Crystal line adjusting method and device, electronic equipment and computer readable storage medium

Abstract

The application relates to a crystal line adjusting method and device, electronic equipment and a computer readable storage medium, and belongs to the computer field. The crystal line adjusting method comprises the following steps: determining the convexity of all local maximum points in the silicon rod circumferential scanning data according to the obtained silicon rod circumferential scanning data, wherein the silicon rod circumferential scanning data comprises a plurality of data points collected along the outer peripheral contour of the silicon rod; combining N local maximum points to obtain at least one maximum point group, wherein the N local maximum points are local maximum points with the convexity in the front in the order of the convexity of all the local maximum points, and N is an integer greater than or equal to 4; when the angle values of the maximum points in the at least one maximum point group do not all satisfy the first crystal line error condition, screening a target maximum point group with the angle value of the maximum point satisfying the second crystal line error condition from the at least one maximum point group; and determining the target crystal line of the silicon rod according to the adjustment angle value of each maximum point in the target maximum point group.

Description

Technical Field

[0001] This application belongs to the field of computers, and specifically relates to a crystal wire adjustment method, apparatus, electronic device, and computer-readable storage medium. Background Technology

[0002] When processing silicon rods using existing wire EDM machines, manual drawing of auxiliary lines on the end face of the silicon rod is required for manual confirmation of the crystal lines, ensuring that the processed crystal lines are not cut off. Currently, before loading the silicon rod, manual drawing of auxiliary lines is necessary, followed by reference and calibration against the worktable based on these lines. This process involves multiple steps, including manually rotating the single crystal, drawing auxiliary lines, and manual confirmation and adjustment, which is quite cumbersome. Furthermore, if the crystal lines on the silicon rod do not meet the crystal line error requirements, manual adjustment is required. However, manual adjustment cannot guarantee accuracy and is inefficient. Summary of the Invention

[0003] Therefore, the purpose of this application is to provide a crystal wire adjustment method, apparatus, electronic device, and computer-readable storage medium to improve the problems that manual crystal wire adjustment cannot ensure the accuracy of crystal wire adjustment and has low adjustment efficiency.

[0004] The embodiments of this application are implemented as follows:

[0005] In a first aspect, embodiments of this application provide a crystalline adjustment method, comprising: determining the convexity of all local maxima points in the circumferential scanning data of the silicon rod based on acquired circumferential scanning data of the silicon rod, wherein the circumferential scanning data of the silicon rod includes multiple data points collected along the outer circumferential contour of the silicon rod; combining N local maxima points to obtain at least one group of maxima points, wherein the N local maxima points are the local maxima points with the highest convexity among all local maxima points, and N is an integer greater than or equal to 4; when the angle values ​​of the maxima points in the at least one group of maxima points do not satisfy a first crystalline error condition, selecting a target group of maxima points from the at least one group of maxima points whose angle values ​​satisfy a second crystalline error condition; and determining the target crystalline of the silicon rod based on the adjustment angle value of each maxima point in the target group of maxima points.

[0006] In this embodiment, since the M crystal lines (M protruding lines on the silicon rod) on the silicon rod protrude more than other places, if a group of maxima that satisfies the first crystal line error condition cannot be selected from at least one group of maxima that is composed of the first N local maxima, a target group of maxima whose angle values ​​satisfy the second crystal line error condition is selected. The target crystal line of the silicon rod can then be determined based on the adjustment angle value of each maxima in the target group of maxima. This allows for the rapid and accurate detection of the actual angular position of the crystal line on the silicon rod. Furthermore, if the actual crystal line cannot satisfy the first crystal line error condition, the angle value corresponding to each maxima in the target group of maxima can be automatically adjusted. Thus, the target crystal line of the silicon rod can be determined based on the adjustment angle value of each maxima in the target group of maxima. This solves the problem that manual crystal line adjustment cannot ensure the accuracy of crystal line adjustment and has low efficiency.

[0007] In one possible implementation of the first aspect embodiment, determining the convexity of all local maxima points in the acquired circumferential scanning data of the silicon rod, based on the acquired circumferential scanning data of the silicon rod, includes: determining the left interval and right interval of each local maxima point based on the circumferential scanning data of the silicon rod; obtaining the left minimum point in the left interval and the right minimum point in the right interval of each local maxima point based on the circumferential scanning data of the silicon rod; and obtaining the convexity of each local maxima point based on the left minimum point and the right minimum point.

[0008] In this embodiment of the application, the convexity of each local maximum point is determined by identifying the left minimum point in the left interval and the right minimum point in the right interval. This allows for a quick and accurate determination of the convexity of each local maximum point.

[0009] In one possible implementation of the first aspect embodiment, determining the left and right intervals of each local maximum point based on the circumferential scanning data of the silicon rod includes: for each local maximum point, obtaining the left and right intervals of the local maximum point according to the horizontal extension line of the local maximum point and the scanning curve corresponding to the circumferential scanning data of the silicon rod.

[0010] In this embodiment, based on the horizontal extension line of the local maximum point and the scanning curve corresponding to the circumferential scanning data of the silicon rod, the left and right intervals of the local maximum point can be quickly obtained to provide support for accurately determining the left minimum point of each local maximum point in the left interval and the right minimum point in the right interval.

[0011] In one possible implementation of the first aspect embodiment, the convexity of each local maximum point is obtained based on the left and right minimum points of each local maximum point, including: for each local maximum point, obtaining the larger value point from the left and right minimum points of the local maximum point as a target comparison point, obtaining the absolute height difference between the local maximum point and the target comparison point, and obtaining the convexity of the local maximum point based on the absolute height difference.

[0012] In this embodiment, for each local maximum point, the larger value point is obtained from the minimum point in the left and right regions of the local maximum point as the target comparison point. Then, the absolute height difference between the local maximum point and the target comparison point is obtained, and the convexity of the local maximum point is obtained based on the absolute height difference, which improves the guarantee for accurate detection of silicon rod crystal wires in the subsequent process. Furthermore, obtaining the larger value point from the minimum point in the left and right regions of the local maximum point as the target comparison point can reduce accumulated errors and improve accuracy.

[0013] In one possible implementation of the first aspect embodiment, before determining the convexity of all local maxima points in the acquired circumferential scanning data of the silicon rod based on the acquired circumferential scanning data of the silicon rod, the method further includes: acquiring all data point groups in the circumferential scanning data of the silicon rod, each data point group containing M consecutive data points, where M is an integer not less than 3; traversing each data point group and filtering out the point with the largest median value in each data point group, wherein the point with the largest median value in each data point group is a local maximum point; and acquiring all local maximum points in the circumferential scanning data of the silicon rod based on the point with the largest median value in each data point group.

[0014] In this embodiment, the circumferential scanning data of the silicon rod is divided into multiple data point groups (each data point group contains three or more consecutive data points) to select all data points that satisfy the definition of a local maximum (the point with the largest median value in each data point group is a local maximum). This allows for the rapid acquisition of all local maximum points in the circumferential scanning data of the silicon rod, and ensures that each local maximum point has points with smaller values ​​to its left and right, so as to determine the minimum value of the left and right intervals of each local maximum point.

[0015] In a possible implementation of the first aspect embodiment, before the angle values ​​of the maxima in the at least one set of maxima do not satisfy the first crystal line error condition, the method further includes: for each set of maxima in the at least one set of maxima, obtaining four angle values ​​corresponding to four local maxima in the set of maxima, determining whether each adjacent difference in the four angle values ​​of the set of maxima is within a first set difference, and obtaining a first determination result, wherein the adjacent difference is the difference between two adjacent angles in the four angle values ​​of the set of maxima; and determining whether each interval difference in the four angle values ​​of the set of maxima is within a second set difference, and obtaining a second determination result, wherein the interval difference is the difference between two angle values ​​in the four angle values ​​of the set of maxima that are spaced one angle apart; and determining whether the angle values ​​of the maxima in the set of maxima satisfy the first crystal line error condition based on the first determination result and the second determination result of the set of maxima.

