Preparation method of full-color Micro-LED display device

Abstract

The invention provides a preparation method of a full-color Micro-LED display device, and the method comprises the steps: sequentially preparing single-color Micro-LED chip arrays and a first receiving substrate, precisely fixing the three single-color Micro-LED chip arrays at preset positions of the first receiving substrate through thermocompression bonding, and respectively removing substrates; adding a strong-viscosity light-transmitting material on one side, facing the full-color Micro-LED chip array, of the first receiving substrate, and fixing the prepared second receiving substrate on the first receiving substrate through the strong-viscosity light-transmitting material; the first receiving substrate is removed, and the reserved second receiving substrate, the strong-viscosity light-transmitting material, the full-color Micro-LED chip array and the metal bump electrodes on the Micro-LED chips form a pre-bonding module; and the pre-bonding module and the driving substrate are accurately fixed together in a thermocompression bonding mode, and preparation of the full-color Micro-LED display device is completed. According to the invention, the accuracy, stability and transfer efficiency of multi-time transfer integration of the full-color Micro-LED can be improved, the process is simple, the production cost is reduced, and the method is suitable for large-scale commercial production.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor light-emitting devices, and particularly to a method for manufacturing a full-color Micro-LED display device. Background Art

[0002] Micro-LED technology was initially proposed by a research team at Texas Tech University in 2000. Compared with traditional LED technology, Micro-LED has a small structure, higher light extraction efficiency, better current diffusion, and lower self-heating effect. In addition, from an electrical perspective, Micro-LED also has advantages such as short response time and low power consumption.

[0003] Currently, commercial Micro-LED transfer integration schemes can basically be divided into:

[0004] I. Schemes of elastomeric stamp transfer (PDMS Stamp Transfer) and laser transfer (Laser Transfer) applicable to large-screen display devices. Elastomeric stamp transfer utilizes the van der Waals force between the stamp and Micro-LED to selectively fix the Micro-LED chips on the donor substrate; laser transfer uses pulsed high-energy laser to irradiate the transparent substrate, so that the local pressure of the irradiated area material increases rapidly, separating the Micro-LED on the absorbent material layer from the transparent substrate and placing it on the target substrate.

[0005] The above two schemes can realize the manufacture of full-color Micro-LED display devices, but there are still deficiencies. For example, in PDMS elastomeric stamp transfer, since the van der Waals force used is a weak binding force, external interference easily affects the pick-up and placement rate of chips during the transfer process; at the same time, the Micro-LED chips transferred by van der Waals force usually have too large a pitch and cannot achieve the preparation of high-density and high-precision Micro-LED display devices. In addition, the effect of laser transfer is affected by the homogenization degree of the laser spot, so there is also a problem of vacancies at the edge positions of the transferred chip array.

[0006] II. A monolithic integration solution applicable to small-screen display devices (such as AR and VR devices). The monolithic integration solution is mainly used to fabricate display devices with a small size (<2 inches). In this solution, an LED epitaxial wafer is directly made into a Micro-LED array, and then the entire array is transferred onto a driving substrate. Its advantage lies in that the entire process is fabricated by semiconductor processes, and the key pixel size can be defined by a lithography machine. Compared with the mass transfer solution, this technology can achieve a smaller pixel pitch (the minimum limit depends on the array pattern pitch on the epitaxial substrate), and there is no need for secondary transfer similar to the mass transfer technology, achieving a display with ultra-high pixels and ultra-high resolution in one go. However, the characteristic of only performing one transfer throughout the monolithic integration solution also makes it difficult to apply to the fabrication of full-color Micro-LED display devices.

[0007] Therefore, how to reduce the influence during the chip picking and placing process, improve the accuracy of placement during the transfer process, and the uniformity of the Micro-LED chip array, while achieving the fabrication of high-density and high-precision full-color Micro-LED display devices, is a current technical problem.

[0008] In summary, in view of the deficiencies of the existing technology, it is necessary to provide a method capable of fabricating full-color Micro-LED display devices with high uniformity and high density. Summary of the Invention

[0009] Based on this, the purpose of the present invention is to provide a method for fabricating a full-color Micro-LED display device to correspondingly fabricate a Micro-LED display device with high uniformity and high density.

