Junction temperature detection control circuit and radio frequency device

Abstract

This invention provides a junction temperature detection and control circuit and an RF device. The junction temperature detection and control circuit is used to realize on-chip junction temperature detection of an RF power amplifier. The RF power amplifier includes an input matching circuit, an RF power amplification unit, a bias circuit, and an output matching circuit. The junction temperature detection and control circuit includes a temperature detection circuit, a controller circuit, and a gain attenuation circuit. The temperature detection circuit detects and acquires the operating temperature of the RF power amplification unit and outputs a corresponding detection voltage based on the operating temperature. The controller circuit dynamically adjusts and outputs first and second control voltages based on the magnitude of the detection voltage. The gain attenuation circuit shunts the RF signal at the input of the RF power amplification unit according to the magnitude of the first control voltage. The bias circuit also adjusts the operating voltage according to the magnitude of the second control voltage. This invention enables the power amplifier to adaptively increase its gain based on the operating temperature, avoiding component damage.

Description

Technical Field

[0001] This invention relates to the field of radio frequency power amplifier technology, and in particular to a junction temperature detection and control circuit and radio frequency device. Background Technology

[0002] Radio frequency (RF) power amplifiers (PAs) are core components in systems such as wireless communication, radar, and satellite navigation, used to amplify RF signals to drive loads. A typical RF power amplifier chip architecture mainly consists of an input matching circuit, an RF power amplification unit, an output matching circuit, and a bias circuit. During operation, the RF signal is fed into the RF power amplification unit via the input matching circuit. The bias circuit provides a stable quiescent operating point for the amplifier unit. After amplification, the signal is fed to the load via the output matching circuit, thus achieving the power amplification function.

[0003] Most existing RF power amplifier chips use transistors (HBTs) as the core amplification unit. Their architecture focuses on signal amplification and impedance matching optimization, but does not integrate real-time junction temperature monitoring and protection mechanisms. The circuits only maintain the operating point through conventional bias adjustment, relying on external heat dissipation and passive protection, and cannot actively sense the internal temperature of the device.

[0004] When the input signal power is too high, the output is mismatched, or the load is abnormal, the junction temperature of the transistor device will rise rapidly due to the surge in power consumption. High temperature can cause device performance drift and gain reduction, and in severe cases, it can lead to thermal breakdown, causing irreversible damage to the transistor, directly resulting in the failure of the RF power amplifier chip and system interruption.

[0005] Therefore, it is necessary to design a circuit structure with on-chip junction temperature detection to solve the above-mentioned technical problems. Summary of the Invention

[0006] This invention provides a junction temperature detection and control circuit and an RF device, aiming to solve the technical problem that existing RF power amplifiers are prone to performance degradation or even direct damage due to junction temperature.

[0007] To address the aforementioned technical problems, in a first aspect, the present invention provides a junction temperature detection and control circuit for realizing on-chip junction temperature detection of an RF power amplifier. The RF power amplifier includes an input matching circuit, an RF power amplification unit, a bias circuit, and an output matching circuit. The RF power amplification unit is implemented based on a transistor. The input matching circuit is used to achieve input impedance matching for the RF power amplification unit. The bias circuit is used to provide an operating voltage for the RF power amplification unit. The output matching circuit is used to achieve output impedance matching for the RF power amplification unit.

[0008] The junction temperature detection and control circuit includes a temperature detection circuit, a controller circuit, and a gain attenuation circuit, wherein:

[0009] The temperature detection circuit is used to detect and obtain the operating temperature of the radio frequency power amplifier unit, and output a corresponding detection voltage according to the operating temperature;

[0010] The controller circuit is used to dynamically adjust and output a first control voltage and a second control voltage according to the magnitude of the detected voltage;

[0011] The gain attenuation circuit is used to shunt the radio frequency signal at the input of the radio frequency power amplifier unit according to the magnitude of the first control voltage.

[0012] The bias circuit is also used to adjust the operating voltage according to the magnitude of the second control voltage.

