Radiation detector and medical apparatus

Abstract

The invention relates to the technical field of medical equipment, and discloses a radioactive ray detector and medical equipment. The radiation detector includes: an integrated circuit, one side of which is provided with a plurality of pads, the plurality of pads being spaced apart from each other; the conversion layer comprises a plurality of pixel electrodes, the plurality of pixel electrodes are arranged on one side, close to the plurality of bonding pads, of the conversion layer, the plurality of pixel electrodes and the plurality of bonding pads are correspondingly arranged, the plurality of pixel electrodes are divided into a plurality of pixel electrode plate groups, and the sizes of the pixel electrodes between at least two pixel electrode plate groups in the plurality of pixel electrode plate groups are different; under the condition that each pixel electrode is connected with the corresponding bonding pad, the distance between each bonding pad and the edge of the corresponding pixel electrode is larger than a preset distance. According to the scheme provided by the invention, by adjusting the size of the pixel electrode between the at least two pixel electrode slice groups in the radioactive ray detector, the welding quality of the integrated circuit and the conversion layer can be effectively ensured, and the detection efficiency of the radioactive ray detector is improved.

Description

[0001] Related Description The application claims priority from Chinese Patent Application No. 202511394737.0, filed on September 26, 2025, and entitled "Radiation Detector and Medical Equipment". TECHNICAL FIELD

[0002] The present application relates to the technical field of medical equipment, and in particular to a radiation detector and a medical equipment. BACKGROUND

[0003] In computed tomography (CT), angiography or radiography, radiation that has passed through the human body is collected by a detector, and a diagnostic image is usually generated by an algorithm for reconstructing data collected by the detector after X-rays have passed through the human body. Current detectors are mainly divided into indirect conversion radiation detectors and counting type direct conversion radiation detectors. The indirect conversion radiation detector adopts a separate pixel array shape detector of a scintillator. The counting type direct conversion radiation detector often uses semiconductor materials such as CZT (cadmium zinc telluride, CdZnTe). These materials are usually not pixelized cut, but are divided into cells by setting electrodes at the bottom to achieve a pixel-like acquisition effect. However, when the electrodes at the bottom are connected (such as welding) with other components of the detector, due to the structural limitations of the other components, the connection effect between the other components and the electrodes is not good, resulting in low sensitivity of the pixel electrodes, thereby affecting the detection efficiency and detection quality of the detector. SUMMARY

[0004] Embodiments of the present application aim to at least partially solve one of the technical problems in the related art. To this end, the embodiments of the present application propose a radiation detector and a medical equipment.

[0005] The embodiments of the present application provide a radiation detector, comprising: an integrated circuit, one side of the integrated circuit is provided with a plurality of pads, the plurality of pads are different in spacing; a conversion layer, comprising a plurality of pixel electrodes, the plurality of pixel electrodes are arranged on one side of the conversion layer close to the plurality of pads, the plurality of pixel electrodes are arranged correspondingly to the plurality of pads, the plurality of pixel electrodes are divided into a plurality of pixel electrode groups, the size of the pixel electrodes between at least two pixel electrode groups in the plurality of pixel electrode groups is different, and the spacing between each pad and the edge of the corresponding pixel electrode is greater than a preset spacing when each pixel electrode is connected to the corresponding pad.

[0006] In some embodiments, the plurality of pixel electrodes are distributed along a layer-thickness direction and a channel direction, the layer-thickness direction and the channel direction are perpendicular to each other, the pixel electrodes between at least two pixel electrode groups are different in size in at least one of the layer-thickness direction and the channel direction, and the area difference between the pixel electrodes between the at least two pixel electrode groups is less than a preset difference value.

[0007] In some embodiments, the pixel electrodes between at least two pixel electrode groups are different in size in the channel direction, the size difference in the channel direction determines the area difference.

[0008] In some embodiments, the pixel electrodes between at least two pixel electrode groups are different in size in the layer-thickness direction, the pixel electrodes between at least two pixel electrode groups are different in size in the channel direction, and the size difference in the layer-thickness direction and the size difference in the channel direction together determine the area difference.

[0009] In some embodiments, the plurality of pixel electrodes are divided into M×N pixel electrode groups, M corresponds to the layer-thickness direction, and N corresponds to the channel direction, n groups are selected from the N groups, the pixel electrodes in each of the n groups are different in size in the channel direction from the pixel electrodes in each of the N-n groups, and in the case of N≥12, 4≤n≤12.

[0010] In some embodiments, the preset interval is 50 μm.

[0011] In some embodiments, the first intervals of the plurality of pixel electrode groups in the layer-thickness direction are the same, and the second intervals of the pixel electrodes in each pixel electrode group in the layer-thickness direction are the same; the third intervals of the plurality of pixel electrode groups in the channel direction are the same, and the fourth intervals of the pixel electrodes in each pixel electrode group in the channel direction are the same.

[0012] In some embodiments, the second intervals of the pixel electrodes in different pixel electrode groups in the layer-thickness direction are the same, and the fourth intervals of the pixel electrodes in different pixel electrode groups in the channel direction are the same.