[0016] In this embodiment of the application, by obtaining the four angle values ​​corresponding to the four local maxima in the maxima group, and then determining whether each adjacent difference in the four angle values ​​of the maxima group is within a first set difference, a first determination result is obtained; and by determining whether each interval difference in the four angle values ​​of the maxima group is within a second set difference, a second determination result is obtained. In this way, it is possible to quickly and accurately determine whether the angle values ​​of the maxima in the maxima group satisfy the first crystal line error condition.

[0017] In one possible implementation of the first aspect embodiment, the range of the first set difference is 86°-94°, and the range of the second set difference is 176°-184°.

[0018] In this embodiment, since the four crystal lines of the silicon rod are distributed at different positions on the silicon rod, and have a relationship similar to 90°, 180°, 270°, and 360°, the crystal line error requirement is determined based on the above-mentioned set difference, so as to quickly and accurately determine whether the angle value of the maximum point in the maximum point group meets the first crystal line error condition.

[0019] In one possible implementation of the first aspect embodiment, selecting a target set of maxima from the at least one set of maxima to satisfy the second crystal line error condition includes: for each set of maxima, obtaining four angle values ​​corresponding to four local maxima in the set of maxima, determining whether the four angle values ​​of the set of maxima satisfy the crystal line error condition, and obtaining a third determination result; and determining whether the angle values ​​of the maxima in the set of maxima satisfy the second crystal line error condition based on the third determination result of the set of maxima.

[0020] In this embodiment of the application, by judging whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition, it is possible to quickly determine whether the angle value of the maximum point in the maximum point group satisfies the second crystal line error condition.

[0021] In one possible implementation of the first aspect embodiment, determining whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition includes: determining whether the difference between any two adjacent angle values ​​in three of the four angle values ​​of the maximum point group is within a third preset difference value, and obtaining a first judgment sub-result of the maximum point group; determining whether there are two interval differences in the four angle values ​​of the maximum point group that are within a fourth preset difference value, and obtaining a second judgment sub-result of the maximum point group, wherein the interval difference is the difference between two angle values ​​that are one angle value apart in the four angle values ​​of the maximum point group; and determining whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition based on the first and second judgment sub-results of the maximum point group.

[0022] In this embodiment of the application, by determining whether the difference between any two adjacent angle values ​​in three of the four angle values ​​of the maximum point group is within a third set difference value, and by determining whether there are two interval differences in the four angle values ​​of the maximum point group that are within a fourth set difference value, it is possible to quickly determine whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition.

[0023] In one possible implementation of the first aspect embodiment, determining the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group includes: if the difference between any two adjacent angle values ​​in the three angle values ​​of the target maximum point group is within the third set difference value, then adjusting the remaining angle values ​​in the target maximum point group to obtain an adjusted remaining angle value, wherein the remaining angle value is an angle value in the target maximum point group other than the three angle values ​​that satisfy the crystal line difference condition; and determining the target crystal line based on the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition and the adjusted remaining angle value.

[0024] In this embodiment of the application, if the difference between any two adjacent angle values ​​in the three angle values ​​of the target maximum point group is within the third set difference, and when adjusting the angle, only the remaining angle values ​​can be adjusted, thus improving the adjustment efficiency.

[0025] In one possible implementation of the first aspect embodiment, determining the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group includes: if two of the four angle values ​​in the target maximum point group have an interval difference within the fourth set difference, then adjusting each angle value in the target maximum point group using an error equalization method to obtain the adjustment angle value of each maximum point in the target maximum point group; and determining the target crystal line based on the adjustment angle value of each maximum point in the target maximum point group.

[0026] In this embodiment of the application, if two of the four angle values ​​in the target maximum point group are within the fourth set difference, then the error is evenly distributed to adjust each angle value in the target maximum point group. This can quickly obtain the required angle, and thus quickly determine the required target crystal line.

[0027] In one possible implementation of the first aspect embodiment, selecting a target set of maxima points from the at least one set of maxima points whose angle values ​​satisfy the second crystal line error condition includes: for each set of maxima points in the at least one set of maxima points, obtaining four angle values ​​corresponding to four local maxima points in the set of maxima points; determining whether each adjacent difference among the four angle values ​​of the set of maxima points is within a fifth predetermined difference, and obtaining a fourth determination result, wherein the adjacent difference is the difference between two adjacent angles among the four angle values ​​of the set of maxima points; and determining whether each interval difference among the four angle values ​​of the set of maxima points is within a sixth predetermined difference, and obtaining a fifth determination result, wherein the interval difference is the difference between two angle values ​​separated by one angle value among the four angle values ​​of the set of maxima points; and determining whether the angle values ​​of the maxima points in the set of maxima points satisfy the second crystal line error condition based on the fourth and fifth determination results of the set of maxima points.

[0028] In this embodiment of the application, by determining whether each adjacent difference among the four angle values ​​of the maximum point group is within a fifth set difference, and by determining whether each interval difference among the four angle values ​​of the maximum point group is within a sixth set difference, it is possible to quickly determine whether the angle value of the maximum point in the maximum point group satisfies the second crystal line error condition.

[0029] In one possible implementation of the first aspect embodiment, the range of the fifth set difference is 80°-100°, and the range of the sixth set difference is 170°-190°.

[0030] In this embodiment of the application, the above-mentioned value range is used to screen the target maximum point group that meets the second crystal line error condition. This is equivalent to first expanding the error range to determine whether the minimum requirement can be met when screening the target maximum point group. If it fails, the detection fails, thus avoiding the possibility that even if the angle value corresponding to the target maximum point group is adjusted later, the required angle may not be obtained.

[0031] In one possible implementation of the first aspect embodiment, determining the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group includes: if the angle values ​​of the four maximum points in the target maximum point group satisfy the second crystal line error condition, then adjusting each angle value in the target maximum point group using an error equalization method to obtain the adjustment angle value of each maximum point in the target maximum point group; and determining the target crystal line based on the adjustment angle value of each maximum point in the target maximum point group.

[0032] In this embodiment of the application, when the angle values ​​of the four maxima in the target maxima group meet the second crystal line error condition, the error is evenly distributed to adjust each angle value in the target maxima group. This allows for the rapid acquisition of the required angle, thereby enabling the rapid determination of the target crystal line.

[0033] Secondly, embodiments of this application also provide a crystal line adjustment device, comprising: an acquisition module, a combination module, a filtering module, and an adjustment module; the acquisition module is used to determine the convexity of all local maxima points in the acquired circumferential scanning data of the silicon rod, wherein the circumferential scanning data of the silicon rod includes multiple data points collected along the outer circumferential contour of the silicon rod; the combination module is used to combine N local maxima points to obtain at least one group of maxima points, wherein the N local maxima points are the local maxima points with the highest convexity among all local maxima points, and N is an integer greater than or equal to 4; the filtering module is used to filter out a target group of maxima points whose angle values ​​satisfy a second crystal line error condition from the at least one group of maxima points when the angle values ​​of the maxima points in the at least one group of maxima points do not satisfy a first crystal line error condition; the adjustment module is used to determine the target crystal line of the silicon rod according to the adjustment angle value of each maxima point in the target group of maxima points.

[0034] Thirdly, this application also provides an electronic device, including: a memory and a processor, the processor being connected to the memory; the memory being used to store a program; the processor being used to invoke the program stored in the memory to perform a method as provided in the first aspect embodiments above and / or in any possible manner in combination with the first aspect embodiments above.

[0035] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the method provided as described in the first aspect embodiments and / or in combination with any possible manner of the first aspect embodiments.

