Color film substrate, manufacturing method thereof and display device

Abstract

The invention provides a color film substrate, a manufacturing method thereof and a display device.The color film substrate comprises a substrate body, a color resistance layer located on the substrate body, a flat layer wrapping the color resistance layer and a spacer layer located on the side, away from the substrate body, of the flat layer; wherein the spacer layer comprises a shielding structure formed by sequentially stacking a plurality of film layers; a supporting structure is arranged at a part of the position of one side, deviating from the substrate, of the shielding structure, a first spacer is formed by the overlapping part of the supporting structure and the shielding structure, and a second spacer is formed by the other part, except the overlapping part, of the shielding structure.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and particularly to a color film substrate, a manufacturing method thereof, and a display device. Background Art

[0002] With the rise of the metaverse concept, virtual reality (VR) headset products, as port devices, have attracted much attention. Currently, display products with good effects on the market are usually micro organic light-emitting diode (Micro OLED) products with 3000+ PPI (Pixels Per Inch). However, Micro OLED products have high costs and great process difficulties, making it difficult to popularize. The glass-based ultra-high PPI technology is expected to produce products with 2000-3000 PPI, and at the same time, the cost is only one-tenth of that of silicon-based OLED products, which is very attractive. Therefore, developing ultra-high PPI glass-based VR headsets has great market potential.

[0003] In order to achieve a high PPI design, the size of the black matrix (BM) on the color film (CF) substrate can be reduced to ensure the transmittance after alignment. However, since the BM needs to effectively block the post spacers (PS), the size of the BM cannot be made small enough in actual manufacturing processes, which reduces the device brightness and sacrifices the aperture ratio. Summary of the Invention

[0004] The present invention provides a color film substrate, a manufacturing method thereof, and a display device, which are used to maximize the aperture ratio.

[0005] In a first aspect, an embodiment of the present invention provides a color film substrate, including:

[0006] A substrate, a color resist layer located on the substrate, a planarization layer covering the color resist layer, and a spacer layer located on the side of the planarization layer away from the substrate;

[0007] Wherein, the spacer layer includes a shielding structure formed by sequentially stacking multiple film layers; a support structure is provided at a partial position on the side of the shielding structure away from the substrate, and the overlapping part of the support structure and the shielding structure constitutes a first spacer, and the remaining part of the shielding structure except the overlapping part constitutes a second spacer.

[0008] In a possible implementation manner, the shielding structure includes an absorbent layer, a dielectric layer, and a reflective layer sequentially arranged in a direction away from the substrate, and the absorbent layer, the dielectric layer, and the reflective layer are flush-mounted.

[0009] In a possible implementation, an etch stop layer is further included between the shielding structure and the flat layer, and the etch stop layer is disposed on a side of the flat layer away from the substrate.

[0010] In a possible implementation, the first spacer further includes a mask layer on a side of the support structure away from the substrate, a positive projection of the support structure on the substrate completely falls within a region range of a positive projection of the mask layer on the substrate, and a positive projection of the mask layer on the substrate completely falls within a region range of a positive projection of the corresponding shielding structure on the substrate.

[0011] In a possible implementation, the shielding structure includes a plurality of first branches extending in a first direction, and a positive projection of the support structure on the substrate completely falls within a region range of a positive projection of the corresponding first branch on the substrate.

[0012] In a possible implementation, the shielding structure further includes a plurality of second branches extending in a second direction intersecting with the first direction, the plurality of first branches and the plurality of second branches intersect to enclose a mesh structure including a plurality of mesh holes, and a positive projection of each mesh hole on the substrate completely falls within a region range of a positive projection of the color resist layer on the substrate.

[0013] In a possible implementation, the color resist layer includes color resist blocks of a plurality of different colors, the color resist blocks in adjacent rows are staggered, and a positive projection of the support structure on the substrate partially overlaps with positive projections of adjacent color resist blocks of various colors on the substrate.

[0014] In a possible implementation, along a second direction intersecting with the first direction, an extension length of the first branch at a corresponding position of the support structure satisfies the relationship: b = a + 2d, where b represents an extension length of the first branch at the corresponding position of the support structure along the second direction, a represents an extension length of the support structure along the second direction, and d represents a distance between an outer edge of the support structure and an outer edge of the corresponding first branch.

[0015] In a possible implementation, along a direction perpendicular to a plane where the substrate is located, an extension length of the support structure and the mask layer satisfies the relationship: 0.8d < h < 1.5d, where h represents an extension length of the support structure and the mask layer along a direction perpendicular to the plane where the substrate is located.

[0016] In one possible implementation, along the second direction, the extension length of the branches among the multiple first branches except the corresponding positions of the support structure satisfies the relationship: c<2d, where c represents the extension length of the branches among the multiple first branches except the corresponding positions of the support structure along the second direction.

[0017] In a possible implementation manner, the extension length of the shortest side of the support structure satisfies the relationship: l≤b-2d, where l represents the extension length of the shortest side of the support structure.

[0018] In a possible implementation manner, a black matrix is further included in the peripheral area, wherein the black matrix is located between the substrate and the planar layer, and the black matrix is arranged around the color resist layer.

[0019] In a second aspect, an embodiment of the present invention further provides a display device, including:

[0020] A color filter substrate as described in any one of the above items, a display substrate arranged opposite to the color filter substrate, and a liquid crystal layer located between the color filter substrate and the display substrate.

