Light-emitting substrate, display substrate and display device

Abstract

The invention discloses a light-emitting substrate, a display substrate and a display device. The light-emitting substrate includes a plurality of light-emitting devices including a first light-emitting device and a second light-emitting device, the first light-emitting device and the second light-emitting device respectively including a first electrode, a second electrode, a first light-emitting unit, a second light-emitting unit, and a charge generation layer. The first light-emitting unit and the second light-emitting unit are configured to emit light of the same color, and the first light-emitting device and the second light-emitting device are arranged adjacently and configured to emit light of different colors. The distance between the surface, away from the first electrode, of the charge generation layer and the surface, close to the charge generation layer, of the first electrode is the top height of the charge generation layer, and the value range of the ratio of the top height of the charge generation layer of the first light-emitting device to the top height of the charge generation layer of the second light-emitting device is 0.85-1.15. The first light-emitting device and the second light-emitting device can have the partition structures with the same height, the design of the partition structures is simplified, and the yield of the light-emitting substrate is improved.

Description

Light-emitting substrate, display substrate and display device TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to a light-emitting substrate, a display substrate and a display device. BACKGROUND

[0002] In recent years, an organic light emitting diode (OLED) has gradually attracted more attention as a new type of flat panel display. Due to its characteristics of active light emission, high light emission brightness, high resolution, wide viewing angle, fast response speed, low energy consumption and flexibility, it has become a mainstream display product in the current market. With the continuous development of products, customers have higher and higher requirements for the resolution of products, and lower and lower requirements for power consumption. It is necessary to develop an organic light emitting diode with high efficiency, low voltage and long service life.

[0003] A stacked device is a device in which multiple light-emitting units of the same color are stacked together through a charge generation layer (CGL), so that the light-emitting efficiency and the service life of the stacked device are improved to 1.5-2 times of the original single light-emitting unit. The stacked device is widely used in display panels, vehicle-mounted products, lighting and other fields.

[0004] SUMMARY

[0005] Embodiments of the present disclosure provide a light-emitting substrate, a display substrate and a display device.

[0006] At least one embodiment of the present disclosure provides a light-emitting substrate, comprising a plurality of light-emitting devices arranged in an array, the plurality of light-emitting devices comprising a first light-emitting device and a second light-emitting device; the first light-emitting device and the second light-emitting device each comprising: a first electrode; a second electrode; a first light-emitting unit between the first electrode and the second electrode; a second light-emitting unit between the first light-emitting unit and the second electrode; and a charge generation layer between the first light-emitting unit and the second light-emitting unit, the first light-emitting unit and the second light-emitting unit of the first light-emitting device being configured to emit light of the same color, the first light-emitting unit and the second light-emitting unit of the second light-emitting device being configured to emit light of the same color, the first light-emitting device and the second light-emitting device being arranged adjacent to each other and configured to emit light of different colors, a distance between a surface of the charge generation layer away from the first electrode and a surface of the first electrode close to the charge generation layer being a top height of the charge generation layer, a ratio of the top height of the charge generation layer of the first light-emitting device to the top height of the charge generation layer of the second light-emitting device being in a range of 0.85-1.15.

[0007] For example, in the light-emitting substrate provided in an embodiment of the present disclosure, the first light-emitting device emits light with a wavelength greater than that of the second light-emitting device, and the first light-emitting unit includes a plurality of film layers, and the refractive index of at least one of the plurality of film layers of the first light-emitting unit of the first light-emitting device is greater than that of the corresponding film layer of the first light-emitting unit of the second light-emitting device.

[0008] For example, in the light-emitting substrate provided in an embodiment of the present disclosure, the top height of the charge generation layer of the first light-emitting device is equal to that of the charge generation layer of the second light-emitting device.

[0009] For example, in the light-emitting substrate provided in an embodiment of the present disclosure, the absolute value of the difference between the top height of the charge generation layer of the first light-emitting device and that of the charge generation layer of the second light-emitting device is not greater than 15 nm.

[0010] For example, in the light-emitting substrate provided in an embodiment of the present disclosure, the first light-emitting unit includes a first light-emitting layer, the distance between the surface of the first light-emitting layer away from the first electrode and the surface of the first electrode close to the first light-emitting layer is the top height of the first light-emitting layer, and the ratio of the top height of the first light-emitting layer of the first light-emitting device to that of the second light-emitting device is in the range of 0.85-1.15.

[0011] For example, in the light-emitting substrate provided in an embodiment of the present disclosure, the top height of the first light-emitting layer of the first light-emitting device is equal to that of the second light-emitting device.

[0012] For example, in the light-emitting substrate provided in an embodiment of the present disclosure, the absolute value of the difference between the top height of the first light-emitting layer of the first light-emitting device and that of the second light-emitting device is in the range of 0-15 nm.

[0013] For example, in the light-emitting substrate provided in an embodiment of the present disclosure, the first light-emitting unit further includes a first adjusting layer on the side of the first light-emitting layer close to the first electrode, the second light-emitting unit includes a second light-emitting layer and a second adjusting layer on the side of the second light-emitting layer close to the charge generation layer, and the first light-emitting device emits light with a wavelength greater than that of the second light-emitting device.

[0014] For example, in the light-emitting substrate provided in an embodiment of the present disclosure, the thickness of the first light-emitting layer of the first light-emitting device is less than that of the second light-emitting layer of the first light-emitting device, and / or the thickness of the first adjusting layer of the first light-emitting device is less than that of the second adjusting layer of the first light-emitting device.

[0015] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the sum of the thickness of the first light-emitting layer and the first adjustment layer of the first light-emitting device is less than the sum of the thickness of the second light-emitting layer and the second adjustment layer of the first light-emitting device.

[0016] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the thickness of the first light-emitting layer of the second light-emitting device is greater than or equal to the thickness of the second light-emitting layer of the second light-emitting device.

[0017] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the sum of the thickness of the first light-emitting layer and the first adjustment layer of the second light-emitting device is less than the sum of the thickness of the second light-emitting layer and the second adjustment layer of the second light-emitting device.

[0018] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the thickness of the first light-emitting layer of the first light-emitting device is less than the thickness of the first light-emitting layer of the second light-emitting device.

[0019] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the thickness of the second light-emitting layer of the first light-emitting device is greater than the thickness of the second light-emitting layer of the second light-emitting device, and / or the thickness of the second adjustment layer of the first light-emitting device is greater than the thickness of the second adjustment layer of the second light-emitting device.

[0020] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the refractive index of the first light-emitting layer of the first light-emitting device is greater than the refractive index of the first light-emitting layer of the second light-emitting device, and / or the refractive index of the first adjustment layer of the first light-emitting device is greater than the refractive index of the first adjustment layer of the second light-emitting device.

[0021] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the plurality of light-emitting devices further comprises a third light-emitting device, the third light-emitting device comprises a first electrode, a second electrode, a first light-emitting unit located between the first electrode and the second electrode, a second light-emitting unit located between the first light-emitting unit and the second electrode, and a charge generation layer located between the first light-emitting unit and the second light-emitting unit, the first light-emitting unit and the second light-emitting unit of the third light-emitting device are configured to emit light of the same color; the third light-emitting device is configured to emit light of a different color from the first light-emitting device and the second light-emitting device, at least one of the first light-emitting device and the second light-emitting device is adjacent to the third light-emitting device, and the top height of the charge generation layer of the first light-emitting device, the top height of the charge generation layer of the second light-emitting device, and the top height of the charge generation layer of the third light-emitting device are all equal.

[0022] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the top height of the first light-emitting layer of the first light-emitting device, the top height of the first light-emitting layer of the second light-emitting device, and the top height of the first light-emitting layer of the third light-emitting device are all equal.

[0023] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the plurality of light-emitting devices further include a third light-emitting device, the third light-emitting device includes a first electrode, a second electrode, a first light-emitting unit between the first electrode and the second electrode, a second light-emitting unit between the first light-emitting unit and the second electrode, and a charge generation layer between the first light-emitting unit and the second light-emitting unit, the first light-emitting unit and the second light-emitting unit of the third light-emitting device are configured to emit light of the same color; the first light-emitting device is configured to emit red light, the second light-emitting device is configured to emit green light, and the third light-emitting device is configured to emit blue light, a surface of the first light-emitting layer of the first light-emitting unit close to the first electrode is at a first distance from a surface of the first electrode close to the first light-emitting layer, the first distance of the first light-emitting device ranges from 35 nm to 50 nm, the first distance of the second light-emitting device ranges from 35 nm to 50 nm, and the first distance of the third light-emitting device ranges from 25 nm to 40 nm.

[0024] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, a surface of the second light-emitting layer of the second light-emitting unit close to the first electrode is at a second distance from a surface of the first electrode close to the second light-emitting layer, the second distance of the first light-emitting device ranges from 180 nm to 200 nm, the second distance of the second light-emitting device ranges from 140 nm to 165 nm, and the second distance of the third light-emitting device ranges from 105 nm to 125 nm.

[0025] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the first adjustment layer includes at least one of an electron blocking layer or a hole transport layer, and the second adjustment layer includes at least one of an electron blocking layer or a hole transport layer.

[0026] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the charge generation layer includes a p-type charge generation layer and an n-type charge generation layer stacked, the p-type charge generation layer is between the n-type charge generation layer and the second light-emitting unit, the n-type charge generation layer is doped with first metal atoms, a doping proportion of the first metal atoms ranges from 0.5% to 10%, and a thickness of the n-type charge generation layer ranges from 5 nm to 50 nm.

[0027] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the doping proportion of the first metal atoms is in a range of 1% to 5%, and the thickness of the n-type charge generation layer is in a range of 5 nm to 20 nm.

