Miniature LED display module, manufacturing method thereof and display equipment

Abstract

The invention discloses a miniature LED display module and a manufacturing method thereof, and a display device, and the method comprises the steps: preparing a plurality of shading assemblies on a miniature LED wafer backboard, preparing a whole-surface film layer on the miniature LED wafer backboard to form a sacrificial layer, and removing the sacrificial layer at the current position of a to-be-set QD layer for each position of the to-be-set QD layer. Coating a non-photosensitive QD material with a corresponding color to form a QD layer with a corresponding color at the current position where the QD is to be set, preparing a packaging layer on the QD layer, and removing the QD layer on the shading assembly to complete definition of the QD layer; removing the sacrificial layer at the corresponding position aiming at the to-be-arranged QD layer position of the other color, then coating the non-photosensitive QD material of the corresponding color, forming the QD layer of the corresponding color at the corresponding position, and arranging a packaging layer on the QD layer; according to the invention, full-color and non-photosensitive QD patterning of the miniature LED single chip can be realized, and the QD layer is thinner, so that the product performance can be improved.

Description

Technical Field

[0001] The present invention relates to the field of micro-display technology, and particularly to a micro-LED display module, a manufacturing method thereof, and a display device. Background Art

[0002] Micro LED (micro light-emitting diode) display technology has been widely used in fields such as wearables and AR due to its advantages of self-luminescence, wide color gamut, high stability, and the ability to achieve high brightness and transparent display. Micro LED is a new generation of display technology, which has higher brightness, better luminous efficiency, and lower power consumption than the existing OLED technology.

[0003] In the field of micro-display, due to the requirements of high PPI (Producer Price Index) and high brightness, the conventional technical route is to bond a CMOS backplane and a MicroLED backplane to achieve individual driving of sub-pixels by a driving circuit. Colorization is the main technical difficulty of the above technical route. Due to factors such as the large technical difficulty of multi-layer stacking and the unstable performance of small-size R sub-pixels, this technology is not yet mature. The industry commonly uses the method of B MicroLED and photosensitive G (Green) & R (Red) QD (Quantum Dot) to achieve colorization. The optical performance of R QD is stable, and the technical difficulty is reduced. However, due to the low solid content of photosensitive QD, a relatively thick QD film (≥2μm) is required to achieve no leakage of B light, which affects the product performance.

[0004] In view of this, how to provide a micro-LED display module, a manufacturing method thereof, and a display device that can improve product performance has become a problem to be solved by those skilled in the art. Summary of the Invention

[0005] The purpose of the embodiments of the present invention is to provide a micro-LED display module, a manufacturing method thereof, and a display device, which can achieve single-chip full colorization of micro-LED and non-photosensitive QD patterning during use, and is beneficial to improving product performance.

[0006] To solve the above technical problems, the embodiments of the present invention provide a manufacturing method of a micro-LED display module, including:

[0007] Preparing a plurality of light-shielding components on a micro-LED wafer backplane, and forming a light-shielding groove between two adjacent light-shielding components; wherein, the micro-LED wafer backplane includes a plurality of first sub-pixel units, and the light-shielding components are located at corresponding positions between two adjacent first sub-pixel units;

[0008] Preparing a film layer on the micro-LED wafer backplane to form a sacrificial layer;

[0009] For the current position of the QD layer to be set, remove the sacrificial layer at the current position of the QD layer to be set, and coat a non-photosensitive QD material of the corresponding color to form a QD layer of the corresponding color at the current position of the QD layer to be set;

[0010] Prepare a packaging layer on the QD layer at the current position of the QD layer to be set, remove the QD layer on the light-shielding component, and use other positions of the QD layer to be set as the current position of the QD layer to be set, and return to execute the step of removing the sacrificial layer at the current position of the QD layer to be set until all QD layers are prepared.

[0011] In one embodiment, the method of using an inorganic material to prepare a film layer on the entire surface of the micro-LED wafer backplane to form a sacrificial layer includes:

[0012] Prepare an amorphous silicon film layer on the entire surface of the micro-LED wafer backplane using amorphous silicon;

[0013] Perform a full-surface grinding on the amorphous silicon film layer, and polish the amorphous silicon film layer to be flush with the light-shielding component to form a sacrificial layer.

[0014] In one embodiment, the method of removing the sacrificial layer at the current position of the QD layer to be set includes:

[0015] Remove the sacrificial layer at the current position of the QD layer to be set by wet etching.