[0036] Other features and advantages of this application will be set forth in the following description. The objectives and other advantages of this application can be realized and obtained through the structures specifically pointed out in the written description and the accompanying drawings. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the accompanying drawings used in the embodiments will be briefly described below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. The above and other objects, features, and advantages of this application will become clearer through the accompanying drawings.

[0038] Figure 1 A schematic flowchart of a crystal wire adjustment method provided in an embodiment of this application is shown.

[0039] Figure 2 The diagram shows a waveform of circumferential scanning data of a silicon rod provided in an embodiment of this application.

[0040] Figure 3 This illustration shows a schematic diagram of the principle for determining the left and right intervals of a local maximum point according to an embodiment of this application.

[0041] Figure 4 This illustration shows a schematic diagram of the principle of determining the first convexity of a local maximum point in the left interval and the second convexity in the right interval, according to an embodiment of this application.

[0042] Figure 5 This illustration shows a schematic diagram illustrating the principle of determining the convexity of a local maximum point according to an embodiment of this application.

[0043] Figure 6 A schematic diagram of a crystal wire adjustment device provided in an embodiment of this application is shown.

[0044] Figure 7 A schematic diagram of the structure of an electronic device provided in an embodiment of this application is shown. Detailed Implementation

[0045] The technical solutions of the embodiments of this application will now be described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. The following embodiments are provided as examples to more clearly illustrate the technical solutions of this application, and should not be used to limit the scope of protection of this application. Those skilled in the art will understand that, without conflict, the following embodiments and features can be combined with each other.

[0046] It should be noted that similar reference numerals and letters in the following figures denote similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, relational terms such as "first," "second," etc., in the description of this application are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one…" does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0047] Furthermore, the term "and / or" in this application is merely a description of the relationship between related objects, indicating that there can be three relationships. For example, A and / or B can represent three situations: A exists alone, A and B exist simultaneously, and B exists alone.

[0048] In the description of the embodiments of this application, unless otherwise expressly specified and limited, the technical term "electrical connection" can refer to a direct electrical connection or an indirect electrical connection through an intermediate medium.

[0049] Given the current limitations of manual crystal wire adjustment in ensuring accuracy and its low efficiency, this application provides a fully automated crystal wire adjustment method. This method can quickly and accurately detect the angular position of the actual crystal wire on the silicon rod. Furthermore, it can automatically adjust the angular position of the actual crystal wire to meet the crystal wire error conditions when the actual crystal wire does not meet these conditions. Based on the adjusted angle value, the target crystal wire of the silicon rod (a virtual crystal wire whose angular position meets the crystal wire error conditions) is determined, facilitating subsequent silicon rod processing.

[0050] The crystal wire adjustment method described in this application is applicable to scenarios where the actual crystal wire on the silicon rod cannot meet the crystal wire error conditions and adjustment is required. The following will combine... Figure 1 The crystal wire detection method provided in this application example is described.

[0051] S1: Based on the acquired circumferential scan data of the silicon rod, determine the convexity of all local maxima points in the circumferential scan data of the silicon rod.

[0052] The circumferential scanning data of the silicon rod includes multiple data points collected along the outer circumferential contour of the silicon rod. This circumferential scanning data can be obtained by circumferentially scanning the surface of the silicon rod with a probe. When scanning the surface of the silicon rod, the probe performs a 360° scan along the outer circumferential contour of the silicon rod. Accordingly, the circumferential scanning data includes multiple data points collected along the outer circumferential contour of the silicon rod. For example, a 360° scan of a silicon rod can yield approximately 400 data points, each containing the protrusion value of the silicon rod at a specific angular position. The probe can be a probe used for scanning silicon rods on an existing integrated silicon rod processing machine.

[0053] Understandably, the silicon rod rotates uniformly during the scanning process. For example, the probe scans the silicon rod once every 0.8° (but not limited to this), thus obtaining a data point. After rotating another 0.8°, the probe scans the silicon rod again to obtain the next data point, and so on. When the silicon rod rotates 360°, the probe can collect more than 400 data points.

[0054] In some implementations, the acquired circumferential scan data of the silicon rod may be the actual scan data of the scanned silicon rod circumferentially.

[0055] In some other possible implementations, the circumferential scan data of the silicon rod can be data obtained by interpolating the actual scan data. In this implementation, the process of obtaining the circumferential scan data of the silicon rod can be: obtaining the actual scan data of the circumference of the silicon rod; inserting part of the end description data and part of the beginning description data of the actual scan data into a set position of the actual scan data to obtain the inserted actual scan data, and using the inserted actual scan data as the circumferential scan data of the silicon rod, wherein the set position is the beginning position or the end position of the actual scan data.

[0056] For example, in one possible implementation, when interpolating the actual scan data, a first specified length (configurable) of tail scan data is inserted before the starting scan data point (i.e., the beginning position) in the actual scan data, and a second specified length (configurable) of starting scan data is inserted after the tail scan data point (i.e., the end position) in the actual scan data. By inserting the starting scan data after the tail scan data point and inserting the tail scan data before the starting scan data point, it is easier to determine the subsequent peaks (maximum points) and troughs (minimum points), and to avoid processing the edge data at the beginning or end of the peak, which helps to improve the accuracy of crystal line detection.

[0057] The first specified length and the second specified length can be the same or different. For example, assuming the horizontal axis (X-axis) represents the number of times the data point was collected, and the vertical axis (Y-axis) represents the convex value of the data point (the value obtained by the probe scanning each point on the silicon rod), and assuming the actual scan data has a total of 400 data points (corresponding to horizontal coordinates 0-399), the first 20 data points (corresponding to horizontal coordinates 0-19) of the initial scan can be inserted after the 400th data point, and the last 20 data points (corresponding to horizontal coordinates 380-399) of the final scan can be inserted before the first data point. After interpolation, the actual scan data becomes 440 data points (corresponding to horizontal coordinates -20-419).

[0058] Once the circumferential scan data of the silicon rod is available, the bulge degree of all local maxima points in the circumferential scan data can be determined (a relative value calculated based on the bulge values ​​at different points on the silicon rod). This process requires first determining all local maxima points in the circumferential scan data, and then determining the bulge degree of each local maxima point.

[0059] The process of obtaining all local maxima points in the circumferential scanning data of the silicon rod can be as follows: Obtain all data point groups in the circumferential scanning data of the silicon rod, each data point group containing M consecutive data points, where M is an integer not less than 3; Traverse each data point group and filter out the point with the largest median value in the data point group, where the point with the largest median value in each data point group is a local maximum point; Based on the point with the largest median value in each data point group, obtain all local maxima points in the circumferential scanning data of the silicon rod.

[0060] To better understand, let's take M=3 (the value of M is not limited to 3) as an example. Assuming there are 440 data points (corresponding to x-coordinates -20 to 419), there are 438 (440-3+1) data point groups. For example, the first data point group (corresponding to x-coordinates -20 to -18), the second data point group (corresponding to x-coordinates -19 to -17), ..., the 437th data point group (corresponding to x-coordinates 416 to 418), and the 438th data point group (corresponding to x-coordinates 417 to 419). Traversing these 438 data point groups, we select the point with the largest median value. If the median value in the first data point group is greater than the values ​​at either end of the group, then the median value in the first data point group is a local maximum. If the median value in the second data point group is not greater than the values ​​at either end of the group, then the median value in the second data point group is not a local maximum. In this way, we can obtain all the local maxima in the circumferential scan data of the silicon rod.

[0061] After obtaining all local maxima points in the circumferential scan data of the silicon rod, the convexity of all local maxima points in the circumferential scan data of the silicon rod can be determined based on the silicon rod circumferential scan data.

[0062] In one implementation, determining the convexity of all local maxima points in the circumferential scanning data of a silicon rod based on the circumferential scanning data of the silicon rod can be achieved by: first, determining the left and right intervals of each local maxima point based on the circumferential scanning data of the silicon rod; second, determining the first convexity of each local maxima point in the left interval and the second convexity in the right interval based on the circumferential scanning data of the silicon rod; and third, determining the convexity of each local maxima point based on the first and second convexities of each local maxima point.