[0028] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the second light-emitting unit further comprises an electron injection layer, the electron injection layer comprises an organic host material and second metal atoms doped in the organic host material, the doping proportion of the second metal atoms is in a range of 0.5% to 10%, and the thickness of the electron injection layer is in a range of 5 nm to 50 nm.

[0029] For example, in the light-emitting substrate provided by an embodiment of the present disclosure, the doping proportion of the second metal atoms is in a range of 1% to 7%, and the thickness of the electron injection layer is in a range of 5 nm to 30 nm.

[0030] For example, the light-emitting substrate provided by an embodiment of the present disclosure further comprises a partition structure, the partition structure is arranged around the light-emitting device to at least partition the charge generation layers of adjacent light-emitting devices from each other.

[0031] An embodiment of the present disclosure provides a display device, comprising a substrate substrate; a driving circuit layer arranged on the substrate substrate; and a light-emitting device layer arranged on a side of the driving circuit layer away from the substrate substrate, the light-emitting device layer comprising a plurality of light-emitting devices arranged in an array and a plurality of partition structures, the driving circuit layer being configured to drive the light-emitting devices to emit light, the plurality of light-emitting devices comprising a first light-emitting device and a second light-emitting device; the first light-emitting device and the second light-emitting device each comprising a first electrode, a second electrode, a first light-emitting unit between the first electrode and the second electrode, a second light-emitting unit between the first light-emitting unit and the second electrode, and a charge generation layer between the first light-emitting unit and the second light-emitting unit, the first light-emitting unit and the second light-emitting unit of the first light-emitting device being configured to emit light of the same color, the first light-emitting unit and the second light-emitting unit of the second light-emitting device being configured to emit light of the same color, the first light-emitting device and the second light-emitting device being arranged adjacent to each other and configured to emit light of different colors, the partition structure being arranged around the light-emitting device to at least partition the charge generation layers of adjacent light-emitting devices from each other, the distance between the surface of the charge generation layer away from the first electrode and the surface of the first electrode close to the charge generation layer being the top height of the charge generation layer, and the ratio of the top height of the charge generation layer of the first light-emitting device to the top height of the charge generation layer of the second light-emitting device being in a range of 0.85 to 1.15.

[0032] The display device provided by at least one of the embodiments of the present disclosure includes the light-emitting substrate or the display substrate.

[0033] By setting the ratio of the top height of the charge generation layer of the first light-emitting device and the second light-emitting device to be 0.85-1.15, the height difference of the top height of the two can be small. Thus, the height of the partition structure of the charge generation layer of the first light-emitting device and the second light-emitting device can be equal, the design of the partition structure is simplified, and the breakage of the cathode of the first light-emitting device or the second light-emitting device can be avoided, and the yield of the light-emitting substrate is improved. BRIEF DESCRIPTION OF DRAWINGS

[0034] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only related to some of the embodiments of the present disclosure, but not limit the present disclosure.

[0035] FIG. 1 is a structural schematic diagram of a light-emitting substrate provided by an embodiment of the present disclosure;

[0036] FIG. 2 is a graph of the relationship between the efficiency C.E. of different color light-emitting devices and the thickness of the first hole transport layer and the second electron transport layer;

[0037] FIG. 3 is a graph of the relationship between the efficiency C.E. of different light-emitting devices with a constant cavity length and the thickness of the first hole transport layer;

[0038] FIG. 4 is a graph of the performance of a green light-emitting device with different thicknesses of the n-type charge generation layer of a light-emitting substrate provided by an embodiment of the present disclosure;

[0039] FIG. 5 is a graph of the performance of a light-emitting device with different forms of cathodes;

[0040] FIG. 6 is a graph of the performance of different color light-emitting devices with different forms of cathodes;

[0041] FIG. 7 is a graph of the performance of a light-emitting device with different thicknesses of an electron injection layer of a light-emitting substrate provided by an embodiment of the present disclosure;

[0042] FIG. 8 is an energy level diagram of a light-emitting device including an electron injection layer provided by an embodiment of the present disclosure;

[0043] FIG. 9 is a graph of the lifetime of a light-emitting device with different forms of electron injection layers;

[0044] FIG. 10 is a structural schematic diagram of another light-emitting substrate provided by an embodiment of the present disclosure;

[0045] FIG. 11 is a structural schematic diagram of a display substrate provided by an embodiment of the present disclosure;

[0046] FIG. 12A is a schematic diagram of a display device according to an embodiment of the present disclosure; and

[0047] FIG. 12B is a schematic diagram of another display device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0048] In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely below with reference to the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are some but not all of the embodiments of the present disclosure. Based on the described embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative effort fall within the scope of the present disclosure.

[0049] Unless otherwise defined, technical terms or scientific terms used in the present disclosure shall have the ordinary meanings as understood by those of ordinary skill in the art to which the present disclosure pertains. The terms “first”, “second” and similar terms used in the present disclosure do not denote any order, quantity or importance, but are used to distinguish different components. The terms “include” or “contain” and similar terms mean that the elements or objects before the terms encompass the elements or objects listed after the terms and their equivalents, and do not exclude other elements or objects. The terms “connect” or “connected” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0050] Unless otherwise defined, the terms “parallel”, “perpendicular” and “same” and similar terms used in the embodiments of the present disclosure include the cases of “strictly parallel”, “strictly perpendicular”, “strictly same” and similar terms, and the cases of “approximately parallel”, “approximately perpendicular”, “approximately same” and similar terms with certain errors. For example, the above “approximately” can mean that the difference between the compared objects is within 10% or 5% of the average value of the compared objects. In the embodiments of the present disclosure, when the number of a component or element is not specifically indicated, it means that the component or element can be one or multiple, or can be understood as at least one. “At least one” means one or more, and “multiple” means at least two. In the embodiments of the present disclosure, “disposed in the same layer” means the relationship between multiple film layers formed by the same material after the same step (for example, one patterning process). Here, “in the same layer” does not always mean that the thicknesses of the multiple film layers are the same or the heights of the multiple film layers in a cross-sectional view are the same.

[0051] In the field of organic electroluminescence or display, the mobility of the charge generation layer in the stacked device is high, which is prone to cause lateral transport of carriers, resulting in electrical crosstalk and color mixing. In order to improve the color gamut, the film layer with high mobility is usually physically separated. However, the cavity length of light emitting devices with different light emitting colors is usually different, making the physical separation structure design more complex. If the light emitting devices with different cavity lengths use the same height of physical separation, the cathode layer of the light emitting device with smaller cavity length will be easily broken.

[0052] The charge generation layer is usually prepared by doping, including n-type charge generation layer (n-CGL) and p-type charge generation layer (p-CGL). Generally, n-CGL is prepared by doping metal atoms. Metal atoms have a strong effect on light absorption, so the selection and doping ratio of metal atoms are the key to the process preparation.

[0053] The electron injection layer is usually prepared by using ytterbium (Yb) or lithium fluoride (LiF) materials. However, a large thickness of Yb will have a great impact on OLED light emission. In addition, if a magnesium-silver-indium zinc oxide (MgAg-IZO) composite cathode is used, the sputtering blocking effect of Yb on IZO is weak, which will have a great impact on the performance of the device.

[0054] The present disclosure provides a light emitting substrate, a display substrate and a display device. The light emitting substrate includes a plurality of light emitting devices arranged in an array, and the plurality of light emitting devices includes first light emitting devices and second light emitting devices. The first light emitting devices and the second light emitting devices each include a first electrode, a second electrode, a first light emitting unit, a second light emitting unit and a charge generation layer. The first light emitting unit is located between the first electrode and the second electrode, the second light emitting unit is located between the first light emitting unit and the second electrode, and the charge generation layer is located between the first light emitting unit and the second light emitting unit. The first light emitting unit and the second light emitting unit of the first light emitting device are configured to emit light of the same color, the first light emitting unit and the second light emitting unit of the second light emitting device are configured to emit light of the same color, and the first light emitting devices and the second light emitting devices are arranged adjacent to each other and configured to emit light of different colors. The distance between the surface of the charge generation layer away from the first electrode and the surface of the first electrode close to the charge generation layer is the top height of the charge generation layer, and the ratio of the top height of the charge generation layer of the first light emitting device to the top height of the charge generation layer of the second light emitting device is in the range of 0.85-1.15. For example, the top height of the charge generation layer of the first light emitting device is equal to the top height of the charge generation layer of the second light emitting device.

[0055] In the light-emitting substrate provided by the embodiments of the present disclosure, by setting the ratio of the top height of the charge generation layer of the first light-emitting device to the top height of the charge generation layer of the second light-emitting device to be 0.85-1.15, the height difference between the top height of the charge generation layer of the first light-emitting device and the top height of the charge generation layer of the second light-emitting device is small. Thus, when the charge generation layers of the first light-emitting device and the second light-emitting device are partitioned, the height of the partition structure of the charge generation layer of the first light-emitting device can be equal to the height of the partition structure of the charge generation layer of the second light-emitting device, simplifying the design of the partition structure. Moreover, because the height difference between the top height of the charge generation layer of the first light-emitting device and the top height of the charge generation layer of the second light-emitting device is small, the same height of the partition structure can also avoid breaking the cathode of the first light-emitting device or the second light-emitting device, improving the yield of the light-emitting substrate.

[0056] In the following, the light-emitting substrate and the display device provided by the embodiments of the present disclosure are described in detail in combination with the drawings.