[0013] Furthermore, the temperature detection circuit includes a first transistor and a second transistor, wherein the base of the first transistor is connected to the collector of the first transistor, and the emitter of the first transistor is connected to the base of the second transistor.

[0014] The base of the second transistor is connected to the collector of the second transistor, and the emitter of the second transistor is grounded;

[0015] The base of the first transistor is connected to a fixed current source, and the voltage at the base of the first transistor is used as the detection voltage.

[0016] Furthermore, the controller circuit includes a comparator and a low-dropout linear regulator. The first input terminal of the comparator is used to connect to the detected voltage, the second input terminal of the comparator is used to connect to an external fixed threshold voltage signal, and the output terminal of the comparator is used to output the first control voltage.

[0017] The input terminal of the low-dropout linear regulator is used to connect to the first control voltage, and the output terminal of the low-dropout linear regulator is used to output the second control voltage.

[0018] Furthermore, the gain attenuation circuit includes a third transistor, a first resistor, and a first inductor. The base of the third transistor is used to connect to the first control voltage, the emitter of the third transistor is grounded, and the collector of the third transistor is connected to the first end of the first resistor.

[0019] The second end of the first resistor is connected to the first end of the first inductor;

[0020] The second end of the first inductor is connected to the input end of the radio frequency power amplifier unit.

[0021] Furthermore, the bias circuit includes a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second resistor, and a third resistor. The emitter of the fourth transistor is grounded, and the base of the fourth transistor is connected to the collector of the fourth transistor.

[0022] The emitter of the fifth transistor is connected to the collector of the fourth transistor, and the base of the fifth transistor is connected to the collector of the fifth transistor.

[0023] The base of the sixth transistor is connected to the collector of the fifth transistor. The collector of the sixth transistor is used to connect to an external bias voltage source. The emitter of the sixth transistor is connected to the first end of the third resistor. The second end of the third resistor is connected to the input end of the radio frequency power amplifier unit.

[0024] The first terminal of the first capacitor is connected to the collector of the fifth transistor, and the second terminal of the first capacitor is grounded.

[0025] The first end of the second resistor is connected to the collector of the fifth transistor, and the second end of the second resistor is used to connect to the second control voltage.

[0026] Furthermore, the input matching circuit includes a second inductor and a second capacitor, with the first end of the second inductor grounded and the second end of the second inductor connected to the first end of the second capacitor;

[0027] The first end of the second capacitor serves as the input terminal of the radio frequency power amplifier, used to receive radio frequency input signals, and the second end of the second capacitor is connected to the input terminal of the radio frequency power amplifier unit.

[0028] Furthermore, the output matching circuit includes a third capacitor, a fourth capacitor, a third inductor, and a fourth inductor. The first terminal of the third capacitor is connected to the output terminal of the RF power amplifier unit, and the second terminal of the third capacitor is connected to the first terminal of the fourth inductor.

[0029] The first terminal of the fourth capacitor is grounded, and the second terminal of the fourth capacitor is connected to the second terminal of the fourth inductor;

[0030] The first terminal of the third inductor is grounded, and the second terminal of the third inductor is connected to the first terminal of the fourth inductor;

[0031] The second end of the fourth inductor serves as the output end of the radio frequency power amplifier, used to output the radio frequency amplified signal after being amplified by the radio frequency power amplifier unit.

[0032] Secondly, the present invention also provides a radio frequency (RF) device, the RF device including an RF power amplifier and a junction temperature detection and control circuit as described above, the junction temperature detection and control circuit being used to detect the operating temperature of the RF power amplifier, and to adjust the gain of the RF signal input to the RF power amplifier and the magnitude of the bias operating voltage provided to the RF power amplifier according to the operating temperature.

