High-voltage light-emitting diode and light-emitting device

Abstract

The invention provides a high-voltage light-emitting diode and a light-emitting device, and the arrangement of an insulating layer is changed, so that a bridging electrode is provided with end parts and an arc-shaped connecting part between the end parts when being observed from the direction perpendicular to the plane where a substrate is located; the arc-shaped connecting part protrudes towards one side of the high-voltage light-emitting diode closest to the arc-shaped connecting part; in the area corresponding to the isolation groove between the light-emitting units, the edge of the arc-shaped connecting part and one side of the high-voltage light-emitting diode have a minimum distance D0, the edge of the arc-shaped connecting part and the opposite side of the one side have a maximum distance D1, and D1: D0 > 2: 1. Therefore, the bridging electrode avoids the middle area of the light-emitting unit, when the ejector pin acts on the upper portion of the high-voltage light-emitting diode, acting force can be prevented from acting on the bridging electrode, and the risk that the bridging electrode is broken or broken by the ejector pin is avoided.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a high-voltage light-emitting diode and a light-emitting device. Background Technology

[0002] A light-emitting diode (LED) is a semiconductor device whose basic structure includes a PN junction between a P-type semiconductor and an N-type semiconductor. When a forward voltage is applied to the LED, electrons and holes recombine at the junction of the PN junction and release energy. This energy is emitted in the form of photons to form light radiation.

[0003] Currently, high-voltage LED chips generally adopt a series structure design, with common series combinations including 2-string, 3-string, and 6-string configurations. This design constructs an LED chip capable of withstanding high voltage by connecting multiple cells in series, with channels providing effective electrical isolation between the cells. The cells are interconnected via bridging electrodes. As the application fields of high-voltage LED chips continue to expand, their size is gradually decreasing, making the formation space for bridging electrodes more limited. Taking Mini RGB high-voltage flip-chip as an example, due to its small size and high integration, the bridging electrodes are typically formed near the center of the cell to ensure a high connection yield.

[0004] Current flip-chip LEDs require an Ag or DBR (Dielectric Backing Matrix) reflector to be formed on the epitaxial layer as a reflective layer. The DBR reflective layer serves as an insulating protective layer, with the first and second pads directly formed on its surface. During chip transfer, a push pin is used to apply pressure to the insulating protective layer between the first and second pads. Due to the location of the bridging electrode and the brittleness of the insulating protective layer, the pressure applied during push pin application can potentially cause the bridging electrode to break or fracture, affecting its reliability. Furthermore, it may also lead to cracking of the insulating protective layer, significantly reducing its insulating protection effect. All of these factors negatively impact the overall reliability of the LED.

[0005] Therefore, ensuring the reliability of series connection between cells and the insulation reliability of the LED has become a key issue that urgently needs to be addressed in the current development of high-voltage LED chip technology. Summary of the Invention

[0006] In view of the defects and shortcomings of the existing high-voltage light-emitting diodes described above, the purpose of this application is to provide a high-voltage light-emitting diode and a light-emitting device to effectively solve the problems of series reliability of the light-emitting units and the overall insulation reliability of the light-emitting diode.

[0007] According to one aspect of this application, a high-voltage light-emitting diode is provided, comprising:

[0008] Substrate;

[0009] N light-emitting units are arranged on the substrate at intervals, with adjacent light-emitting units separated by isolation grooves, where N≥2;

[0010] The bridging electrode, viewed from a plane perpendicular to the surface of the substrate, has an end and an arc-shaped connection between the ends, the end being electrically connected to an adjacent light-emitting unit; the arc-shaped connection protrudes toward the side of the nearest high-voltage light-emitting diode;

[0011] In the region corresponding to the isolation groove, the edge of the arc-shaped connecting part has a minimum distance D0 from one side of the high-voltage light-emitting diode and a maximum distance D1 from the opposite side of the one side, wherein D1:D0>2:1.

[0012] According to one aspect of this application, a light-emitting device is also provided, the light-emitting device comprising:

[0013] Packaging substrate;

[0014] At least one high-voltage light-emitting diode is disposed on the surface of the packaging substrate, and the packaging substrate and the electrode structure of the high-voltage light-emitting diode are electrically connected; the high-voltage light-emitting diode is the high-voltage light-emitting diode provided by the above technical solution.

[0015] Compared with the prior art, the high-voltage light-emitting diode and light-emitting device provided in this application have at least the following beneficial effects:

[0016] This application's technical solution, by modifying the insulating layer, ensures that the edge of the arc-shaped connection portion of the bridging electrode has a minimum distance D1 from one side of the high-voltage LED and a maximum distance D0 from the opposite side, where D1:D0 > 2:1. This allows the arc-shaped connection portion of the bridging electrode, particularly corresponding to the isolation trench region, to avoid the central area of ​​the light-emitting unit. When the ejector pin acts on the high-voltage LED, the force is prevented from acting on the bridging electrode, avoiding the risk of the bridging electrode being broken or damaged by the ejector pin. Simultaneously, the insulating layer, together with the DBR reflective layer, provides insulation protection, and the thickness of the insulating material layer can be increased accordingly, preventing the material layer from being broken by the ejector pin and improving its insulation protection effect. All of the above improves the reliability of the LED. Attached Figure Description

[0017] Figure 1 The diagram shown is a top view of a high-voltage light-emitting diode chip in the prior art.

[0018] Figure 2 The diagram shown is a top view of the high-voltage light-emitting diode provided in Embodiment 1 of this application.