[0016] In one embodiment, the method of preparing a packaging layer on the QD layer at the current position of the QD layer to be set and removing the QD layer on the light-shielding component includes:

[0017] Use a thin-film encapsulation technology to form a film on the entire surface of the current micro-LED wafer backplane;

[0018] Remove the residual non-photosensitive QD material and the packaging film layer on each light-shielding component, and retain the packaging film layer on the QD layer at the current position of the QD layer to be set.

[0019] In one embodiment, the current position of the QD layer to be set is the position of the red QD layer;

[0020] Then, the method of removing the sacrificial layer at the current position of the QD layer to be set and coating a non-photosensitive QD material of the corresponding color to form a QD layer of the corresponding color at the current position of the QD layer to be set includes:

[0021] Remove the sacrificial layer at the position of the red QD layer by wet etching;

[0022] Coat the entire surface of the current micro-LED wafer backplane with a red non-photosensitive QD material to form a red QD layer with a first preset thickness at the position of the red QD layer.

[0023] Or, the current position to be set for the QD layer is the position of the green QD layer;

[0024] Then, removing the sacrificial layer at the current position to be set for the QD layer and coating a non-photosensitive QD material of the corresponding color to form a QD layer of the corresponding color at the current position to be set for the QD layer includes:

[0025] Remove the sacrificial layer at the position of the green QD layer by wet etching;

[0026] Coat the entire surface of the current micro-LED wafer backplane with a green non-photosensitive QD material to form a green QD layer with a second preset thickness at the position of the green QD layer.

[0027] In one embodiment, the first preset thickness and the second preset thickness are less than the height of the light-shielding groove.

[0028] In one embodiment, preparing a plurality of light-shielding components on the micro-LED wafer backplane includes:

[0029] Deposit a high-reflection metal on the entire surface of the micro-LED wafer backplane by PVD film-forming process;

[0030] Remove the metal layer at the position corresponding to each of the first sub-pixel units by photolithography and etching to obtain a plurality of light-shielding components.

[0031] In one embodiment, the light-shielding groove is trapezoidal or square in an inverted shape.

[0032] An embodiment of the present invention further provides a micro-LED display module, including a micro-LED wafer backplane provided with a plurality of preset sub-pixel units and a plurality of pixel light-emitting regions disposed on the micro-LED wafer backplane, each pixel light-emitting region including a first sub-pixel light-emitting region, a second sub-pixel light-emitting region, a third sub-pixel light-emitting region, and a light-shielding component between adjacent sub-pixel light-emitting regions;

[0033] The first sub-pixel light-emitting region is located in a first opening region above the preset sub-pixel unit and includes a first QD layer and a first encapsulation layer stacked in sequence;

[0034] The second sub-pixel light-emitting region is located in a second opening region above the preset sub-pixel unit and includes a second QD layer and a second encapsulation layer stacked in sequence;

[0035] The third sub-pixel light-emitting region is located in a third opening region above the preset sub-pixel unit, and there is no QD layer in the third opening region; wherein, the first encapsulation layer and the second encapsulation layer are discontinuous.

[0036] In one embodiment,

[0037] The first encapsulation layer only covers the first QD layer and part of the side walls of the first opening region;

[0038] The second encapsulation layer only covers the second QD layer and part of the side walls of the second opening region.

[0039] In one embodiment, it further includes a first filling layer disposed on the first encapsulation layer, a second filling layer disposed on the second encapsulation layer, a third filling layer disposed in the third opening region, and a surface encapsulation layer disposed on the first filling layer, the second filling layer, the third filling layer, and each of the light-shielding components.

[0040] In one embodiment, the first opening region, the second opening region, and the third opening region are trapezoidal or square in an inverted shape.

[0041] In one embodiment, the preset sub-pixel unit is a blue sub-pixel unit, the first sub-pixel light-emitting region is a red sub-pixel light-emitting region, and the first QD layer is a red QD layer; the second sub-pixel light-emitting region is a green sub-pixel light-emitting region, and the second QD layer is a green QD layer; the third sub-pixel light-emitting region is a blue sub-pixel light-emitting region;

[0042] Or, the preset sub-pixel unit is a green sub-pixel unit,

[0043] The first sub-pixel light-emitting region is a red sub-pixel light-emitting region, and the first QD layer is a red QD layer; the second sub-pixel light-emitting region is a blue sub-pixel light-emitting region, and the second QD layer is a blue QD layer; the third sub-pixel light-emitting region is a green sub-pixel light-emitting region.

[0044] An embodiment of the present invention further provides a display device, including the micro-LED display module as described above.

[0045] In one embodiment, the display device is a head-mounted display device, and the head-mounted display device further includes an optical element, and the optical element is disposed on the light-emitting path of the micro-LED display module.

