Laser photovoltaic cell and manufacturing method thereof
By designing a vertically connected series structure for dual-band laser photovoltaic cells, the problem of insufficient applicability of GaAs-based laser cells under different environmental conditions was solved, and efficient photoelectric conversion and improved stability of 808nm and 1064nm laser cells were achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-17
- Publication Date
- 2026-04-14
AI Technical Summary
Existing GaAs-based laser cells lack applicability and stability under different environmental conditions, especially the significant difference in loss between 808nm and 1064nm laser cells during atmospheric transmission.
A dual-band laser photovoltaic cell is designed, comprising 808nm and 1064nm laser cells. The 808nm and 1064nm laser cells are respectively set on the upper and lower surfaces of the substrate through a longitudinally tandem epitaxial structure, and electrodes and grid lines are set on the surface of each cell to achieve independent connection of the two lasers.
This improves the applicability and stability of laser batteries under different environmental conditions, ensures efficient photoelectric conversion under 808nm and 1064nm lasers, and enhances the environmental adaptability and output characteristics of the batteries.
Smart Images
Figure CN121865726A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the technical field of photovoltaic cells, and more particularly to a laser photovoltaic cell and its manufacturing method. Background Technology
[0002] GaAs-based laser cells use laser light as the incident light source and are also known as photovoltaic power converters. Compared to broadband solar cells, GaAs-based laser cells exhibit higher photoelectric conversion efficiency under monochromatic light irradiation suitable for their bandgap. Furthermore, due to the tunable power of the laser, the cells can operate under high-power incident conditions, resulting in better output characteristics. For example, a single-junction GaAs-based laser cell can operate at an incident light wavelength of 808 nm and a power of 5 W / cm². 2 The photoelectric conversion efficiency can reach 53.23%. In addition, the laser battery has excellent electromagnetic interference resistance and insulation properties, which makes it widely used in spacecraft and other harsh environments.
[0003] Depending on the incident laser wavelength, laser cells are generally classified into 808nm and 1064nm types. 808nm laser cells belong to the near-infrared band and possess high energy transmission capabilities; however, their laser beam transmission efficiency in air is easily affected by atmospheric quality, exhibiting significant attenuation under poor atmospheric conditions. In contrast, 1064nm infrared laser cells experience less loss during atmospheric transmission and are more adaptable to different environments. Therefore, improving the applicability and stability of laser cells under various environmental conditions is of great significance. Summary of the Invention
[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a laser photovoltaic cell and its manufacturing method, which can be applied to the dual-band structure design of 808nm and 1064nm lasers to improve the applicability and stability of the laser cell under different environmental conditions.
[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows: In a first aspect, the present invention provides a laser photovoltaic cell, comprising a substrate, wherein an 808nm laser cell and a third electrode are disposed on the upper surface of the substrate, and a 1064nm laser cell and a fourth electrode are disposed on the lower surface of the substrate; a first electrode and a grid line are disposed on the surface of the 808nm laser cell; and a second electrode and a grid line are disposed on the surface of the 1064nm laser cell.
[0006] Preferably, the substrate is a GaAs substrate.
[0007] Preferably, the 808nm laser cell is provided with a first buffer layer, a first sub-cell, a second sub-cell, a third sub-cell, a fourth sub-cell, a fifth sub-cell, a sixth sub-cell, a first current spreading layer, and a first ohmic contact layer in sequence along the direction away from the substrate.
[0008] Preferably, the 1064nm laser cell is provided with a second buffer layer, a composition step change buffer layer, a seventh sub-cell, an eighth sub-cell, a ninth sub-cell, a tenth sub-cell, an eleventh sub-cell, a twelfth sub-cell, a second current extension layer, and a second ohmic contact layer in sequence along the direction away from the substrate.
[0009] Preferably, the base region and emitter region of each sub-cell in the 808nm laser cell are made of GaAs.
[0010] Preferably, the base region and emitter region of each sub-cell in the 1064nm laser cell are made of InGaAs.
[0011] Preferably, each sub-cell in the 808nm laser cell and the 1064nm laser cell independently includes a window layer, an emission region, a base region, and a back field layer, and the sub-cells are connected by tunnel junctions.
[0012] Preferably, both the third and fourth electrodes are ring-shaped, the 808nm laser cell is located on the central axis of the third electrode, and the 1064nm laser cell is located on the central axis of the fourth electrode.
[0013] Preferably, the distance between the 808nm laser cell and the third electrode is a, and the distance between the 1064nm laser cell and the fourth electrode is b, wherein a and b satisfy: a=b.