[0019] Figure 3 Displayed as along Figure 2 A schematic diagram of the cross-sectional structure of line AA in the middle.

[0020] Figure 4 The diagram shown is a top view of a high-voltage light-emitting diode, which is an optional example of Embodiment 1.

[0021] Figure 5 The diagram shown is a top view of the high-voltage light-emitting diode provided in Embodiment 2 of this application.

[0022] Figure 6 Displayed as along Figure 5 A schematic diagram of the cross-sectional structure of line AA in the middle.

[0023] Figure 7 The diagram shown is a top view of the high-voltage light-emitting diode provided in Embodiment 3 of this application.

[0024] Figure 8 Displayed as along Figure 7 A schematic diagram of the cross-sectional structure of line AA in the middle.

[0025] Figure 9 and Figure 10 The diagram shown is a top view of a high-voltage light-emitting diode provided in another embodiment of this application.

[0026] Figure 11 The diagram shown is a schematic diagram of the light-emitting device provided in Embodiment 4 of this application.

[0027] List of reference numerals in the attached diagram:

[0028] 01. First unit cell; 02. Second unit cell; 03. Connecting electrode; 04. Insulating protective layer; 05. Trench; 011. N-type layer; 012. P-type layer.

[0029] 101. First light-emitting unit; 102. Second light-emitting unit; 102'. Third light-emitting unit; 101'. Fourth light-emitting unit; 103. Bridging electrode; 1031. End; 1032. Arc-shaped connection; 104. Insulating layer; 1041. Third through hole; 1042. Fourth through hole; 105. Isolation groove; 106. Reflective layer; 1061. First through hole; 1062. Second through hole; 107. One side; 108. Second Edge; 110, Semiconductor stack; 1101, First mesa; 1102, Second mesa; 111, First semiconductor layer; 112, Active layer; 113, Second semiconductor layer; 114, Transparent conductive layer; 115, Current blocking layer; 116, First electrode; 1161, First contact electrode; 1162, First pad; 117, Second electrode; 1171, Second contact electrode; 1172, Second pad; 120, Substrate.

[0030] 200, Light-emitting device; 201, Packaging substrate; 202, High-voltage light-emitting diode; 203, Circuit layer. Detailed Implementation

[0031] In existing high-voltage light-emitting diodes, such as Figure 1 As shown, a high-voltage light-emitting diode (LED) comprises two connected cells, a first cell 01 and a second cell 02. The first cell 01 and the second cell 02 are isolated from each other by a trench 05 and connected in series via a connecting electrode 03. The connecting electrode 03 spans the trench 05, with one end electrically connected to the P-type layer of the first cell 01 and the other end electrically connected to the N-type layer of the second cell 02. An insulating protective layer 04 is formed below the connecting electrode 03 to prevent short circuits between the first cell 01 and the second cell 02. Figure 1 As shown, in the prior art, considering the integrity and ease of formation of the connecting electrode 03, the connecting electrode 03 is usually placed in the area near the middle of the high voltage light-emitting diode. This results in a limited distance between the connecting electrode 03 and the edge of the high voltage light-emitting diode in the width direction. Consequently, when the pin applies force to the light-emitting diode during subsequent transfer, it is highly likely to act on the top of the connecting electrode 03, thus increasing the risk of the connecting electrode being squeezed and cracked or broken, thereby affecting the reliability of the light-emitting diode.

[0032] To address the aforementioned deficiencies of high-voltage light-emitting diodes in the prior art, this application provides a high-voltage light-emitting diode and a light-emitting device to solve the reliability problem of high-voltage light-emitting diodes.

[0033] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.

[0034] It should be noted that the illustrations provided in the embodiments of this application are only schematic representations of the basic concept of this application. Although the illustrations only show components related to this application and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component can be arbitrarily changed in actual implementation, and the component layout may also be more complex. The structures, proportions, sizes, etc., shown in the accompanying drawings are only used to complement the content disclosed in the specification for those skilled in the art to understand and read, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modification to the structure, change in the proportional relationship, or adjustment of the size should still fall within the scope of the technical content disclosed in this application, provided that it does not affect the effects and purposes that this application can produce. One embodiment of this application provides a high-voltage light-emitting diode, which includes:

[0035] Substrate;

[0036] N light-emitting units are arranged on the substrate at intervals, with adjacent light-emitting units separated by isolation grooves, where N≥2;

[0037] The bridging electrode, viewed from a plane perpendicular to the surface of the substrate, has an end and an arc-shaped connection between the ends, the end being electrically connected to an adjacent light-emitting unit; the arc-shaped connection protrudes toward the side of the nearest high-voltage light-emitting diode;

[0038] In the region corresponding to the isolation groove, the edge of the arc-shaped connecting part has a minimum distance D0 from one side of the high-voltage light-emitting diode and a maximum distance D1 from the opposite side of the one side, where D1:D0>2:1.

[0039] By configuring the aforementioned insulating layer, the bridging electrode can be positioned closer to one side of the LED, ensuring that the ratio of the minimum distance between the edge of the arc-shaped connection of the bridging electrode and one side of the LED to the maximum distance between the edge of the arc-shaped connection and the opposite side of the LED is greater than 2:1. This allows the bridging electrode to avoid the central region of the light-emitting unit. When the ejector pin acts on the high-voltage LED, the force is prevented from acting on the bridging electrode, avoiding the risk of the bridging electrode being broken or damaged by the ejector pin. This ensures the reliability and stability of the electrical connection of the bridging electrode and improves the reliability of the LED.