[0013] In some embodiments, the first interval is 3-6 times the second interval, and the third interval is 3-6 times the fourth interval.

[0014] In some embodiments, the conversion layer has a first side and a second side disposed oppositely, and the plurality of pixel electrodes are disposed on the second side; the radiation detector further comprises a scatter rejection grid disposed close to the first side, the scatter rejection grid comprising a plurality of scatter rejection channels corresponding to the plurality of pixel electrode groups, and in the extension direction of the scatter rejection channels, any pixel electrode group is projected on the second side within the projection range of the scatter rejection channel on the second side.

[0015] In some embodiments, the spacing between any two adjacent pixel electrode groups is a fifth spacing, and in the extension direction of the scatter rejection channels, the grid wall of the scatter rejection channels is aligned with the fifth spacing, and the wall thickness of the grid wall is less than or equal to the fifth spacing.

[0016] In some embodiments, the radiation detector is a counting type direct conversion radiation detector.

[0017] Embodiments of the present application provide a medical device comprising the radiation detector described in any one of the above. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 A schematic diagram of a scatter rejection grid provided by an embodiment of the present application; Figure 2 A schematic diagram of grouping of pixel electrodes provided by an embodiment of the present application; Figure 3 A schematic diagram of a radiation detector provided by an embodiment of the present application; Figure 4 A partial schematic diagram of a radiation detector provided by an embodiment of the present application; Figure 5 A partial schematic diagram of a plurality of pixel electrode groups provided by an embodiment of the present application; Figure 6 A size schematic diagram of a plurality of pixel electrode groups provided by an embodiment of the present application. DETAILED DESCRIPTION

[0019] Embodiments of the present application are described in detail below with reference to the accompanying drawings, examples of which are shown in the drawings, wherein the same or similar notations represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain the present application, and cannot be understood as limiting the present application.

[0020] In computed tomography (CT), angiography or radiography, the radiation passing through the human body is collected by the detector, and the data is usually collected by the detector after the X-ray penetrates the human body, and a diagnostic image is generated by a reconstruction algorithm. Current detectors are mainly divided into indirect conversion radiation detectors and counting type direct conversion radiation detectors.

[0021] Indirect conversion radiation detectors usually employ a separate pixel array of scintillators; while counting direct conversion radiation detectors often use CZT (cadmium zinc telluride, CdZnTe), CdTe (cadmium telluride), CdZnTeSe (cadmium zinc telluride selenium), CdTeSe (cadmium telluride selenium), Si (silicon) or other materials. These materials are not physically pixelated, but are divided into unit cells by an array of electrodes at their bottom, thus achieving a pixel-like signal acquisition effect. For ease of understanding, the following will describe the pixel electrode design of the conversion layer, taking CZT as the main material of the conversion layer. It should be noted that the conversion layer converts radiation signals into electrical signals, so it is often referred to as a "photoelectric conversion layer", "signal conversion layer", "PCD (Photon Counting Detector) array layer" or "sensing layer" in different documents, and also as a "crystal layer" according to its structure.

[0022] Figure 1 A schematic diagram of the scatter suppression grid provided by an embodiment of the present application.

[0023] As shown in Figure 1 , in the process of X-rays propagating from the focal point of the radiation source to the radiation detector, the image quality will be affected by the scattering phenomenon. In order to reduce the influence of scattering, a scatter suppression grid 110 is usually arranged between the radiation detector and the radiation source, and the scatter suppression grid 110 is usually arranged above the radiation detector. The scatter suppression grid 110 includes a scatter suppression channel 111 and a grid wall 112, i.e. the grid wall 112 encloses the scatter suppression channel 111.

[0024] In some embodiments, in an indirect conversion radiation detector, the scatter suppression channels 111 (unit cells) of the scatter suppression grid 110 are usually arranged in a one-to-one corresponding manner with the pixel electrodes of the indirect conversion radiation detector. For example, an indirect conversion radiation detector with a 16x32 pixel array usually has a scatter suppression grid 110 containing 16x32 scatter suppression channels 111 (unit cells), and each independent pixel electrode in the indirect conversion radiation detector has the same size, and each scatter suppression channel 111 (unit cell) of the scatter suppression grid 110 has the same size.

[0025] In some embodiments, in a counting type direct conversion radiation detector, in order to improve the image resolution, the pixel size is usually designed to be very small, for example, 0.25mm*0.25mm or 0.5mm*0.5mm. At this time, if the CZT material of the conversion layer itself is cut into independent small pixels, it will cause the manufacturing cost to be too high and the scrap rate to rise sharply, and it is difficult to realize mass production. Therefore, the CZT material itself can not be physically cut, and a square electrode array is made at the bottom of the conversion layer, and the unit cells are divided by the electrodes, so as to realize the pixelization acquisition effect similar to the pixelization of the scintillator.

[0026] Figure 2 The schematic diagram of grouping of the pixel electrodes provided by an embodiment of the present application is shown.