[0010] One aspect of the embodiments of the present invention proposes:

[0011] A method for fabricating a full-color Micro-LED display device, wherein the method includes:

[0012] Successively fabricate three monochromatic Micro-LED chip arrays and a first receiving substrate, and precisely fix the three monochromatic Micro-LED chip arrays at preset positions on the first receiving substrate by means of thermocompression bonding, and remove the substrates of the three monochromatic Micro-LED chip arrays to complete the transfer integration of the full-color Micro-LED chip array;

[0013] Add a strongly adhesive light-transmitting material on the side of the first receiving substrate facing the full-color Micro-LED chip array, fabricate a second receiving substrate, and fix the second receiving substrate on the first receiving substrate through the strongly adhesive light-transmitting material;

[0014] Remove the first receiving substrate, and the remaining second receiving substrate, the strongly adhesive light-transmitting material, the full-color Micro-LED chip array, and the metal bump electrodes on the Micro-LED chips form a pre-bonding module;

[0015] Thermocompression bond the metal bump electrodes of the pre-bonding module and the bonding metal bumps of the driving substrate, and use the strong bonding force between metals to accurately fix the pre-bonding module and the driving substrate to complete the preparation of the full-color Micro-LED display device.

[0016] The beneficial effects of the present invention are: (1) Based on the strong bonding force, multiple high-precision transfer integrations of Micro-LED chips are achieved. By using the direct thermocompression bonding method between metals, multiple precise transfers can be directly performed on the entire Micro-LED chip array. The present invention not only solves the problem that monolithic integration can only fabricate monochromatic Mciro-LED display devices, but also compared with the van der Waals force-based massive transfer technology solution with weak binding force, the strong bonding force obtained by thermocompression bonding between metals can effectively improve the transfer accuracy and efficiency of Micro-LEDs. The transfer process is simple, reducing the processing cost of full-color Micro-LEDs and being suitable for large-scale commercial production.

[0017] (2) The strongly adhesive material is used for the secondary transfer. Compared with the traditional massive transfer scheme using van der Waals force, the adsorption force and fixing ability of the strongly adhesive material to the chips are greatly enhanced, which can effectively reduce the damage and influence of external interference on the chips during the transfer process. Therefore, the transfer process can ensure the uniformity and integrity of the chip array.

[0018] (3) The preparation process is simple. The strongly adhesive material and the second receiving substrate are both high-light-transmitting materials. Therefore, after the electrical connection with the driving substrate is completed, the emitted light of the Micro-LED chip array will not be blocked by the substrate, avoiding the process of removing the chip substrate again, and simplifying the preparation process.

[0019] Preferably, the main material of the prepared first receiving substrate is the same as the main material of the epitaxial substrate in the prepared monochromatic Micro-LED chip array, and the main material of the first receiving substrate is silicon or sapphire.

[0020] Preferably, the first receiving substrate includes a bonding material layer, and the bonding material layer is prepared from any one or a combination of metal materials Ni, Cr, Pt, and Au, and the bonding material layer includes a first metal layer and a second metal layer arranged in sequence from top to bottom.

[0021] Further, the monochromatic Micro-LED chip array includes red, green, and blue Micro-LED chip arrays, and the metal bump electrodes are provided on each of the Micro-LED chips.

[0022] Preferably, the three-color monochromatic Micro-LED chip arrays are sequentially bonded by a bonder in a thermocompression bonding manner to achieve strong bonding between the chip metal bump electrodes and preset positions on the first receiving substrate, and the substrate material is removed; to achieve precise transfer and fixation of the Micro-LED chip array on the first receiving substrate.

[0023] Preferably, the second receiving substrate is a transparent substrate, and the material for preparing the transparent substrate is used in the temperature range of 25 - 400 °C and the difference in thermal expansion coefficient between it and silicon is within 10%.

[0024] More preferably, the second receiving substrate is borosilicate glass.

[0025] Preferably, the strongly adhesive light-transmitting material is a transparent material, and the transparent material has fluidity and adhesiveness at room temperature.

[0026] More preferably, the strongly adhesive light-transmitting material is an ultraviolet-curable UV glue, and the ultraviolet-curable UV glue cures under ultraviolet irradiation.

[0027] Preferably, the bonding temperature between the pre-bonding module and the driving substrate is 50 - 400 °C, and accurate fixation between the pre-bonding module and the driving substrate is completed through the strong bonding force between metals.