[0063] The process of determining the left and right intervals of each local maximum point based on the circumferential scanning data of the silicon rod can be as follows: For each local maximum point, the left and right intervals of the local maximum point are obtained according to the horizontal extension line of the local maximum point and the scanning curve corresponding to the circumferential scanning data of the silicon rod. For example, for each local maximum point, the horizontal extension line of the local maximum point can be obtained, and based on the scanning curve corresponding to the circumferential scanning data of the silicon rod, it can be determined whether there is a data point (target data point) with a larger value than the local maximum point to the left (or right) of the local maximum point. If there is, the interval from the local maximum point to the target data point is the left interval (or right interval). If not, the interval from the local maximum point to the left boundary (or right boundary) is the left interval (or right interval).

[0064] The process of determining the first convexity of each local maximum point in the left interval and the second convexity in the right interval based on the circumferential scanning data of the silicon rod can be as follows: For each local maximum point, based on the circumferential scanning data of the silicon rod, obtain the data point with the smallest convexity value in the left and right intervals of the local maximum point. The difference (absolute difference) between the convexity value of the local maximum point and the data point with the smallest convexity value in the left interval (i.e., the minimum value in the left interval) is taken as the first convexity of the left interval of the local maximum point. The difference (absolute difference) between the convexity value of the local maximum point and the data point with the smallest convexity value in the right interval (i.e., the minimum value in the right interval) is taken as the second convexity of the right interval of the local maximum point. That is, the first convexity of each local maximum point in the left interval is: the absolute difference between the convexity value of the local maximum point and the convexity value of the minimum value in the left interval; the second convexity of each local maximum point in the right interval is: the absolute difference between the convexity value of the local maximum point and the convexity value of the minimum value in the right interval.

[0065] The process of determining the convexity of each local maximum point based on its first and second convexity can be as follows: for each local maximum point, the convexity with the smaller value between the first and second convexity of that local maximum point is taken as the convexity of that local maximum point.

[0066] In one possible implementation, the sum or difference between the smaller convexity value among the first convexity value and the second convexity value and a set value can be used as the convexity value of the local maximum point. Alternatively, the product of the smaller convexity value among the first convexity value and the second convexity value and a set weight can be used as the convexity value of the local maximum point.

[0067] To better understand the process of determining the convexity of each local maximum point, the following section combines... Figures 2-4 Please provide an explanation. For example... Figure 2 As shown, Figure 2 This is a waveform diagram of the circumferential scanning data of a silicon rod. The horizontal axis corresponds to the number of times the data point was collected (each number corresponds to an angle), and the vertical axis represents the convexity value of the data point. The vertical line on the peak point (local maximum point) represents the final calculated convexity of that peak point.

[0068] Here, we select the second local maximum point from the left. Figure 3 Taking the data point indicated by the middle arrow as an example, since there is no data point to the left of the local maximum with a larger convex value than the local maximum, the left interval of the local maximum is the interval from the local maximum to the left boundary. Since there is a data point to the right of the local maximum with a larger convex value than the local maximum, the right interval is the interval from the local maximum to the larger data point. The diagram is shown below. Figure 3 As shown.

[0069] The minimum convex value is selected in both the left and right intervals. The absolute difference between the convex value of this local maximum point and the convex value of the minimum point in the left interval is obtained to obtain the first convexity. The absolute difference between the convex value of this local maximum point and the convex value of the minimum point in the right interval is obtained to obtain the second convexity. The convexity with the smaller value between the first and second convexities of the local maximum point is taken as the convexity of that local maximum point. The principle diagram is as follows. Figure 4 As shown.

[0070] The calculation process of the convexity of each local maximum and Figures 2-4 The calculation process shown is consistent.

[0071] In another implementation, determining the convexity of all local maxima in the circumferential scanning data of the silicon rod based on the acquired circumferential scanning data can be achieved by: determining the left and right intervals of each local maxima based on the circumferential scanning data; obtaining the left minimum point in the left interval and the right minimum point in the right interval for each local maxima based on the circumferential scanning data; and obtaining the convexity of each local maxima based on the left and right minimum points. Specifically, the process of obtaining the convexity of each local maxima based on the left and right minimum points can be as follows: for each local maxima, the larger value is selected from the left and right minimum points as a target comparison point; the absolute height difference between the local maxima and the target comparison point is obtained; and the convexity of the local maxima is obtained based on the absolute height difference.

[0072] The difference between this implementation method and the above method of determining the convexity of each local maximum point based on the first and second convexity of each local maximum point is that: after obtaining the left and right minimum points of each local maximum point, this implementation method no longer calculates the first and second convexity of each local maximum point based on these points. Instead, it directly obtains the larger value point from the left and right minimum points of the local maximum point as the target comparison point, and then obtains the absolute height difference between the local maximum point and the target comparison point to obtain the convexity of the local maximum point.

[0073] In one implementation, the absolute height difference can be directly used as the convexity of the local maximum point, or the sum or difference between the absolute height difference and a set value can be used as the convexity of the local maximum point, or the product of the absolute height difference and a set weight can be used as the convexity of the local maximum point, etc.

[0074] To better understand, let's combine the following... Figure 5To explain, the minimum convexity values ​​are selected in both the left and right intervals. The larger of the two minimum convexity values ​​(here, the lowest point in the right interval) is chosen as the target comparison point. The elevation difference from the local maximum point to this larger convexity value (i.e., the target comparison point) is the convexity of that local maximum point. The principle diagram is shown below. Figure 5 As shown.

[0075] S2: Combine N local maxima points to obtain at least one group of maxima points.

[0076] Among them, the N local maxima are the local maxima with the highest convexity among all local maxima. After obtaining the convexity of all local maxima, the top N local maxima with the highest convexity are selected. Since the silicon rod has 4 crystal lines (as is common industry knowledge), N is an integer greater than or equal to 4.

[0077] In one alternative implementation, N is set to [4,7]. Taking N=7 as an example, the first 7 local maxima of the convexity are assumed to be a1, a2, a3, a4, a5, a6, and a7. When N=7, it can cover as many compliant angle values ​​as possible, so that the required target angle value can be determined more quickly.

[0078] After selecting the top N local maxima with the highest convexity, the N local maxima are combined to obtain at least one group of maxima, and each group of maxima includes 4 local maxima.

[0079] Assuming the top 7 local maxima with the highest convexity are a1, a2, a3, a4, a5, a6, and a7, then selecting 4 of these local maxima and combining them will yield 35 local maxima groups.

[0080] As one possible implementation, after selecting the first N local maxima points with the highest convexity, the angle values ​​corresponding to the N local maxima points can be combined to obtain multiple angle groups, each containing 4 angle values.

[0081] S3: When the angle values ​​of the maxima in the at least one set of maxima do not meet the first crystal line error condition, select the convexity of the target set of maxima whose angle values ​​meet the second crystal line error condition from the at least one set of maxima.

[0082] After obtaining at least one set of maxima, if a set of maxima that satisfies the first crystal line error condition cannot be selected from the at least one set of maxima, then a target set of maxima whose angle values ​​satisfy the second crystal line error condition is selected from the at least one set of maxima.

[0083] Before the angle values ​​of the maxima in at least one set of maxima do not satisfy the first crystal line error condition, the crystal line adjustment method further includes: for each set of maxima in at least one set of maxima, obtaining four angle values ​​corresponding to the four local maxima in the set of maxima (which need to be sorted according to the size of the angle values, wherein, during sorting, they can be sorted in ascending (or descending) order of angle values), determining whether each adjacent difference among the four angle values ​​of the set of maxima is within a first set difference, and obtaining a first judgment result, wherein the adjacent difference is the difference between two adjacent angles among the four angle values ​​of the set of maxima; and determining whether each interval difference among the four angle values ​​of the set of maxima is within a second set difference, and obtaining a second judgment result, wherein the interval difference is the difference between two angle values ​​with an interval of one angle value among the four angle values ​​of the set of maxima; and determining whether the angle values ​​of the maxima in the set of maxima satisfy the first crystal line error condition based on the first and second judgment results of the set of maxima.

