Method for avoiding surface pit defect in silicon carbide wafer production and detection process
By coating a polymer protective layer on the surface of the silicon carbide wafer and combining it with specific solvent cleaning, the problem of pit defects caused by vacuum adsorption is solved, ensuring the wafer surface quality and process stability, and reducing equipment maintenance costs.
Patent Information
- Application Number
- CN202510516499.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-23
- Publication Date
- 2025-09-16
AI Technical Summary
During the production and inspection process of silicon carbide wafers, surface pit defects caused by vacuum adsorption are difficult to remove effectively, affecting wafer quality and subsequent processes. Existing technologies such as alcohol wiping and ultrasonic cleaning are ineffective and costly.
A polymer solution is coated on the surface of the silicon carbide wafer to form a protective layer, which is then heated and dried before being tested by vacuum adsorption. After the test, it is cleaned and dried with a specific solvent to avoid physical damage.
It effectively avoids pit defects caused by vacuum adsorption, improves wafer surface quality and process consistency, and reduces equipment maintenance costs and operational complexity.