[0028] Additional aspects and advantages of the present invention will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a flowchart of a method for manufacturing a full-color Micro-LED display device provided by an embodiment of the present invention;

[0030] Figure 2 It is a schematic diagram of a first receiving substrate provided by an embodiment of the present invention;

[0031] Figure 3 It is a schematic diagram of three monochromatic Micro-LED chip arrays provided by an embodiment of the present invention;

[0032] Figure 4 It is a schematic diagram of three monochromatic Micro-LED chip arrays transferred to the first receiving substrate provided by the present invention;

[0033] Figure 5Schematic diagram of bonding between the first receiving substrate and the second receiving substrate provided by an embodiment of the present invention;

[0034] Figure 6 Schematic diagram of the structure of the pre-bonding module provided by an embodiment of the present invention;

[0035] Figure 7 Schematic diagram of the structure of a full-color Micro-LED display device provided by an embodiment of the present invention;

[0036] Figure 8 Schematic diagram of the patterned GaN epitaxial structure provided by an embodiment of the present invention;

[0037] Figure 9 Schematic diagram of the structure of a Micro-LED chip array with a laser-lifted sapphire substrate provided by an embodiment of the present invention;

[0038] Figure 10 Schematic diagram of the structure of a full-color Micro-LED display device with the second receiving substrate removed provided by an embodiment of the present invention.

[0039] The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings. Specific Embodiments

[0040] For ease of understanding of the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present invention more thorough and comprehensive.

[0041] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present invention belongs. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0043] Please refer to Figures 1 to 9, shown is the method for fabricating a full-color Micro-LED display device in Embodiment 1 of the present invention. The method for fabricating a full-color Micro-LED display device provided in this embodiment can effectively ensure the uniformity and integrity after the transfer of the chip array, and thus can ultimately fabricate an LED display device with high uniformity and high density, correspondingly improving the user experience.

[0044] Specifically, this embodiment provides:

[0045] A method for fabricating a full-color Micro-LED display device, wherein the method includes:

[0046] Step S10, sequentially fabricate three monochromatic Micro-LED chip arrays 200 and a first receiving substrate 100, and precisely fix the three monochromatic Micro-LED chip arrays 200 at preset positions on the first receiving substrate 100 by means of thermocompression bonding, and remove the substrates of the three monochromatic Micro-LED chip arrays 200 to complete the transfer integration of the full-color Micro-LED chip array 200;

[0047] Step S20, add a strongly adhesive light-transmitting material 300 on the side of the first receiving substrate 100 facing the full-color Micro-LED chip array 200, fabricate a second receiving substrate 400, and fix the second receiving substrate 400 on the first receiving substrate 100 through the strongly adhesive light-transmitting material 300;

[0048] Step S30, remove the first receiving substrate 100, and the remaining second receiving substrate 400, the strongly adhesive light-transmitting material 300, the full-color Micro-LED chip array 200, and the metal bump electrodes 210 on the Micro-LED chips form a pre-bonding module;

[0049] Step S40, perform thermocompression bonding on the metal bump electrodes 210 of the pre-bonding module and the bonding metal bumps 503 on the fabricated driving substrate 500, and fix the pre-bonding module and the driving substrate 500 through the strong bonding force between the metals to generate a corresponding full-color Micro-LED display device.

[0050] Specifically, in order to fabricate a full-color Micro-LED display device with good uniformity and high density, it is necessary to first fabricate three monochromatic silicon-based Micro-LED chips of red, green, and blue. Specifically, the chip is processed from an epitaxial wafer. Among them, the fabrication process of the monochromatic Micro-LED chip includes: chip mesa etching, chip isolation etching, evaporation of N and P metal bump electrodes 210, and chip sidewall passivation process.

[0051] Preferably, metal bump electrodes 210 are provided on each Micro-LED chip. Specifically, the metal bump electrodes 210 of each Micro-LED chip are prepared by the process of evaporating and stripping metal. Specifically, the metal is a Cr, Au laminated metal, where the thickness of Cr is 5 - 30 nm and the thickness of Au is 400 - 800 nm. Specifically, as Figure 2 shown, the above-mentioned first receiving substrate 100 includes a main material layer 101 and a bonding material layer. Among them, the bonding material layer is divided into a first metal layer 102 and a second metal layer 103.