[0040] In an optional embodiment, the high-voltage light-emitting diode is characterized by further comprising an insulating layer located below the bridging electrode; projected onto the plane containing the surface of the substrate, the projection area of ​​the insulating layer has a projection area that is connected to the arc-shaped connection portion.

[0041] In an optional embodiment, the high-voltage light-emitting diode is characterized by further comprising an insulating layer located below the bridging electrode; projected onto the plane containing the surface of the substrate, at least the projection area of ​​the arcuate connection portion of the bridging electrode is located within the projection area of ​​the insulating layer.

[0042] In an optional embodiment, when viewed from a plane perpendicular to the surface of the substrate, the insulating layer covers the edge of the high-voltage light-emitting diode along a direction perpendicular to one side of the high-voltage light-emitting diode. The insulating layer provided above ensures that an insulating layer exists beneath the arc-shaped connection portion. Furthermore, the insulating layer covering the edge of the light-emitting unit along a direction perpendicular to one side of the light-emitting diode not only increases the insulation effect of the light-emitting unit but also buffers the effect of the ejector pin to some extent, preventing damage to the light-emitting unit from the ejector pin.

[0043] In an optional implementation, D0 ≥ 40 μm; 50 μm ≤ D0 + D1 ≤ 100 μm.

[0044] In this application, the light-emitting unit is a small-sized chip, and more specifically, a Mini chip. The inclusion of an insulating layer and bridging electrodes in the small-sized chip improves the reliability of the Mini chip. The specific definition of the aforementioned vertical distance D1 ensures sufficient space between the edge of the bridging electrode and the edge of the light-emitting unit for the pin to function, and also ensures that the pin does not act on the bridging electrode, preventing the bridging electrode from cracking or breaking.

[0045] In an alternative embodiment, the projection profile of the end of the bridging electrode is located outside the projection profile of the insulating layer in a direction parallel to one side of the high-voltage light-emitting diode, projected onto the plane containing the surface of the substrate.

[0046] In an alternative embodiment, the minimum distance between the projected profile of the end of the bridging electrode and the projected profile of the insulating layer in a direction parallel to one side of the high-voltage light-emitting diode is D2, where 3 μm ≤ D2 ≤ 8 μm.

[0047] The distance between the end of the bridging electrode and the edge of the insulating layer is set to ensure sufficient contact area between the bridging electrode and the light-emitting unit, thus guaranteeing the reliability of the electrical connection between the bridging electrode and the light-emitting unit.

[0048] In an optional embodiment, the insulating layer extends below the bridging electrode to cover the surface and sidewalls of the high-voltage light-emitting diode, forming a through hole above the light-emitting unit so that the end of the bridging electrode is electrically connected to the light-emitting unit.

[0049] The insulating layer is not only formed in the area corresponding to the bridging electrode, but also extends to cover the entire exposed surface and sidewalls of the light-emitting unit, thereby further increasing the insulation protection of the light-emitting unit, further improving the insulation performance of the light-emitting unit, and further increasing the buffer against the force of the ejector pin, preventing the light-emitting unit from being damaged by the ejector pin, and improving its reliability.

[0050] In an alternative embodiment, the projection of the end of the bridging electrode is located within the projection profile of the via in the insulating layer on the surface of the substrate.

[0051] In an alternative embodiment, the projection is made on the surface of the substrate, and the projection profile of the via in the insulating layer is located within the projection profile of the end of the bridging electrode.

[0052] In an optional embodiment, the projection is made on the surface of the substrate, and the vertical distance between the projected profile of the through hole in the insulating layer and the projected profile of the end of the bridging electrode is D3, where 3 μm ≤ D3 ≤ 8 μm.

[0053] The positional relationship between the bridging electrode and the through-hole in the insulating layer, as well as the limitation of the distance between the end of the bridging electrode and the edge of the through-hole in the insulating layer, allow the bridging electrode to achieve electrical connection with the light-emitting unit in different ways, while satisfying different settings of the insulating layer.

[0054] In an optional embodiment, the light-emitting unit includes:

[0055] A semiconductor stack is formed on the substrate, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially; the semiconductor stack has a first mesa and a second mesa, the first mesa exposing a portion of the first semiconductor layer, and the second mesa being the semiconductor stack immediately adjacent to the first mesa;

[0056] A transparent conductive layer is formed above the second mesa of each of the light-emitting units and below the insulating layer;

[0057] A first electrode is formed above the first mesa of the Nth light-emitting unit to form an electrical connection with the first semiconductor layer;

[0058] The second electrode is formed above the second mesa of the first light-emitting unit and is electrically connected to the second semiconductor layer through the transparent conductive layer.

[0059] A transparent conductive layer is provided in the light-emitting unit, and the positional relationship between the insulating layer and the transparent conductive layer is adjusted so that the light-emitting unit can have good current expansion and good insulation performance.

[0060] In an optional embodiment, the light-emitting unit includes:

[0061] A semiconductor stack is formed on the substrate, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially; the semiconductor stack has a first mesa and a second mesa, the first mesa exposing a portion of the first semiconductor layer, and the second mesa being the semiconductor stack immediately adjacent to the first mesa;

[0062] A current blocking layer is located above the second mesa of the first light-emitting unit;

[0063] A transparent conductive layer is located above the second mesa of each of the light-emitting units. In the first light-emitting unit, it is located above the current blocking layer. In the other light-emitting units besides the first light-emitting unit, the transparent conductive layer is located between the bridging electrode and the insulating layer, and the sidewall of the transparent conductive layer surrounding the insulating layer is formed above the second semiconductor layer at the second mesa.