[0027] Figure 2 An example of making a square electrode array at the bottom of the conversion layer and dividing unit cells by the electrodes is shown. If the suppression scattering channels of the suppression scattering grid and the pixel electrodes of the radiation detector are still set in a one-to-one manner, due to the extremely small size of the pixel electrodes, the grid wall of each suppression scattering channel in the suppression scattering grid will occupy too large an area, block the rays from the pixel electrodes, and seriously block the useful rays, thereby significantly reducing the acquisition efficiency of the radiation detector. To solve this problem, as shown in Figure 2 several adjacent pixel electrodes can be grouped into a group, and a plurality of pixel electrode groups 131A are obtained, and the plurality of pixel electrodes in each pixel electrode group 131A share one suppression scattering channel of the suppression scattering grid, and the grid wall of the suppression scattering grid can be aligned with the spacing between the plurality of pixel electrode groups, so as to reduce the area of the grid wall of the suppression scattering channel, avoid the grid wall from blocking too many useful rays, and improve the acquisition efficiency of the radiation detector.

[0028] In order to count the photons excited by the X-rays passing through the conversion layer, a photon counting integrated circuit needs to be configured below the pixel electrodes of the conversion layer. The integrated circuit is provided with pads corresponding to the pixel electrodes one by one, and is connected to the pixel electrodes through the pads. Therefore, the welding quality between the pixel electrodes and the pads is particularly important, and the welding quality directly affects the detection efficiency and detection quality of the radiation detector.

[0029] However, due to the limitations of the processing technology and circuit structure of the integrated circuit itself, the spacing between the plurality of pads is usually different, that is, the plurality of pads are not uniformly and equidistantly arranged. If the sizes of all the pixel electrodes are the same, the order of the plurality of pixel electrodes is usually in order, and there will be some deviation between some pads and the pixel electrodes when all the pixel electrodes are connected to the corresponding plurality of pads, for example, some pads are not at the center of the pixel electrodes, but too close to the edges of the pixel electrodes, resulting in low welding quality of the pixel electrodes, thereby affecting the pixel sensitivity.

[0030] The following describes the radiation detector 100 according to the embodiments of the present application in detail. Figure 3 Figure 6 The following describes the radiation detector 100 according to the embodiments of the present application in detail.

[0031] Referring to Figure 3 Figure 6 As shown in the figure, the radiation detector according to the embodiments of the present application is a counting type direct conversion radiation detector, and the radiation detector 100 can include a conversion layer 130 and an integrated circuit (photon counting integrated circuit) 140. The conversion layer includes a semiconductor layer and a plurality of pixel electrodes arranged on one side of the semiconductor layer, and the semiconductor layer is made of CZT (cadmium zinc telluride, CdZnTe), CdTe, CdZnTeSe, CdTeSe, Si or other materials. The present application describes CZT as the main material of the conversion layer.

[0032] In an embodiment, as Figure 3 shown, the radiation detector 100 provided by the present embodiment can further include a scatter suppression grid 110, a high voltage film 120 and a control circuit board 150. The scatter suppression grid 110 includes a scatter suppression channel 111 and a grid wall 112.

[0033] Exemplarily, as Figure 3 shown, the conversion layer 130 is connected with the integrated circuit 140, and the integrated circuit 140 performs statistics on the collected photons. The integrated circuit 140 is connected with the control circuit board 150 below, and the control circuit board 150 provides power supply for the integrated circuit and performs control and data transmission. The high voltage film 120 is arranged on the upper surface of the conversion layer 130, and the high voltage film 120 can become a cathode. The conversion layer 130 includes a plurality of pixel electrodes 131, and the plurality of pixel electrodes 131 are arranged on the lower surface of the conversion layer 130. The pixel electrodes 131 can be anodes. The high voltage film 120 can be a high voltage electrode plate, and the pixel electrodes 131 can be low voltage electrode plates. A voltage of 800 volts to 1000 volts can be applied between the high voltage film 120 and the pixel electrodes 131, and the potential difference between the high voltage film 120 and the pixel electrodes 131 causes the electrons generated by the conversion layer 130 to run in the direction of the pixel electrodes 131.

[0034] The scatter suppression grid 110 is arranged above the high voltage film 120, and the grid wall 112 of the scatter suppression grid 110 can be made of tungsten or molybdenum or other high radiation attenuation materials with a thickness of about 0.1 mm. The grid wall 112 extends along the height direction and converges at a point, which is the focal point of the radiation source of the medical equipment. Correspondingly, the grid wall 112 of the scatter suppression grid 110 is determined according to the width projected from the focal point to the surface of the conversion layer 130 to determine the influence of the pixel shielding of the conversion layer 130.

[0035] In an example, the high-voltage film 120 includes a conductive layer and an insulating layer on a side of the conductive layer away from the conversion layer 130. In another example, the high-voltage film 120 includes only a conductive layer, and an insulating gap is provided between the high-voltage film 120 and the scattering suppression grid 110.