[0057] The embodiments of the present disclosure provide a light-emitting substrate. FIG. 1 is a schematic structural diagram of a light-emitting substrate provided by an embodiment of the present disclosure. As shown in FIG. 1, the light-emitting substrate 100 includes a plurality of light-emitting devices 110 arranged in an array. For example, FIG. 1 shows three light-emitting devices 1101, 1102 and 1103, but this is merely exemplary. The first light-emitting device 1101 and the second light-emitting device 1103 each include a first electrode 111, a second electrode 115, a first light-emitting unit 112, a second light-emitting unit 114 and a charge generation layer 113. The first light-emitting unit 112 is located between the first electrode 111 and the second electrode 115, the second light-emitting unit 114 is located between the first light-emitting unit 112 and the second electrode 115, and the charge generation layer 113 is located between the first light-emitting unit 112 and the second light-emitting unit 114. The first light-emitting unit 112 and the second light-emitting unit 114 of the first light-emitting device 1101 are configured to emit light of the same color, the first light-emitting unit 112 and the second light-emitting unit 114 of the second light-emitting device 1103 are configured to emit light of the same color, and the first light-emitting device 1101 and the second light-emitting device 1102 are arranged adjacently and configured to emit light of different colors. For the convenience of description of the first light-emitting device 1101 and the second light-emitting device 1102, FIG. 1 schematically shows that the leftmost light-emitting device is the first light-emitting device 1101 and the middle light-emitting device is the second light-emitting device 1102, but this is not a limitation of the embodiments of the present disclosure.

[0058] The distance from the surface of the first electrode 111 away from the charge generation layer 113 to the surface of the first electrode 111 close to the charge generation layer 113 is the top height H1 of the charge generation layer 113, and the ratio of the top height H1 of the charge generation layer 113 of the first light emitting device 1101 to the top height H1 of the charge generation layer 113 of the second light emitting device 1102 is in the range of 0.85-1.15. For example, the top height H1 of the charge generation layer 113 of the first light emitting device 1101 is equal to the top height H1 of the charge generation layer 113 of the second light emitting device 1102.

[0059] In the light emitting substrate provided by the embodiments of the present disclosure, by setting the ratio of the top height of the charge generation layer of the first light emitting device to the top height of the charge generation layer of the second light emitting device in the range of 0.85-1.15, the height difference between the top height of the charge generation layer of the first light emitting device and the top height of the charge generation layer of the second light emitting device is small. Thus, when the charge generation layers of the first light emitting device and the second light emitting device are partitioned, the height of the partition structure of the charge generation layer of the first light emitting device can be equal to the height of the partition structure of the charge generation layer of the second light emitting device, simplifying the design of the partition structure. Moreover, since the height difference between the top height of the charge generation layer of the first light emitting device and the top height of the charge generation layer of the second light emitting device is small, the same height of the partition structure can also avoid breaking the cathode of the first light emitting device or the second light emitting device, improving the yield of the light emitting substrate.

[0060] The embodiments of the present disclosure do not limit the partition structure, for example, the partition structure can be formed by the same conductive material through the same patterning process as the pixel definition layer.

[0061] It should be noted that the adjacent arrangement of the first light emitting device and the second light emitting device means that there is no other light emitting device between the first light emitting device and the second light emitting device, and the first light emitting device and the second light emitting device can include a film layer or a structure that plays an isolation role.

[0062] In some examples, the ratio of the top height of the charge generation layer of the first light emitting device to the top height of the charge generation layer of the second light emitting device can be 0.9, 0.95, 1, 1.05, 1.1, etc., which will not be repeated here.

[0063] In some examples, the absolute value of the difference between the top height of the charge generation layer of the first light emitting device and the top height of the charge generation layer of the second light emitting device is not greater than 15nm. For example, the absolute value of the difference is not greater than 10nm. For example, the absolute value of the difference is not greater than 8nm. For example, the absolute value of the difference is not greater than 5nm. For example, the absolute value of the difference is not greater than 3nm.

[0064] In some examples, the wavelength of the light emitted by the first light emitting device is greater than the wavelength of the light emitted by the second light emitting device. The first light emitting unit includes a plurality of film layers, and the refractive index of at least one of the plurality of film layers of the first light emitting unit of the first light emitting device is greater than the refractive index of the corresponding film layer of the first light emitting unit of the second light emitting device. Since the wavelength of the light emitted by the first light emitting device is greater than the wavelength of the light emitted by the second light emitting device, when the top height of the charge generation layer of the first light emitting device and the second light emitting device is substantially equal, the efficiency of the first light emitting device or the second light emitting device can be affected. By making the refractive index of at least one of the plurality of film layers of the first light emitting unit of the first light emitting device greater than the refractive index of the corresponding film layer of the first light emitting unit of the second light emitting device, the efficiency of the first light emitting device or the second light emitting device can be improved.

[0065] For example, the first light emitting unit includes a light emitting layer. For example, the first light emitting unit further includes an electron transport layer, a hole blocking layer, an electron blocking layer, or a hole transport layer. For example, the refractive index of the at least one layer can be adjusted to improve the efficiency of the light emitting device.

[0066] In some examples, as shown in FIG. 1, the first light emitting unit 112 includes a first light emitting layer 1124, and the distance between the surface of the first light emitting layer 1124 away from the first electrode 111 and the surface of the first electrode 111 close to the first light emitting layer 1124 is the top height H2 of the first light emitting layer 1124. The ratio of the top height H2 of the first light emitting layer 1124 of the first light emitting device 1101 to the top height H2 of the first light emitting layer 1124 of the second light emitting device 1102 is in the range of 0.85-1.15. For example, the ratio can be 0.9, 0.95, 1, 1.05, 1.1, etc., which will not be repeated here.

[0067] The top height of the charge generation layer of the light emitting device with different light emitting color is mainly caused by the different top height of the light emitting layer close to the first electrode. By making the ratio of the top height of the first light emitting layer of the first light emitting device to the top height of the first light emitting layer of the second light emitting device within the range of 0.85-1.15, the height difference of the top height of the first light emitting layer of the first light emitting device to the top height of the first light emitting layer of the second light emitting device can be small, and the height difference of the top height of the charge generation layer of the first light emitting device to the top height of the charge generation layer of the second light emitting device can be small. Thus, when the charge generation layer of the first light emitting device and the charge generation layer of the second light emitting device are partitioned, the height of the partition structure of the charge generation layer of the first light emitting device can be equal to the height of the partition structure of the charge generation layer of the second light emitting device, and the design of the partition structure is simplified. Moreover, since the height difference of the top height of the charge generation layer of the first light emitting device to the top height of the charge generation layer of the second light emitting device is small, the fracture of the cathode of the first light emitting device or the second light emitting device caused by the partition structure with the same height can be avoided, and the yield of the light emitting substrate is improved.

[0068] For example, the thickness of the film layer between the first light emitting layer and the charge generation layer is equal. Thus, the manufacturing process of the film layer can be simplified.

[0069] In some examples, the top height of the first light emitting layer of the first light emitting device is equal to the top height of the first light emitting layer of the second light emitting device. Thus, the height of the partition structure of the charge generation layer of the first light emitting device can be equal to the height of the partition structure of the charge generation layer of the second light emitting device.

[0070] In some examples, the absolute value of the difference of the top height of the first light emitting layer of the first light emitting device to the top height of the first light emitting layer of the second light emitting device is within the range of 0-15nm. For example, the absolute value of the difference is not greater than 10nm. For example, the absolute value of the difference is not greater than 8nm. For example, the absolute value of the difference is not greater than 5nm. For example, the absolute value of the difference is not greater than 3nm.

[0071] In some examples, as shown in FIG. 1, the first light emitting unit 112 further includes a first adjustment layer 1123 located at the side of the first light emitting layer 1124 close to the first electrode 111. The second light emitting unit 114 includes a second light emitting layer 1143 and a second adjustment layer 1142 located at the side of the second light emitting layer 1143 close to the charge generation layer 113.

[0072] For example, the first adjustment layer can be at least one of an electron blocking layer or a hole transport layer. For example, the second adjustment layer can be at least one of an electron blocking layer or a hole transport layer.

[0073] For example, the wavelength of the light emitted by the first light emitting device is greater than the wavelength of the light emitted by the second light emitting device. For example, the first light emitting device can be a red light emitting device, and the second light emitting device can be a green light emitting device. For example, the first light emitting device can be a red light emitting device, and the second light emitting device can be a blue light emitting device. For example, the first light emitting device can be a green light emitting device, and the second light emitting device can be a blue light emitting device.

[0074] Since the wavelength of red light is greater than the wavelength of green light, and the wavelength of green light is greater than the wavelength of blue light, generally, the top height of the light emitting layer of the red light emitting device is greater than the top height of the light emitting layer of the green light emitting device, and the top height of the light emitting layer of the green light emitting device is greater than the top height of the light emitting layer of the blue light emitting device; the thickness of the light emitting layer and the adjustment layer of the red light emitting device is greater than the thickness of the light emitting layer and the adjustment layer of the green light emitting device, and the thickness of the light emitting layer and the adjustment layer of the green light emitting device is greater than the thickness of the light emitting layer and the adjustment layer of the blue light emitting device.

[0075] In the present disclosure, by appropriately reducing the total thickness of the first light emitting layer and the first adjustment layer of the first light emitting device, the difference in the top height of the first light emitting layer between the first light emitting device and the second light emitting device can be reduced, so that the top heights of the two are equal or as equal as possible, so that the same height of the partition structure can be adopted. By reducing the total thickness of the first light emitting layer and the first adjustment layer of the first light emitting device, the height of the partition structure between the first light emitting device and the second light emitting device can also be reduced, the influence of the partition structure on the cathode layer of the light emitting device is reduced, and the yield of the light emitting device is improved.

[0076] In some examples, the thickness of the first light emitting layer of the first light emitting device is less than the thickness of the second light emitting layer of the first light emitting device. By reducing the thickness of the first light emitting layer of the first light emitting device, the difference in the top height of the first light emitting layer between the first light emitting device and the second light emitting device can be reduced, so that the top heights of the two are equal or as equal as possible, so that the same height of the partition structure can be adopted.