[0064] The first electrode is located above the first mesa of the Nth light-emitting unit to form an electrical connection with the first semiconductor layer;

[0065] The second electrode is located above the second mesa of the first light-emitting unit and is electrically connected to the second semiconductor layer through the transparent conductive layer. In an optional embodiment, the projection outline of the insulating layer onto the second mesa of the remaining light-emitting units (excluding the first light-emitting unit) is located between the projection outline of the transparent conductive layer and the projection outline of the end of the bridging electrode on the surface of the substrate.

[0066] A transparent conductive layer is set in the light-emitting unit, and a current blocking layer is set below the transparent conductive layer in the area where no insulating layer is set. At the same time, the positional relationship between the insulating layer and the transparent conductive layer is adjusted so that the light-emitting unit can have good current spreadability and good insulation performance.

[0067] Another embodiment of this application provides a light-emitting device, the light-emitting device comprising:

[0068] Packaging substrate;

[0069] At least one high-voltage light-emitting diode is disposed on the surface of the packaging substrate, and the packaging substrate and the electrode structure of the high-voltage light-emitting diode are electrically connected; the high-voltage light-emitting diode is the high-voltage light-emitting diode provided in this application.

[0070] The light-emitting device includes the high-voltage light-emitting diode provided in this application, and therefore has good reliability.

[0071] Example 1

[0072] This embodiment provides a high-voltage light-emitting diode (LED), comprising N light-emitting units arranged in a predetermined direction and connected in series, where N is a natural number greater than or equal to 2. The high-voltage LED can be as follows: Figure 2 The diagram shows two light-emitting units connected in series: a first light-emitting unit 101 and a second light-emitting unit 102; it can also be as follows: Figure 9 The diagram shows three light-emitting units connected in series in a 1×3 configuration: a first light-emitting unit 101, a second light-emitting unit 102, and a third light-emitting unit 102'; or... Figure 10 The diagram shows four light-emitting units arranged in a 2×2 configuration and connected in series: first light-emitting unit 101, second light-emitting unit 102, third light-emitting unit 102', and fourth light-emitting unit 101'. High-voltage light-emitting diodes may also contain other numbers of light-emitting units, which will not be listed here.

[0073] In this embodiment, Figure 2 The following explanation uses a high-voltage light-emitting diode (LED) including a first light-emitting unit 101 and a second light-emitting unit 102 as an example. Figure 2 As shown, the high-voltage light-emitting diode includes a substrate 120 and two light-emitting units located above the substrate 120: a first light-emitting unit 101 and a second light-emitting unit 102, with adjacent light-emitting units spaced apart by an isolation trench 105. Similarly, as... Figure 2 and Figure 3 As shown, adjacent first light-emitting units 101 and second light-emitting units 102 are connected in series via a bridging electrode 103. The bridging electrode 103 extends across the aforementioned isolation groove 105 to connect the first light-emitting unit 101 and the second light-emitting unit 102 in series. Specifically, as... Figure 2 As shown in the top view of the high-voltage light-emitting diode, that is, viewed from a direction perpendicular to the plane containing the surface of the substrate 120, the bridging electrode 103 includes two ends 1031 and an arc-shaped connecting portion 1032 connecting the two ends 1031. The ends 1031 are respectively located above the first light-emitting unit 101 and the second light-emitting unit 102 to connect the first light-emitting unit 101 and the second light-emitting unit 102 in series. Figure 2 As shown, the side closest to the mid-distance arc-shaped connection portion 1032 of the high-voltage light-emitting diode is defined as the first side 107, and the opposite side of the first side 107 is defined as the second side 108. The arc-shaped connection portion 1032 protrudes toward the first side 107, such that the arc-shaped connection portion 1032 of the bridging electrode 103 is close to the first side 107 of the high-voltage light-emitting diode and relatively far away from the second side 108 opposite to the first side 107.

[0074] See also Figure 2 Hezhi Figure 3 In the high-voltage light-emitting diode provided in this embodiment, other material layers that contribute to the device function may also be included between the substrate 120 and the semiconductor stack 110, such as a buffer layer. This embodiment is not limited to this. The substrate 120 may be an insulating substrate, a semiconductor substrate, or a metal substrate, etc. The substrate of the high-voltage light-emitting diode provided in this embodiment is a sapphire substrate.

[0075] In an optional embodiment, a semiconductor stack 110 is formed on a substrate 120, including a first semiconductor layer 111, an active layer 112, and a second semiconductor layer 113 stacked sequentially. An isolation trench 105 is formed in the semiconductor stack 110. For example, by etching the semiconductor stack 110 until the substrate 120 is exposed, the semiconductor stack 110 is divided into independent portions, each of which can form an independent light-emitting unit. Figure 3 As shown, in each light-emitting unit, the semiconductor stack 110 has a first mesa 1101 and a second mesa 1102. The first mesa 1101 is formed by removing part of the semiconductor stack 110 until a part of the first semiconductor layer 111 is exposed. The second mesa 1102 is the semiconductor stack 110 around the first mesa 1101 that has not been removed, and its surface is the upper surface of the second semiconductor layer 113. In the high-voltage light-emitting diode, adjacent light-emitting units are arranged with the first mesa 1101 and the second mesa 1102 adjacent to each other. In two adjacent light-emitting units, the bridging electrode 103 extends from the first mesa 1101 of the first light-emitting unit 101 and extends through the sidewall and bottom surface of the isolation trench 105 to the top of the second mesa 1102 of the second light-emitting unit 102, so as to electrically connect the first semiconductor layer 111 of the first light-emitting unit 101 and the second semiconductor layer 113 of the second light-emitting unit 102.