[0036] In an embodiment, as shown in Figure 4 and Figure 5 The integrated circuit 140 can include a plurality of pads 141, i.e., a side of the integrated circuit 140 is provided with a plurality of pads 141, and the plurality of pads 141 have different intervals. The conversion layer 130 includes a plurality of pixel electrodes 131, which are provided on a side of the conversion layer 130 close to the plurality of pads 141, and the plurality of pixel electrodes 131 are provided in correspondence with the plurality of pads 141. The plurality of pads 141 have different intervals, which means that the interval between at least two adjacent pads 141 is different from the interval between other adjacent pads 141. For example, the plurality of pads 141 are divided into a plurality of rows and a plurality of columns, and the intervals between rows are the same, the intervals between columns are different, or the intervals between rows are different, the intervals between columns are the same, or the intervals between rows and columns are different. The intervals between rows are different means that the interval between at least one adjacent row is different from the interval between other adjacent rows, and the intervals between columns are different means that the interval between at least one adjacent column is different from the interval between other adjacent columns.

[0037] As shown in Figure 5 and Figure 6 The plurality of pixel electrodes 131 are divided into a plurality of pixel electrode groups 131B (one pixel electrode group 131B includes, for example, 6x3 pixel electrodes), and the size of the pixel electrodes 131 between at least two pixel electrode groups 131B is different. In the case where each pixel electrode 131 is connected to a corresponding pad 141, the interval between each pad 141 and the edge of the corresponding pixel electrode 131 is greater than a preset interval.

[0038] In another embodiment, as shown in Figure 5 The size of each pixel electrode 131 can be (150μm~700μm)x(150μm~700μm), for example, 250μm x 250μm or 500μm x 500μm. The interval between each pad 141 and the edge of the corresponding pixel electrode 131 is greater than a preset interval, which can also be referred to as a safety distance. The preset interval is, for example, 50μm, as shown in Figure 5As shown, the spacing between each pad 141 and the edge of the corresponding pixel electrode 131 is, for example, 52 μm or 58 μm, that is, in the case where the pad spacings are different, the size of the pixel electrode 131 in at least two pixel electrode sheet groups 131B is adjusted so that all pads 141 are as close as possible to the center of all corresponding pixel electrodes 131, thereby improving the welding effect of the pads 141 and the pixel electrodes 131 and improving the pixel sensitivity.

[0039] In another embodiment, according to the radiographic detector 100 provided by the embodiments of the present application, each pixel electrode sheet group 131B includes a plurality of pixel electrodes 131 arranged at intervals and having the same size, and the sizes of the pixel electrodes 131 in different pixel electrode sheet groups 131B can be different, that is, the sizes of the pixel electrodes 131 in the same group are the same, and the sizes of the pixel electrodes 131 in different groups can be different. Such pixel electrode 131 sizes are simple and facilitate production and manufacturing, and are conducive to improving the production efficiency of the radiographic detector 100.

[0040] In an embodiment, as shown in Figure 6 The plurality of pixel electrodes 131 are distributed along the layer thickness direction Z and the channel direction X, the layer thickness direction Z and the channel direction X are perpendicular to each other, the sizes of the pixel electrodes 131 in at least two pixel electrode sheet groups 131B in at least one of the layer thickness direction Z and the channel direction X are different, and the area difference of the pixel electrodes 131 between at least two pixel electrode sheet groups 131B is less than a preset difference value. In an example, the area difference of the pixel electrodes 131 between all pixel electrode sheet groups 131B is less than a preset difference value.

[0041] As shown in Figure 6 , Figure 6 It is shown that there are 4 rows and 12 columns of pixel electrode sheet groups 131B, that is, a total of 48 pixel electrode sheet groups 131B.

[0042] In an example, the sizes of the pixel electrodes in at least two of the 48 pixel electrode sheet groups 131B are different. For example, the size of all pixel electrodes in a first of the two pixel electrode sheet groups 131B is 500 μm (layer thickness direction Z) x 500 μm (channel direction X), the size of all pixel electrodes in a second of the two pixel electrode sheet groups 131B is 500 μm (layer thickness direction Z) x 450 μm (different size in the channel direction X), 450 μm (different size in the layer thickness direction Z) x 500 μm (channel direction X), or 450 μm (different size in the layer thickness direction Z) x 450 μm (different size in the channel direction X).

[0043] In another example, the size of the pixel electrodes in the pixel electrode groups 131B in at least two columns of the 12 columns is different. For example, the size of all the pixel electrodes in the 4 pixel electrode groups 131B in a first column of the two columns is 500 μm x 500 μm, and the size of all the pixel electrodes in the 4 pixel electrode groups 131B in a second column of the two columns is 500 μm x 450 μm. In some examples, there can be at least 4 columns of pixel electrodes with different sizes. In order to reduce the processing difficulty of the pixel electrodes, the size of the different pixel electrodes can be set in units of columns. In some cases, the pixel sensitivity in the layer thickness direction Z is higher, so the size of the different pixel electrode groups 131B in the channel direction X is adjusted first, that is, the size of the different pixel electrodes can be set in units of columns, for example, the size of all the pixel electrodes in the first column is 500 μm x 500 μm, and the size of all the pixel electrodes in the second column is 500 μm x 450 μm, so that the size of the two columns in the channel direction X is different. Figure 6 Such an example is shown.