[0046] An embodiment of the present invention provides a micro-LED display module, a manufacturing method thereof, and a display device. The manufacturing method includes: preparing a plurality of light-shielding components on a micro-LED wafer backplane, and forming a light-shielding groove between two adjacent light-shielding components; wherein, the micro-LED wafer backplane includes a plurality of first sub-pixel units, and the light-shielding components are located at corresponding positions between two adjacent first sub-pixel units; preparing a film layer on the micro-LED wafer backplane to form a sacrificial layer; for the current position where the QD layer is to be set, removing the sacrificial layer at the current position where the QD layer is to be set, and coating a non-photosensitive QD material of a corresponding color to form a QD layer of the corresponding color at the current position where the QD layer is to be set; preparing a packaging layer on the QD layer at the current position where the QD layer is to be set, removing the QD layer on the light-shielding component, and taking other positions where the QD layer is to be set as the current position where the QD layer is to be set, and returning to execute the step of removing the sacrificial layer at the current position where the QD layer is to be set until all QD layers are prepared.

[0047] It can be seen that in the embodiment of the present invention, by preparing a plurality of light-shielding components on the micro-LED wafer backplane and preparing a film layer on the micro-LED wafer backplane to form a sacrificial layer, and then for each position where the QD layer is to be set, removing the sacrificial layer at the current position where the QD layer is to be set, and then coating the entire surface with a non-photosensitive QD material of the corresponding color, so as to form a QD layer of the corresponding color at the current position where the QD layer is to be set, and then preparing a packaging layer on this QD layer, removing the QD layer on the light-shielding component, completing the definition of one QD layer, and then for the position where the QD layer of another color is to be set, removing the sacrificial layer at the corresponding position, and then coating the entire surface with the non-photosensitive material of the corresponding color, so as to form a QD layer of the corresponding color at the corresponding position, and then preparing a packaging layer on this QD layer; the present invention can realize the full-colorization of a single micro-LED and the patterning of non-photosensitive QD. Since the solid content of non-photosensitive QD is relatively high, blue light leakage can be realized without a relatively thick QD layer, which is beneficial to improving the product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the prior art and the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained according to these drawings.

[0049] Figure 1 It is a schematic flow chart of a manufacturing method of a micro-LED display module provided by an embodiment of the present invention;

[0050] Figure 2 It is a schematic state structure diagram of a micro-LED display module in the manufacturing process provided by an embodiment of the present invention;

[0051] Figure 3 Schematic diagram of the structure of a fabricated micro-LED display module provided by an embodiment of the present invention;

[0052] Figure 4 Schematic diagram of the structure of a micro-LED display module provided by an embodiment of the present invention. Detailed implementation manners

[0053] An embodiment of the present invention provides a micro-LED display module, a manufacturing method thereof, and a display device, which can achieve full-color single-chip of micro-LED and non-photosensitive QD patterning during use, and is beneficial to improving product performance.

[0054] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0055] Please refer to Figure 1 , Figure 1 Schematic flow chart of a manufacturing method of a micro-LED display module provided by an embodiment of the present invention. The manufacturing method of the micro-LED display module includes:

[0056] S110: Prepare a plurality of light-shielding components on a micro-LED wafer backplane, and a light-shielding groove is formed between two adjacent light-shielding components; wherein, the micro-LED wafer backplane includes a plurality of first sub-pixel units, and the light-shielding components are located at corresponding positions between two adjacent first sub-pixel units;

[0057] It should be noted that the micro-LED (i.e., B MicroLED) sub-pixels are predefined and combined with the CMOS backplane to realize pixel circuit driving of individual sub-pixels, thereby obtaining the micro-LED (i.e., B MicroLED) wafer backplane.

[0058] Specifically, since the QD in the embodiment of the present invention uses non-photosensitive QD, after the B MicroLED wafer backplane is fabricated, a plurality of light-shielding components (Bank) need to be prepared on the micro-LED wafer backplane. Each light-shielding component avoids the first sub-pixel unit, and a light-shielding groove is formed between two adjacent light-shielding components for subsequent setting of the corresponding QD layer.

[0059] Furthermore, the process of preparing a plurality of light-shielding components on the micro-LED wafer backplane in S110 may include:

[0060] The high-reflection metal is deposited on the entire surface of the micro-LED wafer backplane by using the PVD (Physical Vapor Deposition) film-forming process;

[0061] The metal layer at the position corresponding to each first sub-pixel unit is removed by using photolithography and etching methods to obtain a plurality of light-shielding components.