[0076] For example, the first semiconductor layer 111 is an N-type semiconductor layer, and the second semiconductor layer 113 is a P-type semiconductor layer. The N-type first semiconductor layer 111 provides electrons to the active layer 112 by doping with N-type impurities, and the P-type second semiconductor layer 113 provides holes to the active layer 112 by doping with P-type impurities. The semiconductor stack 110 can be a III-V compound semiconductor material layer. For example, the first semiconductor layer 111 and the second semiconductor layer 113 can be aluminum indium phosphide (AlInP) or aluminum gallium indium phosphide (AlGaInP) based material layers, or a group III nitride material layer. The active layer 112 can be a gallium arsenide (GaAs) series, aluminum gallium indium nitride (AlGaInN) series, aluminum indium phosphide (AlInP) or aluminum indium gallium phosphide (AlGaInP) series, or gallium nitride (GaN) series semiconductor material. This embodiment is not limited to these. N-type impurities can be Si, Ge, Sn, Se, and Te, etc., while P-type impurities can be Mg, Zn, Ca, Sr, Ba, etc. Furthermore, N-type impurities can be Si, and P-type impurities can be Mg.

[0077] Similarly, refer to Figure 2 and Figure 3 The high-voltage light-emitting diode in this embodiment also includes an insulating layer 104, which is located below the bridging electrode 103 to prevent short circuits between the first light-emitting unit 101 and the second light-emitting unit 102. Projected onto the plane containing the surface of the substrate 120, optionally, the projection area of ​​the insulating layer 104 overlaps with the projection area of ​​the arc-shaped connection portion 1032; optionally, at least the projection area of ​​the arc-shaped connection portion 1032 of the bridging electrode 103 is located within the projection area of ​​the insulating layer 104. With the above configuration, an insulating layer 104 is always present below the arc-shaped connection portion 1032, thereby ensuring the insulation effect of the light-emitting unit.

[0078] Specifically, such as Figure 2 and Figure 3 As shown, the insulating layer 104 is located below the bridging electrode 103, and below the bridging electrode 103 along a direction perpendicular to the first side 107 of the high-voltage light-emitting diode (i.e., Figure 2 Extending in the vertical direction (in the middle) to the edge of the high-voltage light-emitting diode, thereby ensuring the reliability of the electrical connection between the first light-emitting unit 101 and the second light-emitting unit 102 through the bridging electrode 103. In the direction parallel to the first side 107 of the high-voltage light-emitting diode (i.e., in the vertical direction), it extends to the edge of the high-voltage light-emitting diode, thereby ensuring the reliability of the electrical connection between the first light-emitting Figure 2In the left-right direction, in the region of the first mesa 1101 of the first light-emitting unit 101, the end 1031 of the bridging electrode 103 extends to the outside of the insulating layer 104 and is electrically connected to the first semiconductor layer 111 of the first light-emitting unit 101; the other end 1031 of the bridging electrode 103 extends above the second mesa 1102 of the second light-emitting unit 102. A transparent conductive layer 114 is also formed above the second mesa 1102 of the second light-emitting unit 102. The transparent conductive layer 114 is located between the bridging electrode 103 and the insulating layer 104, and extends to the outside of the insulating layer 104 and is connected to the second semiconductor layer 113. The bridging electrode 103 is electrically connected to the second semiconductor layer 113 of the second light-emitting unit 102 through the transparent conductive layer 114.

[0079] Furthermore, such as Figure 2 As shown, when projected onto the surface of substrate 120, the projection area of ​​the arc-shaped connection portion 1032 lies within the projection area of ​​the insulating layer 104. In a direction parallel to the first side 107 of the high-voltage light-emitting diode, the projection outline of the insulating layer 104 coincides with the projection boundary of the high-voltage light-emitting diode. At the first mesa 1101 of the first light-emitting unit 101, the projection outline of the end portion 1031 of the bridging electrode 103 is located outside the projection outline of the insulating layer 104. At the second mesa 1102 of the second light-emitting unit 102, the projection outline of the insulating layer 104 is located between the projection outline of the end portion 1031 of the bridging electrode 103 and the projection outline of the transparent conductive layer 114. Furthermore, the projection outline of the transparent conductive layer 114 is located within the projection outline of the second mesa 1102. The aforementioned arrangement of the bridging electrode 103, the insulating layer 104, and the transparent conductive layer 114 ensures the electrical connection between the bridging electrode 103 and the first light-emitting unit 101 and the second light-emitting unit 102, while simultaneously increasing the lateral expansion of the current above the second mesa 1102.

[0080] Another optional example, such as Figure 4 As shown, in the direction parallel to the first side 107 of the high-voltage light-emitting diode, at the first mesa 1101 of the first light-emitting unit 101, the projected outline of the end 1031 of the bridging electrode 103 is located outside the projected outline of the insulating layer 104; at the second mesa 1102 of the second light-emitting unit 102, the projected outline of the end 1031 of the bridging electrode 103 is located between the projected outline of the insulating layer 104 and the projected outline of the transparent conductive layer 114, that is, the projected outline of the end 1031 of the bridging electrode 103 is located outside the projected outline of the insulating layer 104. Furthermore, the projected outline of the transparent conductive layer 114 is located within the projected outline of the second mesa 1102. This arrangement of the bridging electrode 103, the insulating layer 104, and the transparent conductive layer 114 also ensures the electrical connection between the bridging electrode 103 and the first light-emitting unit 101 and the second light-emitting unit 102, while simultaneously increasing the lateral expansion of the current above the second mesa 1102.