[0044] In another example, the size of the pixel electrodes in the pixel electrode groups 131B in at least two rows of the 4 rows is different. For example, the size of all the pixel electrodes in the 12 pixel electrode groups 131B in a first row of the two rows is 500 μm x 500 μm, and the size of all the pixel electrodes in the 12 pixel electrode groups 131B in a second row of the two rows is 450 μm x 500 μm, so that the size of the two rows in the Z direction is different. In order to reduce the processing difficulty of the pixel electrodes, the size of the different pixel electrodes can be set in units of rows.

[0045] For example, the distance between each pad 141 and the edge of the corresponding pixel electrode 131 is greater than 50 μm, for example, as a basic principle to keep the edge of the pad 141 of the integrated circuit 140 after alignment welding within the pixel electrode 131 and a certain safety distance from the edge of the pixel electrode 131.

[0046] In one example, if all positional deviation compensation is concentrated only within two sets of pixel electrode groups 131B, it can easily lead to a difference in area between the pixel electrodes 131 of these two sets of pixel electrode groups 131B and other groups exceeding a preset difference value, resulting in inconsistent pixel sensitivity of the pixel electrodes exceeding the preset difference value. Therefore, multiple groups can be selected for size adjustment. For example, if the size of the pixel electrodes in all groups is 500μm×500μm before adjustment, at least four groups can be selected for pixel electrode size adjustment. For example, for the channel direction X, at least four groups can be selected from 12 groups in each row for size adjustment. The at least four groups selected in each row can be located in the same column (i.e., the column positions corresponding to the selected columns in each row are the same). The adjusted pixel size is, for example, 500μm×450μm, 450μm×500μm, or 480μm×480μm, etc. That is, the size of the pixel electrode in the layer thickness direction Z, the size in the channel direction X, or the size in the layer thickness direction Z and the size in the channel direction X can be adjusted. Priority is given to adjusting the size in the channel direction X of different pixel electrode groups.

[0047] In another embodiment, the preset difference value is, for example, 10%, and the area difference between the adjusted set of pixel electrode sheets 131B and other unadjusted pixel electrode sheets 131B is less than 10%.

[0048] In another embodiment, the pixel electrodes 131 between at least two pixel electrode groups 131B have the same size in the layer thickness direction Z, and the pixel electrodes 131 between at least two pixel electrode groups 131B have different sizes in the channel direction X. The size difference of the pixel electrodes 131 between at least two pixel electrode groups 131B in the channel direction X determines the area difference. In other words, at least two pixel electrode groups 131B are selected from a plurality of pixel electrode groups 131B, and the size of the selected pixel electrode groups 131B in the channel direction X is adjusted to be different to fit the pad 141.

[0049] For example, such as Figure 6 As shown, multiple pixel electrodes 131 are divided into multiple pixel electrode groups 131B, and the pixel electrodes 131 are arranged closely within each pixel electrode group 131B.

[0050] In another embodiment, such as Figure 6 As shown, the multiple pixel electrode groups 131B have the same first spacing ZG2 in the layer thickness direction Z, and the pixel electrodes 131 within each pixel electrode group 131B have the same second spacing ZG1 in the layer thickness direction Z. The multiple pixel electrode groups 131B have the same third spacing XG2 in the channel direction X, and the pixel electrodes within each pixel electrode group have the same fourth spacing XG1 in the channel direction X.

[0051] In another embodiment, the second spacing ZG1 of each pixel electrode in different pixel electrode groups is the same in the layer thickness direction Z, and the fourth spacing XG1 of each pixel electrode in different pixel electrode groups is the same in the channel direction X.

[0052] In another embodiment, the first spacing ZG2 is 3-6 times the second spacing ZG1, and the third spacing XG2 is 3-6 times the fourth spacing XG1.

[0053] For example, in the layer thickness direction Z, the size Z1 of each pixel electrode 131 is the same, the spacing ZG1 between the pixel electrodes 131 in each group of pixel electrode sheets 131B is consistent, and the size is usually 30μm to 60μm. The spacing ZG2 between each group of pixel electrode sheets 131B is consistent, and the size of ZG2 is 3 to 6 times the size of ZG1. This enables high-density integration of signal acquisition in multiple pixel electrode sheets 131B.

[0054] For example, in the channel direction X, the spacing XG1 of the pixel electrodes 131 in each group of pixel electrode sheets 131B is consistent and the size is usually 30μm to 60μm, and the spacing XG2 between each group of pixel electrode sheets 131B is consistent, with the size of XG2 being 3 to 6 times that of XG1.