[0021] In a possible implementation, the display substrate includes a base, and spacers located on the base and respectively arranged corresponding to the first spacer and the second spacer; wherein the spacer is arranged in contact with the corresponding first spacer, the spacer and the corresponding second spacer are arranged at a preset distance, and the orthographic projection of the spacer on the base overlaps with the orthographic projection of the corresponding second spacer on the base.

[0022] In a third aspect, an embodiment of the present invention further provides a method for manufacturing a color filter substrate, comprising:

[0023] forming a color resist layer and a planar layer covering the color resist layer on a substrate in sequence;

[0024] stacking a plurality of film layers in sequence on a side of the flat layer away from the substrate to form a pattern of a shielding structure;

[0025] A support structure pattern is formed at a portion of the shielding structure away from the substrate to obtain a first spacer consisting of the overlapping portion of the support structure and the shielding structure, and a second spacer consisting of the remaining portion of the shielding structure except the overlapping portion.

[0026] In a possible implementation manner, a plurality of film layers are sequentially stacked on a side of the flat layer facing away from the substrate to form a pattern of a shielding structure, including:

[0027] On the side of the flat layer facing away from the substrate, an etch stop layer, a light-absorbing layer, a dielectric layer, a reflective layer, a spacer layer, and a mask layer are sequentially deposited.

[0028] The light-absorbing layer, the dielectric layer, the reflective layer, the spacer layer, and the mask layer are patterned to form a pattern including an occlusion structure.

[0029] In a possible implementation, on the side of a partial position of the occlusion structure facing away from the substrate, a pattern of a support structure is formed, including:

[0030] Using a secondary ashing etch process, on the side of a partial position of the occlusion structure facing away from the substrate, a pattern of a support structure is formed to obtain a first spacer formed by an overlapping portion of the support structure and the occlusion structure.

[0031] On the side of the remaining positions of the occlusion structure except for the partial position facing away from the substrate, the corresponding support structure and a partial portion of the mask layer are etched away, and in the remaining positions, a second spacer formed by the remaining portion of the occlusion structure except for the overlapping portion is obtained.

[0032] The beneficial effects of the present invention are as follows:

[0033] The embodiments of the present invention provide a color filter substrate, a manufacturing method thereof, and a display device. Among them, the color filter substrate includes a substrate, a color resist layer located on the substrate, a flat layer covering the color resist layer, and a spacer layer located on the side of the flat layer facing away from the substrate; wherein, the spacer layer includes an occlusion structure formed by sequentially stacking a plurality of film layers, and a support structure is provided at a partial position on the side of the occlusion structure facing away from the substrate. An overlapping portion of the support structure and the occlusion structure forms a first spacer, and the remaining portion of the occlusion structure except for the overlapping portion forms a second spacer. That is to say, for the first spacer, its support structure is arranged on the side of the occlusion structure facing away from the substrate. In this way, under the same occlusion effect of the occlusion structure on the support structure, the size of the occlusion structure can be effectively reduced, thereby providing the possibility to maximize the aperture ratio. Moreover, the first spacer also has a support structure compared with the second spacer, thus taking into account the support strength of the first spacer. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a partial top view structural schematic diagram of a color filter cover plate in the related art;

[0035] Figure 2 For Figure 1 a partial cross-sectional structural schematic diagram of the color filter cover plate in

[0036] Figure 3 It is a partial top view structural schematic diagram of a color filter substrate provided by an embodiment of the present invention;

[0037] Figure 4 One of the schematic cross-sectional structure diagrams along the Figure 3 direction shown by MM in the figure;

[0038] Figure 5 One of the schematic cross-sectional structure diagrams along the Figure 3 direction shown by MM in the figure;

[0039] Figure 6 One of the schematic cross-sectional structure diagrams along the Figure 3 direction shown by MM in the figure;

[0040] Figure 7 One of the schematic top views of the color filter substrate provided by the embodiment of the present invention;

[0041] Figure 8 One of the schematic top views of the color filter substrate provided by the embodiment of the present invention;

[0042] Figure 9 One of the schematic cross-sectional structure diagrams of the color filter substrate provided by the embodiment of the present invention;

[0043] Figure 10 One of the schematic structure diagrams of a display device provided by the embodiment of the present invention;

[0044] Figure 11 The method flow chart of a manufacturing method of a color filter substrate provided by the embodiment of the present invention;

[0045] Figure 12 For Figure 11 One of the method flow charts of step S102 in the figure;

[0046] Figure 13 For Figure 11 One of the method flow charts of step S103 in the figure;

[0047] Figure 14 For Figure 9 The process flow chart of the color filter substrate shown in the figure;

[0048] Figure 15 For Figure 14 Partial schematic structure diagram of the secondary ashing etching in the figure. Detailed implementation manners

[0049] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. And, without conflict, the embodiments in the present invention and the features in the embodiments may be combined with each other. All other embodiments obtained by those of ordinary skill in the art based on the described embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0050] Unless otherwise defined, the technical terms or scientific terms used in the present invention shall have the ordinary meanings as understood by those of ordinary skill in the art to which the present invention pertains. The "first", "second", and similar terms used in the present invention do not denote any order, quantity, or importance, but are only used to distinguish different components. The terms such as "include" or "comprise" mean that the elements or items appearing before this term cover the elements or items listed after this term and their equivalents, without excluding other elements or items. The terms such as "connect" or "couple" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "inner", "outer", "upper", and "lower" are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0051] It should be noted that the sizes and shapes of the various figures in the drawings do not reflect the true proportions, and the purpose is only to schematically illustrate the content of the present invention. And, the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions throughout.

