Twin crystal processing method for growing gallium antimonide by liquid-sealed pulling method
By stopping the lifting and adjusting the temperature and speed when twinning occurs in gallium antimonide crystals, the growth time prolonged by twinning in liquid sealing lifting method is solved, and efficient single crystal growth and cost reduction are achieved.
CN120505693APending Publication Date: 2025-08-19KUNMING INST OF PHYSICS
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Patent Information
- Application Number
- CN202510607454.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-13
- Publication Date
- 2025-08-19
AI Technical Summary
Technical Problem
When the existing liquid sealing lifting method grows gallium antimonide single crystals, the emergence of twins leads to an extended growth time, affecting efficiency and cost.
Method used
When the twined region of the gallium antimonide crystal appears, stop the pulling procedure, raise the melt temperature and slowly drop the seed rod until the twin region melts, and then continue to pull and grow to avoid completely back-melting the crystal.
Benefits of technology
It effectively shortens the growth time of single crystals, improves growth efficiency, ensures the quality of single crystals, and reduces production costs.
✦ Generated by Eureka AI based on patent content.
Abstract
The twin crystal treatment method for growing the gallium antimonide by the liquid seal pulling method comprises the following steps: heating and melting a gallium antimonide polycrystal and liquid seal agent powder in a crucible to obtain a gallium antimonide melt covered with a liquid seal agent, clamping a seed crystal by a seed crystal rod, contacting the liquid level of the gallium antimonide melt, slowly lifting the seed crystal rod according to a pulling procedure, and cooling to crystallize the melt on the seed crystal, thereby obtaining the gallium antimonide crystal. Finally, pulling to form a gallium antimonide crystal, and stopping a pulling procedure when a twin crystal area appears on the gallium antimonide crystal; raising the temperature of the gallium antimonide melt by 5-15 DEG C at the temperature raising speed of 0.3-0.5 DEG C / min according to the position of the twin crystal area at the diameter of the gallium antimonide crystal; the seed crystal rod slowly descends at the speed of 10-20 mm / h until the twin crystal area of the gallium antimonide crystal is completely melted, and the seed crystal rod stops descending; the seed crystal rod is continuously and slowly lifted according to the original pulling procedure, and the crucible is continuously cooled according to the original pulling procedure, so that the gallium antimonide crystal is continuously pulled to grow.
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