Preparation method of high-frequency low-thermal-expansion BT resin-based packaging substrate material
By optimizing the preparation process and surface modification treatment of scandium tungstate filler, the problems of dielectric loss and thermal expansion coefficient of BT resin substrate material in the high-frequency band were solved, realizing a high-frequency, low-thermal-expansion packaging substrate material, which improves the reliability of devices and signal transmission performance.
Patent Information
- Application Number
- CN202511036085.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-26
- Publication Date
- 2025-11-18
AI Technical Summary
Existing BT resin-based packaging substrate materials suffer from high dielectric loss at high frequencies, and the difference in thermal expansion coefficients leads to device warping and reliability issues. Traditional methods cannot simultaneously achieve excellent high-frequency dielectric performance and low thermal expansion.
By optimizing the preparation process of scandium tungstate filler, using gradient low-temperature pre-sintering and surface modification treatment, and combining it with a bismaleimide-triazine resin system, a scandium tungstate filler with small particle size and excellent dielectric properties was prepared for use in the preparation of high-frequency, low-thermal-expansion packaging substrate materials.
It significantly reduces the thermal expansion coefficient and dielectric loss of composite materials, improves the dimensional stability and high-frequency performance of the substrate, and meets the requirements of high-density packaging and high reliability.