[0062] Specifically, on the prepared B Micro-LED backplane, the high-reflection metal (such as Al / Ag, etc.) is deposited on the entire surface by using the PVD film-forming process, and then the metal layer above the first light-emitting sub-pixel is removed by using photolithography and etching methods, and then each light-shielding component bank can be obtained. In addition, in order to be able to well define the QD, the thickness of the metal layer in the embodiments of the present invention can be not less than 3 μm, and the shape of the light-shielding groove (that is, the opening shape of the bank) can be an inverted trapezoid or a square (square or rectangle), such as Figure 2 As shown, the shape between two adjacent banks is an inverted trapezoid, which can be adjusted by the etching process. In practical applications, making the light-shielding groove into an inverted trapezoid is convenient for the process manufacturing, and can also improve the light extraction effect and improve the light extraction waveform.

[0063] S120: A film layer is prepared on the entire surface of the micro-LED wafer backplane to form a sacrificial layer;

[0064] It should be noted that in practical applications, an inorganic material can be used to prepare the sacrificial layer, and the selection of the sacrificial layer material should ensure that the material of the sacrificial layer does not react with the material of the Micro-LED and the metal bank during the subsequent removal of the sacrificial layer.

[0065] Furthermore, amorphous silicon can be used to prepare an amorphous silicon film layer on the entire surface of the micro-LED wafer backplane; then the amorphous silicon film layer is polished on the entire surface, and the amorphous silicon film layer is polished to be level with the light-shielding component to form a sacrificial layer.

[0066] Specifically, a-Si (amorphous silicon) thin film is deposited on the entire surface by using PECVD (Plasma Enhanced Chemical Vapor Deposition), and then CMP is used for polishing on the entire surface to polish the sacrificial layer to be level with the bank. Among them, the thickness of the amorphous silicon film layer can be not less than 5 μm, and the specific thickness can be determined according to actual needs, and the embodiments of the present invention do not make special limitations here.

[0067] S130: For the current position where the QD layer is to be set, the sacrificial layer at the current position where the QD layer is to be set is removed, and the corresponding non-photosensitive QD material is coated to form a QD layer of the corresponding color at the current position where the QD layer is to be set;

[0068] Specifically, for each type of QD layer to be set, the position to be set corresponding to each type of QD layer can be determined first, that is, the position of the QD layer to be set is determined. Batch production can be carried out for each type of QD layer. Specifically, for the current type, the positions of the current QD layers to be set can be determined first, and then the sacrificial layers at the positions of the current QD layers to be set are removed. Specifically, the sacrificial layers at the positions of the current QD layers to be set can be removed by wet etching, and then the non-photosensitive QD material of the corresponding color is coated as a whole, so that QD layers of the corresponding color can be formed at the positions of the current QD layers to be set.

[0069] S140: Prepare an encapsulation layer on the QD layer at the current position of the QD layer to be set, remove the QD layer on the light-shielding component, and use the other positions of the QD layer to be set as the current position of the QD layer to be set. Return to execute the step of removing the sacrificial layer at the current position of the QD layer to be set until all QD layers are prepared.

[0070] Specifically, after QD layers of the corresponding color are set at each current position of the QD layer to be set, an encapsulation layer is prepared on each QD layer respectively, and the QD layer on the light-shielding component is removed, so as to ensure that the encapsulation layers on each QD layer are discontinuous. That is, an encapsulation layer corresponding to it is prepared on one QD layer to protect the QD layer. After the encapsulation layer is prepared, the preparation of the QD layer of the next type can be carried out. Specifically, for another type of QD layer, the corresponding position of the QD layer to be set is determined as the current position of the QD layer to be set, and then the sacrificial layers at the positions of the current QD layers to be set are removed. Specifically, the sacrificial layers at the positions of the current QD layers to be set can be removed by wet etching, and then the non-photosensitive QD material of the corresponding color is coated as a whole, so that QD layers of the corresponding color can be formed at the positions of the current QD layers to be set; after QD layers of the corresponding color are set at each current position of the QD layer to be set, an encapsulation layer is prepared on each QD layer respectively, that is, an encapsulation layer corresponding to it is prepared on one QD layer to protect the QD layer, so as to complete the preparation of the QD layers at each position of the QD layer to be set. Of course, after the preparation of each type of QD layer is completed, the QD layer or other substances remaining on the light-shielding component Bank also need to be removed.

[0071] In addition, after all QD layers are prepared and the residues on the Bank are removed, a whole-surface encapsulation layer can also be made on the entire backplane to improve the encapsulation effect.