[0033] The beneficial effect achieved by this invention is that it proposes a junction temperature detection and control circuit for an RF power amplifier. This junction temperature detection and control circuit obtains the operating temperature of the RF power amplifier unit and adjusts the RF signal power and bias voltage of the input RF power amplifier unit, so that the RF power amplifier unit can adaptively adjust the gain mode according to the operating temperature, avoid component damage caused by junction temperature, and improve the working stability. Attached Figure Description

[0034] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0035] Figure 1 This is a block diagram of the junction temperature detection and control circuit provided in this embodiment of the invention when applied to an RF power amplifier;

[0036] Figure 2 This is a circuit diagram of the temperature detection circuit in the junction temperature detection and control circuit provided in the embodiment of the present invention;

[0037] Figure 3 This is a circuit diagram of the controller circuit in the junction temperature detection and control circuit provided in the embodiment of the present invention;

[0038] Figure 4 This is a circuit diagram of the gain attenuation circuit in the junction temperature detection and control circuit provided in the embodiment of the present invention;

[0039] Figure 5 This is a circuit diagram of the bias circuit in the radio frequency power amplifier provided in the embodiment of the present invention;

[0040] Figure 6 This is a circuit diagram of the input matching circuit in the radio frequency power amplifier provided in an embodiment of the present invention;

[0041] Figure 7 This is a circuit diagram of the output matching circuit in the radio frequency power amplifier provided in an embodiment of the present invention. Detailed Implementation

[0042] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0043] The specific embodiments / examples described herein are specific implementations of the present invention, used to illustrate the concept of the invention, and are illustrative and exemplary, and should not be construed as limiting the implementation methods or scope of the present invention. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein, all of which are within the protection scope of the present invention.

[0044] Example 1

[0045] Please refer to Figure 1 , Figure 1 This is a block diagram of the junction temperature detection and control circuit provided in this embodiment of the invention when applied to an RF power amplifier. The junction temperature detection and control circuit 200 is used to realize on-chip junction temperature detection of the RF power amplifier 100. The RF power amplifier 100 includes an input matching circuit 101, an RF power amplification unit 102, a bias circuit 103, and an output matching circuit 104. The RF power amplification unit 102 is implemented based on a transistor. The input matching circuit 101 is used to achieve input impedance matching for the RF power amplification unit 102. The bias circuit 103 is used to provide operating voltage for the RF power amplification unit 102. The output matching circuit 104 is used to achieve output impedance matching for the RF power amplification unit 102.

[0046] The junction temperature detection and control circuit 200 includes a temperature detection circuit 201, a controller circuit 202, and a gain attenuation circuit 203, wherein:

[0047] The temperature detection circuit 201 is used to detect and obtain the operating temperature of the radio frequency power amplifier unit 102, and output a corresponding detection voltage V1 according to the operating temperature;

[0048] The controller circuit 202 is used to dynamically adjust and output a first control voltage Va and a second control voltage Vb according to the magnitude of the detection voltage V1.

[0049] The gain attenuation circuit 203 is used to shunt the radio frequency signal at the input terminal of the radio frequency power amplifier unit 102 according to the magnitude of the first control voltage Va.

[0050] The bias circuit 103 is also used to adjust the operating voltage according to the magnitude of the second control voltage Vb.

[0051] Please refer to Figure 2The temperature detection circuit 201 includes a first transistor HBT1 and a second transistor HBT2. The base of the first transistor HBT1 is connected to the collector of the first transistor HBT1, and the emitter of the first transistor HBT1 is connected to the base of the second transistor HBT2.

[0052] The base of the second transistor HBT2 is connected to the collector of the second transistor HBT2, and the emitter of the second transistor HBT2 is grounded;

[0053] The temperature detection circuit 201 is arranged adjacent to the radio frequency power amplifier unit 102. The base of the first transistor HBT1 is connected to a fixed current source I, and the voltage at the base of the first transistor HBT1 is used as the detection voltage V1.