[0052] Preferably, the main material layer 101 is made of the same material as the epitaxial substrate of the above-mentioned Micro-LED chip, both being single-sided polished silicon or sapphire, and having a thickness of 170 - 1030 μm. During the actual application process, the above-mentioned main material layer 101 plays a main supporting role to ensure the rigidity of the first receiving substrate 100. In addition, the above-mentioned first metal layer 102 is metal Cr, with a thickness of 50 - 300 nm. Specifically, this layer of metal material mainly plays a bonding role, so the thickness is relatively thin. Correspondingly, the above-mentioned second metal layer 103 is metal Au, with a thickness of 200 - 600 nm, and currently the second metal layer 103 is on the outermost layer of the surface of the first receiving substrate 100. It mainly serves as the metal material layer for thermocompression bonding with the metal bump electrodes 210 on the above-mentioned Micro-LED chip array 200 to complete the corresponding fixed connection.

[0053] Specifically, as Figure 3 shown, three monochromatic Micro-LED chip arrays provided in this embodiment are red chip 201, green chip 202, and blue chip 203.

[0054] The monochromatic Micro-LED chip array 200 provided in this embodiment is arranged sequentially on the first receiving substrate 100. Among them, referring to Figure 4 , the red chip 201, green chip 202, and blue chip 203 respectively occupy the order positions from left to right within one array period, as shown in Figure 4 -a, Figure 4 -b, Figure 4 -c respectively. The metal Au in the metal bump electrodes 210 of the above-mentioned monochromatic Micro-LED chip and the second metal layer 103 of the first receiving substrate 100 are connected together by thermocompression bonding. During the thermocompression bonding process, the high-temperature bonding between the metals can make the connection between the above-mentioned Micro-LED chip and the surface of the first receiving substrate 100 firm and stable, not easy to fall off, so as to correspondingly improve the stability performance.

[0055] Preferably, the electrode metal in the above three monochromatic Micro-LED chip arrays 200 is bonded to the second metal layer 102 in the first receiving substrate 100 by thermocompression bonding. It should be noted that during the thermocompression bonding process, the bonding pressure generated is 10 - 60 Kg, and the bonding temperature is 180 - 400 °C.

[0056] Preferably, during the process of removing the silicon substrate from the above three monochromatic Micro-LED chip arrays 200, a corrosion solution prepared from a strongly acidic mixed solution of nitric acid and hydrofluoric acid should be used for removal, which can correspondingly improve the removal efficiency of the substrate.

[0057] Specifically, as Figure 5 shown, the strongly adhesive light-transmitting material 300 provided in this embodiment is above the first receiving substrate 100 and the monochromatic Micro-LED chip array 200. It should be noted that the strongly adhesive light-transmitting material 300 has a certain fluidity and light transmittance at room temperature, so that it can be prepared on the first receiving substrate 100 by coating. Specifically, the relative position of the second receiving substrate 400 and the first receiving substrate 100 can be fixed by using the adhesiveness of the strongly adhesive light-transmitting material. Preferably, the above second receiving substrate 400 is set as a transparent substrate. When the second receiving substrate is thermocompression bonded to the silicon-based driving substrate, the temperature is relatively high. The increase in temperature causes the material to have a lateral expansion in the plane, so that the metal bump electrodes prepared on the surfaces of the second receiving substrate and the silicon-based driving substrate will also have a positional offset in the plane, affecting the accuracy of thermocompression bonding. Therefore, the thermal expansion coefficient of the second receiving substrate should differ from that of silicon by within 10% in the temperature range of 25 - 400 °C. Under the condition of ensuring the bonding accuracy, the degree of thermal mismatch between the two materials is required to be within a controllable range.

[0058] Specifically, the above strongly adhesive light-transmitting material 300 can be an ultraviolet-curable UV glue. In specific implementation, the current ultraviolet-curable UV glue can be prepared on the first receiving substrate 100 and the monochromatic Micro-LED chip array 200 by manual coating.

[0059] Optionally, before ultraviolet curing, the thickness of the current ultraviolet-curable UV glue can be thinned by mechanical pressing to make its thickness within 100 μm, and the ultraviolet curing time is controlled to be 4 - 8 hours. Preferably, the above second receiving substrate 400 is set as borosilicate glass, and its thermal expansion coefficient is close to that of silicon. The prepared second receiving substrate 400 is attached and left standing in a vacuum oven for 3 hours to allow the bubbles in the above ultraviolet-curable UV glue to escape from the material system. Finally, it is cured by irradiating with an ultraviolet lamp for 4 - 8 hours, so as to achieve a tight fit between the first and second receiving substrates 400.