[0072] In one embodiment, preparing an encapsulation layer on the QD layer at the current position of the QD layer to be set and removing the QD layer on the light-shielding component includes:

[0073] Form a film on the entire surface of the current micro-LED wafer backplane by using a thin-film encapsulation technology;

[0074] Remove the residual non-photosensitive QD material and encapsulation film layer on each light-shielding component, and retain the encapsulation film layer on the QD layer at the position where the current QD layer is to be set.

[0075] It should be noted that when preparing the encapsulation layer, a thin-film encapsulation technology can be used to form a continuous film on the entire surface of the current micro-LED wafer backplane to form an encapsulation film layer. Then, in order to make the encapsulation film layers on each QD layer discontinuous, the residual non-photosensitive QD material and encapsulation film layer on each light-shielding component can be removed, and the encapsulation film layer on the QD layer at the position where the current QD layer is to be set is retained. Specifically, the retained encapsulation layer can cover the QD layer at the corresponding position and part of the sidewalls of the light-shielding groove.

[0076] In one embodiment, the position where the current QD layer is to be set is the position of the red QD layer;

[0077] Then, remove the sacrificial layer at the position where the current QD layer is to be set, and coat the non-photosensitive QD material of the corresponding color to form a QD layer of the corresponding color at the position where the current QD layer is to be set, including:

[0078] Remove the sacrificial layer at the position of the red QD layer by wet etching;

[0079] Coat the red non-photosensitive QD material over the entire surface of the current micro-LED wafer backplane so as to form a red QD layer with a first preset thickness at the position of the red QD layer.

[0080] Or, the position where the current QD layer is to be set is the position of the green QD layer;

[0081] Then, remove the sacrificial layer at the position where the current QD layer is to be set, and coat the non-photosensitive QD material of the corresponding color to form a QD layer of the corresponding color at the position where the current QD layer is to be set, including:

[0082] Remove the sacrificial layer at the position of the green QD layer by wet etching;

[0083] Coat the green non-photosensitive QD material over the entire surface of the current micro-LED wafer backplane so as to form a green QD layer with a second preset thickness at the position of the green QD layer.

[0084] Specifically, taking the example of preparing the red QD layer first and then the green QD layer for detailed description:

[0085] First, determine the position to be set corresponding to the R (red) QD layer, that is, determine the position of the red QD layer. Then, use wet etching to remove the sacrificial layer at each position of the red QD layer, and then coat the R non-photosensitive QD material as a whole, so that an R-QD layer can be formed at each position of the red QD layer. Among them, the thickness of the R-QD layer is the first preset thickness, and the first preset thickness is less than the height of the light-shielding component Bank. Its specific value can be determined according to actual needs, and the embodiments of the present invention do not make special limitations on this.

[0086] Specifically, after preparing each R-QD layer, a whole-surface film of AlO + SiO can be formed in the TFE (thin film encapsulation) structure, and CMP is used to remove AlO + SiO and R-QD on the Bank, completing the pixel definition of the R-QD. An encapsulation layer is formed on each R-QD layer to protect the R-QD in the light-shielding groove, as specifically Figure 2 shown.

[0087] Then, prepare the G-QD layer. Specifically, determine the position of the green G-QD layer, then use wet etching to remove the sacrificial layer at each position of the green QD layer, and then coat the G non-photosensitive QD material as a whole, so that a G-QD layer can be formed at each position of the green QD layer. Among them, the thickness of the G-QD layer is the second preset thickness, and the second preset thickness is less than the height of the light-shielding component Bank. Its specific value can be determined according to actual needs, and the embodiments of the present invention do not make special limitations on this. Since an independent encapsulation layer has been made on the previously prepared R-QD layer, when the G non-photosensitive QD material is coated again, the G non-photosensitive QD material will not affect the R-QD layer, and the G non-photosensitive QD material on the R-QD layer can be directly removed later.

[0088] Specifically, after preparing each G-QD layer, a whole-surface film of AlO + SiO can be formed in the TFE (thin film encapsulation) structure, and CMP is used to remove AlO + SiO and G-QD on the Bank and other R-QD layers, completing the pixel definition of the G-QD. Encapsulation layers are respectively formed on each G-QD layer to protect the G-QD in the light-shielding groove. Specifically, after preparing each G-QD layer, remove the sacrificial layer at other positions. At this time, the light-shielding grooves on the first sub-pixel units at other positions are empty, so that blue light can be emitted. Then, in order to further improve the encapsulation effect, corresponding filling layers can also be set on each encapsulation layer, and corresponding filling layers are also set on the first sub-pixel units where the QD layer is not set. Then, a surface encapsulation layer is prepared as a whole on each filling layer and each Bank. The prepared structure diagram is as Figure 3 shown. Thus, the patterning of non-photosensitive QD is realized, and the single-chip full colorization of micro-LED is realized.