[0081] As described above, since the arc-shaped connection portion 1032 protrudes towards the first side 107 of the high-voltage light-emitting diode closest to it, the arc-shaped connection portion 1032 of the bridging electrode 103 is closer to the side of the high-voltage light-emitting diode and relatively farther away from the second side 108 opposite to the first side 107. Therefore, as Figure 2 As shown, the arc-shaped connecting portion 1032 of the bridging electrode 103 has a minimum distance D0 between its edge and the first side 107 of the high-voltage light-emitting diode in the corresponding area of ​​the isolation groove 105. The other edge opposite to this edge has a maximum distance D1 between its edge and the second side 108 opposite to the first side 107. In this embodiment, D1:D0 > 2:1, and further, greater than or equal to 3:1; greater than or equal to 4:1; greater than or equal to 5:1, etc. Further, in this embodiment, the light-emitting unit is preferably a small-sized light-emitting unit, such as a Mini light-emitting unit. Preferably, 50 μm ≤ D0 + D1 ≤ 100 μm, D0 ≥ 40 μm, and further, D0 ≥ 50 μm, 40 μm ≤ D0 ≤ 80 μm. The specific limitation of the minimum distance D0 ensures that there is sufficient space between the edge of the arc-shaped connection portion 1032 of the bridging electrode 103 and the edge of the high-voltage light-emitting diode to facilitate the action of the ejector pin, and ensures that the ejector pin does not act above the bridging electrode 103, preventing the bridging electrode 103 from cracking or breaking.

[0082] Similarly, Figure 2 As shown, at the first mesa 1101, there is a vertical distance D4 between the projected profile of the end 1031 of the bridging electrode 103 and the projected profile of the insulating layer 104, preferably 3 μm ≤ D4 ≤ 8 μm. In an optional example, such as... Figure 4 As shown, at the second mesa 1102 of the second light-emitting unit 102, when the projected outline of the end 1031 of the bridging electrode 103 is also located outside the projected outline of the insulating layer 104, the vertical distance between the two is also within the range of 3μm to 8μm. The above distance setting ensures that there is sufficient contact area between the bridging electrode 103 and the light-emitting unit, guaranteeing the reliability of the electrical connection between the bridging electrode 103 and the light-emitting unit.

[0083] Similarly, Figure 3As shown, a transparent conductive layer 114 is also formed above the second mesa 1102 of the first light-emitting unit 101. However, a current-blocking layer 115 is formed below the transparent conductive layer 114. The transparent conductive layer 114 encloses the current-blocking layer 115 and connects it to the second semiconductor layer 113. The current-blocking layer 115 prevents current concentration and facilitates current diffusion. The insulating layer 104 and the current-blocking layer 115 can be made of the same material or different materials. Both can form a single-layer or multi-layer structure. They are made of any one or more of SiO2, Ti3O5, SiN, and Al2O3, or other acceptable materials.

[0084] Refer again Figure 2 and Figure 3 The high-voltage light-emitting diode also includes a reflective layer 106 and an electrode structure. The reflective layer 106 is preferably an insulating reflective layer, such as a Bragg reflector (DBR), comprising alternating layers of materials with different refractive indices, such as a stacked structure composed of at least two of SiO2, SiN, TiO2, ZnO2, ZrO2, Cu2O3, or other suitable materials. More specifically, it can be a stacked structure formed by SiO2 and TiO2, with 10 to 30 sets of SiO2 / TiO2 stacks; this embodiment is not limited to this. The reflective layer 106 ensures the reflection effect of light radiated from the active layer 112, guaranteeing the light emission effect of the high-voltage light-emitting diode.

[0085] The aforementioned electrode structure includes a first electrode 116 and a second electrode 117. The first electrode 116 is electrically connected to the first semiconductor layer 111 at the first mesa 1101 of the second light-emitting unit 102, and the second electrode 117 is electrically connected to the second semiconductor layer 113 at the second mesa 1102 of the first light-emitting unit 101. Specifically, the first electrode 116 includes a first contact electrode 1161 and a first pad 1162, and the second electrode 117 includes a second contact electrode 1171 and a second pad 1172. The first contact electrode 1161 is formed above the first mesa 1101 of the second light-emitting unit 102 and is electrically connected to the first semiconductor layer 111; the second contact electrode 1171 is formed above the second mesa 1102 of the first light-emitting unit 101 and is electrically connected to the second semiconductor layer 113. A first through-hole 1061 and a second through-hole 1062 are formed in the reflective layer 106. The first through-hole 1061 is formed above the first contact electrode 1161, and the second through-hole 1062 is formed above the second contact electrode 1171. A first pad 1162 and a second pad 1172 are formed above the reflective layer 106 and are spaced apart from each other. The first pad 1162 is electrically connected to the first contact electrode 1161 through the first through-hole 1061, and the second pad 1172 is electrically connected to the second contact electrode 1171 through the second through-hole 1062. The first pad 1162 and the second pad 1172 may include one or more of Cr, Al, Ag, Ni, Ti, Pt, and Au, and may be a single-layer structure or a stacked structure. Preferably, the first pad 1162 and the second pad 1172, the first contact electrode 1161 and the second contact electrode 1162, and the bridging electrode 103 may be formed of the same material.

[0086] The above Figure 2 The example shown is a high-voltage light-emitting diode containing two light-emitting units. It can be understood that when the high-voltage light-emitting diode contains more than two light-emitting units, the first contact electrode 1161 and the second contact electrode 1171 are preferably formed at the corresponding positions of the first and last light-emitting units.

