Temperature compensation crystal oscillator wafer size configuration method and system based on temperature distribution

Abstract

The invention provides a temperature distribution-based temperature compensation crystal oscillator wafer size configuration method and system, and the method comprises the steps: obtaining a heat transfer correlation factor of a pedestal and a wafer; optimizing the contact area of the base and the wafer based on the heat transfer correlation factors; according to the optimized contact area and the frequency requirement of the temperature compensation crystal oscillator, the target size of the wafer is configured, and according to the temperature distribution-based temperature compensation crystal oscillator wafer size configuration method and system provided by the invention, high-sensitivity monitoring, low-power-consumption long-period operation, flexible point distribution and remote grading alarm can be realized in a complex environment; therefore, the fuel gas safety management level of the residential area is improved.

Description

Technical Field

[0001] This application belongs to the field of crystal oscillator debugging, and in particular relates to a method and system for configuring the size of a temperature-compensated crystal oscillator wafer based on temperature distribution. Background Technology

[0002] A temperature-compensated crystal oscillator (TCC) is an electronic component that uses compensation technology to counteract the effect of temperature on frequency. It employs analog, digital, or microprocessor-based compensation methods, dynamically adjusting the load capacitance of the oscillation circuit through a thermistor network or digitally controlled capacitor array. Because ordinary crystal oscillators are significantly affected by ambient temperature, TCCs can adjust the load capacitance within a certain temperature range, thereby offsetting the temperature-dependent frequency changes and achieving frequency stability. The primary component of a TCC is a quartz resonator.

[0003] The selection of quartz crystal wafer size for temperature-compensated crystal oscillators is usually based on past experience, lacking a clear configuration method. This method leads to low yield rates when encountering products with different requirements, necessitating repeated trials and wasting raw materials, thus exhibiting numerous shortcomings. Summary of the Invention

[0004] This application provides a method and system for configuring the size of temperature-compensated crystal oscillators based on temperature distribution. This can solve the problem that current temperature-compensated crystal oscillators often have low pass rates when selecting the size of quartz crystals for products with different requirements, requiring repeated trials and wasting raw materials.

[0005] In a first aspect, a method for configuring the size of a temperature-compensated crystal oscillator wafer based on temperature distribution includes: To determine the factors related to heat transfer between the base and the chip; The contact area between the base and the wafer is optimized based on the aforementioned heat transfer correlation factors; Based on the optimized contact area and the frequency requirements of the temperature-compensated crystal oscillator, the target size of the wafer is configured.

[0006] Optionally, factors related to heat transfer between the substrate and the wafer can be used to obtain information such as: Determine the structural features of the substrate and the bonding area with the wafer; Based on the aforementioned bonding area, key factors affecting heat transfer are identified; By integrating the aforementioned structural features and key factors, the aforementioned heat transfer correlation factors are formed.

[0007] Optionally, identifying key factors affecting heat transfer based on the bonding area includes: Analyze the influence trend of geometric parameters of the bonding area on heat transfer; Select geometric parameters whose influence on heat transfer meets the preset conditions; The selected geometric parameters were identified as the key factors.

[0008] Optionally, optimizing the contact area between the substrate and the wafer based on the aforementioned heat transfer correlation factors includes: The initial contact area between the base and the wafer is determined based on heat transfer-related factors; An optimized threshold for the contact area was set while ensuring the stability of the wafer adhesive. The initial contact area is adjusted according to the optimization threshold to obtain the optimized contact area.

[0009] Optionally, adjusting the initial contact area according to the optimization threshold to obtain the optimized contact area includes: Obtain the difference between the initial contact area and the optimization threshold; The adjustment direction and adjustment range of the contact area are determined based on the difference. The initial contact area is corrected according to the adjustment direction and adjustment range to obtain the optimized contact area.

[0010] Optionally, the target size of the wafer can be configured based on the optimized contact area and the frequency requirements of the temperature-compensated crystal oscillator, including: The constraints on wafer size are determined based on the optimized contact area; Candidate sizes are selected within the constraints based on the frequency requirements of the temperature-compensated crystal oscillator. The candidate dimensions are verified to determine the target size of the wafer.