[0077] In some examples, the thickness of the first adjustment layer of the first light emitting device is less than the thickness of the second adjustment layer of the first light emitting device. By reducing the thickness of the first adjustment layer of the first light emitting device, the difference in the top height of the first light emitting layer between the first light emitting device and the second light emitting device can be reduced, so that the top heights of the two are equal or as equal as possible, so that the same height of the partition structure can be adopted.

[0078] In some examples, the sum of the thicknesses of the first light emitting layer and the first adjustment layer of the first light emitting device is less than the sum of the thicknesses of the second light emitting layer and the second adjustment layer of the first light emitting device. By adjusting the thickness of the first light emitting layer or the first adjustment layer of the first light emitting device so that the first light emitting device and the second light emitting device can adopt the same height of partition structure, by making the sum of the thicknesses of the first light emitting layer and the first adjustment layer of the first light emitting device less than the sum of the thicknesses of the second light emitting layer and the second adjustment layer of the first light emitting device, the light emitting efficiency of the first light emitting device can be ensured.

[0079] In some examples, the total thickness of the first light emitting layer and the first adjustment layer of the second light emitting device can also be appropriately increased to reduce the difference in the top height of the first light emitting layer between the first light emitting device and the second light emitting device, so that the top heights of the two are equal or as equal as possible, so that the same height of partition structure can be adopted. For example, by reducing the total thickness of the first light emitting layer and the first adjustment layer of the first light emitting device and increasing the total thickness of the first light emitting layer and the first adjustment layer of the second light emitting device, the difference in the top height of the first light emitting layer between the first light emitting device and the second light emitting device is reduced, so that the top heights of the two are equal or as equal as possible, so that the same height of partition structure can be adopted.

[0080] In some examples, the thickness of the first light emitting layer of the second light emitting device is greater than or equal to the thickness of the second light emitting layer of the second light emitting device. By increasing the thickness of the first light emitting layer of the second light emitting device, the difference in the top height of the first light emitting layer between the first light emitting device and the second light emitting device can be reduced, so that the top heights of the two are equal or as equal as possible, so that the same height of partition structure can be adopted.

[0081] In some examples, the sum of the thicknesses of the first light emitting layer and the first adjustment layer of the second light emitting device is less than the sum of the thicknesses of the second light emitting layer and the second adjustment layer of the second light emitting device. By adjusting the thickness of the first light emitting layer of the second light emitting device so that the first light emitting device and the second light emitting device can adopt the same height of partition structure, by making the sum of the thicknesses of the first light emitting layer and the first adjustment layer of the second light emitting device less than the sum of the thicknesses of the second light emitting layer and the second adjustment layer of the second light emitting device, the light emitting efficiency of the second light emitting device can be ensured.

[0082] In some examples, the thickness of the first adjustment layer of the second light emitting device is less than the thickness of the second adjustment layer of the second light emitting device. By setting the thicknesses of the first adjustment layer and the second adjustment layer, the light emitting efficiency of the second light emitting device can be ensured.

[0083] In some examples, the thickness of the first light-emitting layer of the first light-emitting device is less than the thickness of the first light-emitting layer of the second light-emitting device. Thus, the top height of the first light-emitting layer of the first light-emitting device and the second light-emitting device can be made equal or as equal as possible to adopt the same height of partition structure. For example, the difference of the top height of the first light-emitting layer of the first light-emitting device and the second light-emitting device can be reduced by reducing the thickness of the first light-emitting layer of the first light-emitting device. For example, the difference of the top height of the first light-emitting layer of the first light-emitting device and the second light-emitting device can be reduced by increasing the thickness of the first light-emitting layer of the second light-emitting device.

[0084] In some examples, the thickness of the second light-emitting layer of the first light-emitting device is greater than the thickness of the second light-emitting layer of the second light-emitting device. Thus, the first light-emitting device and the second light-emitting device can have higher light-emitting efficiency.

[0085] In some examples, the thickness of the second adjustment layer of the first light-emitting device is greater than the thickness of the second adjustment layer of the second light-emitting device. Thus, by setting the thickness of the second adjustment layer, the light-emitting efficiency of the first light-emitting device and the second light-emitting device can be ensured.

[0086] In some examples, the refractive index of the first light-emitting layer of the first light-emitting device is greater than the refractive index of the first light-emitting layer of the second light-emitting device. For example, in order to make the top height of the charge generation layer of the first light-emitting device and the second light-emitting device equal, the thickness of the first light-emitting layer of the first light-emitting device can be reduced, and the change of the thickness of the first light-emitting layer can affect the geometric cavity length of the microcavity of the first light-emitting device, which can affect the light-emitting efficiency. By increasing the refractive index of the first light-emitting layer of the first light-emitting device, the optical cavity length of the microcavity of the first light-emitting device can be increased. Thus, the reduction of the thickness of the first light-emitting layer of the first light-emitting device can be compensated by the increase of the refractive index of the first light-emitting layer of the first light-emitting device, and the influence on the optical cavity length of the microcavity of the first light-emitting device can be minimized. For example, in order to make the top height of the charge generation layer of the first light-emitting device and the second light-emitting device equal, the thickness of the first light-emitting layer of the second light-emitting device can be increased, and the change of the thickness of the first light-emitting layer of the second light-emitting device can affect the geometric cavity length of the microcavity of the second light-emitting device, which can affect the light-emitting efficiency. By reducing the refractive index of the first light-emitting layer of the second light-emitting device, the optical cavity length of the microcavity of the second light-emitting device can be reduced. Thus, the increase of the thickness of the first light-emitting layer of the second light-emitting device can be adjusted by the reduction of the refractive index of the first light-emitting layer of the second light-emitting device, and the influence on the optical cavity length of the microcavity of the second light-emitting device can be minimized.

[0087] It should be noted that the distance, thickness, geometric cavity length, etc. in the present disclosure are all directly measurable values or dimensions, and the optical cavity length is the actual path length of light in the microcavity, and the refractive index of the medium in the microcavity also needs to be considered, and the optical cavity length is equal to the product of the geometric cavity length and the refractive index of the medium in the microcavity.

[0088] In some examples, the refractive index of the first adjustment layer of the first light emitting device is greater than the refractive index of the first adjustment layer of the second light emitting device. For example, in order to make the top height of the charge generation layer of the first light emitting device and the second light emitting device equal, the thickness of the first adjustment layer of the first light emitting device can be reduced, and the change in the thickness of the first adjustment layer will affect the geometric cavity length of the microcavity of the first light emitting device, which may affect the light emitting efficiency, and by increasing the refractive index of the first adjustment layer of the first light emitting device, the optical cavity length of the microcavity of the first light emitting device can be increased, so that the reduction in the thickness of the first adjustment layer of the first light emitting device can be compensated by the increase in the refractive index of the first adjustment layer of the first light emitting device, and the influence on the optical cavity length of the microcavity of the first light emitting device is minimized. For example, in order to make the top height of the charge generation layer of the first light emitting device and the second light emitting device equal, the thickness of the first adjustment layer of the second light emitting device can be increased, and the change in the thickness of the first adjustment layer will affect the geometric cavity length of the microcavity of the second light emitting device, which may affect the light emitting efficiency, and by reducing the refractive index of the first adjustment layer of the second light emitting device, the optical cavity length of the microcavity of the first light emitting device can be reduced, so that the increase in the thickness of the first adjustment layer of the second light emitting device can be adjusted by the decrease in the refractive index of the first adjustment layer of the second light emitting device, and the influence on the optical cavity length of the microcavity of the second light emitting device is minimized.

[0089] In some examples, as shown in FIG. 1, the plurality of light emitting devices 110 further includes a third light emitting device 1103, the third light emitting device 1103 includes a first electrode 111, a second electrode 115, a first light emitting unit 112, a second light emitting unit 114, and a charge generation layer 113. The first light emitting unit 112 is located between the first electrode 111 and the second electrode 115, the second light emitting unit 114 is located between the first light emitting unit 112 and the second electrode 115, the charge generation layer 113 is located between the first light emitting unit 112 and the second light emitting unit 114, and the first light emitting unit 112 and the second light emitting unit 114 of the third light emitting device 1103 are configured to emit light of the same color.

[0090] The third light-emitting device is configured to emit light of a different color from the first light-emitting device and the second light-emitting device, and the third light-emitting device is arranged adjacent to at least one of the first light-emitting device and the second light-emitting device. For example, the first light-emitting device 1101 is configured to emit red light, the second light-emitting device 1102 is configured to emit green light, and the third light-emitting device 1103 is configured to emit blue light. For example, the first light-emitting device is a red light-emitting device, the second light-emitting device is a green light-emitting device, and the third light-emitting device is a blue light-emitting device.

[0091] The distance between the surface of the first light-emitting layer 1124 of the first light-emitting unit 112 close to the first electrode 111 and the surface of the first electrode 111 close to the first light-emitting layer 1124 is a first distance D1. The value range of the first distance D1 of the first light-emitting device 1101 is 35 nm to 50 nm, the value range of the first distance D1 of the second light-emitting device 1102 is 35 nm to 50 nm, and the value range of the first distance D1 of the third light-emitting device 1103 is 25 nm to 40 nm. Thus, the light-emitting efficiency of the three light-emitting devices 110 can be ensured, and the light-emitting device 110 can have a lower thickness.