[0055] The pixel electrodes 131 in each pixel electrode group 131B have the same size in the channel direction X. However, the pixel electrodes 131 in each pixel electrode group 131B cannot be completely identical in size to the pixel electrodes 131 in other groups. They need to be adjusted based on the position of the pads 141 of the integrated circuit 140 to ensure that the edge of the pads 141 is within the pixel electrode 131 and has a certain safe distance from the edge of the pixel electrode 131 after alignment.

[0056] For example, in the radiation detector 100 provided in this application, in order to ensure the consistency of signal response in the layer thickness direction Z, at least two pixel electrode groups 131B (when there are multiple rows, at least two pixel electrode groups 131B are at least two pixel electrode groups 131B in each row, and can further be at least two column pixel electrode groups 131B) adopt a design strategy of differentiated size.

[0057] like Figure 6 As shown, when the layer thickness direction Z has high requirements for pixel sensitivity, the pixel electrodes 131 of all pixel electrode groups 131B maintain the same size Z1 in the layer thickness direction Z, while the size in the channel direction X (e.g., ...) remains the same. Figure 6The difference in size allows for different designs. The design maintains the uniformity of the pixel sensitivity in the layer thickness direction Z by fixing the Z dimension of the layer thickness direction, ensuring the consistency of the ray penetration depth and the charge collection efficiency of all the pixels, thereby avoiding signal response deviation caused by the size fluctuation in the layer thickness direction Z.

[0058] For example, when the size of each pixel electrode 131 in one group of pixel electrode groups 131B is 1x1 (for ease of illustration, an example of unit size), and the size of each pixel electrode 131 in another group is 1x0.9, the size difference of the pixel electrodes 131 in the channel direction X is 10%, and the corresponding area difference is also 10%. This difference changes the geometric layout of the pixels, but by strictly controlling the size of the pixel electrode groups 131B in the layer thickness direction Z, the impact on the pixel sensitivity in the layer thickness direction Z is reduced.

[0059] Through the embodiments provided in the present application, by maintaining the consistency of the electric field distribution in the layer thickness direction Z and the charge collection characteristics, by fine-tuning the size in the channel direction X, the mounting tolerance of the scatter grid 110 is adapted while ensuring the welding quality between the conversion layer 130 and the integrated circuit 140 and the pixel sensitivity.

[0060] In addition, the area difference of the pixel electrodes is associated with the imaging quality. Generally, the larger the area difference, the higher the degree of imaging artifacts, and the lower the imaging quality. Therefore, by controlling the area difference of all the pixel electrode groups 131B within a limited range, the generation of image artifacts is avoided, and the freedom and engineering adaptability of the overall layout of the radiation detector 100 are improved.

[0061] In another example, the size of the pixel electrodes 131 in the channel direction X between at least two pixel electrode groups 131B is the same, the size of the pixel electrodes 131 in the layer thickness direction Z between at least two pixel electrode groups 131B is different, and the size difference of the pixel electrodes 131 in the layer thickness direction Z between at least two pixel electrode groups 131B determines the area difference. Similar to the above example, details are not repeated here.

[0062] In another embodiment, the size of the pixel electrodes 131 in the layer thickness direction Z between at least two pixel electrode groups 131B is different, and the size of the pixel electrodes 131 in the channel direction X between at least two pixel electrode groups 131B is different. The size difference of the pixel electrodes 131 in the layer thickness direction Z between at least two pixel electrode groups 131B and the size difference in the channel direction jointly determine the area difference.

[0063] Exemplarily, the size of the pixel electrode 131 in one group of pixel electrode sheet groups 131B is 1x1, and the size of the pixel electrode 131 in another group of pixel electrode sheet groups 131B is 0.95x0.95, and the size of the two groups of pixel electrode sheet groups 131B in the channel direction X and the layer thickness direction Z is different by 0.05 (5%), and the area difference is 1-0.95x0.95=9.75%, which is less than the preset difference value 10%. It can be understood that when the size of the pixel electrode in the layer thickness direction Z and the channel direction X is different, in order to ensure that the area difference is less than the preset difference value, the size difference in each direction needs to be small.

[0064] Generally speaking, the layer thickness direction Z has higher requirements on pixel sensitivity, so the size Z1 of the pixel electrode 131 of all pixel electrode sheet groups 131B in the layer thickness direction Z can be preferentially ensured to be consistent, and the size in the channel direction X is allowed to be designed differently. Of course, it is not excluded that in some cases, the size of the pixel electrode 131 of all pixel electrode sheet groups 131B in the channel direction X is kept consistent, and the size in the channel direction X is allowed to be designed differently, or the size in the layer thickness direction Z and the channel direction X is allowed to be designed differently. Through the size difference design, the welding quality of the conversion layer 130 and the pad 141 of the integrated circuit 140 can be improved, and the acquisition efficiency of the radiation detector 100 can be effectively improved.