[0011] Optionally, the constraints for determining the wafer size based on the optimized contact area include: Establish the relationship between contact area and wafer size; Based on the aforementioned correlation, the upper and lower limits of the dimensions of each dimension of the wafer are derived; The upper and lower limits are combined to form the constraint range of the wafer size.

[0012] Optionally, verifying the candidate dimensions to determine the target size of the wafer includes: Obtain the wafer temperature response characteristics corresponding to the candidate dimensions; Determine whether the temperature response characteristics meet the stability requirements of the temperature-compensated crystal oscillator. If they meet the stability requirements, then the corresponding candidate size is determined as the target size. If it does not meet the requirements, return to the step of screening candidate sizes within the constraints based on the frequency requirements of the temperature-compensated crystal oscillator and re-screen.

[0013] Optionally, before obtaining the heat transfer correlation factors between the substrate and the wafer, the following may also be included: The content of feature extraction for the packaging structure of the base includes the material properties of the base, the packaging method of the cover plate, and the groove structure of the base. The packaging structure features are used to assist in obtaining the heat transfer correlation factors between the base and the wafer.

[0014] Optionally, feature extraction of the base's encapsulation structure includes: Collect information on the material composition of the base and the packaging process of the cover plate; The groove structure characteristics are obtained by analyzing the groove structure parameters of the base; The packaging structure features are formed by integrating material composition information, packaging process information, and groove structure features.

[0015] Secondly, this application provides a temperature-compensated crystal oscillator wafer size configuration system based on temperature distribution, comprising: The acquisition module acquires the heat transfer correlation factors between the base and the chip. The area optimization module optimizes the contact area between the base and the wafer based on the heat transfer correlation factors. The configuration module configures the target size of the wafer based on the optimized contact area and the frequency requirements of the temperature-compensated crystal oscillator.

[0016] As can be seen from the above technical solution, the temperature-compensated crystal oscillator wafer size configuration method and system based on temperature distribution provided in this application can achieve high-sensitivity monitoring, low-power long-cycle operation, flexible deployment and remote hierarchical alarm in complex environments, so as to improve the level of gas safety management in residential areas. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a top view of the base structure of the temperature-compensated crystal oscillator wafer in the embodiments of this application; Figure 2 This is a front view of the base structure of the temperature-compensated crystal oscillator wafer in the embodiments of this application; Figure 3 This is a side view of the base structure of the temperature-compensated crystal oscillator wafer in the embodiments of this application; Figure 4 This is a schematic diagram of experimental data on the effect of wafer width on temperature difference distribution in an embodiment of this application; Figure 5 This is a schematic diagram of experimental data on the effect of wafer length on temperature difference distribution in an embodiment of this application; Figure 6 This is a flowchart illustrating a method for configuring the size of a temperature-compensated crystal oscillator wafer based on temperature distribution, as described in an embodiment of this application. Figure 7 This is a schematic diagram of a temperature-compensated crystal oscillator wafer size configuration system based on temperature distribution, as described in an embodiment of this application. Detailed Implementation

[0019] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not limiting, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application can also be implemented in other embodiments without such specific details. In other instances, detailed descriptions of well-known systems, apparatuses, circuits, and methods are omitted so as not to obscure the description of this application with unnecessary detail.

[0020] In a first aspect, embodiments of this application provide a method for configuring the size of a temperature-compensated crystal oscillator wafer based on temperature distribution, such as... Figure 6 As shown, it includes: 101: Obtain the factors related to heat transfer between the base and the chip; 102: Optimize the contact area between the base and the wafer based on the aforementioned heat transfer correlation factors; 103: Based on the optimized contact area and the frequency requirements of the temperature-compensated crystal oscillator, configure the target size of the wafer.

[0021] This application provides a method and system for configuring the size of a temperature-compensated crystal oscillator based on temperature distribution, which can achieve high-sensitivity monitoring, low-power long-cycle operation, flexible deployment, and remote hierarchical alarm in complex environments, thereby improving the level of gas safety management in residential areas.