[0054] like Figure 1 As shown, in this embodiment of the invention, the temperature detection circuit 201 and the radio frequency power amplifier unit 102 are not directly connected through a conduction circuit, but are arranged adjacent to each other in the physical circuit structure, such as attached or close together. In this embodiment of the invention, the temperature detection circuit 201 includes transistors (first transistor HBT1 and second transistor HBT2) with their base and collector shorted. This effectively uses the transistor as a diode. Since the transistor itself has the characteristic that its conduction voltage changes with temperature, the purpose of arranging the temperature detection circuit 201 and the radio frequency power amplifier unit 102 adjacently is to enable the temperature detection circuit 201 to sense the temperature change of the radio frequency power amplifier unit 102, thereby achieving temperature detection.

[0055] Furthermore, the transistors (first transistor HBT1 and second transistor HBT2) in the temperature detection circuit 201 are placed near the power transistor in the RF power amplifier unit 102. Utilizing the characteristic that the transistor's voltage changes with temperature (the higher the temperature, the lower the voltage across it), the junction temperature of the power transistor in the RF power amplifier unit 102 can be obtained by detecting the voltage across the diode circuit formed by the transistor. This changing voltage serves as the detection voltage V1, which is output from the base of the first transistor HBT1 to the controller circuit 202.

[0056] For details, please refer to Figure 3 The controller circuit 202 includes a comparator (COMP) and a low dropout linear regulator (LDO). The first input terminal of the comparator is used to connect to the detection voltage V1, the second input terminal of the comparator is used to connect to an external fixed threshold voltage signal (Vs), and the output terminal of the comparator is used to output the first control voltage Va.

[0057] The input terminal of the low-dropout linear regulator is used to connect the first control voltage Va, and the output terminal of the low-dropout linear regulator is used to output the second control voltage Vb.

[0058] The comparator compares the detected voltage V1 with an externally fixed threshold to determine the high or low level of the first control voltage Va. Specifically, the comparator's output is a judgment result: a high-level signal indicates a positive judgment result, and a low-level signal indicates a negative judgment result. In this embodiment of the invention, the signal output by the comparator when the detected voltage V1 is less than the externally fixed threshold voltage signal is used as the first control voltage Va, to reflect the design concept of implementing control based on the detected voltage V1.

[0059] The low-dropout linear regulator processes the first control voltage Va output by the comparator into a cleaner and more stable second control voltage Vb. It does not change the logic, but only regulates, filters, and improves the driving capability, so that the subsequent circuit logic can work stably and reliably.

[0060] Preferably, since the controller circuit 202 in this embodiment of the invention is implemented based on integrated circuit elements, during implementation, the fixed current source I of the temperature detection circuit 201 can be set in the controller circuit 202 to improve the integration.

[0061] For details, please refer to Figure 4 The gain attenuation circuit 203 includes a third transistor HBT3, a first resistor R1 and a first inductor L1. The base of the third transistor HBT3 is used to connect to the first control voltage Va. The emitter of the third transistor HBT3 is grounded. The collector of the third transistor HBT3 is connected to the first end of the first resistor R1.

[0062] The second end of the first resistor R1 is connected to the first end of the first inductor L1;

[0063] The second end of the first inductor L1 is connected to the input end of the radio frequency power amplifier unit 102.

[0064] Referring to the description in the above embodiments, the radio frequency power amplification unit 102 in the embodiments of the present invention is implemented based on a transistor. For example, when the radio frequency power amplification unit 102 includes a transistor, the base of the transistor serves as the input terminal of the radio frequency power amplification unit 102, and the collector of the transistor serves as the output terminal of the radio frequency power amplification unit 102.

[0065] Please refer to Figure 1As shown in the connection diagram, when the first control voltage Va is at an effective control level, the third transistor HBT3 is turned on, and the gain attenuation circuit 203 attenuates the RF signal at the input terminal of the RF power amplifier unit 102. At this time, the RF signal at the input terminal of the RF power amplifier unit 102 is shunted to ground through the gain attenuation circuit 203, and only a small amount of RF signal enters the RF power amplifier unit 102. Furthermore, due to the reduction in input signal power, the RF power amplifier unit 102 enters a low-power operating state, thereby reducing the heat generation of the RF power amplifier unit 102 and avoiding damage due to overheating.