[0014] Preferably, a and b satisfy: 10μm≤a≤200μm, 10μm≤b≤200μm. For example, a can be 10μm, 20μm, 30μm, 40μm, 50μm, 80μm, 100μm, 120μm, 150μm, 180μm, 200μm or any two of these values; b can be 10μm, 20μm, 30μm, 40μm, 50μm, 80μm, 100μm, 120μm, 150μm, 180μm, 200μm or any two of these values.
[0015] Secondly, the present invention also provides a method for manufacturing a laser photovoltaic cell, comprising the following steps: (1) An 808nm laser cell and a third electrode are disposed on the upper surface of the substrate, and then a first electrode and a gate line are disposed on the surface of the 808nm laser cell; (2) A 1064nm laser cell and a fourth electrode are disposed on the lower surface of the substrate, and then a second electrode and a gate line are disposed on the surface of the 1064nm laser cell.
[0016] Preferably, the method for manufacturing the laser photovoltaic cell includes the following steps: (1) First, the first buffer layer, the first sub-cell, the second sub-cell, the third sub-cell, the fourth sub-cell, the fifth sub-cell, the sixth sub-cell, the first current spreading layer, and the first ohmic contact layer are grown in reverse order on the upper surface of the substrate. (2) Then, the second buffer layer, the composition step change buffer layer, the seventh subcell, the eighth subcell, the ninth subcell, the tenth subcell, the eleventh subcell, the twelfth subcell, the second current extension layer, and the second ohmic contact layer are sequentially grown on the lower surface of the substrate.
[0017] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention designs two types of laser cells in longitudinal series from the epitaxial structure. When the incident light is 808nm laser, the first and third electrodes are connected; when the incident light is 1064nm laser, the second and fourth electrodes are connected, thereby realizing photovoltaic power generation that can use both 808nm and 1064nm lasers. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the structure of the laser photovoltaic cell described in this invention.
[0019] Figure 2 This is a schematic diagram illustrating the epitaxial structure of a laser photovoltaic cell, as described in this invention. Detailed Implementation
[0020] To better illustrate the purpose, technical solution, and advantages of the present invention, the present invention will be further described below in conjunction with specific embodiments, but the scope of protection and implementation of the present invention are not limited thereto.
[0021] Unless otherwise specified, the materials and reagents used in the following examples are commercially available.
[0022] Example 1 This embodiment discloses a laser photovoltaic cell, such as Figure 1 As shown, the device includes a GaAs substrate, with an 808nm laser cell and a third electrode on the upper surface of the GaAs substrate, and a 1064nm laser cell and a fourth electrode on the lower surface of the GaAs substrate; the 808nm laser cell has a first electrode and a gate line on its surface; and the 1064nm laser cell has a second electrode and a gate line on its surface.
[0023] like Figure 1As shown, both the third and fourth electrodes are ring-shaped, the 808nm laser cell is located on the central axis of the third electrode, and the 1064nm laser cell is located on the central axis of the fourth electrode.
[0024] like Figure 1 As shown, the distance between the 808nm laser cell and the third electrode is a, and the distance between the 1064nm laser cell and the fourth electrode is b. The distances a and b satisfy: a = 10μm, b = 10μm.
[0025] like Figure 2 As shown, the 808nm laser cell sequentially comprises a first buffer layer, a first sub-cell, a second sub-cell, a third sub-cell, a fourth sub-cell, a fifth sub-cell, a sixth sub-cell, a first current spreading layer, and a first ohmic contact layer along the direction away from the substrate. The first, second, third, fourth, fifth, and sixth sub-cells are connected via AlGaAs tunnel junctions. The 1064nm laser cell sequentially comprises a second buffer layer, a composition step change buffer layer, a seventh, eighth, ninth, tenth, eleventh, and twelfth sub-cells, a second current spreading layer, and a second ohmic contact layer along the direction away from the substrate. The seventh, eighth, ninth, tenth, eleventh, and twelfth sub-cells are connected via AlGaInAs tunnel junctions.