[0089] It can be seen that in the embodiments of the present invention, multiple light-shielding components are prepared on the backplane of the micro-LED wafer, and an entire surface film layer is prepared on the backplane of the micro-LED wafer using an inorganic material to form a sacrificial layer. Then, for each position where the QD layer is to be set, the sacrificial layer at the current position where the QD layer is to be set is removed, and then a non-photosensitive QD material of the corresponding color is coated on the entire surface, so as to form a QD layer of the corresponding color at the current position where the QD layer is to be set. Then, a packaging layer is prepared on this QD layer to complete the definition of one QD layer. Then, for the position where the QD layer of another color is to be set, after removing the sacrificial layer at the corresponding position, a non-photosensitive material of the corresponding color is coated on the entire surface, so as to form a QD layer of the corresponding color at the corresponding position, and then a packaging layer is prepared on this QD layer; the present invention can realize the full-colorization of a single micro-LED and the patterning of non-photosensitive QDs. Since the solid content of the non-photosensitive QDs is relatively high, blue light leakage can be achieved without a relatively thick QD layer, which is beneficial to improving the product performance.

[0090] Based on the above embodiments, the embodiments of the present invention further provide a micro-LED display module, specifically as Figure 4 shown. The display module includes a micro-LED wafer backplane 1 provided with a plurality of preset sub-pixel units A and a plurality of pixel light-emitting regions arranged on the micro-LED wafer backplane 1. Each pixel light-emitting region includes a first sub-pixel light-emitting region H, a second sub-pixel light-emitting region I, a third sub-pixel light-emitting region J, and a light-shielding component 2 between adjacent sub-pixel light-emitting regions;

[0091] The first sub-pixel light-emitting region H is located in a first opening region above the preset sub-pixel unit A and includes a first QD layer 3 and a first packaging layer 31 stacked in sequence;

[0092] The second sub-pixel light-emitting region I is located in a second opening region above the preset sub-pixel unit A and includes a second QD layer 4 and a second packaging layer 41 stacked in sequence;

[0093] The third sub-pixel light-emitting region J is located in a third opening region above the preset sub-pixel unit, and there is no QD layer in the third opening region; among them, the first packaging layer 31 and the second packaging layer 41 are not continuous.

[0094] It should be noted that the micro-LED wafer backplane 1 in the embodiments of the present invention is provided with a plurality of preset sub-pixel units A, and a plurality of pixel light-emitting regions are arranged on the micro-LED wafer backplane 1. For example, it includes a plurality of RGB pixel light-emitting regions. The embodiments of the present invention take one pixel light-emitting region as an example for detailed description. For details, see Figure 4 , this pixel light-emitting region includes a first sub-pixel light-emitting region H, a second sub-pixel light-emitting region I, a third sub-pixel light-emitting region J, and a light-shielding component 2 arranged between every two adjacent sub-pixel light-emitting regions (that is Figure 4(in the Bank). The first sub-pixel light-emitting region H is located in the first opening region above the preset sub-pixel unit A. The first sub-pixel light-emitting region H includes a first QD layer 3 and a first encapsulation layer 31 stacked in sequence; the second sub-pixel light-emitting region I is located in the second opening region above the preset sub-pixel unit A. The second sub-pixel light-emitting region I includes a second QD layer 4 and a second encapsulation layer 41 stacked in sequence; the third sub-pixel light-emitting region J is located in the third opening region above the preset sub-pixel unit, and there is no QD layer in this third opening region. Therefore, the light emitted by the corresponding preset sub-pixel unit A on the micro-LED wafer backplane 1 can be directly emitted. In the embodiment of the present invention, the first encapsulation layer 31 and the second encapsulation layer 41 are discontinuous, which can buffer stress, reduce the wear thickness, and increase the light output.

[0095] In one embodiment, please refer to Figure 4 , in the embodiment of the present invention, in order to improve the encapsulation effect, the first encapsulation layer 31 only covers the first QD layer 3 and part of the side walls of the first opening region; the second encapsulation layer 41 only covers the second QD layer 4 and part of the side walls of the second opening region.