[0052] In the related art, a color filter cover plate design such as Figure 1 and Figure 2 is often adopted. Among them, Figure 1 is a partial top view structural schematic diagram of the color filter cover plate, Figure 2 is Figure 1 a partial cross-sectional structural schematic diagram of the color filter cover plate in

[0053] In practical applications, when the display product reaches more than 2000PPI, in order to improve the transmittance of the display product, in addition to developing a high aperture ratio backplane process, the transmittance after box alignment can also be improved by reducing the color resistance and black matrix size in the color film, especially the size of the spacer. However, the presence of the spacer will cause the alignment layer to accumulate around it, resulting in a disordered liquid crystal orientation, and an additional black matrix is required to effectively block it. In this case, since the black matrix needs to effectively block the spacer, the size of the BM cannot be made small enough in the actual preparation process, and the size of the BM is often large. After it is subsequently aligned with the corresponding display substrate, the brightness of the device is reduced and the aperture ratio is sacrificed.

[0054] In view of this, an embodiment of the present invention provides a color filter substrate, a manufacturing method thereof, and a display device, which are used to maximize the aperture ratio.

[0055] like Figure 3 and Figure 4 As shown, Figure 3 A schematic diagram of a top view of a color film substrate provided in an embodiment of the present invention. Figure 4 For along Figure 3 A schematic diagram of a cross-sectional structure in the direction indicated by MM in FIG. Specifically, the color filter substrate includes:

[0056] A substrate 10, a color resist layer 20 located on the substrate 10, a planar layer 30 covering the color resist layer 20, and a spacer layer 40 located on a side of the planar layer 30 away from the substrate 10;

[0057] Among them, the spacer layer 40 includes a shielding structure 50 formed by stacking multiple film layers in sequence; a support structure 60 is arranged at a partial position on the side of the shielding structure 50 facing away from the substrate 10, and the overlapping part of the support structure 60 and the shielding structure 50 constitutes a first spacer 41, and the remaining part of the shielding structure 50 except the overlapping part constitutes a second spacer 42.

[0058] In the specific implementation process, the color filter substrate provided by the embodiment of the present invention includes a substrate 10, which can be a rigid substrate. For example, the material corresponding to the substrate 10 can be glass or silicon, which is not limited here. In addition, the substrate 10 can also be a flexible substrate. Of course, the specific material of the substrate 10 can also be set according to the actual application needs, which is not limited here.

[0059] Moreover, the color filter substrate further includes a color resist layer 20 located on the substrate 10, a planarization layer 30 covering the color resist layer 20, and a spacer layer 40 located on the side of the planarization layer 30 away from the substrate 10. Exemplarily, the color resist layer 20 includes color resist blocks 21 of various different colors, such as red color resist blocks 21, green color resist blocks 21, and blue color resist blocks 21, thus ensuring the color display of the color filter substrate. Exemplarily, the material of the planarization layer 30 can be an organic acrylic material, and the thickness range of the planarization layer 30 can be 0.4 μm to 1.5 μm.

[0060] In addition, the spacer layer 40 includes a shielding structure 50 formed by sequentially stacking a plurality of film layers, that is to say, the shielding structure 50 is actually a stacked structure formed by stacking a plurality of film layers. Among them, a support structure 60 is provided at a partial position on the side of the shielding structure 50 away from the substrate 10. Exemplarily, the support structure 60 is a spacer layer 204 made of an organic material; the thickness range of the support structure 60 is 1.0 μm to 2.0 μm. Additionally, the overlapping portion of the support structure 60 and the shielding structure 50 constitutes a first spacer 41, and the remaining portion of the shielding structure 50 except the overlapping portion constitutes a second spacer 42. That is to say, for the first spacer 41, its support structure 60 is provided on the side of the shielding structure 50 away from the substrate 10. In this way, under the same shielding effect of the shielding structure 50 on the support structure 60, the size of the shielding structure 50 can be effectively reduced, thus providing the possibility to maximize the aperture ratio. Moreover, the first spacer 41 also has a support structure 60 compared with the second spacer 42, thus taking into account the support strength of the first spacer 41.

[0061] In the specific implementation process, after the color filter substrate and the display substrate 200 are paired to form a liquid crystal cell, the liquid crystal cell can be supported by the first spacer 41 first; when the liquid crystal cell is compressed due to external force extrusion or temperature change and other factors, the second spacer 42 can be used to assist in supporting the liquid crystal cell, thus ensuring the support ability of the spacer layer 40 and being beneficial to maintaining the uniformity of the cell thickness.

[0062] It should be noted that in the specific implementation process, the number of the support structures 60 can be one or multiple. Of course, the number of the support structures 60 can be set according to actual application needs and is not limited herein. Correspondingly, the first spacer 41 can be one or multiple.

[0063] In the implementation process of the present invention, as Figure 5 shown, the shielding structure 50 includes an absorbing layer 51, a dielectric layer 52, and a reflective layer 53 that are sequentially arranged in a direction away from the substrate 10, and the absorbing layer 51, the dielectric layer 52, and the reflective layer 53 are flush-mounted.