[0026] This embodiment also discloses a method for manufacturing a laser photovoltaic cell, including the following steps: (1) A first buffer layer is grown inverted on the upper surface of a GaAs substrate. The first buffer layer is a 500 nm thick GaAs substrate with a doping concentration of 3 × 10⁻⁶. 18 cm -3 ; (2) The first sub-cell is grown inverted on the first buffer layer along the direction away from the substrate. The first sub-cell consists of a 100nm thick AlGaAs back field layer, a 2200nm thick GaAs base region, a 100nm thick GaAs emitter region, and a 30nm thick AlInP window layer. The first tunnel junction is grown inverted on the first sub-cell. The first tunnel junction contains AlGaAs. (3) A second sub-cell is grown inverted on the first tunnel junction along the direction away from the substrate. The second sub-cell consists of a 100 nm thick AlGaAs back field layer, a 400 nm thick GaAs base region, a 100 nm thick GaAs emitter region, and a 30 nm thick AlInP window layer. A second tunnel junction is grown inverted on the second sub-cell. The second tunnel junction contains AlGaAs. (4) A third sub-cell is grown inverted on the second tunnel junction along the direction away from the substrate. The third sub-cell consists of a 100 nm thick AlGaAs back field layer, a 200 nm thick GaAs base region, a 100 nm thick GaAs emitter region, and a 30 nm thick AlInP window layer. A third tunnel junction is grown inverted on the third sub-cell. The third tunnel junction contains AlGaAs. (5) A fourth sub-cell is grown inverted on the third tunnel junction along the direction away from the substrate. The fourth sub-cell consists of a 100 nm thick AlGaAs back field layer, a 100 nm thick GaAs base region, a 100 nm thick GaAs emitter region, and a 30 nm thick AlInP window layer. A fourth tunnel junction is grown inverted on the fourth sub-cell. The fourth tunnel junction contains AlGaAs. (6) A fifth sub-cell is grown inverted on the fourth tunnel junction along the direction away from the substrate. The fifth sub-cell consists of a 100 nm thick AlGaAs back field layer, a 60 nm thick GaAs base region, a 100 nm thick GaAs emitter region, and a 30 nm thick AlInP window layer. A fifth tunnel junction is grown inverted on the fifth sub-cell. The fifth tunnel junction contains AlGaAs. (7) The sixth sub-cell is grown inverted on the fifth tunnel junction along the direction away from the substrate. The sixth sub-cell consists of a 100nm thick AlGaAs back field layer, a 40nm thick GaAs base region, a 100nm thick GaAs emitter region, and a 30nm thick AlInP window layer. (8) An inverted first current extension layer is grown on the sixth sub-cell. The first current extension layer is 800 nm GaInP with a doping concentration of 5 × 10⁻⁶. 18 cm -3 ; (9) An inverted first ohmic contact layer is grown on the first electrically extended layer. The first ohmic contact layer is a 500 nm thick GaAs with a doping concentration of 5 × 10⁻⁶. 18 cm -3 ; (10) A first electrode, a third electrode, and a gate line are disposed on the first ohmic contact layer. The first electrode, the third electrode, and the gate line are all Au with a thickness of 4000 nm, and the distance between the third electrode and the 808 nm laser cell is 10 micrometers. (11) A second buffer layer is grown on the lower surface of the GaAs substrate in the forward direction. The second buffer layer is an InGaAs with a thickness of 500 nm and a doping concentration of 3 × 10⁻⁶. 18 cm -3 ; (12) A compositional gradient buffer layer is forward grown on the second buffer layer, wherein the compositional gradient buffer layer is a 2000 nm thick AlInGaAs with a doping concentration of 3 × 10⁻⁶. 18cm -3 ; (13) A seventh sub-cell is grown in the forward direction on the composition-level change buffer layer. Along the direction away from the substrate, the seventh sub-cell consists of a 100 nm thick AlGaInAs back field layer, a 2200 nm thick InGaAs base region, a 100 nm thick InGaAs emitter region, and a 30 nm thick AlInP window layer; a sixth tunnel junction is grown in the reverse direction on the seventh sub-cell. The sixth tunnel junction contains AlGaInAs. (14) An eighth sub-cell is grown in the forward direction on the sixth tunnel junction along the direction away from the substrate. The eighth sub-cell consists of a 100 nm thick AlGaInAs back field layer, a 400 nm thick InGaAs base region, a 100 nm thick InGaAs emitter region, and a 30 nm thick AlInP window layer. A seventh tunnel junction is grown in the reverse direction on the eighth sub-cell. The seventh tunnel junction contains AlGaInAs. (15) A ninth sub-cell is grown in the forward direction on the seventh tunnel junction along the direction away from the substrate. The ninth sub-cell consists of a 100 nm thick AlGaInAs back field layer, a 200 nm thick InGaAs base region, a 100 nm thick InGaAs emitter region, and a 30 nm thick AlInP window layer. An eighth tunnel junction is grown in the reverse direction on the ninth sub-cell. The eighth tunnel junction contains AlGaInAs. (16) A tenth subcell is grown in the forward direction on the eighth tunnel junction along the direction away from the substrate. The tenth subcell consists of a 100nm thick AlGaInAs back field layer, a 100nm thick InGaAs base region, a 100nm thick InGaAs