[0092] In some examples, as shown in FIG. 1, the distance between the surface of the second light-emitting layer 1143 of the second light-emitting unit 114 close to the first electrode 111 and the surface of the first electrode 111 close to the second light-emitting layer 1143 is a second distance D2. The value range of the second distance D2 of the first light-emitting device 1101 is 180 nm to 200 nm, the value range of the second distance D2 of the second light-emitting device 1102 is 140 nm to 165 nm, and the value range of the second distance D2 of the third light-emitting device 1103 is 105 nm to 125 nm. Thus, the light-emitting efficiency of the three light-emitting devices 110 can be ensured, and the light-emitting device 110 can have a lower thickness.

[0093] In some examples, as shown in FIG. 1, the first light-emitting unit 112 further includes a hole injection layer 1121 and a first hole transport layer 1122 located on the side of the first adjustment layer 1123 close to the first electrode 111, and the hole injection layer 1121 is closer to the first electrode 111 than the first hole transport layer 1122. The first light-emitting unit 112 further includes a first hole blocking layer 1125 and a first electron transport layer 1126 located on the side of the first light-emitting layer 1124 away from the first electrode 111, and the first electron transport layer 1126 is farther away from the first electrode 111 than the first hole blocking layer 1125. For example, the first adjustment layer is also referred to as a first electron blocking layer.

[0094] For example, the thicknesses of the hole injection layers of the plurality of light emitting devices are equal. For example, the thicknesses of the first hole transport layers of the plurality of light emitting devices are equal. For example, the thicknesses of the first hole blocking layers of the plurality of light emitting devices are equal. For example, the thicknesses of the first electron transport layers of the plurality of light emitting devices are equal.

[0095] In some examples, as shown in FIG. 1, the charge generation layer 113 includes a p-type charge generation layer 1132 and an n-type charge generation layer 1131 arranged in a stack, the p-type charge generation layer 1132 being located between the n-type charge generation layer 1131 and the second light emitting unit 114. For example, the thicknesses of the p-type charge generation layers 1132 of the plurality of light emitting devices 110 are equal. For example, the thicknesses of the n-type charge generation layers 1131 of the plurality of light emitting devices 110 are equal.

[0096] In some examples, as shown in FIG. 1, the second light emitting unit 114 further includes a second hole transport layer 1141 located on the side of the second adjustment layer 1142 close to the first electrode 111. The second light emitting unit 114 further includes a second hole blocking layer 1144, a second electron transport layer 1145 and an electron injection layer 1146 located on the second light emitting layer 1143 close to the second electrode 115. For example, the second adjustment layer is also referred to as a second electron blocking layer.

[0097] For example, the thicknesses of the second hole transport layers of the plurality of light emitting devices are equal. For example, the thicknesses of the second hole blocking layers of the plurality of light emitting devices are equal. For example, the thicknesses of the second electron transport layers of the plurality of light emitting devices are equal. For example, the thicknesses of the electron injection layers of the plurality of light emitting devices are equal.

[0098] For example, the first light emitting layer and the second light emitting layer of each light emitting device divide the light emitting device into three microcavities, the microcavity between the first light emitting layer and the anode being a front microcavity, the microcavity between the first light emitting layer and the second light emitting layer being a middle microcavity, and the microcavity between the second light emitting layer and the cathode being a rear microcavity. The optical cavity lengths of the three microcavities have a great influence on the light color and efficiency of the light emitting device.

[0099] Figure 2 is a graph of the efficiency C.E. of different color light emitting devices versus the thickness of the first hole transport layer and the second electron transport layer. In the graph, (a) is a graph of the efficiency of a red light emitting device versus the thickness of the first hole transport layer and the second electron transport layer; (b) is a graph of the efficiency of a green light emitting device versus the thickness of the first hole transport layer and the second electron transport layer; and (c) is a graph of the efficiency of a blue light emitting device versus the thickness of the first hole transport layer and the second electron transport layer. The abscissa is the thickness of the first hole transport layer, and different curves represent different thicknesses of the second electron transport layer. The thickness of the second electron transport layer of the red light emitting device is between 10 nm and 230 nm, and the thickness is taken every 5 nm to obtain the graphed curves; the thickness of the second electron transport layer of the green light emitting device is between 10 nm and 320 nm, and the thickness is taken every 5 nm to obtain the graphed curves; and the thickness of the second electron transport layer of the blue light emitting device is between 10 nm and 205 nm, and the thickness is taken every 5 nm to obtain the graphed curves.

[0100] When the optical cavity length of the front microcavity and the rear microcavity of the red light emitting device, the green light emitting device and the blue light emitting device is simulated, it can be obviously seen that the efficiency of each optical device periodically changes with the change of the optical cavity length. As shown in Figure 2, at the first wave peak of each light emitting device, the optimal optical cavity length of the red light emitting device, the green light emitting device and the blue light emitting device gradually decreases. By fine-tuning the optical cavity length of the front microcavity of the red light emitting device and the green light emitting device at the first wave peak position, the optical cavity length of the front microcavity of the red light emitting device and the green light emitting device can be made consistent, and meanwhile, the gain effect of the red light emitting device and the green light emitting device can be ensured. Thus, by adjusting the cavity length of the front microcavity of each color light emitting device, the top height of the first light emitting layer of each color light emitting device can be made equal or approximately equal, and the top height of the charge generation layer of each color light emitting device can be made equal or approximately equal.

[0101] The position of the first light emitting layer in the light emitting device has a great influence on the efficiency of the light emitting device when the cavity length of the light emitting device is constant. Figure 3 is a graph of the efficiency C.E. of different light emitting devices with a constant cavity length versus the thickness of the first hole transport layer. In the graph, (a) is a graph of the efficiency C.E. of a red light emitting device with a cavity length of 270 nm versus the thickness of the first hole transport layer; (b) is a graph of the efficiency C.E. of a green light emitting device with a cavity length of 235 nm versus the thickness of the first hole transport layer; and (c) is a graph of the efficiency C.E. of a blue light emitting device with a cavity length of 345 nm versus the thickness of the first hole transport layer, and the abscissa is the thickness of the first hole transport layer.

[0102] As shown in FIG. 3, for the red light-emitting device, there is an efficiency enhancement node in the thickness of the first hole transport layer near 32 nm and 185 nm; for the green light-emitting device, there is an efficiency enhancement node in the thickness of the first hole transport layer near 20 nm and 160 nm; for the blue light-emitting device, there are efficiency enhancement nodes in the thickness of the first hole transport layer near 20 nm, 145 nm and 280 nm.

[0103] For example, when the cavity length of the light-emitting device is fixed, the height of the charge generation layer above the red light-emitting device and the green light-emitting device can be made equal by reducing the thickness of the first adjustment layer of the red light-emitting device and increasing the thickness of the first adjustment layer of the green light-emitting device, so that the charge generation layers of the red light-emitting device and the green light-emitting device can be blocked by the same height of the blocking structure, the electrical crosstalk is reduced, and the color gamut is improved. At this time, in order to ensure the efficiency of the red light-emitting device, the refractive index of the first adjustment layer of the red light-emitting device can be increased, the reduction of the thickness of the first adjustment layer of the red light-emitting device can be compensated by the increase of the refractive index of the first adjustment layer, and the influence of the reduction of the thickness of the first adjustment layer of the red light-emitting device on the light-emitting efficiency of the red light-emitting device is minimized. In order to ensure the efficiency of the green light-emitting device, the refractive index of the first adjustment layer of the green light-emitting device can be reduced, the increase of the thickness of the first adjustment layer of the green light-emitting device can be adjusted by the reduction of the refractive index of the first adjustment layer, and the influence of the increase of the thickness of the first adjustment layer of the green light-emitting device on the light-emitting efficiency of the green light-emitting device is minimized.

[0104] In some examples, the thicknesses of the hole injection layer, the first hole transport layer, the first adjustment layer, the first light-emitting layer, the first hole blocking layer and the first electron transport layer of the first light-emitting unit of the red light-emitting device are 10 nm, 17 nm, 16.5 nm, 20 nm, 5 nm and 8 nm, respectively. For example, the thicknesses of the second hole transport layer, the second adjustment layer, the second light-emitting layer, the second hole blocking layer, the second electron transport layer and the electron injection layer of the second light-emitting unit of the red light-emitting device are 27 nm, 70 nm, 40 nm, 5 nm, 20 nm and 10 nm, respectively.

[0105] In some examples, the thicknesses of the hole injection layer, the first hole transport layer, the first adjustment layer, the first light-emitting layer, the first hole blocking layer and the first electron transport layer of the first light-emitting unit of the green light-emitting device are 10 nm, 17 nm, 14.5 nm, 28 nm, 5 nm and 8 nm, respectively. For example, the thicknesses of the second hole transport layer, the second adjustment layer, the second light-emitting layer, the second hole blocking layer, the second electron transport layer and the electron injection layer of the second light-emitting unit of the green light-emitting device are 27 nm, 21 nm, 28 nm, 5 nm, 20 nm and 10 nm, respectively.

[0106] In some examples, the thicknesses of the hole injection layer, the first hole transport layer, the first adjustment layer, the first light emitting layer, the first hole blocking layer, and the first electron transport layer of the first light emitting unit of the blue light emitting device are 10 nm, 17 nm, 5 nm, 18 nm, 5 nm, and 8 nm, respectively. For example, the thicknesses of the second hole transport layer, the second adjustment layer, the second light emitting layer, the second hole blocking layer, the second electron transport layer, and the electron injection layer of the second light emitting unit of the blue light emitting device are 27 nm, 5 nm, 18 nm, 5 nm, 20 nm, and 10 nm, respectively.

[0107] In some examples, as shown in FIG. 1, the charge generation layer 113 includes a p-type charge generation layer 1132 and an n-type charge generation layer 1131 which are arranged in a stack, and the p-type charge generation layer 1132 is located between the n-type charge generation layer 1131 and the second light emitting unit 114.