[0065] In another embodiment, taking the size difference design of the pixel electrode in the channel direction X as an example, the plurality of pixel electrodes 131 are divided into MxN pixel electrode sheet groups 131B, M≥1, N>1. M corresponds to the layer thickness direction Z, and N corresponds to the channel direction X. From the N groups, n groups are selected, and the size of the pixel electrode 131 in each of the n groups in the channel direction X is different from the size of the pixel electrode 131 in each of the N-n groups in the channel direction X. In the case of N≥12, 4≤n≤12, when n=4, it can be represented that the sizes of 4 groups are designed differently, and the sizes of the remaining 8 groups are default sizes. If the sizes of the 4 groups that are designed differently are all different, there are a total of 5 different sizes. As shown in Figure 6 Taking M=4 and N=12 as an example, if X3 is the default size, then n=9 groups are selected for size adjustment (the adjusted sizes are X1, X2, X4, X5, X6, X7, wherein some groups in the n=9 groups have the same adjusted size, such as 3 groups have the same size X5), Figure 6 X1-X7 are shown as seven different sizes.

[0066] Exemplarily, for the conversion layer 130 containing 12 pixel electrode sheet groups 131B in the channel direction X, in order to effectively control the area of the pixel electrode, the size of at least 4 groups and above of the pixel electrode sheet groups 131B in the channel direction X needs to be adjusted coordinately.

[0067] Specifically, the size of each pixel electrode 131 in the channel direction X should be designed in multiple different specifications (X1~X7) Figure 3 The size difference between any two specifications is usually controlled within 10% in order to reduce the impact of pixel electrode difference on imaging quality. Through this multi-specification and small-difference size optimization strategy, the area difference of all pixel electrodes 131 can be ensured to be within the preset difference value of 10%.

[0068] Each pixel electrode sheet group 131B in the N-n group that is not selected, wherein the size of each pixel electrode 131 in the channel direction X and the layer thickness direction Z can be the same, for example, the size of each pixel electrode 131 can be 1×1 (unit size), which can actually be 0.25mm×0.25mm (250μm×250μm) or 0.5mm×0.5mm (500μm×500μm).

[0069] In another example, as Figure 6 shown, the conversion layer 130 has a first side 130A and a second side 130B arranged oppositely.

[0070] Among them, the plurality of pixel electrodes 131 are arranged on or close to the second side 130B, and the suppression scattering grid 110 is arranged close to the first side 130A, and the suppression scattering grid 110 includes a plurality of suppression scattering channels 111 arranged correspondingly to the plurality of pixel electrode sheet groups 131B, in the extension direction of the suppression scattering channel 111, any pixel electrode sheet group 131B projects on the second side 130B within the projection range of the suppression scattering channel 110 on the second side 130B.

[0071] In another embodiment, as ​ shown, the spacing between the two adjacent pixel electrode sheet groups 131B is a fifth spacing (ZC2, XC2), in the extension direction of the suppression scattering channel 111, the grid wall 112 of the suppression scattering channel 111 is aligned with the fifth spacing, and the wall thickness of the grid wall 112 is less than or equal to the fifth spacing, so that in the incident direction of the radiation, the projection of the grid wall 112 on the second side is within the projection range of the fifth spacing on the second side. In this way, the grid wall 112 will not block the pixel electrode 131, and the radiation in the suppression scattering channel 111 can be fully irradiated on the pixel electrode sheet group 131B around the grid wall 112 of the suppression scattering channel 111.

[0072] Embodiments of the present application also provide a medical device comprising a radiation detector 100.

[0073] In one embodiment, the medical device can be a computed tomography (CT) machine, an angiography machine, or a radiographic machine, among others.

[0074] It should be noted that the logical and / or steps represented in the flowcharts or otherwise described herein, for example, can be considered as a list of executable instructions for implementing logical functions and can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor- containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions, or a combination thereof. For purposes of this application, a "computer-readable medium" can be any apparatus that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. The computer-readable medium can be a product of the manufacturing and / or processing, and can be either an article of manufacture or a manufacture article. More specific examples (a non-exhaustive list) of the computer-readable medium include the following: an electronic connection having one or more wires (electronic devices), a portable computer diskette (magnetic devices), a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber (optical devices), and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium can even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, for example via the optical scanner of a device, or the like, then compiled, interpreted, or otherwise processed in a suitable manner, if necessary, and stored in a computer memory.

[0075] It should be understood that portions of the present application can be implemented in hardware, software, firmware, or combinations thereof. In the above-described embodiments, a number of steps or methods can be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any of the following technologies known in the art or combinations thereof can be used: discrete logic circuitry having logic gates for implementing logic functions on data signals, application specific integrated circuits having appropriate combinational logic gates, programmable gate arrays (PGA), field programmable gate arrays (FPGA), and the like.

[0076] In the description of the present application, references to terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples", and the like, are not necessarily to the same embodiment or example, and are intended to indicate that the described feature, structure, material, or characteristic being referred to can be included in a variety of one or more embodiments or examples. Furthermore, the described features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments or examples.