[0096] In one embodiment, in order to further improve the encapsulation effect, the micro-LED display module may further include a first filling layer 32 disposed on the first encapsulation layer 31, a second filling layer 42 disposed on the second encapsulation layer 41, a third filling layer 5 disposed in the third opening region, and a surface encapsulation layer 6 disposed on the first filling layer 32, the second filling layer 42, the third filling layer 5, and each light-shielding component 2.

[0097] In one embodiment, in order to reduce the manufacturing difficulty, the shapes of the first opening region, the second opening region, and the third opening region in the embodiment of the present invention may be inverted trapezoids or squares, and using inverted trapezoids or squares can also improve the light output effect and improve the light output waveform.

[0098] In one embodiment, in actual applications, the pixel light-emitting region needs to achieve RGB light. Therefore, the preset sub-pixel unit A in the embodiment of the present invention may be a blue sub-pixel unit, and the corresponding first sub-pixel light-emitting region H is a red sub-pixel light-emitting region, and the first QD layer 3 is a red QD layer; the second sub-pixel light-emitting region I is a green sub-pixel light-emitting region, and the second QD layer 4 is a green QD layer; the third sub-pixel light-emitting region J is a blue sub-pixel light-emitting region;

[0099] Or, the preset sub-pixel unit A may also be a green sub-pixel unit, and the corresponding first sub-pixel light-emitting region H is a red sub-pixel light-emitting region, and the first QD layer 3 is a red QD layer; the second sub-pixel light-emitting region I is a blue sub-pixel light-emitting region, and the second QD layer 4 is a blue QD layer; the third sub-pixel light-emitting region J is a green sub-pixel light-emitting region.

[0100] It should be noted that the first encapsulation layer 31, the second encapsulation 41, and the surface encapsulation layer 6 in the embodiments of the present invention can all be prepared from alumina. Of course, they can also be prepared from other materials, and the present invention does not make special limitations in this regard.

[0101] The embodiments of the present invention can achieve full-color single-chip of micro-LEDs and non-photosensitive QD patterning. Since the solid content of non-photosensitive QDs is relatively high, blue light leakage can be achieved without a relatively thick QD layer, which is beneficial to improving product performance.

[0102] On the basis of the above embodiments, the embodiments of the present invention further provide a display device, including the micro-LED display module as described above.

[0103] Specifically, the display device can be a head-mounted display device or other wearable devices. The head-mounted display device can further include optical elements, and the optical elements are arranged on the light-emitting path of the micro-LED display module.

[0104] In this specification, the various embodiments are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts among the various embodiments can be referred to each other. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple, and the relevant parts can be referred to the description of the method part.

[0105] It should also be noted that in this specification, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.

[0106] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A manufacturing method of a micro-LED display module, characterized in that, Including: Preparing a plurality of light-shielding components on a micro-LED wafer backplane, and forming a light-shielding groove between two adjacent light-shielding components; wherein, the micro-LED wafer backplane includes a plurality of first sub-pixel units, and the light-shielding components are located at corresponding positions between two adjacent first sub-pixel units; Preparing a film layer on the micro-LED wafer backplane to form a sacrificial layer; For the current position where the QD layer is to be set, removing the sacrificial layer at the current position where the QD layer is to be set, and coating a non-photosensitive QD material of a corresponding color to form a QD layer of the corresponding color at the current position where the QD layer is to be set; Preparing a packaging layer on the QD layer at the current position where the QD layer is to be set, removing the QD layer on the light-shielding component, and taking other positions where the QD layer is to be set as the current position where the QD layer is to be set, and returning to execute the step of removing the sacrificial layer at the current position where the QD layer is to be set until all QD layers are prepared.

2. The manufacturing method of the micro-LED display module according to claim 1, wherein, The step of preparing a film layer on the entire surface of the micro-LED wafer backplane with an inorganic material to form a sacrificial layer includes: Preparing an amorphous silicon film layer on the entire surface of the micro-LED wafer backplane with amorphous silicon; Performing planar grinding on the amorphous silicon film layer, and polishing the amorphous silicon film layer to be level with the light-shielding component to form a sacrificial layer.

3. The manufacturing method of the micro-LED display module according to claim 1, wherein, The step of removing the sacrificial layer at the current position where the QD layer is to be set includes: Removing the sacrificial layer at the current position where the QD layer is to be set by means of wet etching.

4. The manufacturing method of the micro-LED display module according to claim 1, wherein, The step of preparing a packaging layer on the QD layer at the current position where the QD layer is to be set and removing the QD layer on the light-shielding component includes: Forming a film on the entire surface of the current micro-LED wafer backplane by means of thin-film encapsulation technology; Removing the residual non-photosensitive QD material and the packaging film layer on each light-shielding component, and retaining the packaging film layer on the QD layer at the current position where the QD layer is to be set.