[0108] For example, the thickness of the n-type charge generation layer ranges from 5 nm to 50 nm. If the thickness of the n-type charge generation layer is too thin, the voltage of the light emitting device is high, and the power consumption of the light emitting substrate increases. If the thickness of the n-type charge generation layer is too thick, the n-type charge generation layer is not effectively blocked by the blocking structure, the electrical crosstalk of the light emitting device is large, and the color gamut is small. By making the thickness of the n-type charge generation layer range from 5 nm to 50 nm, the performance of the light emitting device can be better. For example, the thickness can be 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 15 nm, 18 nm, 20 nm, 25 nm, 30 nm, and the like, which will not be repeated here.

[0109] In some examples, the n-type charge generation layer is doped with first metal atoms. The doping of the first metal atoms can increase the separation ability of the electrons and holes of the charge generation layer, and improve the electrical performance of the charge generation layer.

[0110] For example, the doping ratio of the first metal atoms ranges from 0.5% to 10%, so that the influence of the first metal atoms on the voltage of the optical device can be reduced, the voltage of the optical device can be reduced, and the absorption of the first metal atoms to light can also be reduced. Thus, the optical device can have better performance, and the efficiency of the optical device is improved. The doping ratio is the ratio of the volume of the first metal atoms to the total volume of the n-type charge generation layer. For example, the doping ratio ranges from 1% to 5%. For example, the doping ratio is 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, and the like, which will not be repeated here.

[0111] In some examples, the first metal atoms doped in the n-type charge generation layer include lithium (Li), ytterbium (Yb), calcium (Ca), and the like.

[0112] FIG. 4 is a diagram showing the performance of a green light-emitting device with different thicknesses of an n-type charge generation layer according to an embodiment of the present disclosure. In (a), the diagram shows the luminance L versus the efficiency C.E.; in (b), the diagram shows the current density J versus the voltage V; in (c), the diagram shows the spectrum; in (d), the diagram shows the lifetime; and in (e), the diagram shows the summary of the performance. The thicknesses of the n-type charge generation layer of curve 1, curve 2, curve 3, and curve 4 are 5 nm, 10 nm, 15 nm, and 20 nm, respectively. Thus, when the thickness of the n-type charge generation layer is between 5 nm and 20 nm, the performance of the light-emitting device is in an optimal range, and this thickness range also helps to isolate the charge generation layer from the isolation structure, thereby improving the electrical crosstalk problem of the light-emitting device.

[0113] In some examples, as shown in FIG. 1, the second light-emitting unit 114 further includes an electron injection layer 1146.

[0114] For example, the electron injection layer includes an organic host material and second metal atoms doped in the organic host material. Compared with an electron injection layer using a metal film layer, the electron injection layer can significantly reduce the impact of the second metal atoms on the light output and the lifetime of the optical device, increase the light output of the light-emitting device, and improve the lifetime. The electron injection layer has a greater thickness and a greater thickness range, which can reduce the damage of magnetron sputtering particles to the electron injection layer, improve the electron injection capability, reduce the device voltage, and reduce the damage of the carriers to the film layer. The electron injection layer can also improve the electron mobility, reduce the electron accumulation, and significantly improve the lifetime of the light-emitting device.

[0115] In some examples, the doping ratio of the second metal atoms of the electron injection layer is in a range of 0.5% to 10%. In this example, compared with an electron injection layer using a metal film layer, the electron injection layer can significantly reduce the content of the second metal atoms, reduce the impact of the second metal atoms on the light output and the lifetime of the optical device, increase the light output of the light-emitting device, and improve the lifetime. The doping ratio is the ratio of the volume of the second metal atoms to the total volume of the electron injection layer. For example, the doping ratio can be 1%, 1.5%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, and the like, which will not be repeated here.

[0116] For example, the doped second metal atoms can be lithium (Li) or ytterbium (Yb).

[0117] In some examples, the electron injection layer has a thickness in a range of 5 nm to 50 nm. The electron injection layer has a greater thickness and a greater thickness range. The light emitting device has a greater lifetime. For example, when the material of the second electrode is a composite electrode, the electron injection layer can be selected to have a suitable thickness to reduce damage to the electron injection layer by magnetron sputtering particles, to improve electron injection capability, to reduce voltage of the optical device, and to increase lifetime of the optical device. For example, when the material of the second electrode is MgAg, the light emitting device also has a greater lifetime. In addition, the electron injection layer having a greater thickness can also reduce damage to the film layer by carriers. For example, the thickness can be in a range of 5 nm to 30 nm. For example, the thickness can be 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 15 nm, 20 nm, 25 nm, etc., which will not be repeated here.

[0118] For example, the second electrode can be a cathode. For example, the material of the second electrode can be aluminum (Al), magnesium (Mg), lithium (Li), magnesium silver (MgAg), magnesium silver-indium zinc oxide (MgAg-IZO) composite cathode, etc. For example, when the second electrode is MgAg-IZO, IZO can be both a part of the cathode and a light extraction structure.

[0119] FIG. 5 is a graph showing the effect of different forms of cathodes on the performance of a light emitting device. As shown in FIG. 5, compared to MgAg, a magnesium silver-indium zinc oxide (MgAg-IZO) composite cathode can increase voltage, reduce efficiency, and shorten lifetime.

[0120] FIG. 6 is a graph showing the effect of different forms of cathodes on the performance of light emitting devices of different colors. FIG. 6(a) shows the effect of different forms of cathodes on the spectrum, efficiency, and lifetime of a blue light emitting device, FIG. 6(b) shows the effect of different forms of cathodes on the spectrum, efficiency, and lifetime of a green light emitting device, and FIG. 6(c) shows the effect of different forms of cathodes on the spectrum, efficiency, and lifetime of a red light emitting device. The electron injection layer of the light emitting device is a lithium fluoride (LiF) film layer with a thickness of 1 nm. The cathode of the light emitting device of curve 1 is MgAg, and the cathode of the light emitting device of curve 2 is MgAg-IZO. As shown in FIG. 6, because IZO is damaged by high-energy particles passing through MgAg during film formation, the electron injection is abnormal, which increases voltage of the optical device and reduces lifetime. In addition, the interface between the electron injection layer and the electron transport layer is also abnormal, which causes carrier accumulation and causes film aging, which greatly affects the lifetime and performance of the optical device.

[0121] FIG. 7 is a diagram illustrating the influence of different thicknesses of the electron injection layer on the performance of the light-emitting device according to an embodiment of the present disclosure. The electron injection layer 1 in FIG. 7 is a metal film layer, and the electron injection layer 2 is an electron injection layer according to an embodiment of the present disclosure. Thus, the electron injection layer according to an embodiment of the present disclosure can reduce the voltage of the light-emitting device, improve the lifetime of the light-emitting device, and significantly improve the performance of the light-emitting device.

[0122] FIG. 8 is an energy level diagram of a light-emitting device including an electron injection layer according to an embodiment of the present disclosure. This diagram illustrates the performance of the electron injection layer according to an embodiment of the present disclosure by taking a single light-emitting unit as an example. As shown in FIG. 8, the blue light-emitting device includes a light extraction layer 129, a MgAg alloy cathode 128, an electron injection layer 127, an electron transport layer 126, a hole blocking layer 125, a light-emitting layer 124, an adjustment layer 123, a hole transport layer 122, a hole injection layer 121, and an anode. The electron injection layer of the light-emitting device is an electron injection layer according to an embodiment of the present disclosure. The electron injection layer 127 according to an embodiment of the present disclosure is less likely to accumulate charges and is more conducive to electron injection.

[0123] FIG. 9 is a diagram contrasting the lifetimes of light-emitting devices with different forms of electron injection layer. As shown in FIG. 9, the electron injection layer 1-1 is a metal ytterbium (Yb) film layer, the electron injection layer 1-2 is a lithium fluoride (LiF) film layer, and the electron injection layer 2 is an electron injection layer according to an embodiment of the present disclosure. By comparing the lifetimes of single-color light-emitting devices, the electron injection layer according to an embodiment of the present disclosure significantly improves the lifetime of the blue light-emitting device.

[0124] FIG. 10 is a structural diagram of another light-emitting substrate according to an embodiment of the present disclosure. As shown in FIG. 10, the plurality of light-emitting devices 110 include a first light-emitting device 1101, a second light-emitting device 1102, and a third light-emitting device 1103, which are configured to emit light of different colors. The third light-emitting device 1103 is disposed adjacent to at least one of the first light-emitting device 1101 and the second light-emitting device 1102. The top height H1 of the charge generation layer 113 of the first light-emitting device 1101, the top height H1 of the charge generation layer 113 of the second light-emitting device 1102, and the top height H1 of the charge generation layer 113 of the third light-emitting device 1103 are all equal. Since the top heights H1 of the charge generation layers 113 of the three light-emitting devices 110 are equal, the same height of the partition structure can be provided for any two light-emitting devices 110 when partitioning the charge generation layers 113 of the three light-emitting devices 110. Thus, not only does this make the design of the partition structure simpler and more convenient, but the spatial position of the partition structure can also be arranged according to the space requirements.

[0125] For example, the ratio of the top height of the charge generation layer of any two of the first light emitting device, the second light emitting device and the third light emitting device is within 0.85-1.15. For example, the ratio can be 0.9, 0.95, 1, 1.05, 1.1, etc., which will not be listed one by one here. Thus, the height difference of the charge generation layer of the first light emitting device, the second light emitting device and the third light emitting device can be made smaller, and the height of the partition structure of the charge generation layer of any two light emitting devices can be made equal when the charge generation layers of the three light emitting devices are partitioned.