[0084] In this implementation, for each group of maxima, four angle values ​​corresponding to the four local maxima in the group of maxima are obtained. It is determined whether the difference between any two adjacent angles in the group of maxima is within a first set difference value, and a first judgment result is obtained. It is also determined whether the difference between any two angle values ​​separated by one angle value in the group of maxima is within a second set difference value, and a second judgment result is obtained. Based on the first and second judgment results of the group of maxima, it is determined whether the angle values ​​of the maxima in the group of maxima satisfy the first crystal line error condition.

[0085] If the first judgment result indicates that each adjacent difference among the four angle values ​​of the maximum point group is within a first set difference, and the second judgment result indicates that the difference between any two angle values ​​separated by one angle value in the four angle values ​​of the maximum point group is within a second set difference, then the angle value of the maximum point in this maximum point group satisfies the first crystal line error condition. Conversely, if the first judgment result indicates that each adjacent difference among the four angle values ​​of the maximum point group is not within the first set difference, and / or the second judgment result indicates that the difference between any two angle values ​​separated by one angle value in the four angle values ​​of the maximum point group is not within the second set difference, then the angle value of the maximum point in this maximum point group does not satisfy the first crystal line error condition.

[0086] In one optional implementation, the first set difference ranges from 86° to 94°, and the second set difference ranges from 176° to 184°. Taking the maximum point group (a4, a5, a6, a7) as an example, assuming the angle value corresponding to a4 > the angle value corresponding to a5 > the angle value corresponding to a6 > the angle value corresponding to a7, if the angle differences between a4 and a5, a5 and a6, and a6 and a7 satisfy 86°-94°, and the angle differences between a4 and a6, and a5 and a7 satisfy 176°-184°, then the angle values ​​of this set of maximum point values ​​are considered to satisfy the first crystal line error condition. In another embodiment, the range of the first set difference can also be 84°-96°, and the range of the second set difference can also be 174°-186°. Of course, the range of the first set difference and the second set difference can be 80°-100° and 170°-190° respectively, and can be set according to actual needs. This application embodiment does not impose specific limitations.

[0087] In one optional implementation, the implementation process of S3 may be as follows: for each of the at least one set of maxima, obtain the four angle values ​​corresponding to the four local maxima in the set of maxima (which need to be sorted according to the size of the angle values), determine whether the four angle values ​​of the set of maxima satisfy the crystal line difference condition, and obtain the third judgment result; based on the third judgment result of the set of maxima, determine whether the angle values ​​of the maxima in the set of maxima satisfy the second crystal line error condition.

[0088] Specifically, if the third judgment result indicates that the four angle values ​​of the maxima group satisfy the crystal line difference condition, then the angle values ​​of the maxima in the maxima group satisfy the second crystal line error condition; otherwise, the angle values ​​of the maxima in the maxima group do not satisfy the second crystal line error condition. If the angle values ​​of the maxima in the maxima group satisfy the second crystal line error condition, then the maxima group is the target maxima group.

[0089] In one optional implementation, the process of determining whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition may be as follows: determining whether the difference between any two adjacent angle values ​​in three of the four angle values ​​of the maximum point group is within a third preset difference value, and obtaining a first judgment sub-result of the maximum point group; determining whether there are two interval differences in the four angle values ​​of the maximum point group that are within a fourth preset difference value, and obtaining a second judgment sub-result of the maximum point group, wherein the interval difference is the difference between two angle values ​​that are one angle value apart in the four angle values ​​of the maximum point group; and determining whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition based on the first and second judgment sub-results of the maximum point group.

[0090] If the first judgment sub-result indicates that the difference between any two adjacent angle values ​​in three out of the four angle values ​​of the maxima group is within a third preset difference, or if the second judgment sub-result indicates that there are two interval differences in the four angle values ​​of the maxima group that are within a fourth preset difference, then the four angle values ​​of the maxima group satisfy the crystal line difference condition. That is, the crystal line difference condition is that the difference between any two adjacent angle values ​​in three out of the four angle values ​​of the maxima group is within a third preset difference, or that there are two interval differences in the four angle values ​​of the maxima group that are within a fourth preset difference.

[0091] When determining whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition based on the second judgment result, for example, the four angle values ​​are 0°, 80°, 180°, and 260°. The errors of 0°-180° and 80°-260° in this group are extremely low, but 0°-80° cannot pass the 90°±4° check. At this time, since the second judgment result indicates that there are two interval differences among the four angle values ​​of the maximum point group that are within the fourth set difference value, it is determined that the four angle values ​​of the maximum point group satisfy the crystal line difference condition.

[0092] The third judgment result may include the first judgment sub-result and the second judgment sub-result. The third set difference may be the same as the first set difference, and the fourth set difference may be the same as the second set difference.

[0093] If three adjacent angle values ​​in the four angle values ​​of the maximum point group satisfy the crystal line error requirement, that is, determine whether the difference between any two adjacent angle values ​​in these three angle values ​​is in the interval [86°, 94°]. If it is, then the four angle values ​​of the maximum point group are considered to satisfy the crystal line difference condition.

[0094] To better understand whether three of the four angle values ​​in a set of maxima satisfy the crystal line error requirement, the following example illustrates this. If the angle values ​​corresponding to the set of maxima are 0°, 90°, 180°, and 250°, then because the difference between two adjacent angle values, such as 180° and 250°, is not in the interval [86°, 94°], and the difference between two angle values ​​separated by one angle value, such as 90° and 250°, is also not in the interval [176°, 184°], this set of angle values ​​does not satisfy the crystal line error requirement. However, there are three angle values ​​(0°, 90°, 180°) in this set that satisfy the crystal line difference condition.

[0095] In another implementation, the process of selecting a target set of maxima points whose angle values ​​satisfy the second crystal line error condition from at least one set of maxima points may also be as follows: For each set of maxima points in at least one set of maxima points, obtain four angle values ​​corresponding to four local maxima points in the set of maxima points; determine whether each adjacent difference among the four angle values ​​of the set of maxima points is within a fifth set difference value, and obtain a fourth determination result, wherein the adjacent difference is the difference between two adjacent angles among the four angle values ​​of the set of maxima points; and determine whether each interval difference among the four angle values ​​of the set of maxima points is within a sixth set difference value, and obtain a fifth determination result, wherein the interval difference is the difference between two angle values ​​that are one angle value apart among the four angle values ​​of the set of maxima points; and determine whether the angle values ​​of the maxima points in the set of maxima points satisfy the second crystal line error condition based on the fourth and fifth determination results of the set of maxima points.

[0096] If the fourth judgment result represents that each adjacent difference among the four angle values ​​of the maximum point group is within the fifth set difference, and if the fifth judgment result represents that each interval difference among the four angle values ​​of the maximum point group is within the sixth set difference, then the angle values ​​of the maximum points in the maximum point group satisfy the second crystal line error condition, and the maximum point group is the target maximum point group.

[0097] In this embodiment, the process of determining whether the angle value of the maximum point in the maximum point group satisfies the second crystal line error condition is similar to the process of determining whether the angle value of the maximum point in the maximum point group satisfies the first crystal line error condition. The difference is that the first set difference value is replaced by the fifth set difference value, and the second set difference value is replaced by the sixth set difference value.

[0098] In this implementation, the fifth set difference range is greater than the first set difference range, and the sixth set difference range is greater than the second set difference range. This implementation method is equivalent to first expanding the error range to determine whether the minimum requirement can be met. If it fails, the detection is considered a failure.