[0087] Example 2

[0088] This embodiment also provides a high-voltage light-emitting diode, such as... Figure 5 and Figure 6 As shown, this high-voltage light-emitting diode also includes a substrate 120 and N light-emitting units located above the substrate 120. Adjacent light-emitting units are spaced apart by isolation trenches 105 and connected sequentially by bridging electrodes 103 according to a preset arrangement direction. The similarities to other embodiments will not be repeated here; the differences are as follows:

[0089] like Figure 5 and Figure 6As shown, in this embodiment, the insulating layer 104 also extends to the edge of the high-voltage light-emitting diode in a direction parallel to the first side 107 of the high-voltage light-emitting diode. Specifically, as... Figure 5 As shown, the insulating layer 104 has through holes formed in the corresponding areas of the two ends 1031 of the bridging electrode 103, a third through hole 1041 is formed above the first mesa 1102 of the first light-emitting unit 101, and a fourth through hole 1042 is formed above the second mesa 1102 of the second light-emitting unit 102. The ends 1031 of the bridging electrode 103 are electrically connected to the first semiconductor layer 111 of the first light-emitting unit 101 and the second semiconductor layer 113 of the second light-emitting unit 102 through the third through hole 1041 and the fourth through hole 1042, respectively. Figure 6 As shown, projected onto the surface of substrate 120, the projected outline of the end 1031 of the bridging electrode 103 lies within the projected outlines of the third through hole 1041 and the fourth through hole 1042. Furthermore, there is a vertical distance D2 between the projected outlines of the third through hole 1041 and the fourth through hole 1042 and the projected outline of the end 1031 of the bridging electrode 103. Further, 3 μm ≤ D2 ≤ 8 μm. This vertical distance D2 ensures sufficient contact area between the bridging electrode 103 and the light-emitting unit, guaranteeing reliable electrical connection between the bridging electrode 103 and the light-emitting unit. Additionally, as... Figure 6 As shown, a transparent conductive layer 114 is formed above an insulating layer 104, and the first through-hole 1061 and the second through-hole 1062 in the reflective layer 106 also penetrate the insulating layer 104 to achieve electrical connection between the first pad 1162 and the first contact electrode, and electrical connection between the second pad 1172 and the second contact electrode 1171.

[0090] Example 3

[0091] This embodiment also provides a high-voltage light-emitting diode, such as... Figure 7 and Figure 8 As shown, this high-voltage light-emitting diode also includes a substrate 120 and N light-emitting units located above the substrate 120. Adjacent light-emitting units are spaced apart by isolation trenches 105 and connected sequentially by bridging electrodes 103 according to a preset arrangement direction. The similarities to other embodiments will not be repeated here; the differences are as follows:

[0092] like Figure 7 and Figure 8 As shown, in this embodiment, the insulating layer 104 also extends to the edge of the high-voltage light-emitting diode in a direction parallel to the first side 107 of the high-voltage light-emitting diode. Specifically, as... Figure 7As shown, the insulating layer 104 has through holes formed in the corresponding areas of the two ends 1031 of the bridging electrode 103, a third through hole 1041 is formed above the first mesa 1102 of the first light-emitting unit 101, and a fourth through hole 1042 is formed above the second mesa 1102 of the second light-emitting unit 102. The ends 1031 of the bridging electrode 103 are electrically connected to the first semiconductor layer 111 of the first light-emitting unit 101 and the second semiconductor layer 113 of the second light-emitting unit 102 through the third through hole 1041 and the fourth through hole 1042, respectively. Figure 8 As shown, projected onto the surface of substrate 120, the projected outlines of the third through-hole 1041 and the fourth through-hole 1042 are located within the projected outline of the end 1031 of the bridging electrode 103, and there is a vertical distance D3 between the projected outlines of the third through-hole 1041 and the fourth through-hole 1042 and the projected outline of the end 1031 of the bridging electrode 103. Further, 3 μm ≤ D3 ≤ 8 μm. This vertical distance D3 ensures sufficient contact area between the bridging electrode 103 and the light-emitting unit, guaranteeing the reliability of the electrical connection between the bridging electrode 103 and the light-emitting unit. Additionally, as... Figure 8 As shown, a transparent conductive layer 114 is formed above an insulating layer 104, and the first through-hole 1061 and the second through-hole 1062 in the reflective layer 106 also penetrate the insulating layer 104 to achieve electrical connection between the first pad 1162 and the first contact electrode, and electrical connection between the second pad 1172 and the second contact electrode 1171.

[0093] Example 4

[0094] This embodiment provides a light-emitting device, as shown in the reference. Figure 11 The light-emitting device 200 includes a packaging substrate 201 and at least one high-voltage light-emitting diode 202 disposed on the packaging substrate 201. The high-voltage light-emitting diode 202 includes any one or more high-voltage light-emitting diodes as described in the foregoing embodiments. A circuit layer 203 is formed in the packaging substrate 201, and the high-voltage light-emitting diode 202 is electrically connected to the circuit layer 203 through an electrode structure. The light-emitting device 200 can be an LED backlight device, an RGB display device, or other light-emitting devices. Since the light-emitting device includes the high-voltage flip-chip LED as described in the foregoing embodiments, it also has the beneficial effects of the foregoing embodiments.

[0095] In summary, the high-voltage light-emitting diode and light-emitting device provided in this application have high industrial application value because they effectively overcome the various shortcomings of the prior art.