5. The manufacturing method of the micro-LED display module according to any one of claims 1 to 4, characterized in that, The current position where the QD layer is to be set is the position of the red QD layer; Then, the step of removing the sacrificial layer at the current position where the QD layer is to be set and coating a non-photosensitive QD material of a corresponding color to form a QD layer of the corresponding color at the current position where the QD layer is to be set includes: Removing the sacrificial layer at the position of the red QD layer by means of wet etching; Coating the red non-photosensitive QD material on the entire surface of the current micro-LED wafer backplane so as to form a red QD layer with a first preset thickness at the position of the red QD layer. Or, the current position where the QD layer is to be set is the position of the green QD layer; Then, the step of removing the sacrificial layer at the current position where the QD layer is to be set and coating a non-photosensitive QD material of a corresponding color to form a QD layer of the corresponding color at the current position where the QD layer is to be set includes: Removing the sacrificial layer at the position of the green QD layer by means of wet etching; Coating the green non-photosensitive QD material on the entire surface of the current micro-LED wafer backplane so as to form a green QD layer with a second preset thickness at the position of the green QD layer.

6. The manufacturing method of the micro-LED display module according to claim 5, wherein, The first preset thickness and the second preset thickness are less than the height of the light-shielding groove.

7. The manufacturing method of the micro-LED display module according to claim 1, characterized in that The step of preparing a plurality of light-shielding components on the micro-LED wafer backplane includes: The high-reflection metal is deposited on the entire backplane of the micro-LED wafer by using a PVD film-forming process; The metal layer at the position corresponding to each of the first sub-pixel units is removed by using photolithography and etching to obtain a plurality of light-shielding components.

8. The manufacturing method of the micro-LED display module according to claim 1, wherein, The light-shielding groove is trapezoidal or square in an inverted shape.

9. A micro-LED display module, characterized in that, It includes a micro-LED wafer backplane provided with a plurality of preset sub-pixel units and a plurality of pixel light-emitting regions arranged on the micro-LED wafer backplane. Each pixel light-emitting region includes a first sub-pixel light-emitting region, a second sub-pixel light-emitting region, a third sub-pixel light-emitting region, and a light-shielding component between adjacent sub-pixel light-emitting regions; The first sub-pixel light-emitting region is located in a first opening region above the preset sub-pixel unit and includes a first QD layer and a first encapsulation layer stacked in sequence; The second sub-pixel light-emitting region is located in a second opening region above the preset sub-pixel unit and includes a second QD layer and a second encapsulation layer stacked in sequence; The third sub-pixel light-emitting region is located in a third opening region above the preset sub-pixel unit, and there is no QD layer in the third opening region; wherein, the first encapsulation layer and the second encapsulation layer are discontinuous.

10. The micro-LED display module according to claim 9, wherein The first encapsulation layer only covers the first QD layer and part of the side walls of the first opening region; The second encapsulation layer only covers the second QD layer and part of the side walls of the second opening region.

11. The micro-LED display module according to claim 9, wherein, It further includes a first filling layer provided on the first encapsulation layer, a second filling layer provided on the second encapsulation layer, a third filling layer provided in the third opening region, and a surface encapsulation layer provided on the first filling layer, the second filling layer, the third filling layer, and each of the light-shielding components.

12. The micro-LED display module according to claim 9, wherein, The first opening region, the second opening region, and the third opening region are trapezoidal or square in an inverted shape.

13. The micro-LED display module according to any one of claims 9-12, characterized in that, The preset sub-pixel unit is a blue sub-pixel unit, The first sub-pixel light-emitting region is a red sub-pixel light-emitting region, and the first QD layer is a red QD layer; the second sub-pixel light-emitting region is a green sub-pixel light-emitting region, and the second QD layer is a green QD layer; the third sub-pixel light-emitting region is a blue sub-pixel light-emitting region; Or, the preset sub-pixel unit is a green sub-pixel unit, The first sub-pixel light-emitting region is a red sub-pixel light-emitting region, and the first QD layer is a red QD layer; the second sub-pixel light-emitting region is a blue sub-pixel light-emitting region, and the second QD layer is a blue QD layer; the third sub-pixel light-emitting region is a green sub-pixel light-emitting region.

14. A display device, characterized in that, It includes the micro-LED display module according to any one of claims 9 to 13.

15. The display device according to claim 14, wherein The display device is a head-mounted display device, and the head-mounted display device further includes an optical element, and the optical element is arranged on the light-emitting path of the micro-LED display module.

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