[0077] In the description of the present application, it needs to be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the purpose of facilitating the description of the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0078] In addition, the terms "first", "second", and the like used in the embodiments of the present application are only for the purpose of description, and cannot be understood as indicating or implying relative importance, or implicitly indicating the number of technical features referred to in the embodiments. Therefore, the features defined with "first", "second" and the like in the embodiments of the present application can be explicitly or implicitly indicated to include at least one of the features. In the description of the present application, the meaning of the word "plurality" is at least two or two or more, such as two, three, four, etc., unless otherwise specifically limited in the embodiments.

[0079] In the present application, unless otherwise specifically defined or limited in the embodiments, the terms "mounting", "connecting", "connecting" and "fixing" and the like appearing in the embodiments should be understood in a broad sense, for example, the connection can be a fixed connection, or a detachable connection, or integrated, which can be understood, or can be a mechanical connection, an electrical connection, etc. Of course, it can also be directly connected, or indirectly connected through an intermediate medium, or it can be the internal communication of two elements, or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific implementation situation.

[0080] In the present application, unless otherwise specifically defined or limited, the first feature "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

Claims

1. A radiation detector, characterized in that, include: An integrated circuit, wherein a plurality of pads are provided on one side of the integrated circuit, and the spacing between the plurality of pads is different; The conversion layer includes multiple pixel electrodes disposed on the side of the conversion layer near the multiple pads. The multiple pixel electrodes are correspondingly disposed to the multiple pads. The multiple pixel electrodes are divided into multiple pixel electrode groups. The pixel electrodes in at least two pixel electrode groups have different sizes. When each pixel electrode is connected to a corresponding pad, the distance between the edge of each pad and the edge of the corresponding pixel electrode is greater than a preset distance.

2. The radiation detector according to claim 1, characterized in that, The plurality of pixel electrodes are distributed along the layer thickness direction and the channel direction, the layer thickness direction and the channel direction are perpendicular to each other, the pixel electrodes between at least two pixel electrode groups have different dimensions in at least one of the layer thickness direction and the channel direction, and the area difference of the pixel electrodes between at least two pixel electrode groups is less than a preset difference value.

3. The radiation detector according to claim 2, characterized in that, The pixel electrodes between at least two pixel electrode groups have the same size in the layer thickness direction, the pixel electrodes between at least two pixel electrode groups have different sizes in the channel direction, and the size difference of the pixel electrodes between at least two pixel electrode groups in the channel direction determines the area difference.

4. The radiation detector according to claim 2, characterized in that, The pixel electrodes between at least two pixel electrode groups have different dimensions in the layer thickness direction, and the pixel electrodes between at least two pixel electrode groups have different dimensions in the channel direction. The size difference of the pixel electrodes between at least two pixel electrode groups in the layer thickness direction and the size difference in the channel direction together determine the area difference.

5. The radiation detector according to claim 3, characterized in that, The plurality of pixel electrodes are divided into M×N pixel electrode groups, where M corresponds to the layer thickness direction and N corresponds to the channel direction. n groups are selected from the N groups. The size of the pixel electrode in the channel direction of each of the n groups is different from the size of the pixel electrode in the channel direction of each of the Nn groups. When N≥12, 4≤n≤12.

6. The radiation detector according to claim 1, characterized in that, The preset spacing is 50μm.

7. The radiation detector according to claim 2, characterized in that, The plurality of pixel electrode groups have the same first spacing in the layer thickness direction, and the pixel electrodes in each pixel electrode group have the same second spacing in the layer thickness direction; the plurality of pixel electrode groups have the same third spacing in the channel direction, and the pixel electrodes in each pixel electrode group have the same fourth spacing in the channel direction.

8. The radiation detector according to claim 2, characterized in that, The second spacing of each pixel electrode in different pixel electrode groups is the same in the layer thickness direction, and the fourth spacing of each pixel electrode in different pixel electrode groups is the same in the channel direction.

9. The radiation detector according to claim 7, characterized in that, The first spacing is 3-6 times the second spacing, and the third spacing is 3-6 times the fourth spacing.

10. The radiation detector according to claim 1, characterized in that, The conversion layer has a first side and a second side disposed opposite to each other, and the plurality of pixel electrodes are disposed on the second side; the radiation detector further includes: A scattering suppression grid is provided close to the first side surface. The scattering suppression grid includes a plurality of scattering suppression channels corresponding to the plurality of pixel electrode groups. In the extending direction of the scattering suppression channels, the projection of any pixel electrode group on the second side surface is within the range of the projection of the scattering suppression channel on the second side surface.

11. The radiation detector according to claim 10, characterized in that, The spacing between two adjacent pixel electrode groups is the fifth spacing. In the extension direction of the suppression scattering channel, the grid wall of the suppression scattering channel is aligned with the fifth spacing, and the wall thickness of the grid wall is less than or equal to the fifth spacing.

12. The radiation detector according to claim 10, characterized in that, The radiation detector is a counting-type direct conversion radiation detector.

13. A medical device, characterized in that, Including claim 1 The radiation detector as described in any one of the 12.

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