Optoelectronic integrated device, array and method based on composite dielectric gate structure

Abstract

The application discloses a kind of photoelectric integrated device, array and method based on composite dielectric gate structure.The device includes composite dielectric gate photosensitive detector and composite dielectric gate transistor formed above the same P-type semiconductor substrate, wherein, composite dielectric gate photosensitive detector is used to collect, store and read out photosensitive photoelectron, which is sequentially provided with first bottom insulating dielectric layer, first floating gate, first top insulating dielectric layer and first control gate above the substrate, is provided with first drain in the substrate, without source;Composite dielectric gate transistor is used to input or output electron to the composite dielectric gate photosensitive detector, which is sequentially provided with second bottom insulating dielectric layer, second floating gate, second top insulating dielectric layer and second control gate above the substrate, is provided with source and second drain in the substrate.The photoelectric integrated device of the application works using photoelectron, can be used as image sensor, while the problem of uneven initial signal distribution can be solved.

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