[0022] Specifically, this application provides a method for configuring the size of a temperature-compensated crystal oscillator chip based on temperature distribution. Taking the ZC-145 base as an example, the base contains two rectangular grooves and one approximately "convex" groove. The base is made of 92% alumina ceramic material, and the upper packaging cover is made of 0.07mm KOVAR material. The base and cover are sealed by resistance soldering. Analysis shows that the chip temperature is mainly transferred through the contact between the base and the chip; therefore, the contact area between the base and the chip is configured accordingly. The relationship between chip temperature and base temperature is as follows:

[0023] In the formula: Temperature of the base (in °C) Current temperature of the wafer (in °C) Heating rate of the base (unit: °C / s) Specific heat capacity of the wafer (unit: J / ℃) Heat transfer rate between the substrate and the wafer (unit: W / (m²K)) S: Contact area between the base and the wafer (unit: m2) The smaller the contact area between the substrate and the wafer, the less heat is transferred from the substrate to the wafer. Therefore, reducing the wafer temperature can be achieved in two ways: first, by changing the structure of the contact area between the substrate and the wafer to reduce the contact area; and second, by reducing the size of the wafer.

[0024] The following section will provide a detailed explanation of this application in conjunction with its specific structure.

[0025] The base as described Figure 1 As shown, the cover plate is as follows Figure 2 As shown, the wafer is as follows Figure 3 As shown, the wafer is attached to the base (1) and (2) by dispensing adhesive. The cover plate and the base are sealed by soldering. As shown in the figure, the finite element simulation fully considers the gradual heating process of the base in a high temperature environment of 125℃. The temperature rise of the wafer is mainly affected by the heat transfer of the base temperature. During the heating process, the temperature difference of the wafer first increases and then decreases. Changing the wafer width dimension will increase the temperature difference of the wafer to a certain extent. Changing the wafer length dimension can slow down the temperature rise of the wafer to a large extent. Figure 4 and 5 As shown.

[0026] This application provides a method for configuring the size of a temperature-compensated crystal oscillator wafer based on temperature distribution. The traditional method determines the wafer size based on experience, while this method determines the wafer size by determining the contact area between the base and the wafer, and by combining the frequency and aspect ratio requirements of the product.

[0027] The present application will now be described in detail. In optional embodiments, the factors related to heat transfer between the base and the wafer include: Determine the structural features of the substrate and the bonding area with the wafer; Based on the aforementioned bonding area, key factors affecting heat transfer are identified; By integrating the aforementioned structural features and key factors, the aforementioned heat transfer correlation factors are formed.

[0028] Specifically, first, determine the structural features of the substrate and the contact area between the wafer and the substrate: by observing the internal structure of the substrate, locate the actual contact area between the wafer and the substrate - for example, if the substrate contains a "convex" groove, then the contact area between the wafer and the raised part of the groove is the contact area; at the same time, record the structural feature parameters of the substrate, such as the inner wall slope of the groove, the height of the raised part, etc., these parameters directly affect the contact shape between the wafer and the substrate.

[0029] Secondly, based on the bonding area, key factors affecting heat transfer are identified: the physical properties of the bonding area are analyzed to determine their effect on heat transfer—for example, the material uniformity of the bonding area, the surface roughness of the bonding area, and the stress state of the bonding area. These characteristics that have a significant impact on heat transfer efficiency are identified as key factors to be screened.

[0030] Finally, the structural features and key factors are integrated to form the heat transfer correlation factors: using a weighted synthesis method, the structural feature parameters of the base and the key factor parameters, such as the thermal resistance coefficient corresponding to surface roughness, are assigned different weights, and the comprehensive correlation parameters are calculated by formula. This parameter is the core quantitative form of the heat transfer correlation factors and can be directly used for subsequent optimization calculation of the contact area.

[0031] An example, the integrated formula for heat transfer-related factors is as follows:

[0032] in: : A comprehensive quantitative value of factors related to heat transfer; α: Weighting coefficient of the characteristic parameters of the base structure (set according to the degree of influence of the structure on the contact morphology, with a value range of 0~1); : Normalized parameters of the base structure characteristics; β: Weighting coefficient of key factor parameters; Quantitative parameters of key factors.

[0033] In an optional embodiment, identifying key factors affecting heat transfer based on the bonding area includes: Analyze the influence trend of geometric parameters of the bonding area on heat transfer; Select geometric parameters whose influence on heat transfer meets the preset conditions; The selected geometric parameters were identified as the key factors.