[0066] Specifically, the impedance Z of the gain attenuation circuit 203 can be expressed as:

[0067] Z = jωL1 + R1 + Rce;

[0068] Where ω is the operating angular frequency of the radio frequency signal, L1 is the inductance value of the first inductor L1 (which is relatively small), R1 is the resistance value of the first resistor R1 (which is also relatively small), and Rce is the equivalent resistance between the collector and emitter of the third transistor HBT3.

[0069] When the temperature of the RF power amplifier unit 102 exceeds a preset threshold, the detection voltage V1 output by the temperature detection circuit 201 is input to the controller circuit 202. The controller circuit 202 outputs a high-level first control voltage Va to the base of the third transistor HBT3, turning on the third transistor HBT3. At this time, the equivalent resistance Rce between the collector and emitter of the third transistor HBT3 is very small, satisfying that Rce is much smaller than R1. The overall impedance Z of the gain attenuation circuit 203 is low, so that most of the RF signal at the input terminal of the RF power amplifier unit 102 is shunted to ground through the gain attenuation circuit 203, thereby attenuating the input RF signal and reducing the gain of the RF power amplifier unit 102.

[0070] When the controller circuit 202 outputs a low-level first control voltage Va, the third transistor HBT3 is cut off, and its equivalent resistance Rce between the collector and emitter is very large, satisfying that Rce is greater than R1. The overall impedance Z of the gain attenuation circuit 203 is high impedance, and the input RF signal is hardly shunted through the gain attenuation circuit 203. The RF power amplifier unit 102 maintains normal gain operation.

[0071] In the embodiments of the present invention, please refer to Figure 5 The bias circuit 103 includes a fourth transistor HBT4, a fifth transistor HBT5, a sixth transistor HBT6, a first capacitor C1, a second resistor R2 and a third resistor R3. The emitter of the fourth transistor HBT4 is grounded, and the base of the fourth transistor HBT4 is connected to the collector of the fourth transistor HBT4.

[0072] The emitter of the fifth transistor HBT5 is connected to the collector of the fourth transistor HBT4, and the base of the fifth transistor HBT5 is connected to the collector of the fifth transistor HBT5.

[0073] The base of the sixth transistor HBT6 is connected to the collector of the fifth transistor HBT5. The collector of the sixth transistor HBT6 is used to connect to an external bias voltage source VBs. The emitter of the sixth transistor HBT6 is connected to the first end of the third resistor R3. The second end of the third resistor R3 is connected to the input end of the radio frequency power amplifier unit 102.

[0074] The first terminal of the first capacitor C1 is connected to the collector of the fifth transistor HBT5, and the second terminal of the first capacitor C1 is grounded.

[0075] The first end of the second resistor R2 is connected to the collector of the fifth transistor HBT5, and the second end of the second resistor R2 is used to connect the second control voltage Vb.

[0076] Based on the structure described in the above embodiments, the bias circuit 103 is used to provide a stable and adjustable static bias current for the RF power amplifier unit 102. Specifically, the fourth transistor HBT4 and the fifth transistor HBT5 constitute a current reference structure to provide a stable bias reference; the second resistor R2 is connected to the second control voltage Vb to adjust the bias voltage; the first capacitor C1 is used to filter the bias voltage to improve bias stability; the sixth transistor HBT6 is used to provide bias current to the RF power amplifier unit 102 according to the bias voltage; and the third resistor R3 is used to smoothly deliver the bias current to the input terminal of the RF power amplifier unit 102.

[0077] When the second control voltage Vb decreases, the bias current provided by the sixth transistor HBT6 decreases, the static operating point of the RF power amplifier unit 102 decreases, the gain decreases, and the output power decreases, thereby entering a low-power operating mode, reducing power consumption and heat generation, and realizing overheat protection of the RF power amplifier unit 102.

[0078] In the embodiments of the present invention, please refer to Figure 6 The input matching circuit 101 includes a second inductor L2 and a second capacitor C2. The first end of the second inductor L2 is grounded, and the second end of the second inductor L2 is connected to the first end of the second capacitor C2.

