, and a Ga-Na liquid phase alloy; under the condition of isolating water and oxygen, enabling the liquid phase system to be in contact with the gallium nitride single crystal substrate, under the atmosphere of high-pressure nitrogen, enabling the metal sodium to dissociate nitrogen at high temperature, and realizing c-direction growth of the gallium nitride nanowire array on the gallium nitride single crystal substrate under the catalytic action of the alloy catalytic material. The preparation of the raw materials only needs to be completed at one time, the substrate does not need to be specially treated, only gallium, sodium, nickel and nitrogen are used as the raw materials, and the cost is low; compared with a traditional sodium fluxing agent method for growing gallium nitride single crystals, the method has the advantages that a sodium-gallium-transition metal melt liquid-phase system with the catalytic property of the sodium fluxing agent is utilized, and the high-density gallium nitride nanowire is innovatively prepared.
Need to check novelty before this filing date? Find Prior Art