[0064] InFigure 5 In the exemplary embodiment shown, the light-shielding structure 50 includes a light-absorbing layer 51, a dielectric layer 52, and a reflective layer 53. The light-absorbing layer 51, the dielectric layer 52, and the reflective layer 53 are sequentially arranged in a direction away from the substrate 10. Exemplarily, the light-absorbing layer 51 can be a metal material with light-absorbing properties such as Mo, W, MoO, etc. The thickness range of the light-absorbing layer 51 can be 1 nm to 10 nm. Exemplarily, the dielectric layer 52 can be an inorganic material, such as SiN. The thickness range of the dielectric layer 52 can be 30 nm to 100 nm. Exemplarily, the material of the reflective layer 53 can be a metal material with light-shielding properties. The thickness range of the reflective layer 53 can be 50 nm to 150 nm. In addition, the light-absorbing layer 51, the dielectric layer 52, and the reflective layer 53 are flush along the thickness direction, and in the actual manufacturing process, they can be prepared by the same mask process, thereby improving the manufacturing efficiency of the light-shielding structure 50.

[0065] In practical applications, the light-shielding structure 50 formed by stacking the light-absorbing layer 51, the dielectric layer 52, and the reflective layer 53 can reduce the reflectivity of the metal while ensuring the transmittance of the opening area, achieving the same reflectivity as the black matrix 90 made of organic materials. For example, the reflectivity R is less than 8%. In this way, the light-shielding structure 50 in the embodiment of the present invention can achieve the same light-shielding effect as the black matrix 90, and thus can effectively replace the black matrix 90. In addition, in practical applications, since the size of the metal line width can be made smaller, for example, the line width can be made less than 1.5 μm, while under the premise of the same light-shielding effect, the line width of the black matrix 90 in the related art is usually greater than 2.0 μm; correspondingly, the line width of the light-shielding structure 50 prepared based on metal materials in the embodiment of the present invention can be made smaller, and the thickness can be made thinner; for example, the thickness can be made less than 0.15 μm, while under the premise of the same light-shielding effect, the thickness of the black matrix 90 in the related art is usually greater than 1.5 μm. In this way, in the embodiment of the present invention, the light-shielding structure 50 formed by stacking the light-absorbing layer 51, the dielectric layer 52, and the reflective layer 53 can minimize the size design to provide the possibility for subsequent improvement of the aperture ratio.

[0066] It should be noted that in the specific implementation process, the stacked light-shielding structure 50 and the support structure 60 can be formed by using a self-aligned single mask, thereby reducing the mask while improving the shielding effect on the support structure 60, which is beneficial to reducing the size of the light-shielding structure 50. Correspondingly, a self-aligned structure combining the light-shielding structure 50 and the support structure 60 can be adopted to realize the preparation of the first spacer 41. In this way, while ensuring the support strength and reducing the reflection, the aperture ratio can be maximally improved.

[0067] In the embodiment of the present invention, as Figure 6As shown, the color filter substrate further includes an etching stop layer 70 located between the shielding structure 50 and the planarization layer 30, and the etching stop layer 70 is disposed on a side of the planarization layer 30 away from the substrate 10.

[0068] In Figure 6 In the exemplary embodiment shown, the color filter substrate further includes an etching stop layer 70 located between the shielding structure 50 and the planarization layer 30. Exemplarily, the etching stop layer 70 can be SiO2, or other inorganic film layers with high transmittance. The thickness range of the etching stop layer 70 can be 30 nm to 100 nm. Of course, the material of the etching stop layer 70 and the specific thickness value can also be set according to actual application needs, which is not limited herein. During the actual preparation of the shielding structure 50, the etching stop layer 70 can effectively avoid the damage to the planarization layer 30 caused by over-etching, thereby improving the service performance of the color filter substrate.

[0069] In the embodiment of the present invention, still referring to Figure 6 As shown, the first spacer 41 further includes a mask layer 80 located on a side of the support structure 60 away from the substrate 10. The orthographic projection of the support structure 60 on the substrate 10 completely falls within the area range of the orthographic projection of the mask layer 80 on the substrate 10, and the orthographic projection of the mask layer 80 on the substrate 10 completely falls within the area range of the orthographic projection of the corresponding shielding structure 50 on the substrate 10.

[0070] Still referring to Figure 6 In the exemplary embodiment shown, the first spacer 41 further includes a mask layer 80 located on a side of the support structure 60 away from the substrate 10. The mask layer 80 can be a metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or other materials such as metal Mo. In addition, the orthographic projection of the support structure 60 on the substrate 10 completely falls within the area range of the orthographic projection of the mask layer 80 on the substrate 10. Exemplarily, the support structure 60 and the mask layer 80 can be arranged with their edges aligned, or the projected area of the mask layer 80 on the substrate 10 can be larger than the projected area of the support structure 60 on the substrate 10. Among them, for the specific structural dimensions of the support structure 60 and the mask layer 80, reference can be made to the description in the relevant part below, which is not limited herein.

[0071] In the embodiment of the present invention, the shielding structure 50 can be arranged in the following two ways, but is not limited to the following two ways.

[0072] In one arrangement, as Figure 7As shown, the shielding structure 50 includes a plurality of first branches 501 extending in the first direction, and the orthographic projection of the support structure 60 on the substrate 10 completely falls within the region of the orthographic projection of the corresponding first branch 501 on the substrate 10.

[0073] Still in combination with Figure 7 the exemplary embodiment shown, the direction indicated by arrow X is the first direction. In the specific implementation process, the shielding structure 50 includes a plurality of first branches 501 extending in the first direction. Among them, the specific number of the plurality of first branches 501 can be set according to actual application needs and is not limited herein. Moreover, the orthographic projection of the support structure 60 on the substrate 10 completely falls within the region of the orthographic projection of the corresponding first branch 501 on the substrate 10. In this way, while taking into account the light shielding effect of the shielding structure 50, the support strength of the first spacer 41 is ensured.

