Plasma extreme ultraviolet radiation energy and time domain waveform measurement method and device

By using a plasma extreme ultraviolet radiation energy and time-domain waveform measurement device, and utilizing a multilayer film curved reflector and a fast photodiode, the synchronous measurement of single-wavelength extreme ultraviolet radiation energy and time-domain waveform was achieved. This solved the problem of simultaneous measurement in existing technologies and improved the sensitivity and accuracy of the measurement.

CN121038075AActive Publication Date: 2025-11-28HUAXIN AURORA (SHANGHAI) TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202511372851.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-09-24
Publication Date
2025-11-28
Estimated Expiration
2045-09-24

AI Technical Summary

Technical Problem

Existing methods cannot simultaneously measure the energy and time-domain waveform of plasma extreme ultraviolet radiation, especially the time-domain waveform of a single wavelength of extreme ultraviolet radiation.

Method used

A plasma extreme ultraviolet radiation energy and time-domain waveform measurement device is adopted, including a vacuum maintenance module, an aperture limiting module, a filtering module, a wavelength selection and convergence module, and a photoelectric conversion module. Using a multilayer curved mirror and a fast photodiode, current signals are generated and processed through aperture limiting, filtering, wavelength selection and convergence to obtain time-domain waveforms and energy.

Benefits of technology

It enables simultaneous measurement of the energy and time-domain waveform of extreme ultraviolet radiation at a single wavelength, improving measurement sensitivity and accuracy, reducing equipment cost and operational difficulty, and adapting to different plasma light sources.

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Abstract

The invention provides a plasma extreme ultraviolet radiation energy and time domain waveform measurement method and device, and relates to the technical field of semiconductor manufacturing, and the method comprises the steps: carrying out the wavelength selection processing of extreme ultraviolet band radiation light, so as to separate out single-wavelength extreme ultraviolet light, and carrying out the convergence of the single-wavelength extreme ultraviolet light, so as to obtain the time domain waveform of the plasma extreme ultraviolet band radiation light; the extreme ultraviolet light is converged to obtain the converged extreme ultraviolet light with the single wavelength; performing photoelectric conversion processing on the converged extreme ultraviolet light with the single wavelength to generate a corresponding current signal; and collecting and processing the current signal, obtaining the time domain waveform of the single-wavelength extreme ultraviolet light according to the time domain waveform of the current signal, and calculating the radiation energy of the single-wavelength extreme ultraviolet light of the plasma in the 2pi solid angle according to the integral intensity of the current signal and the measurement solid angle. According to the invention, the plasma single-wavelength extreme ultraviolet radiation energy and the time domain waveform can be measured at the same time.
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