A power substrate, a power module and a method for preparing a power substrate

By using an insulating layer and a fluid metal layer made of the same material as the chip substrate in the power substrate, the problem of bending deformation caused by differences in thermal expansion coefficients during the welding process is solved, achieving a high-reliability and low-cost welding effect, which is suitable for the industrialization of power modules.

CN120453249BActive Publication Date: 2025-09-05CHONGQING CLOUDCHILD TECH CO LTD
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Patent Information

Application Number
CN202510967363.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-07-14
Publication Date
2025-09-05
Estimated Expiration
2045-07-14

AI Technical Summary

Technical Problem

The existing power substrate bends and deforms during the welding process due to differences in thermal expansion coefficients, affecting welding quality and reliability. In addition, the existing technology is complex and costly, which is not conducive to industrialization.

Method used

The insulating layer is made of the same material as the power chip substrate, and a first metal layer and a second metal layer are arranged on the surface of the insulating layer. The insulating layer is a flat plate structure, and the second metal layer has fluidity at high temperatures to ensure welding consistency.

Benefits of technology

It reduces the risk of power chip failure, improves welding quality and module reliability, simplifies the process, reduces costs, and is suitable for industrial production.

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Abstract

The present invention discloses a power substrate, a power module, and a method for preparing a power substrate, which are applied to the field of power device technology. A first metal layer is located on the bottom surface of an insulating layer and is coated along at least one side surface of the insulating layer to a first area on the top surface of the insulating layer. A second metal layer is located in a second area on the top surface of the insulating layer. The first metal layer and the second metal layer are isolated from each other on the top surface of the insulating layer. The insulating layer includes a main body layer made of the same material as the substrate in the power chip to be bonded. The main body layer is provided with an insulating film layer at least in the second area of ​​the top surface. The second metal layer is isolated from the main body layer by the insulating film layer. By setting the main body layer to be made of the same material as the substrate in the power chip to be bonded, the thermal expansion coefficient of the insulating layer and the power chip can be roughly the same, so that the insulating layer can be set as a flat plate. By setting the first metal layer to coat the insulating layer, the structural strength of the entire insulating layer can be increased, ensuring that the power substrate meets the required structural performance.
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