[0074] In one setting method, as Figure 8 shown, the shielding structure 50 further includes a plurality of second branches 502 extending in a second direction intersecting the first direction. The plurality of first branches 501 and the plurality of second branches 502 intersect to form a mesh structure including a plurality of mesh holes 503, and the orthographic projection of each mesh hole 503 on the substrate 10 completely falls within the region of the orthographic projection of the color resist layer 20 on the substrate 10.

[0075] Still in combination with Figure 8 the exemplary embodiment shown, the direction indicated by arrow Y is the second direction. In the specific implementation process, the shielding structure 50 further includes a plurality of second branches 502 extending in the second direction. Among them, the specific number of the plurality of second branches 502 can be set according to actual application needs and is not limited herein. Moreover, the plurality of first branches 501 and the plurality of second branches 502 intersect to form a mesh structure including a plurality of mesh holes 503, and the orthographic projection of each mesh hole 503 on the substrate 10 completely falls within the region of the orthographic projection of the color resist layer 20 on the substrate 10. In actual applications, each mesh hole 503 corresponds to the opening of the color resist block 21 in the color resist layer 20; by adjusting the mesh holes 503 of the mesh structure in the shielding structure 50, the aperture ratio of the color filter substrate can be adjusted; in this way, in a limited space, the aperture ratio can be increased by increasing the size of the mesh hole 503 structure, ensuring the light transmittance and improving the device brightness. It should be noted that Figure 6 the cross-sectional structure diagram shown can be regarded as the structural schematic diagram along the Figure 7 and Figure 8 direction NN shown in

[0076] In an embodiment of the present invention, the orthographic projection shape of the support structure 60 on the substrate 10 is one of a rectangle, a circle, a triangle, and a broken line shape.

[0077] In Figure 7 and Figure 8 In the exemplary embodiment shown, the orthographic projection shape of the support structure 60 on the substrate 10 is a rectangle. Of course, the specific shape of the support structure 60 can also be set according to actual application needs and will not be elaborated here.

[0078] Still in combination with Figure 7 and Figure 8 In the exemplary embodiment shown, along a second direction intersecting the first direction, the extension length of the first branch 501 at the corresponding position of the support structure 60 satisfies the relationship: b = a + 2d, where b represents the extension length of the first branch 501 at the corresponding position of the support structure 60 along the second direction, a represents the extension length of the support structure 60 along the second direction, and d represents the distance between the outer edge of the support structure 60 and the outer edge of the corresponding first branch 501. In this way, while taking into account the support performance, the effective light-shielding effect of the shielding structure 50 is ensured. Among them, the specific numerical values of a, b, and d can be set according to actual application needs and are not limited here.

[0079] Still in combination with Figure 7 and Figure 8 In the exemplary embodiment shown, along the direction perpendicular to the plane where the substrate 10 is located, the extension lengths of the support structure 60 and the mask layer 80 satisfy the relationship: 0.8d < h < 1.5d, where h represents the extension lengths of the support structure 60 and the mask layer 80 along the direction perpendicular to the plane where the substrate 10 is located. In this way, the effective shielding of the support structure 60 by the shielding structure 50 is ensured, and the occurrence of light leakage is avoided. Among them, the specific numerical values of h and d can be set according to actual application needs and are not limited here.

[0080] Still in combination with Figure 7 and Figure 8In the exemplary embodiment shown, along the second direction, the extension lengths of the branches of the plurality of first branches 501 except for the positions corresponding to the support structure 60 satisfy the relationship: c < 2d, where c represents the extension length of the branches of the plurality of first branches 501 except for the positions corresponding to the support structure 60 along the second direction. In the specific implementation process, along the second direction, the extension lengths of the branches of the plurality of first branches 501 except for the positions corresponding to the support structure 60 are set to c < 2d. In this way, during the actual preparation of the second spacer 42, it is ensured that after ashing etching, the organic spacer layer 204 above the shielding structure 50 corresponding to the second spacer 42 can be completely removed, and only the film layer structure related to the shielding structure 50 remains. Among them, the specific numerical values of c and d can be set according to actual application needs and are not limited here.

[0081] In the embodiment of the present invention, the extension length of the shortest side of the support structure 60 satisfies the relationship: l ≤ b - 2d, where l represents the extension length of the shortest side of the support structure 60. In this way, while taking into account the light shielding effect, the support performance of the support structure 60 is ensured. Among them, the specific numerical values of b, d, and l can be set according to actual application needs and are not limited here. Based on Figure 8 In the exemplary embodiment shown, the relevant numerical values can be: a is 1.0 μm, b is 3.0 μm, c is 1.5 μm, d is 1.0 μm, h is 1.0 μm, and l is 1.0 μm. Of course, the specific sizes of the relevant numerical values can also be set according to actual application needs and are not limited here.

[0082] In the embodiment of the present invention, as Figure 9 shown, the color filter substrate further includes a black matrix 90 located in the peripheral area B. The black matrix 90 is located between the substrate 10 and the planarization layer 30, and the black matrix 90 surrounds the color resist layer 20. Exemplarily, the thickness range of the black matrix 90 is 0.5 μm to 2 μm. In this way, by providing the black matrix 90 in the peripheral area, on the one hand, the step difference between the peripheral area and the display area A can be compensated, avoiding adverse effects on the subsequent selection of silicon balls and the design of the display area A; on the other hand, the black matrix 90 provided in the peripheral area can be reused as an alignment mark (mark) layer, thus simplifying the manufacturing process and ensuring the process manufacturing efficiency.

