Semiconductor structure and manufacturing method thereof

By performing multiple cyclic purgings and gradient pressure reduction on the reaction chamber, the intrinsic layer doping problem caused by ion contamination within the reaction chamber was solved, thereby improving the performance and stability of the semiconductor device.

CN120809606APending Publication Date: 2025-10-17CHONGQING INNOEVSIC TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202510837069.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-20
Publication Date
2025-10-17

AI Technical Summary

Technical Problem

In the semiconductor fabrication process, ion contamination within the reaction chamber can cause the intrinsic layer doping concentration to deviate from design requirements, affecting device performance and stability.

Method used

Before forming the intrinsic layer on the substrate, the reaction chamber is purged multiple times in a stepwise manner, with hydrogen and argon gas being alternately introduced into the reaction chamber, and helium gas being used as the carrier gas. Gradient pressure reduction is used to reduce the doping concentration when forming the first and second intrinsic layers.

Benefits of technology

It effectively reduces the doping concentration of the intrinsic layer, improves the uniformity of carrier mobility and threshold voltage of the device, and enhances the yield and performance of semiconductor products.

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Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof, and the method comprises the steps: putting a substrate into a reaction chamber which is in a high-vacuum environment; circularly purging the reaction chamber for at least two times in a manner that the temperature rises section by section; and sequentially forming a first intrinsic layer and a second intrinsic layer on the substrate. According to the semiconductor structure and the manufacturing method thereof, the reaction chamber is fully cleaned before the intrinsic layer is formed on the substrate, so that the doping concentration of the intrinsic layer is reduced.
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