[0079] The first end of the second capacitor C2 serves as the input terminal of the RF power amplifier 100, used to receive the RF input signal RFin, and the second end of the second capacitor C2 is connected to the input terminal of the RF power amplifier unit 102.

[0080] In the embodiments of the present invention, please refer to Figure 7 The output matching circuit 104 includes a third capacitor C3, a fourth capacitor C4, a third inductor L3 and a fourth inductor L4. The first end of the third capacitor C3 is connected to the output end of the radio frequency power amplifier unit 102, and the second end of the third capacitor C3 is connected to the first end of the fourth inductor L4.

[0081] The first terminal of the fourth capacitor C4 is grounded, and the second terminal of the fourth capacitor C4 is connected to the second terminal of the fourth inductor L4.

[0082] The first terminal of the third inductor L3 is grounded, and the second terminal of the third inductor L3 is connected to the first terminal of the fourth inductor L4.

[0083] The second end of the fourth inductor L4 serves as the output end of the radio frequency power amplifier 100, used to output the radio frequency amplified signal RFout after being amplified by the radio frequency power amplification unit 102.

[0084] In this embodiment of the invention, the input matching circuit 101 adopts an LC matching structure to match the 50Ω system impedance of the external radio frequency input signal to the input impedance of the radio frequency power amplifier unit 102, thereby achieving impedance conjugate matching, improving the transmission efficiency of the radio frequency signal, reducing input signal reflection, and enhancing the gain and stability of the radio frequency power amplifier unit 102.

[0085] The output matching circuit 104 adopts a CLLC matching structure to match the output impedance of the RF power amplifier unit 102 to the external output 50Ω system impedance, thereby achieving output impedance matching, ensuring that the amplified RF power can be output efficiently, reducing power reflection, and improving power-added efficiency and output power stability.

[0086] The beneficial effect achieved by this invention is that it proposes a junction temperature detection and control circuit for an RF power amplifier. This junction temperature detection and control circuit obtains the operating temperature of the RF power amplifier unit and adjusts the RF signal power and bias voltage of the input RF power amplifier unit, so that the RF power amplifier unit can adaptively adjust the gain mode according to the operating temperature, avoid component damage caused by junction temperature, and improve the working stability.

[0087] Example 2

[0088] This invention also provides a radio frequency (RF) device, which includes an RF power amplifier 100 and a junction temperature detection and control circuit 200 as described in Embodiment 1 above. It is understood that, based on the structure of the junction temperature detection and control circuit 200, the RF device can adjust the RF signal power and bias voltage input to the RF power amplifier unit by acquiring the operating temperature of the RF power amplifier unit in the RF power amplifier 100. This allows the RF power amplifier unit to adaptively adjust its gain mode according to the operating temperature, avoiding component damage caused by junction temperature and improving operational stability. Referring to the description in the above embodiments, further details are omitted here.

[0089] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0090] The embodiments of the present invention have been described above with reference to the accompanying drawings. The disclosed embodiments are merely preferred embodiments of the present invention. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many equivalent changes in form under the guidance of the present invention without departing from the spirit and scope of the claims. All such changes are within the protection scope of the present invention.