[0083] It should be noted that in Figure 8In the exemplary embodiment shown, the orthographic projection of the gap between two adjacent color resist blocks 21 in the color resist layer 20 on the substrate 10 completely falls within the region range of the orthographic projection of the shielding structure 50 on the substrate 10. In this way, the color bleeding interference between adjacent color resist blocks 21 is avoided, and the service performance of the color filter substrate is ensured. In addition, the color filter substrate provided by the embodiment of the present invention may further include other film layer structures in addition to the film layer structures mentioned above. The specific setting can be designed with reference to related technologies and is not limited herein.

[0084] Based on the same inventive concept, as Figure 10 shown, the embodiment of the present invention further provides a display device, which includes the color filter substrate 100 described in any one of the above, a display substrate 200 disposed opposite to the color filter substrate 100, and a liquid crystal layer 300 located between the color filter substrate 100 and the display substrate 200.

[0085] It should be noted that in the display device provided by the embodiment of the present invention, the display device further includes a plurality of gate lines. Correspondingly, the first direction may be the direction along which the gate lines extend, and the second direction may be the direction perpendicular to the first direction.

[0086] In the specific implementation process, the principle of the display device to solve the problem is similar to that of the aforementioned color filter substrate 100. Therefore, the implementation of the display device can refer to the implementation of the aforementioned color filter substrate 100, and the repeated parts will not be elaborated.

[0087] In the embodiment of the present invention, still in combination with Figure 10 shown, the display substrate 200 includes a substrate 201, and spacers 202 disposed on the substrate 201 corresponding to the first spacer 41 and the second spacer 42 respectively; wherein, the spacer 202 is in contact with the corresponding first spacer 41, and a preset distance is provided between the spacer 202 and the corresponding second spacer 42, and the orthographic projection of the spacer 202 on the substrate 10 overlaps with the orthographic projection of the corresponding second spacer 42 on the substrate 10. The specific value of the preset distance can be set according to actual application needs and is not limited herein.

[0088] Still in combination with Figure 10 the exemplary embodiment shown, a light shielding layer 203 is further provided between the spacer 202 and the substrate 201, and the orthographic projection of the spacer 202 on the substrate 201 completely falls within the region range of the orthographic projection of the light shielding layer 203 on the substrate 201. Exemplarily, the light shielding layer 203 may be made of an opaque metal oxide material, and the spacer 202 may be made of metal. The specific setting can be realized with reference to related technologies and will not be elaborated herein.

[0089] In the specific implementation process, after the color filter substrate 100 and the display substrate 200 are aligned, the spacer 202 is arranged in contact with the corresponding first spacer 41, thereby ensuring the support performance of the liquid crystal box. In addition, the spacer 202 and the corresponding second spacer 42 are arranged at a preset distance. Accordingly, after the color filter substrate 100 and the display substrate 200 are aligned, the second spacer 42 is suspended. When the liquid crystal box is compressed due to external force or temperature changes, the second spacer 42 can be used to contact the spacer 202 to provide auxiliary support for the liquid crystal box, thereby ensuring the support performance of the liquid crystal box, which is conducive to maintaining the uniformity of the box thickness. Of course, the color filter substrate 100 and the display substrate 200 provided in the embodiment of the present invention, in addition to the film layer structure mentioned above, can also include other film layer structures, and the specific settings can be implemented with reference to the relevant technology, which will not be described in detail here.

[0090] In the specific implementation process, the display device provided by the embodiment of the present invention can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a laptop computer, a digital photo frame, a navigator, an augmented reality device, a virtual reality device, etc. Other essential components of the display device should be understood by ordinary technicians in the field, and will not be repeated here, nor should they be used as a limitation to the present invention.

[0091] Based on the same inventive concept, Figure 11 As shown, an embodiment of the present invention further provides a method for manufacturing a color filter substrate, the manufacturing method comprising:

[0092] S101: forming a color resist layer and a planar layer covering the color resist layer on a substrate in sequence;

[0093] S102: stacking a plurality of film layers in sequence on a side of the flat layer facing away from the substrate to form a pattern of a shielding structure;

[0094] S103: forming a pattern of a supporting structure at a part of the shielding structure away from the substrate, to obtain a first spacer consisting of an overlapping portion of the supporting structure and the shielding structure, and a second spacer consisting of the remaining portion of the shielding structure except the overlapping portion.

[0095] In the embodiment of the present invention, Figure 12 As shown, step S102: stacking a plurality of film layers in sequence on a side of the flat layer away from the substrate to form a pattern of a shielding structure, including:

[0096] S201: depositing an etching stop layer, a light absorbing layer, a dielectric layer, a reflective layer, a spacer layer and a mask layer in sequence on a side of the planar layer facing away from the substrate;

[0097] S202: Pattern the light-absorbing layer, the dielectric layer, the reflective layer, the spacer layer, and the mask layer to form a pattern including a shielding structure.

[0098] In an embodiment of the present invention, as Figure 13 shown, step S103: On a side of a partial position of the shielding structure facing away from the substrate, form a pattern of a support structure, including:

[0099] S301: Adopt a secondary ashing etching process to form a pattern of a support structure on a side of a partial position of the shielding structure facing away from the substrate, and obtain a first spacer formed by an overlapping portion of the support structure and the shielding structure;

[0100] S302: On a side of the remaining positions of the shielding structure other than the partial position facing away from the substrate, etch away corresponding portions of the support structure and the mask layer, and obtain a second spacer formed by the remaining portion of the shielding structure other than the overlapping portion at the remaining positions.