[0099] Optionally, the fifth set difference value ranges from 80° to 100°, and the sixth set difference value ranges from 170° to 190°. Taking the maximum point group (a4, a5, a6, a7) as an example, assuming that the angle value corresponding to a4 > the angle value corresponding to a5 > the angle value corresponding to a6 > the angle value corresponding to a7, if the angle value difference between a4 and a5, a5 and a6, and a6 and a7 satisfies 80°-100°, and the angle value difference between a4 and a6, and a5 and a7 satisfies 170°-190°, then the angle value of this set of maximum point values ​​is considered to satisfy the second crystal line error condition.

[0100] In one optional implementation, the first and second crystal line error conditions mentioned above include: the difference between any two adjacent angle values ​​among the four angle values ​​sorted by angle value size satisfies 90°±A°, and the difference between two angle values ​​separated by one angle value satisfies 180°±B°, where A and B are integers. Specifically, A in the first crystal line error condition is less than A in the second crystal line error condition, and B in the first crystal line error condition is less than B in the second crystal line error condition. For example, for the first crystal line error condition, the maximum value of A can be 6, and the maximum value of B can be 6; for the second crystal line error condition, the maximum value of A can be 10, and the maximum value of B can be 10. In this case, as long as the difference between any two adjacent angle values ​​is in the interval [80°, 100°], and the difference between two angle values ​​separated by one angle value is in the interval [170°, 190°], the second crystal line error condition is considered satisfied.

[0101] S4: Determine the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group.

[0102] The aforementioned silicon rod can be either monocrystalline or polycrystalline. Before processing the silicon rod, the wire EDM machine needs to know the specific positions of the M (which can be 4) crystal lines on the rod, thus requiring crystal line detection. Typically, the four crystal lines on the silicon rod are distributed at different positions, with a relationship similar to 90°, 180°, 270°, and 360°. However, if the distribution of the crystal lines is not similar to this relationship, even after detecting the angular positions of these four crystal lines, the silicon rod cannot be processed according to the actual crystal line positions. The angular positions of the actual crystal lines need to be adjusted to meet the crystal line error requirements. Virtual crystal lines are then determined based on the adjusted angular positions, and the silicon rod is processed based on these virtual crystal lines.

[0103] The target crystal line may not be a physical crystal line on a silicon rod, but a virtual crystal line.

[0104] In one optional implementation, the process of determining the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group can be as follows: if the difference between any two adjacent angle values ​​in the three angle values ​​of the target maximum point group is within a third preset difference value, then the remaining angle values ​​in the target maximum point group are adjusted to obtain an adjusted remaining angle value, wherein the remaining angle value is one angle value in the target maximum point group other than the three angle values ​​that satisfy the crystal line difference condition; the target crystal line is determined based on the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition and the adjusted remaining angle value. Of course, in one possible implementation, if the difference between any two adjacent angle values ​​in the three angle values ​​of the target maximum point group is within a third preset difference value, the remaining angle values ​​may not be adjusted, and the four angle values ​​in the target maximum point group may be directly used as the target crystal line position.

[0105] To better understand, an example is given below. The four maxima in the target maxima set correspond to angles of 0°, 90°, 180°, and 250° (normally 266°-274°). The fourth angle has a larger deviation, but the difference between adjacent angles of the first three angles is within 90±4°, which satisfies the second crystalline error condition. In one implementation, 250° can be adjusted to any value within the 266°-274° range. In another implementation, it is not necessary to adjust the angle values ​​of this set (0°, 90°, 180°, 250°); the position of the target crystalline can be determined directly based on these angle values.

[0106] When adjusting the angle values ​​corresponding to the target local maxima group, adjustments can be made based on the error value (such as A) in the first crystal line error condition, such as adding or subtracting the error value from the current angle value. Furthermore, adjustments are made based on the relationships between the angle values ​​corresponding to the target local maxima group; different relationships require different adjustment methods.

[0107] In one optional implementation, the process of determining the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group can also be as follows: if two of the four angle values ​​in the target maximum point group have an interval difference within a fourth set difference, then each angle value in the target maximum point group is adjusted using an error equalization method to obtain the adjustment angle value of each maximum point in the target maximum point group; and the target crystal line is determined based on the adjustment angle value of each maximum point in the target maximum point group.

[0108] For example, if among the four angle values ​​sorted by angle value size, there are two interval differences (i.e., first angle value pairs) within the fourth set difference value, then during adjustment, only two angle values ​​in any one of the two first angle value pairs need to be adjusted. Assume the angle values ​​corresponding to the target maximum point group are 0°, 80°, 180°, and 260°, where 0° and 180°, and 80° and 260°, these two first angle value pairs are within the fourth set difference value. Therefore, during adjustment, only 0° and 180° can be adjusted, such as decreasing each by 5°, resulting in adjusted angle values ​​of -5° (355°), 80°, 175°, and 260°. In this way, the difference between two adjacent angle values, and the difference between two angle values ​​separated by one angle value, both meet the crystal line error requirements. Alternatively, only 80° and 260° can be adjusted, such as increasing each by 5°, resulting in adjusted angle values ​​of 0°, 85°, 180°, and 265°.

[0109] In one optional implementation, the process of determining the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group can also be as follows: if the angle values ​​of the four maximum points in the target maximum point group satisfy the second crystal line error condition, then each angle value in the target maximum point group is adjusted using an error equalization method to obtain the adjustment angle value of each maximum point in the target maximum point group; and the target crystal line is determined based on the adjustment angle value of each maximum point in the target maximum point group.

[0110] For example, suppose the angle values ​​corresponding to the target maximum point set are 0°, 90°, 190°, and 280°. The two pairs of second angle values ​​(0° and 90°, 190° and 280° – each pair containing two adjacent angle values) satisfy the first crystalline error condition. The two pairs of second angle values ​​(90° and 190°, 0° and 280°) do not satisfy the first crystalline error condition. Therefore, during adjustment, only the two angle values ​​in the second angle value pairs that do not satisfy the first crystalline difference condition can be adjusted. For example, by subtracting 5° from 190° to 90°, and subtracting 5° from 280° to 0°, the adjusted four angle values ​​become 5°, 95°, 185°, and 275°. In this way, the difference between two adjacent angle values, and the difference between two angle values ​​separated by one angle value, both satisfy the first crystalline difference condition.

[0111] This application embodiment also provides a crystal wire adjustment device 100, such as Figure 6 As shown, the crystal line adjustment device 100 includes: an acquisition module 110, a combination module 120, a screening module 130, and an adjustment module 140.

[0112] The acquisition module 110 is used to determine the convexity of all local maxima points in the acquired circumferential scan data of the silicon rod, wherein the circumferential scan data of the silicon rod includes multiple data points collected along the outer circumferential contour of the silicon rod.

[0113] The combination module 120 is used to combine N local maxima points to obtain at least one group of maxima points, wherein the N local maxima points are the local maxima points with the highest convexity among all local maxima points, and N is an integer greater than or equal to 4.

[0114] The filtering module 130 is used to filter out a target maximum point group whose angle values ​​of the maximum points satisfy the second crystal line error condition when none of the angle values ​​of the maximum points in the at least one maximum point group satisfy the first crystal line error condition.

[0115] The adjustment module 140 is used to determine the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group. Optionally, the acquisition module 110 is used to determine the left and right intervals of each local maximum point based on the circumferential scan data of the silicon rod; to acquire the left minimum point in the left interval and the right minimum point in the right interval of each local maximum point based on the circumferential scan data of the silicon rod; and to acquire the convexity of each local maximum point based on the left and right minimum points of each local maximum point.

[0116] Optionally, the acquisition module 110 is used to acquire the left and right intervals of each local maximum point based on the horizontal extension line of the local maximum point and the scanning curve corresponding to the circumferential scanning data of the silicon rod.

