Reading method, device and memory of a memory device

Abstract

This application provides a method, apparatus, and memory for reading a storage device. The method includes: determining a refresh time interval based on write / read time intervals supported by multiple read voltages of the storage device, and performing a full refresh of the storage device within the refresh time interval; responding to a read operation command, reading the storage device using a first read voltage, and determining whether the read result of the first read voltage is error-correctable; if the read result of the first read voltage is not error-correctable, reading the storage device using a second read voltage, wherein the second read voltage is higher than the first read voltage. This application avoids the need for complex write / read time statistics to select a suitable read voltage due to threshold voltage drift by sequentially attempting to read the device after a timed full refresh within the refresh time interval, thus effectively solving the problem of inaccurate data reading caused by threshold voltage drift using fewer resources.

Images