[0096] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A high-voltage light-emitting diode, characterized in that, include: Substrate; N light-emitting units are arranged on the substrate at intervals, with adjacent light-emitting units separated by isolation grooves, where N≥2; The bridging electrode, viewed from a plane perpendicular to the surface of the substrate, has an end and an arc-shaped connection between the ends, the end being electrically connected to an adjacent light-emitting unit; the arc-shaped connection protrudes toward the side of the nearest high-voltage light-emitting diode; In the region corresponding to the isolation groove, the edge of the arc-shaped connecting part has a minimum distance D0 from one side of the high-voltage light-emitting diode and a maximum distance D1 from the opposite side of the one side, where D1:D0>2:

1.

2. The high-voltage light-emitting diode according to claim 1, characterized in that, It also includes an insulating layer located below the bridging electrode; projected onto the plane where the surface of the substrate lies, the projection area of ​​the insulating layer has a portion that overlaps with the projection area of ​​the arc-shaped connection.

3. The high-voltage light-emitting diode according to claim 1, characterized in that, It also includes an insulating layer located below the bridging electrode; projected onto the plane where the surface of the substrate lies, at least the projection area of ​​the arcuate connection portion of the bridging electrode is located within the projection area of ​​the insulating layer.

4. The high-voltage light-emitting diode according to claim 1, characterized in that, Viewed from a plane perpendicular to the surface of the substrate, the insulating layer covers the edge of the high-voltage light-emitting diode along a direction perpendicular to one side of the high-voltage light-emitting diode.

5. The high-voltage light-emitting diode according to claim 1, characterized in that, D1≥40 μm; 50 μm≤D1+D0≤100 μm.

6. The high-voltage light-emitting diode according to claim 1, characterized in that, Projected onto the plane containing the surface of the substrate, in a direction parallel to one side of the high-voltage light-emitting diode, the projected profile of the end of the bridging electrode lies outside the projected profile of the insulating layer.

7. The high-voltage light-emitting diode according to claim 1, characterized in that, Projecting onto the surface of the substrate, in a direction parallel to one side of the high-voltage light-emitting diode, the minimum distance between the projected profile of the end of the bridging electrode and the projected profile of the insulating layer is D2, where 3 μm ≤ D2 ≤ 8 μm.

8. The high-voltage light-emitting diode according to claim 1, characterized in that, The insulating layer extends below the bridging electrode to cover the surface and sidewalls of the high-voltage light-emitting diode, forming a through hole above the light-emitting unit so that the end of the bridging electrode is electrically connected to the light-emitting unit.

9. The high-voltage light-emitting diode according to claim 8, characterized in that, The projection of the end of the bridging electrode onto the surface of the substrate lies within the projection outline of the via in the insulating layer.

10. The high-voltage light-emitting diode according to claim 8, characterized in that, The projection of the via in the insulating layer onto the surface of the substrate is such that the projection profile of the via lies within the projection profile of the end of the bridging electrode.

11. The high-voltage light-emitting diode according to claim 9 or 10, characterized in that, The vertical distance between the projected profile of the via in the insulating layer and the projected profile of the end of the bridging electrode is D3, where 3 μm ≤ D3 ≤ 8 μm, when projected onto the surface of the substrate.

12. The high-voltage light-emitting diode according to claim 11, characterized in that, The light-emitting unit includes: A semiconductor stack is formed on the substrate, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially; the semiconductor stack has a first mesa and a second mesa, the first mesa exposing a portion of the first semiconductor layer, and the second mesa being the semiconductor stack immediately adjacent to the first mesa; A transparent conductive layer is formed above the second mesa of each of the light-emitting units and below the insulating layer; A first electrode is formed above the first mesa of the Nth light-emitting unit to form an electrical connection with the first semiconductor layer; The second electrode is formed above the second mesa of the first light-emitting unit and is electrically connected to the second semiconductor layer through the transparent conductive layer.

13. The high-voltage light-emitting diode according to claim 7, characterized in that, The light-emitting unit includes: A semiconductor stack is formed on the substrate, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially; the semiconductor stack has a first mesa and a second mesa, the first mesa exposing a portion of the first semiconductor layer, and the second mesa being the semiconductor stack immediately adjacent to the first mesa; A current blocking layer is located above the second mesa of the first light-emitting unit; A transparent conductive layer is located above the second mesa of each of the light-emitting units. In the first light-emitting unit, it is located above the current blocking layer. In the other light-emitting units besides the first light-emitting unit, the transparent conductive layer is located between the bridging electrode and the insulating layer, and the sidewall of the transparent conductive layer surrounding the insulating layer is formed above the second semiconductor layer at the second mesa. The first electrode is located above the first mesa of the Nth light-emitting unit to form an electrical connection with the first semiconductor layer; The second electrode is located above the second mesa of the first light-emitting unit and is electrically connected to the second semiconductor layer through the transparent conductive layer.

14. The high-voltage light-emitting diode according to claim 13, characterized in that, Projected onto the surface of the substrate, at the second mesa of the remaining light-emitting units other than the first light-emitting unit, the projected outline of the insulating layer lies between the projected outline of the transparent conductive layer and the projected outline of the end of the bridging electrode.

15. A light-emitting device, characterized in that, include: Packaging substrate; At least one high-voltage light-emitting diode is disposed on the surface of the packaging substrate, and the packaging substrate and the electrode structure of the high-voltage light-emitting diode are electrically connected; the high-voltage light-emitting diode is the high-voltage light-emitting diode according to any one of claims 1 to 14.

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