[0126] For example, the absolute value of the difference of the top height of the charge generation layer of any two of the first light emitting device, the second light emitting device and the third light emitting device is not greater than 15 nm. For example, the absolute value of the difference is not greater than 10 nm. For example, the absolute value of the difference is not greater than 8 nm. For example, the absolute value of the difference is not greater than 5 nm. For example, the absolute value of the difference is not greater than 3 nm. Thus, the height difference of the charge generation layer of the first light emitting device, the second light emitting device and the third light emitting device can be made smaller, and the height of the partition structure of the charge generation layer of any two light emitting devices can be made equal when the charge generation layers of the three light emitting devices are partitioned.

[0127] In some examples, as shown in FIG. 10, the top height H2 of the first light emitting layer 1124 of the first light emitting device 1101, the top height H2 of the first light emitting layer 1124 of the second light emitting device 1102 and the top height H2 of the first light emitting layer 1124 of the third light emitting device 1103 are all equal. The top height of the charge generation layer 113 of the light emitting device 110 of different light emitting colors is mainly different due to the difference in the top height of the light emitting layer. By making the top height of the light emitting layer of the three light emitting devices 110 equal, the same height partition structure can be provided around any two light emitting devices 110 when the charge generation layers 113 of the three light emitting devices 110 are partitioned. Thus, not only the design of the partition structure is simpler and more convenient, but also the spatial position of the partition structure can be arranged according to the space requirement.

[0128] For example, the ratio of the top height of the first light emitting layer of any two of the first light emitting device, the second light emitting device and the third light emitting device is within 0.85-1.15. For example, the ratio can be 0.9, 0.95, 1, 1.05, 1.1, etc., which will not be listed one by one here. Thus, the height difference of the charge generation layer of the first light emitting device, the second light emitting device and the third light emitting device can be made smaller, and the height of the partition structure of the charge generation layer of any two light emitting devices can be made equal when the charge generation layers of the three light emitting devices are partitioned.

[0129] For example, the absolute value of the difference of the top height of the first light emitting layer of any two of the first light emitting device, the second light emitting device and the third light emitting device is not greater than 15 nm. For example, the absolute value of the difference is not greater than 10 nm. For example, the absolute value of the difference is not greater than 5 nm. For example, the absolute value of the difference is not greater than 3 nm. Thus, the height difference of the charge generation layer of the first light emitting device, the second light emitting device and the third light emitting device can be made small, and the height of the partition structure of the charge generation layer of any two light emitting devices can be made equal when the charge generation layer of the three light emitting devices is partitioned.

[0130] It should be noted that although the partition structure is not shown in the above drawings of the light emitting substrate, the light emitting substrate according to the embodiments of the present disclosure can include a partition structure arranged around the light emitting device, which at least partitions the charge generation layers of adjacent light emitting devices, thereby preventing crosstalk between adjacent light emitting devices. In addition, the partition structure of the light emitting substrate according to the embodiments of the present disclosure can refer to the description of the partition structure in the display substrate below, which will not be described here.

[0131] The embodiments of the present disclosure also provide a display substrate. FIG. 11 is a structural schematic diagram of a display substrate according to an embodiment of the present disclosure. As shown in FIG. 11, the display substrate 200 includes a substrate 230, a driving circuit layer 220 and a light emitting device layer 210. The driving circuit layer 220 is arranged on the substrate 230, and the light emitting device layer 210 is arranged on the side of the driving circuit layer 220 away from the substrate 230. The light emitting device layer 210 includes a plurality of light emitting devices 110 arranged in an array and a plurality of partition structures 211, and the driving circuit layer 220 is configured to drive the light emitting devices 110 to emit light. The plurality of light emitting devices 110 includes a first light emitting device 1101 and a second light emitting device 1102; the first light emitting device 1101 and the second light emitting device 1102 each include a first electrode 111, a second electrode 115, a first light emitting unit 112, a second light emitting unit 114 and a charge generation layer 113. The first light emitting unit 112 is located between the first electrode 111 and the second electrode 115, the second light emitting unit 114 is located between the first light emitting unit 112 and the second electrode 115, and the charge generation layer 113 is located between the first light emitting unit 112 and the second light emitting unit 114.

[0132] The first light emitting unit 112 and the second light emitting unit 114 of the first light emitting device 1101 are configured to emit light of the same color, the first light emitting unit 112 and the second light emitting unit 114 of the second light emitting device 1102 are configured to emit light of the same color, and the first light emitting device 1101 and the second light emitting device 1102 are arranged adjacent to each other and configured to emit light of different colors.

[0133] The partition structure 211 is arranged around the light emitting device 110 to at least partition the charge generation layer 113 of the light emitting device 110. For example, the partition structure arranged around the light emitting device can be that the partition structure completely surrounds the light emitting device. For example, the partition structure arranged around the light emitting device can be that the partition structure partially surrounds the light emitting device. For example, as shown in FIG. 11, the partition structure around the first light emitting device 1101 is a first partition structure 2111, and the partition structure around the second light emitting device 1102 is a second partition structure 2112. At least partitioning the charge generation layer 113 of the light emitting device 110 means that the charge generation layers of adjacent light emitting devices are partitioned, and other corresponding film layers can be connected to each other. For example, the respective film layers above the charge generation layer can be connected to each other between adjacent light emitting devices. Of course, all the organic film layers of adjacent light emitting devices can also be partitioned.

[0134] The distance between the surface of the charge generation layer 113 away from the first electrode 111 and the surface of the first electrode 111 close to the charge generation layer 113 is the top height H1 of the charge generation layer 113, and the ratio of the top height H1 of the charge generation layer 113 of the first light emitting device 1101 to the top height H1 of the charge generation layer 113 of the second light emitting device 1102 is in the range of 0.85-1.15. For example, the top height H1 of the charge generation layer 113 of the first light emitting device 1101 is equal to the top height H1 of the charge generation layer 113 of the second light emitting device 1102.

[0135] In the display substrate provided in the embodiments of the present disclosure, by making the ratio of the top height of the charge generation layer of the first light emitting device to the top height of the charge generation layer of the second light emitting device in the range of 0.85-1.15, the height difference between the top height of the charge generation layer of the first light emitting device and the top height of the charge generation layer of the second light emitting device can be small. Thus, when partitioning the charge generation layers of the first light emitting device and the second light emitting device, the height of the partition structure of the charge generation layer of the first light emitting device can be equal to the height of the partition structure of the charge generation layer of the second light emitting device, that is, the height of the first partition structure 2111 and the second partition structure 2112 in FIG. 11 can be equal, and the design of the partition structure is simplified. Moreover, since the height difference between the top height of the charge generation layer of the first light emitting device and the top height of the charge generation layer of the second light emitting device is small, the fracture of the cathode of the first light emitting device or the second light emitting device caused by the partition structure of the same height can also be avoided, and the yield of the light emitting substrate is improved.

[0136] The structure, film layer thickness, material refractive index, etc. of each light emitting device of the display substrate in the embodiments of the present disclosure are the same as those of the light emitting device of the light emitting substrate described above, and thus the light emitting device can also have the beneficial technical effects corresponding to the beneficial techniques of the light emitting substrate, which will not be described herein again.

[0137] For example, as shown in FIG. 11, the first light emitting device 1101 and the second light emitting device 1102 can be surrounded by the partition structure 211, and at this time, the third light emitting device 1103 can not need to be surrounded by the partition structure. Of course, the embodiments of the present disclosure do not limit this. For example, the third light emitting device can also be surrounded by the partition structure to better solve the crosstalk problem.

[0138] For example, the light emitting device layer can further include a pixel definition layer disposed on the side of the driving circuit layer away from the substrate substrate. For example, the partition structure can be disposed on the side of the pixel definition layer away from the substrate substrate. The embodiments of the present disclosure do not limit the specific structure of the partition structure.

[0139] It should be noted that the display substrate according to the embodiments of the present disclosure is not limited to the specific embodiments described above. The display substrate according to the embodiments of the present disclosure can include the same structure as the light emitting substrate according to any embodiment of the present disclosure except for the driving circuit layer, and therefore the above description of the light emitting substrate also applies to the display substrate, which will not be repeated here.

[0140] The embodiments of the present disclosure also provide a display device. FIG. 12A is a schematic diagram of a display device according to an embodiment of the present disclosure. As shown in FIG. 12A, the display device 300 includes any of the light emitting substrates 100 described above, so that the display device 300 has the beneficial effects corresponding to the beneficial effects of the light emitting substrate 100, which will not be repeated here.

[0141] FIG. 12B is a schematic diagram of another display device according to an embodiment of the present disclosure. As shown in FIG. 12B, the display device 300 includes any of the display substrates 200 described above, so that the display device 300 has the beneficial effects corresponding to the beneficial effects of the display substrate 200, which will not be repeated here.

[0142] For example, the display device can be any product or component with display function such as a television, a notebook computer, a tablet computer, a mobile phone, a navigation device, a wearable device, a virtual reality device, etc.

[0143] The following points need to be explained:

[0144] (1) In the drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are involved, and other structures can be referred to the general design.

[0145] (2) In the case of no conflict, the features in the same and different embodiments of the present disclosure can be combined with each other.

[0146] The above merely describes specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical scope disclosed by the present disclosure, which should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A light-emitting substrate, comprising a plurality of light-emitting devices arranged in an array, wherein, The plurality of light-emitting devices includes a first light-emitting device and a second light-emitting device; The first light-emitting device and the second light-emitting device each include: First electrode; Second electrode; The first light-emitting unit is located between the first electrode and the second electrode; The second light-emitting unit is located between the first light-emitting unit and the second electrode; and A charge generation layer is located between the first light-emitting unit and the second light-emitting unit. In this configuration, the first and second light-emitting units of the first light-emitting device are configured to emit light of the same color; the first and second light-emitting units of the second light-emitting device are configured to emit light of the same color; and the first and second light-emitting devices are arranged adjacent to each other and configured to emit light of different colors. The distance between the surface of the charge-generating layer away from the first electrode and the surface of the first electrode near the charge-generating layer is the top height of the charge-generating layer. The ratio of the top height of the charge generation layer of the first light-emitting device to the top height of the charge generation layer of the second light-emitting device ranges from 0.85 to 1.