[0060] Specifically, a mixed acid solution (nitric acid, hydrofluoric acid, acetic acid) is used to corrode and remove the support material layer, i.e., the above-mentioned main material layer, in the first receiving substrate 100, and the corrosion time is 20 - 40 minutes; after the main material layer 101 is corroded, since the above-mentioned mixed acid solution has a weak corrosion ability for the first and second metal layers of the bonding material layer in the first receiving substrate 100, a plasma etching method is used to remove the remaining part, including the metal bump electrodes 210 of the Micro-LED chip array 200.

[0061] Preferably, before using the mixed acid solution for corrosion, the support material layer of the first receiving substrate 100 can be mechanically thinned to keep its thickness at 50 - 100 μm. In addition, the etching gas used for plasma etching is Ar plasma.

[0062] Specifically, the above-mentioned driving substrate 500 can deposit the above-mentioned bonding metal bumps 503 by a lift-off lithography method; among them, the bonding metal bumps 503 can be made of one or more of metals such as indium, titanium, aluminum, nickel, gold, chromium, platinum, etc.; specifically, as a specific embodiment, a photoresist is used to make a mask pattern, and the substrate silicon dioxide protective layer is wet-etched to expose the electrode contact holes. In addition, a method such as electron beam evaporation, plasma sputtering, or thermal evaporation is used to deposit metal Au as the bonding metal bumps 503; further, a lift-off method is used to remove the metal outside the electrode contact holes, so that the metal Au is electrically connected to the substrate electrode layer through the electrode contact holes.

[0063] Specifically, please refer to Figure 7 , the structure of the full-color Micro-LED display device provided in this embodiment includes: a pre-bonding module and a driving substrate 500, and the pre-bonding module is placed on the driving substrate 500. The pre-bonding module includes a Micro-LED chip array 200, metal bump electrodes 210 on the chip, a strongly adhesive light-transmitting material 300, and a second receiving substrate 400; the driving substrate 500 includes a silicon-based driving circuit layer 501, a substrate silicon dioxide protective layer 502, and bonding metal bumps 503.

[0064] Embodiment 2:

[0065] The preparation method provided in this embodiment is the same as that in Embodiment 1, and the difference is that the strongly adhesive light-transmitting material 300 used in this embodiment is different from the ultraviolet-curable UV glue in Embodiment 1. Specifically, as Figure 4 shown, the strongly adhesive light-transmitting material 300 is SU-8 photoresist, and it is prepared by a mechanical spin-coating method. After coating the glue, the second receiving substrate 400 is aligned and bonded, and it is pressed tightly with a bonding machine; then the bonded sample is placed on a hot stage for heating and curing.

[0066] Specifically, when spin-coating the glue, keep the rotation speed of the spin coater at 2000 - 4000 r / min and spin-coat for 20 - 40 s; keep the heating temperature of the hot plate at 260 °C and heat for 15 - 30 minutes.

[0067] Example Three:

[0068] The preparation method provided in this example is the same as that in Example One, the difference being that the processed monochromatic patterned epitaxial wafer is used in this example, and this example can achieve multiple transfers at the wafer scale of Micro-LED. As Figure 8 shown, the patterned epitaxial wafer 600 includes: red patterned epitaxy 601, green imaged epitaxy 602, and blue patterned epitaxy 603. Multiple Micro-LED chip array 200 structures should be provided on the patterned epitaxial wafer 600. Further, please refer to Figures 1 - 4 , the process of transferring the above monochromatic patterned epitaxial wafer to the first receiving substrate 100 is the same as that of the monochromatic Mciro-LED chip array 200 in Example One.

[0069] Example Four:

[0070] The preparation method provided in this example is the same as that in Example One, the difference being that the substrate materials of the three monochromatic Micro-LED chip arrays 200 in this example are sapphire. As Figure 9 shown, the sapphire epitaxial substrate 700 is different from the silicon substrate in Example One in that it uses a laser lift-off method instead of chemical etching with a strong acidic solution (refer to Figure 9 -a), and the sapphire substrate 700 is separated from the above Micro-LED chip array 200 (refer to Figure 9 -b).

[0071] Example Five

[0072] The preparation method provided in this example is the same as that in Example One, the difference being that the second receiving substrate 400 is removed after the pre-bonding module and the driving substrate 500 are completed with thermocompression bonding and fixed.