[0101] In a specific implementation process, in combination with Figure 14 the process flow chart shown below, Figure 9 a specific manufacturing process of the color filter substrate 100 shown is explained in detail.

[0102] First, a black matrix 90 is provided in a peripheral area of the substrate 10, and the thickness range of the black matrix 90 is 0.5 μm to 2 μm; then, a color resist layer 20 is fabricated; by way of example, if the color resist layer 20 includes red color resist blocks 21, green color resist blocks 21, and blue color resist blocks 21 that are spaced apart from each other, the blue color resist blocks 21, green color resist blocks 21, and red color resist blocks 21 can be fabricated respectively; then, a planarization layer 30 is deposited on a side of the color resist layer 20 facing away from the substrate 10; by way of example, the material of the planarization layer 30 can be selected as an organic acrylic material, and its thickness range is 0.4 μm to 1.5 μm. Then, on a side of the planarization layer 30 facing away from the substrate 10, an etch stop layer 70, a light-absorbing layer 51, a dielectric layer 52, and a reflective layer 53 are sequentially deposited; by way of example, the etch stop layer 70 is selected as SiO2 or other inorganic film layers with high transmittance, and its thickness range can be 30 nm to 200 nm; the light-absorbing layer 51 can be made of a metal material with light-absorbing characteristics such as Mo, W, MoO, etc., and the thickness range is 1 nm to 10 nm; the dielectric layer 52 can be made of an inorganic material such as SiN, and its thickness range can be 30 nm to 100 nm; the thickness range of the reflective layer 53 is 50 nm to 150 nm.

[0103] Then, continue with the deposition of the spacer layer 204 and the mask layer 80; Exemplarily, the material of the spacer layer 204 is an organic material, and its thickness ranges from 1.0 μm to 2.0 μm. Specifically, the specific thickness of the spacer layer 204 can be set according to subsequent cell requirements, which is not limited herein; The material of the mask layer 80 can be a metal oxide material such as ITO or IZO, or can also be a material such as metal Mo, which is not limited herein. Then, use a self-aligned same mask to pattern the mask layer 80, the spacer layer 204, the reflective layer 53, the dielectric layer 52, and the light-absorbing layer 51. Among them, the label 205 represents photoresist, and the sizes of the relevant film layers at the corresponding positions of the first spacer 41 are relatively large, while the sizes of the relevant film layers at the corresponding positions of the second spacer 42 are relatively small. Then, perform a secondary ashing etching process to form the pattern of the required support structure 60 above the shielding structure 50 corresponding to the first spacer 41; Since the mask layer 80 will shrink during the ashing process, in this case, the smaller-sized mask layer 80 at the corresponding position of the second spacer 42 will be completely removed, and subsequently, the spacer layer 204 at the corresponding position of the second spacer 42 can be completely etched away. In this way, only the relevant structures of the reflective layer 53, the dielectric layer 52, and the light-absorbing layer 51 exist at the corresponding position of the second spacer 42, which facilitates the formation of the second spacer 42. In this way, the first spacer 41 and the second spacer 42 with the required structures can be obtained. As Figure 15 Shown is a partial structural schematic diagram of the secondary ashing etching. Among them, the support structure 60 at the corresponding position of the first spacer 41 will be retained, and the required structure of the first spacer 41 can be obtained by removing the photoresist at the corresponding position subsequently; Since the size of the mask layer 80 at the corresponding position of the second spacer 42 is small, it is completely shrunk and removed during the ashing process, and subsequently, the support structure 60 at this position can be etched away. Correspondingly, only the shielding structure 50 of the stacked structure is retained at the corresponding position of the second spacer 42.

[0104] An embodiment of the present invention provides a color filter substrate 100, a manufacturing method thereof, and a display device. The color filter substrate 100 includes a substrate 10, a color resist layer 20 located on the substrate 10, a planarization layer 30 covering the color resist layer 20, and a spacer layer 40 located on a side of the planarization layer 30 away from the substrate 10. The spacer layer 40 includes a shielding structure 50 formed by sequentially stacking a plurality of film layers. A support structure 60 is provided at a partial position on a side of the shielding structure 50 away from the substrate 10. An overlapping portion of the support structure 60 and the shielding structure 50 constitutes a first spacer 41, and the remaining portion of the shielding structure 50 except the overlapping portion constitutes a second spacer 42. That is to say, for the first spacer 41, its support structure 60 is provided on a side of the shielding structure 50 away from the substrate 10. In this way, under the same shielding effect of the shielding structure 50 on the support structure 60, the size of the shielding structure 50 can be effectively reduced, thereby providing the possibility of maximizing the aperture ratio. Moreover, the first spacer 41 further has a support structure 60 compared with the second spacer 42, thus taking into account the support strength of the first spacer 41.

[0105] Although the preferred embodiments of the present invention have been described, those skilled in the art can make additional changes and modifications once they learn the basic creative concept. Therefore, the appended claims are intended to be construed to include the preferred embodiments as well as all changes and modifications falling within the scope of the present invention.

[0106] Obviously, those skilled in the art can make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalent technologies, this application is also intended to include these changes and modifications.

Claims

1. A color film substrate, characterized in that, Comprising: a substrate, a color resist layer located on the substrate, a planarization layer covering the color resist layer, and a spacer layer located on a side of the planarization layer away from the substrate; wherein, the spacer layer includes a shielding structure formed by sequentially stacking a plurality of film layers; a support structure is provided at a partial position on a side of the shielding structure away from the substrate, and an overlapping portion of the support structure and the shielding structure constitutes a first spacer, and the remaining portion of the shielding structure except the overlapping portion constitutes a second spacer.

