Non-volatile two-terminal memory device and memory system
By shorting adjacent bit lines and sharing source lines in the non-volatile end-to-end memory module, the problems of increased line resistance and parasitic capacitance are solved, realizing a high-density integrated and low-cost non-volatile memory design.
CN121191552BActive Publication Date: 2026-07-24INNOSTAR SEMICON (SHANGHAI) CO LTD
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Patent Information
- Application Number
- CN202511090558.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-05
- Publication Date
- 2026-07-24
- Estimated Expiration
- 2045-08-05
AI Technical Summary
Technical Problem
When increasing storage capacity, existing non-volatile end-point memory faces problems such as excessive line resistance, increased parasitic capacitance and resistance, which makes high-density chip integration difficult and increases production costs.
Method used
By shorting adjacent bit lines in the non-volatile end-to-end memory module, the bit line width is increased, the bit line resistance and parasitic capacitance are reduced, signal integrity is optimized, and the source line is shared to reduce the use of metal layers.
Benefits of technology
It reduces bit line resistance and power consumption, improves signal speed and integration, reduces production costs, reduces crosstalk and leakage problems, and enhances the reliability and density of memory devices.
✦ Generated by Eureka AI based on patent content.
Abstract
The application discloses a nonvolatile two-terminal storage device and a storage system. The nonvolatile two-terminal storage device comprises a nonvolatile two-terminal storage unit, which comprises a gate and a nonvolatile two-terminal memory. The first end of the gate is electrically connected with the second end of the nonvolatile two-terminal memory, the second end of the gate is electrically connected with a source line, and the first end of the nonvolatile two-terminal memory is electrically connected with a bit line. All the nonvolatile two-terminal storage units in a nonvolatile two-terminal storage module share one source line, and at least two bit lines corresponding to adjacent two nonvolatile two-terminal storage modules are short-circuited with each other. Thus, by short-circuiting the bit lines of adjacent two nonvolatile two-terminal storage modules, when a driving voltage is applied to a target nonvolatile two-terminal storage unit, the width of the bit line is equivalent to being increased, so that the bit line resistance can be reduced, and then the use of metal layers on the nonvolatile two-terminal storage device can be reduced, which is favorable for reducing the production cost.
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