[0073] Specifically, referring to Figure 5 and Figure 6 , different from Example One, the strong adhesive light-transmitting material 300 in this example is a photosensitive material 301. After the first receiving substrate 100 and the second receiving substrate 400 are bonded, stable bonding is achieved through high-temperature curing. After the pre-bonding module and the driving substrate 500 are completed with thermocompression bonding and fixed, as Figure 10 shown, after specific light irradiation (refer to Figure 10 -a), the adhesion between the strong adhesive light-transmitting material 300 and the second receiving substrate 400 is weakened, and the second receiving substrate 400 can be separated from the pre-bonding module (refer toFigure 10 -b). After the second receiving substrate 400 is removed, the optical crosstalk phenomenon of the full-color Micro-LED chip array 200 can be improved, and the overall display effect of the display device can be improved.

[0074] In summary, the method for manufacturing a full-color Micro-LED display device provided in this embodiment can effectively ensure the uniformity and integrity after the chip array is transferred, and thus can finally manufacture an LED display device with high uniformity and high density, correspondingly improving the user experience.

[0075] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0076] The above embodiments only represent several implementation manners of the present invention, and their descriptions are relatively specific and detailed, but should not be construed as a limitation on the scope of the patent of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims.

Claims

1. A method for preparing a full-color Micro-LED display device, characterized in that, The method includes: Preparing three kinds of monochromatic Micro-LED chip arrays and a first receiving substrate in sequence, and precisely fixing the three kinds of monochromatic Micro-LED chip arrays at preset positions on the first receiving substrate by means of thermocompression bonding, and removing the substrates of the three kinds of monochromatic Micro-LED chip arrays to complete the transfer integration of the full-color Micro-LED chip array; Adding a strongly adhesive light-transmitting material on the side of the first receiving substrate facing the full-color Micro-LED chip array, preparing a second receiving substrate, and fixing the second receiving substrate on the first receiving substrate through the strongly adhesive light-transmitting material; Removing the first receiving substrate, and the remaining second receiving substrate, the strongly adhesive light-transmitting material, the full-color Micro-LED chip array and the metal bump electrodes on the Micro-LED chips form a pre-bonding module; Performing thermocompression bonding on the metal bump electrodes of the pre-bonding module and the bonding metal bumps of the driving substrate, and accurately fixing the pre-bonding module and the driving substrate by using the strong bonding force between metals to complete the preparation of the full-color Micro-LED display device.

2. The manufacturing method of the full-color Micro-LED display device according to claim 1, wherein: The main material for preparing the first receiving substrate is the same as the main material of the epitaxial substrate in the monochromatic Micro-LED chip array, and the main material of the first receiving substrate is silicon or sapphire.

3. The manufacturing method of the full-color Micro-LED display device according to claim 1, wherein: The first receiving substrate includes a bonding material layer, and the bonding material layer is prepared from any one or a combination of metal materials Ni, Cr, Pt, and Au. The bonding material layer includes a first metal layer and a second metal layer arranged in sequence from top to bottom.

4. The manufacturing method of the full-color Micro-LED display device according to claim 1, wherein: The monochromatic Micro-LED chip array includes red, green, and blue Micro-LED chip arrays, and each Micro-LED chip is provided with the metal bump electrode.

5. The manufacturing method of the full-color Micro-LED display device according to claim 1, characterized in that: The three-color monochromatic Micro-LED chip arrays are sequentially bonded by a bonder in a thermocompression bonding manner to achieve strong bonding between the chip metal bump electrodes and the preset positions on the first receiving substrate, and the substrate material is removed; Realize the precise transfer and fixation of the Micro-LED chip array on the first receiving substrate.

6. The manufacturing method of the full-color Micro-LED display device according to claim 1, characterized in that: The second receiving substrate is a transparent substrate, and the material for preparing the transparent substrate is used in the temperature range of 25 - 400°C and the thermal expansion coefficient difference from silicon is within 10%.

7. The manufacturing method of the full-color Micro-LED display device according to claim 6, wherein: The second receiving substrate is high borosilicate glass.

8. The manufacturing method of the full-color Micro-LED display device according to claim 1, wherein: The strongly adhesive light-transmitting material is a transparent material, and the transparent material has fluidity and adhesiveness at room temperature.

9. The manufacturing method of the full-color Micro-LED display device according to claim 8, characterized in that: The strongly adhesive light-transmitting material is an ultraviolet-curable UV glue, and the ultraviolet-curable UV glue is cured under ultraviolet irradiation.

10. The manufacturing method of the full-color Micro-LED display device according to claim 1, wherein: The bonding temperature between the pre-bonding module and the driving substrate is 50 - 400°C, and the accurate fixation between the pre-bonding module and the driving substrate is completed by using the strong bonding force between metals.

Images