[0117] Optionally, the acquisition module 110 is used to, for each local maximum point, select the larger value point from the left and right minimum points of the local maximum point as the target comparison point, acquire the absolute height difference between the local maximum point and the target comparison point, and acquire the convexity of the local maximum point based on the absolute height difference.

[0118] Optionally, before determining the convexity of all local maxima points in the circumferential scanning data of the silicon rod based on the acquired circumferential scanning data of the silicon rod, the acquisition module 110 is further configured to take all data point groups in the circumferential scanning data of the silicon rod, each data point group containing M consecutive data points, where M is an integer not less than 3; traverse each data point group, filter out the point with the largest median value in each data point group, where the point with the largest median value in each data point group is a local maximum point; and obtain all local maximum points in the circumferential scanning data of the silicon rod based on the point with the largest median value in each data point group.

[0119] Optionally, the filtering module 130 is further configured to, for each of the at least one set of maxima, obtain four angle values ​​corresponding to four local maxima in the set of maxima, determine whether each adjacent difference among the four angle values ​​of the set of maxima is within a first set difference, and obtain a first determination result, wherein the adjacent difference is the difference between two adjacent angles among the four angle values ​​of the set of maxima; and determine whether each interval difference among the four angle values ​​of the set of maxima is within a second set difference, and obtain a second determination result, wherein the interval difference is the difference between two angle values ​​separated by one angle among the four angle values ​​of the set of maxima; and determine whether the angle values ​​of the maxima in the set of maxima satisfy the first crystal line error condition based on the first determination result and the second determination result of the set of maxima.

[0120] Optionally, the filtering module 130 is used to obtain four angle values ​​corresponding to four local maxima in each of the at least one set of maxima, determine whether the four angle values ​​of the set of maxima satisfy the crystal line difference condition, and obtain a third judgment result; and determine whether the angle values ​​of the maxima in the set of maxima satisfy the second crystal line error condition based on the third judgment result of the set of maxima.

[0121] Optionally, the filtering module 130 is used to determine whether the difference between any two adjacent angle values ​​in three of the four angle values ​​of the maximum point group is within a third preset difference value, and obtain a first judgment sub-result of the maximum point group; determine whether there are two interval differences in the four angle values ​​of the maximum point group that are within a fourth preset difference value, and obtain a second judgment sub-result of the maximum point group, wherein the interval difference is the difference between two angle values ​​that are one angle value apart in the four angle values ​​of the maximum point group; and determine whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition based on the first judgment sub-result and the second judgment sub-result of the maximum point group.

[0122] Optionally, the filtering module 130 is configured to, for each of the at least one set of maxima, obtain four angle values ​​corresponding to four local maxima in the set of maxima, determine whether each adjacent difference among the four angle values ​​of the set of maxima is within a fifth set difference, and obtain a fourth determination result, wherein the adjacent difference is the difference between two adjacent angles among the four angle values ​​of the set of maxima; and determine whether each interval difference among the four angle values ​​of the set of maxima is within a sixth set difference, and obtain a fifth determination result, wherein the interval difference is the difference between two angle values ​​separated by one angle among the four angle values ​​of the set of maxima; and determine whether the angle values ​​of the maxima in the set of maxima satisfy the second crystal line error condition based on the fourth and fifth determination results of the set of maxima.

[0123] Optionally, the adjustment module 140 is configured to adjust the remaining angle values ​​in the target maximum point group if the difference between any two adjacent angle values ​​in the three angle values ​​of the target maximum point group is within the third preset difference value, thereby obtaining an adjusted remaining angle value, wherein the remaining angle value is an angle value in the target maximum point group other than the three angle values ​​that satisfy the crystal line difference condition; and to determine the target crystal line based on the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition and the adjusted remaining angle value.

[0124] Optionally, the adjustment module 140 is used to adjust each angle value in the target maximum point group by means of an error equalization method if two of the four angle values ​​in the target maximum point group are within the fourth set difference value, thereby obtaining the adjustment angle value of each maximum point in the target maximum point group; and to determine the target crystal line based on the adjustment angle value of each maximum point in the target maximum point group.

[0125] The crystal wire adjustment device 100 provided in this application embodiment has the same implementation principle and technical effect as the aforementioned method embodiment. For the sake of brevity, any parts not mentioned in the device embodiment can be referred to the corresponding content in the aforementioned method embodiment.

[0126] like Figure 7 As shown, Figure 7 This diagram illustrates a structural block diagram of an electronic device 200 provided in an embodiment of this application. The electronic device 200 includes: a transceiver 210, a memory 220, a communication bus 230, and a processor 2M0.

[0127] The transceiver 210, the memory 220, and the processor 2M0 are electrically connected directly or indirectly to achieve data transmission or interaction. For example, these components can be electrically connected to each other through one or more communication buses 230 or signal lines. The transceiver 210 is used to send and receive data. The memory 220 is used to store computer programs, such as... Figure 6 The software functional module shown is the crystal wire adjustment device 100. The crystal wire adjustment device 100 includes at least one software functional module that can be stored as software or firmware in the memory 220 or embedded in the operating system (OS) of the electronic device 200. The processor 2M0 is used to execute executable modules stored in the memory 220, such as the software functional module or computer program included in the crystal wire adjustment device 100. For example, the processor 2M0 is used to execute the crystal wire detection method described above.

[0128] The memory 220 may be, but is not limited to, random access memory (RAM), read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), etc.

[0129] The processor 2M0 may be an integrated circuit chip with signal processing capabilities. The aforementioned processor can be a general-purpose processor, including a Central Processing Unit (CPU), a Network Processor (NP), a microprocessor, etc.; it can also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this application. Alternatively, the processor 2M0 can also be any conventional processor.

[0130] Among them, the aforementioned electronic devices 200 include, but are not limited to, mobile phones, tablets, computers, servers, and silicon rod processing integrated machines.

[0131] This application embodiment also provides a non-volatile computer-readable storage medium (hereinafter referred to as the storage medium) storing a computer program, which is executed by a computer such as the electronic device 200 described above to perform the crystal wire adjustment method described above.

[0132] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0133] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can also be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods, and computer program products according to various embodiments of this application. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order than those marked in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram and / or flowchart, and combinations of blocks in block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0134] In addition, the functional modules in the various embodiments of this application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0135] If the aforementioned functions are implemented as software functional modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a computer-readable storage medium and includes several instructions to cause a computer device (which may be a personal computer, laptop, server, or electronic device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned computer-readable storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0136] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for adjusting crystal lines, characterized in that, include: Based on the acquired circumferential scanning data of the silicon rod, the convexity of all local maxima points in the circumferential scanning data of the silicon rod is determined, wherein the circumferential scanning data of the silicon rod includes multiple data points collected along the outer circumferential contour of the silicon rod. By combining N local maxima points, at least one group of maxima points is obtained, wherein the N local maxima points are the local maxima points with the highest convexity among all local maxima points, and N is an integer greater than or equal to 4; When the angle values ​​of the maxima in the at least one set of maxima do not satisfy the first crystal line error condition, a target set of maxima whose angle values ​​satisfy the second crystal line error condition is selected from the at least one set of maxima. The target crystal line of the silicon rod is determined based on the adjustment angle value of each maximum point in the target maximum point group; The first crystal line error condition and the second crystal line error condition include: the difference between any two adjacent angle values ​​among the four angle values ​​sorted by angle value size satisfies 90°±A°; the difference between two angle values ​​separated by one angle value satisfies 180°±B°, where A and B are integers. In the first crystal line error condition, A is less than A in the second crystal line error condition, and B in the first crystal line error condition is less than B in the second crystal line error condition. Furthermore, as long as the difference between any two adjacent angle values ​​is in the interval [80°, 100°], and the difference between two angle values ​​separated by one angle value is in the interval [170°, 190°], the second crystal line error condition is considered to be satisfied.