15.

2. The light-emitting substrate according to claim 1, wherein, The wavelength of the light emitted by the first light-emitting device is greater than the wavelength of the light emitted by the second light-emitting device. The first light-emitting unit includes multiple film layers, and at least one of the multiple film layers of the first light-emitting unit of the first light-emitting device has a refractive index greater than the refractive index of the corresponding film layer of the first light-emitting unit of the second light-emitting device.

3. The light-emitting substrate according to claim 1, wherein, The top height of the charge generation layer of the first light-emitting device is equal to the top height of the charge generation layer of the second light-emitting device.

4. The light-emitting substrate according to claim 1, wherein, The absolute value of the difference between the top height of the charge generation layer of the first light-emitting device and the top height of the charge generation layer of the second light-emitting device is not greater than 15 nm.

5. The light-emitting substrate according to claim 1, wherein, The first light-emitting unit includes a first light-emitting layer, and the distance between the surface of the first light-emitting layer away from the first electrode and the surface of the first electrode near the first light-emitting layer is the top height of the first light-emitting layer. The ratio of the top height of the first light-emitting layer of the first light-emitting device to the top height of the first light-emitting layer of the second light-emitting device ranges from 0.85 to 1.

15.

6. The light-emitting substrate according to claim 5, wherein, The top height of the first light-emitting layer of the first light-emitting device is equal to the top height of the first light-emitting layer of the second light-emitting device.

7. The light-emitting substrate according to claim 6, wherein, The absolute value of the difference between the top height of the first light-emitting layer of the first light-emitting device and the top height of the first light-emitting layer of the second light-emitting device ranges from 0 to 15 nm.

8. The light-emitting substrate according to any one of claims 5-7, wherein, The first light-emitting unit further includes a first adjustment layer located on the side of the first light-emitting layer near the first electrode, and the second light-emitting unit includes a second light-emitting layer and a second adjustment layer located on the side of the second light-emitting layer near the charge-generating layer. The wavelength of the light emitted by the first light-emitting device is greater than the wavelength of the light emitted by the second light-emitting device.

9. The light-emitting substrate according to claim 8, wherein, The thickness of the first light-emitting layer of the first light-emitting device is less than the thickness of the second light-emitting layer of the first light-emitting device, and / or The thickness of the first adjustment layer of the first light-emitting device is less than the thickness of the second adjustment layer of the first light-emitting device.

10. The light-emitting substrate according to claim 9, wherein, The sum of the thicknesses of the first light-emitting layer and the first adjustment layer of the first light-emitting device is less than the sum of the thicknesses of the second light-emitting layer and the second adjustment layer of the first light-emitting device.

11. The light-emitting substrate according to claim 8, wherein, The thickness of the first light-emitting layer of the second light-emitting device is greater than or equal to the thickness of the second light-emitting layer of the second light-emitting device.

12. The light-emitting substrate according to claim 11, wherein, The sum of the thicknesses of the first light-emitting layer and the first adjustment layer of the second light-emitting device is less than the sum of the thicknesses of the second light-emitting layer and the second adjustment layer of the second light-emitting device.

13. The light-emitting substrate according to any one of claims 8-12, wherein, The thickness of the first light-emitting layer of the first light-emitting device is less than the thickness of the first light-emitting layer of the second light-emitting device.

14. The light-emitting substrate according to any one of claims 8-13, wherein, The thickness of the second light-emitting layer of the first light-emitting device is greater than the thickness of the second light-emitting layer of the second light-emitting device, and / or The thickness of the second adjustment layer of the first light-emitting device is greater than the thickness of the second adjustment layer of the second light-emitting device.

15. The light-emitting substrate according to any one of claims 8-14, wherein, The refractive index of the first light-emitting layer of the first light-emitting device is greater than the refractive index of the first light-emitting layer of the second light-emitting device, and / or The refractive index of the first adjustment layer of the first light-emitting device is greater than the refractive index of the first adjustment layer of the second light-emitting device.

16. The light-emitting substrate according to any one of claims 1-15, wherein, The plurality of light-emitting devices further includes a third light-emitting device, which includes a first electrode, a second electrode, a first light-emitting unit located between the first electrode and the second electrode, a second light-emitting unit located between the first light-emitting unit and the second electrode, and a charge-generating layer located between the first light-emitting unit and the second light-emitting unit. The first light-emitting unit and the second light-emitting unit of the third light-emitting device are configured to emit light of the same color; the third light-emitting device is configured to emit light of a different color than the first light-emitting device and the second light-emitting device, and the third light-emitting device is disposed adjacent to at least one of the first light-emitting device and the second light-emitting device. The top height of the charge generation layer of the first light-emitting device, the top height of the charge generation layer of the second light-emitting device, and the top height of the charge generation layer of the third light-emitting device are all equal.

17. The light-emitting substrate according to claim 16, wherein, The top height of the first light-emitting layer of the first light-emitting device, the top height of the first light-emitting layer of the second light-emitting device, and the top height of the first light-emitting layer of the third light-emitting device are all equal.

18. The light-emitting substrate according to any one of claims 1-15, wherein, The plurality of light-emitting devices further includes a third light-emitting device. The third light-emitting device includes a first electrode, a second electrode, a first light-emitting unit located between the first electrode and the second electrode, a second light-emitting unit located between the first light-emitting unit and the second electrode, and a charge-generating layer located between the first light-emitting unit and the second light-emitting unit. The first light-emitting unit and the second light-emitting unit of the third light-emitting device are configured to emit light of the same color; the first light-emitting device is configured to emit red light, the second light-emitting device is configured to emit green light, and the third light-emitting device is configured to emit blue light. The distance between the surface of the first light-emitting layer of the first light-emitting unit near the first electrode and the surface of the first electrode near the first light-emitting layer is a first distance. The first distance of the first light-emitting device ranges from 35nm to 50nm, the first distance of the second light-emitting device ranges from 35nm to 50nm, and the first distance of the third light-emitting device ranges from 25nm to 40nm.

19. The light-emitting substrate according to claim 18, wherein, The distance between the surface of the second light-emitting layer of the second light-emitting unit near the first electrode and the surface of the first electrode near the second light-emitting layer is the second distance. The second distance of the first light-emitting device ranges from 180nm to 200nm, the second distance of the second light-emitting device ranges from 140nm to 165nm, and the second distance of the third light-emitting device ranges from 105nm to 125nm.

20. The light-emitting substrate according to any one of claims 8-15, wherein, The first adjustment layer includes at least one of an electron blocking layer or a hole transport layer, and the second adjustment layer includes at least one of an electron blocking layer or a hole transport layer.

21. The light-emitting substrate according to any one of claims 1-20, wherein, The charge generation layer includes a p-type charge generation layer and an n-type charge generation layer stacked together, with the p-type charge generation layer located between the n-type charge generation layer and the second light-emitting unit. The n-type charge generation layer is doped with a first metal atom, and the doping ratio of the first metal atom ranges from 0.5% to 10%. The thickness of the n-type charge generation layer ranges from 5 nm to 50 nm.

22. The light-emitting substrate according to claim 21, wherein, The doping ratio of the first metal atom ranges from 1% to 5%, and the thickness of the n-type charge generation layer ranges from 5nm to 20nm.

23. The light-emitting substrate according to any one of claims 1-22, wherein, The second light-emitting unit also includes an electron injection layer. The electron-injected layer comprises an organic host material and second metal atoms doped within the organic host material, wherein the doping ratio of the second metal atoms ranges from 0.5% to 10%. The thickness of the electron injection layer ranges from 5nm to 50nm.

24. The light-emitting substrate according to claim 23, wherein, The doping ratio of the second metal atom ranges from 1% to 7%. The thickness of the electron injection layer ranges from 5nm to 30nm.

25. The light-emitting substrate according to any one of claims 1-24, further comprising a partition structure disposed around the light-emitting device to at least isolate the charge-generating layers of adjacent light-emitting devices from each other.

26. A display substrate, comprising: Substrate; A driving circuit layer is disposed on the substrate. as well as A light-emitting device layer is disposed on the side of the driving circuit layer away from the substrate. The light-emitting device layer includes multiple light-emitting devices arranged in an array and multiple isolation structures, and the driving circuit layer is configured to drive the light-emitting devices to emit light. The plurality of light-emitting devices includes a first light-emitting device and a second light-emitting device; the first light-emitting device and the second light-emitting device each include: First electrode; Second electrode; The first light-emitting unit is located between the first electrode and the second electrode; The second light-emitting unit is located between the first light-emitting unit and the second electrode; and A charge generation layer is located between the first light-emitting unit and the second light-emitting unit. In this configuration, the first and second light-emitting units of the first light-emitting device are configured to emit light of the same color, and the first and second light-emitting units of the second light-emitting device are configured to emit light of the same color. The first and second light-emitting devices are arranged adjacent to each other and configured to emit light of different colors. The partition structure is arranged around the light-emitting devices to at least isolate the charge-generating layers of adjacent light-emitting devices from each other. The distance between the surface of the charge-generating layer away from the first electrode and the surface of the first electrode near the charge-generating layer is the top height of the charge-generating layer. The ratio of the top height of the charge generation layer of the first light-emitting device to the top height of the charge generation layer of the second light-emitting device ranges from 0.85 to 1.

15.

27. A display device comprising a light-emitting substrate according to any one of claims 1-25, or comprising a display substrate according to claim 26.

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