Preparation method of low-temperature high-thermal-conductivity nano-silver adhesive
By preparing low-temperature high-thermal nanosilver adhesives, the problem of insufficient thermal conductivity and bonding strength of existing packaging materials under high temperature or high irradiation conditions is solved, and the combination of high thermal conductivity and high bonding strength is achieved, which is suitable for semiconductor packaging in high temperature service.
Patent Information
- Application Number
- CN202510088288.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-20
- Publication Date
- 2025-04-11
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
Existing semiconductor packaging materials are difficult to meet the requirements of high thermal conductivity, low thermal resistance and high bonding strength under high temperature or high irradiation conditions, and their performance is unstable under mechanical vibration and thermal mechanical stress.
Using the preparation method of low-temperature and high-thermal conductivity nanosilver adhesive, nanosilver particles with high thermal conductivity and bond strength are prepared by mixing high-purity silver powder with dispersant and solvent to form nanosilver particles of 20nm-150nm. Combined with high-speed stirring or ultrasonic dispersion technology, nanosilver adhesives with high thermal conductivity and bond strength are prepared.
It realizes the combination of high thermal conductivity and high bonding strength under low temperature conditions, and is suitable for semiconductor packaging in high temperature service, improving the durability and performance stability of packaging materials.