2. The crystal line adjustment method according to claim 1, characterized in that, Based on the acquired circumferential scan data of the silicon rod, determine the bulge degree of all local maxima points in the circumferential scan data of the silicon rod, including: Based on the circumferential scanning data of the silicon rod, the left and right intervals of each local maximum point are determined; Based on the circumferential scanning data of the silicon rod, the minimum point in the left region of the left interval and the minimum point in the right region of the right interval are obtained for each local maximum point. The convexity of each local maximum point is obtained based on the left and right minimum points of each local maximum point.

3. The crystal line adjustment method according to claim 2, characterized in that, Based on the circumferential scan data of the silicon rod, the left and right intervals of each local maximum point are determined, including: For each local maximum point, the left and right intervals of the local maximum point are obtained based on the horizontal extension line of the local maximum point and the scanning curve corresponding to the circumferential scanning data of the silicon rod.

4. The crystal line adjustment method according to claim 2, characterized in that, Based on the left and right minimum points of each local maximum point, obtain the convexity of each local maximum point, including: For each local maximum point, the larger value point is selected from the minimum points in the left and right regions of the local maximum point as the target comparison point. The absolute height difference between the local maximum point and the target comparison point is obtained, and the convexity of the local maximum point is obtained based on the absolute height difference.

5. The crystal line adjustment method according to claim 1, characterized in that, Before determining the bulge degree of all local maxima points in the acquired circumferential scan data of the silicon rod, the method further includes: Obtain all data point groups in the circumferential scan data of the silicon rod, each data point group containing M consecutive data points, where M is an integer not less than 3; Iterate through each data point group and filter out the point with the largest median value in each data point group. The point with the largest median value in each data point group is a local maximum point. Based on the point with the largest median value in each data point group, obtain all local maxima points in the circumferential scan data of the silicon rod.

6. The crystal line adjustment method according to claim 1, characterized in that, Before the angle values ​​of the maxima in at least one set of maxima do not satisfy the first crystal line error condition, the method further includes: For each of the at least one set of maxima points, obtain the four angle values ​​corresponding to the four local maxima points in the set of maxima points, determine whether each adjacent difference in the four angle values ​​of the set of maxima points is within a first set difference, and obtain a first determination result, wherein the adjacent difference is the difference between two adjacent angles in the four angle values ​​of the set of maxima points. And determine whether each interval difference among the four angle values ​​of the maximum point group is within the second set difference, and obtain the second judgment result, wherein the interval difference is the difference between two angle values ​​that are separated by one angle value among the four angle values ​​of the maximum point group; Based on the first and second judgment results of the maximum point group, determine whether the angle value of the maximum point in the maximum point group satisfies the first crystal line error condition.

7. The crystal line adjustment method according to claim 6, characterized in that, The first set difference ranges from 86° to 94°, and the second set difference ranges from 176° to 184°.

8. The crystal line adjustment method according to claim 1, characterized in that, Selecting a target set of maxima points from the at least one set of maxima points whose angle values ​​satisfy the second crystal line error condition includes: For each of the at least one set of maxima, obtain the four angle values ​​corresponding to the four local maxima in the set of maxima, determine whether the four angle values ​​of the set of maxima satisfy the crystal line difference condition, and obtain the third judgment result. Based on the third judgment result of the maximum point group, determine whether the angle value of the maximum point in the maximum point group satisfies the second crystal line error condition.

9. The crystal line adjustment method according to claim 8, characterized in that, Determine whether the four angle values ​​of the maxima set satisfy the crystal line difference condition, including: Determine whether the difference between any two adjacent angle values ​​in three of the four angle values ​​of the maximum point group is within the third set difference value, and obtain the first judgment sub-result of the maximum point group; Determine whether there are two interval differences among the four angle values ​​of the maximum point group that are within the fourth set difference value, and obtain the second judgment sub-result of the maximum point group. The interval difference is the difference between two angle values ​​that are one angle value apart among the four angle values ​​of the maximum point group. Based on the first and second judgment results of the maximum point group, determine whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition.

10. The crystal line adjustment method according to claim 9, characterized in that, Determining the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group includes: If the difference between any two adjacent angle values ​​in the three angle values ​​of the target maximum point group is within the third set difference value, then the remaining angle values ​​in the target maximum point group are adjusted to obtain the adjusted remaining angle values, wherein the remaining angle values ​​are one angle value in the target maximum point group other than the three angle values ​​that satisfy the crystal line difference condition; The target crystal line is determined based on the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition and the adjusted remaining angle value.

11. The crystal line adjustment method according to claim 9, characterized in that, Determining the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group includes: If two of the four angle values ​​in the target maximum point group are within the fourth set difference, then each angle value in the target maximum point group is adjusted using the error equalization method to obtain the adjusted angle value of each maximum point in the target maximum point group. The target crystal line is determined based on the adjustment angle value of each maximum point in the target maximum point group.

12. The crystal line adjustment method according to claim 1, characterized in that, Selecting a target set of maxima points from the at least one set of maxima points whose angle values ​​satisfy the second crystal line error condition includes: For each of the at least one set of maxima points, obtain four angle values ​​corresponding to the four local maxima points in the set of maxima points, determine whether each adjacent difference in the four angle values ​​of the set of maxima points is within a fifth set difference, and obtain a fourth determination result, wherein the adjacent difference is the difference between two adjacent angles in the four angle values ​​of the set of maxima points; and determine whether each interval difference in the four angle values ​​of the set of maxima points is within a sixth set difference, and obtain a fifth determination result, wherein the interval difference is the difference between two angle values ​​that are one angle value apart in the four angle values ​​of the set of maxima points; Based on the fourth and fifth judgment results of the maximum point group, determine whether the angle value of the maximum point in the maximum point group satisfies the second crystal line error condition.

13. The crystal line adjustment method according to claim 12, characterized in that, Determining the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group includes: If the angle values ​​of the four maxima in the target maxima set meet the second crystal line error condition, then the error equalization method is used to adjust each angle value in the target maxima set to obtain the adjusted angle value of each maxima in the target maxima set. The target crystal line is determined based on the adjustment angle value of each maximum point in the target maximum point group.

14. A crystal wire adjustment device, characterized in that, include: The acquisition module is used to determine the convexity of all local maxima points in the acquired circumferential scan data of the silicon rod, wherein the circumferential scan data of the silicon rod includes multiple data points collected along the outer circumferential contour of the silicon rod. The combination module is used to combine N local maxima points to obtain at least one group of maxima points, wherein the N local maxima points are the local maxima points with the highest convexity among all local maxima points, and N is an integer greater than or equal to 4. The filtering module is used to filter out a target maximum point group whose angle values ​​of the maximum points satisfy the second crystal line error condition when none of the angle values ​​of the maximum points in the at least one maximum point group satisfy the first crystal line error condition. An adjustment module is used to determine the target crystal line of the silicon rod based on the adjustment angle value of each maximum point in the target maximum point group; The first crystal line error condition and the second crystal line error condition include: the difference between any two adjacent angle values ​​among the four angle values ​​sorted by angle value size satisfies 90°±A°; the difference between two angle values ​​separated by one angle value satisfies 180°±B°, where A and B are integers. In the first crystal line error condition, A is less than A in the second crystal line error condition, and B in the first crystal line error condition is less than B in the second crystal line error condition. Furthermore, as long as the difference between any two adjacent angle values ​​is in the interval [80°, 100°], and the difference between two angle values ​​separated by one angle value is in the interval [170°, 190°], the second crystal line error condition is considered to be satisfied.

15. An electronic device, characterized in that, include: A memory and a processor, wherein the processor is connected to the memory; The memory is used to store programs; The processor is configured to invoke a program stored in the memory to execute the method as described in any one of claims 1-13.

16. A computer-readable storage medium, characterized in that, It stores a computer program thereon, which, when executed by a processor, performs the method as described in any one of claims 1-13.

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