emitter region, and a 30nm thick AlInP window layer. A ninth tunnel junction is grown in the reverse direction on the tenth subcell. The ninth tunnel junction contains AlGaInAs. (17) An eleven sub-cell is grown in the forward direction on the ninth tunnel junction along the direction away from the substrate. The eleven sub-cell consists of a 100 nm thick AlGaInAs back field layer, a 60 nm thick InGaAs base region, a 100 nm thick InGaAs emitter region, and a 30 nm thick AlInP window layer. A tenth tunnel junction is grown in the reverse direction on the eleventh sub-cell. The tenth tunnel junction contains AlGaInAs. (18) A twelfth subcell is grown in the forward direction on the tenth tunnel junction along the direction away from the substrate. The twelfth subcell consists of a 100nm thick AlGaInAs back field layer, a 40nm thick InGaAs base region, a 100nm thick InGaAs emitter region, and a 30nm thick AlInP window layer. (19) A second current spreading layer is forward grown on the twelfth sub-cell. The second current spreading layer is 800 nm GaInP with a doping concentration of 5 × 10⁻⁶. 18 cm -3 ; (20) A second ohmic contact layer is forward grown on the second current extension layer. The second ohmic contact layer is a 500 nm thick InGaAs with a doping concentration of 5 × 10⁻⁶. 18 cm -3 ; (21) A second electrode, a fourth electrode, and a gate line are disposed on the second ohmic contact layer. The second electrode, the fourth electrode, and the gate line are all Au with a thickness of 4000 nm. The distance between the fourth electrode and the 1064 nm laser cell is 10 micrometers. (22) Finally, antireflection films with a thickness of 120 nm were set on the surfaces of the 808 nm laser cell and the 1064 nm laser cell, respectively.
[0027] This invention designs two types of laser cells in longitudinal series from the epitaxial structure. When the incident light is 808nm laser, the first and third electrodes are connected; when the incident light is 1064nm laser, the second and fourth electrodes are connected, thereby realizing photovoltaic power generation that can use both 808nm and 1064nm lasers.
[0028] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the essence and scope of the technical solutions of the present invention.
Claims
1. A laser photovoltaic cell, characterized in that, The device includes a substrate, on the upper surface of which an 808nm laser cell and a third electrode are disposed, and on the lower surface of which a 1064nm laser cell and a fourth electrode are disposed; the surface of the 808nm laser cell is provided with a first electrode and a gate line; and the surface of the 1064nm laser cell is provided with a second electrode and a gate line.
2. The laser photovoltaic cell as described in claim 1, characterized in that, The 808nm laser cell is sequentially provided with a first buffer layer, a first sub-cell, a second sub-cell, a third sub-cell, a fourth sub-cell, a fifth sub-cell, a sixth sub-cell, a first current spreading layer, and a first ohmic contact layer along the direction away from the substrate. The 1064nm laser cell is sequentially configured with a second buffer layer, a composition step change buffer layer, a seventh sub-cell, an eighth sub-cell, a ninth sub-cell, a tenth sub-cell, an eleventh sub-cell, a twelfth sub-cell, a second current extension layer, and a second ohmic contact layer along the direction away from the substrate.
3. The laser photovoltaic cell as described in claim 1, characterized in that, The base region and emitter region of each sub-cell in the 808nm laser cell are made of GaAs.
4. The laser photovoltaic cell as described in claim 1, characterized in that, The base region and emitter region of each sub-cell in the 1064nm laser cell are made of InGaAs.
5. The laser photovoltaic cell as described in claim 1, characterized in that, Each sub-cell in the 808nm laser cell and the 1064nm laser cell independently includes a window layer, an emission region, a base region, and a back field layer, and the sub-cells are connected by tunnel junctions.
6. The laser photovoltaic cell as described in claim 1, characterized in that, Both the third and fourth electrodes are ring-shaped. The 808nm laser cell is located on the central axis of the third electrode, and the 1064nm laser cell is located on the central axis of the fourth electrode.
7. The laser photovoltaic cell as described in claim 6, characterized in that, The distance between the 808nm laser cell and the third electrode is a, and the distance between the 1064nm laser cell and the fourth electrode is b. The distances a and b satisfy: a = b.
8. The laser photovoltaic cell as described in claim 7, characterized in that, The conditions a and b satisfy: 10μm≤a≤200μm, 10μm≤b≤200μm.
9. A method for manufacturing a laser photovoltaic cell as described in any one of claims 1-8, characterized in that, Includes the following steps: (1) An 808nm laser cell and a third electrode are disposed on the upper surface of the substrate, and then a first electrode and a gate line are disposed on the surface of the 808nm laser cell; (2) A 1064nm laser cell and a fourth electrode are disposed on the lower surface of the substrate, and then a second electrode and a gate line are disposed on the surface of the 1064nm laser cell.