2. The color filter substrate according to claim 1, wherein The shielding structure includes an absorbing layer, a dielectric layer, and a reflective layer sequentially arranged in a direction away from the substrate, and the absorbing layer, the dielectric layer, and the reflective layer are flush-mounted.

3. The color filter substrate according to claim 2, wherein It further includes an etching stop layer located between the shielding structure and the planarization layer, and the etching stop layer is provided on a side of the planarization layer away from the substrate.

4. The color filter substrate according to claim 3, wherein The first spacer further includes a mask layer located on a side of the support structure away from the substrate, a positive projection of the support structure on the substrate completely falls within a region range of a positive projection of the mask layer on the substrate, and a positive projection of the mask layer on the substrate completely falls within a region range of a positive projection of the corresponding shielding structure on the substrate.

5. The color filter substrate according to claim 4, wherein, The shielding structure includes a plurality of first branches extending in a first direction, and a positive projection of the support structure on the substrate completely falls within a region range of a positive projection of the corresponding first branch on the substrate.

6. The color filter substrate according to claim 5, wherein The shielding structure further includes a plurality of second branches extending in a second direction intersecting with the first direction, and the plurality of first branches and the plurality of second branches intersect to enclose a mesh structure including a plurality of mesh holes, and a positive projection of each mesh hole on the substrate completely falls within a region range of a positive projection of the color resist layer on the substrate.

7. The color filter substrate according to claim 5 or 6, wherein The color resist layer includes color resist blocks of multiple different colors, the color resist blocks in adjacent rows are staggered, and a positive projection of the support structure on the substrate partially overlaps with positive projections of adjacent color resist blocks of various colors on the substrate.

8. The color filter substrate according to claim 5 or 6, wherein Along a second direction intersecting with the first direction, the extension length of the first branch at a corresponding position of the support structure satisfies the relationship: b = a + 2d, where b represents the extension length of the first branch at the corresponding position of the support structure along the second direction, a represents the extension length of the support structure along the second direction, and d represents the distance between an outer edge of the support structure and an outer edge of the corresponding first branch.

9. The color filter substrate according to claim 8, wherein Along a direction perpendicular to a plane where the substrate is located, the extension lengths of the support structure and the mask layer satisfy the relationship: 0.8d < h < 1.5d, where h represents the extension lengths of the support structure and the mask layer along the direction perpendicular to the plane where the substrate is located.

10. The color filter substrate according to claim 8, wherein Along the second direction, the extension length of the branch of the plurality of first branches except the corresponding position of the support structure satisfies the relationship: c < 2d, where c represents the extension length of the branch of the plurality of first branches except the corresponding position of the support structure along the second direction.

11. The color filter substrate according to claim 8, characterized in that, The extension length of the shortest side of the support structure satisfies the relationship: l ≤ b - 2d, where l represents the extension length of the shortest side of the support structure.

12. The color filter substrate according to any one of claims 1-6, 9-11, characterized in that, It further includes a black matrix located in the peripheral region, the black matrix is located between the substrate and the planarization layer, and the black matrix surrounds the color resist layer.

13. A display device, characterized in that, Comprising: A color filter substrate as described in any one of claims 1 - 12, a display substrate disposed opposite to the color filter substrate, and a liquid crystal layer located between the color filter substrate and the display substrate.

14. The display device according to claim 13, wherein The display substrate includes a substrate, and spacers respectively disposed corresponding to the first spacer and the second spacer on the substrate; wherein, the spacer is in contact with the corresponding first spacer, there is a preset distance between the spacer and the corresponding second spacer, and the orthographic projection of the spacer on the substrate overlaps with the orthographic projection of the corresponding second spacer on the substrate.

15. A method for manufacturing a color filter substrate, characterized in that, Comprising: A color resist layer is sequentially formed on the substrate, and a planarization layer covering the color resist layer; On the side of the planarization layer facing away from the substrate, a plurality of film layers are sequentially stacked to form a pattern of a shielding structure; On the side of a partial position of the shielding structure facing away from the substrate, a pattern of a support structure is formed to obtain a first spacer formed by an overlapping portion of the support structure and the shielding structure, and a second spacer formed by the remaining portion of the shielding structure except the overlapping portion.

16. The method according to claim 15, wherein On the side of the planarization layer facing away from the substrate, a plurality of film layers are sequentially stacked to form a pattern of a shielding structure, including: On the side of the planarization layer facing away from the substrate, an etch stop layer, a light absorbing layer, a dielectric layer, a reflective layer, a spacer layer, and a mask layer are sequentially deposited; The light absorbing layer, the dielectric layer, the reflective layer, the spacer layer, and the mask layer are patterned to form a pattern including a shielding structure.

17. The method according to claim 16, wherein On the side of a partial position of the shielding structure facing away from the substrate, a pattern of a support structure is formed, including: Using a secondary ashing etch process, on the side of a partial position of the shielding structure facing away from the substrate, a pattern of a support structure is formed to obtain a first spacer formed by an overlapping portion of the support structure and the shielding structure; On the side of the remaining position of the shielding structure except the partial position facing away from the substrate, the corresponding partial support structure and the mask layer are etched away, and in the remaining position, a second spacer formed by the remaining portion of the shielding structure except the overlapping portion is obtained.

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