Claims

1. A junction temperature detection and control circuit for realizing on-chip junction temperature detection of an RF power amplifier, wherein the RF power amplifier includes an input matching circuit, an RF power amplification unit, a bias circuit, and an output matching circuit, the RF power amplification unit is implemented based on a transistor, the input matching circuit is used to achieve input impedance matching for the RF power amplification unit, the bias circuit is used to provide an operating voltage for the RF power amplification unit, and the output matching circuit is used to achieve output impedance matching for the RF power amplification unit; characterized in that, The junction temperature detection and control circuit includes a temperature detection circuit, a controller circuit, and a gain attenuation circuit, wherein: The temperature detection circuit is used to detect and obtain the operating temperature of the radio frequency power amplifier unit, and output a corresponding detection voltage according to the operating temperature; The controller circuit is used to dynamically adjust and output a first control voltage and a second control voltage according to the magnitude of the detected voltage; The gain attenuation circuit is used to shunt the radio frequency signal at the input of the radio frequency power amplifier unit according to the magnitude of the first control voltage. The bias circuit is also used to adjust the operating voltage according to the magnitude of the second control voltage; The controller circuit includes a comparator and a low-dropout linear regulator. The first input terminal of the comparator is used to connect to the detected voltage, the second input terminal of the comparator is used to connect to an external fixed threshold voltage signal, and the output terminal of the comparator is used to output the first control voltage. The input terminal of the low-dropout linear regulator is used to connect to the first control voltage, and the output terminal of the low-dropout linear regulator is used to output the second control voltage; The gain attenuation circuit includes a third transistor, a first resistor, and a first inductor. The base of the third transistor is used to connect to the first control voltage, the emitter of the third transistor is grounded, and the collector of the third transistor is connected to the first end of the first resistor. The second end of the first resistor is connected to the first end of the first inductor; The second end of the first inductor is connected to the input end of the radio frequency power amplifier unit.

2. The junction temperature detection control circuit according to claim 1, characterized by The temperature detection circuit includes a first transistor and a second transistor, wherein the base of the first transistor is connected to the collector of the first transistor, and the emitter of the first transistor is connected to the base of the second transistor. The base of the second transistor is connected to the collector of the second transistor, and the emitter of the second transistor is grounded; The base of the first transistor is connected to a fixed current source, and the voltage at the base of the first transistor is used as the detection voltage.

3. The junction temperature detection control circuit according to claim 1, wherein The bias circuit includes a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second resistor, and a third resistor; The emitter of the fourth transistor is grounded, and the base of the fourth transistor is connected to the collector of the fourth transistor. The emitter of the fifth transistor is connected to the collector of the fourth transistor, and the base of the fifth transistor is connected to the collector of the fifth transistor. The base of the sixth transistor is connected to the collector of the fifth transistor. The collector of the sixth transistor is used to connect to an external bias voltage source. The emitter of the sixth transistor is connected to the first end of the third resistor. The second end of the third resistor is connected to the input end of the radio frequency power amplifier unit. The first terminal of the first capacitor is connected to the collector of the fifth transistor, and the second terminal of the first capacitor is grounded. The first end of the second resistor is connected to the collector of the fifth transistor, and the second end of the second resistor is used to connect to the second control voltage.

4. The junction temperature detection control circuit according to claim 1, characterized by The input matching circuit includes a second inductor and a second capacitor, with the first end of the second inductor grounded and the second end of the second inductor connected to the first end of the second capacitor. The first end of the second capacitor serves as the input terminal of the radio frequency power amplifier, used to receive radio frequency input signals, and the second end of the second capacitor is connected to the input terminal of the radio frequency power amplifier unit.

5. The junction temperature detection and control circuit according to claim 1, characterized in that, The output matching circuit includes a third capacitor, a fourth capacitor, a third inductor, and a fourth inductor. The first terminal of the third capacitor is connected to the output terminal of the RF power amplifier unit, and the second terminal of the third capacitor is connected to the first terminal of the fourth inductor. The first terminal of the fourth capacitor is grounded, and the second terminal of the fourth capacitor is connected to the second terminal of the fourth inductor; The first terminal of the third inductor is grounded, and the second terminal of the third inductor is connected to the first terminal of the fourth inductor; The second end of the fourth inductor serves as the output end of the radio frequency power amplifier, used to output the radio frequency amplified signal after being amplified by the radio frequency power amplifier unit.

6. A radio frequency device, characterized in that, The radio frequency device includes a radio frequency power amplifier and a junction temperature detection and control circuit as described in any one of claims 1 to 5. The junction temperature detection and control circuit is used to detect the operating temperature of the radio frequency power amplifier and adjust the gain of the radio frequency signal input to the radio frequency power amplifier and the magnitude of the bias operating voltage provided to the radio frequency power amplifier according to the operating temperature.

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