[0034] Specifically, firstly, the influence trend of the geometric parameters of the bonding area on heat transfer is analyzed: core geometric parameters of the bonding area are selected, such as the length L, width W, and curvature R of the contact edge. The variation law of heat transfer efficiency under different parameter values ​​is analyzed through heat transfer simulation. For example, when the length L of the bonding area increases, the contact area increases accordingly, and the heat transfer amount shows a linear upward trend; when the curvature R of the contact edge increases, the stress concentration of the bonding area decreases, the contact tightness is improved, and the heat transfer amount shows a slow upward trend. The corresponding changes of these parameters and the heat transfer amount are recorded.

[0035] Secondly, select geometric parameters whose influence on heat transfer meets the preset conditions: calculate the influence of each geometric parameter on the amount of heat transfer, that is, the proportion of the change in heat transfer caused by the change of this parameter to the total change in heat transfer caused by the common change of all parameters; set preset conditions and select geometric parameters that meet the conditions.

[0036] Finally, the selected geometric parameters are identified as the key factors: the selected geometric parameters are prioritized to form a list of key factors, and each parameter in the list is accompanied by its corresponding influence trend characteristics, which are used for the subsequent integration of heat transfer related factors.

[0037] The formula for calculating the percentage of influence of geometric parameters on heat transfer is as follows:

[0038] in: : The percentage of the influence of the i-th geometric parameter on heat transfer (unit: %); : The change in heat transfer when the i-th geometric parameter changes individually (unit: W); n: The total number of geometric parameters involved in the analysis; : The change in heat transfer when the j-th geometric parameter changes alone (unit: W).

[0039] In this embodiment, the first step analyzes the influence trend and establishes a direct correlation between geometric parameters and heat transfer; the second step eliminates parameters with weak influence by calculating the influence ratio and filtering under preset conditions, thus avoiding redundant parameters that would increase the complexity of subsequent calculations; the third step identifies and sorts the key factors, enabling the subsequent integration of related factors to focus on the core parameters and significantly improving the accuracy of the related factors.

[0040] In an optional embodiment, optimizing the contact area between the substrate and the wafer based on the heat transfer correlation factors includes: The initial contact area between the base and the wafer is determined based on heat transfer-related factors; An optimized threshold for the contact area was set while ensuring the stability of the wafer adhesive. The initial contact area is adjusted according to the optimization threshold to obtain the optimized contact area.

[0041] Specifically, firstly, the initial contact area between the substrate and the wafer is determined based on heat transfer-related factors: according to the comprehensive quantitative value of heat transfer-related factors. This involves considering the thermal conductivity of the base and the chip materials. For example, the thermal conductivity of the base... Thermal conductivity of the wafer Calculate the initial contact area using the formula - if If the heat transfer rate is large, the initial contact area needs to be set to a smaller value to initially control the amount of heat transfer; if If the initial contact area is smaller, it can be appropriately increased to balance heat transfer control and chip support requirements.

[0042] Secondly, while ensuring the stability of the wafer adhesive bonding, an optimization threshold for the contact area is set: The requirements for adhesive stability based on wafer weight and bonding method are analyzed—for example, the heavier the wafer, the stronger the adhesion after curing, and the larger the corresponding minimum contact area. Experiments are conducted to verify the risk of wafer detachment under different contact areas, determining the minimum contact area that ensures the wafer will not detach under conditions such as vibration and temperature changes. This area is the optimization threshold for the contact area. .

[0043] Finally, the initial contact area is adjusted according to the optimization threshold to obtain the optimized contact area: compared with the initial contact area. With optimized threshold Then Towards Direction adjustment, such as reducing to near The value is chosen to minimize heat transfer; if Then it needs to be increased to To ensure adhesive stability, the adjusted area is the optimized contact area. .

[0044] For example, the formula for calculating the initial contact area is as follows:

[0045] in: Initial contact area between the base and the wafer (unit: m²); Area correction factor (set based on the overall size of the temperature-compensated crystal oscillator, unit: m) 2 ℃ W -1 ); Thermal conductivity of the base (unit: W / (m)) ℃)); Thermal conductivity of the wafer (unit: W / (m²)) ℃)); : A comprehensive quantitative value (dimensionless) of factors related to heat transfer.

[0046] In this embodiment, the first step is to determine the initial area based on related factors; the second step is to set an optimization threshold, which clarifies the lower limit of the contact area and avoids the wafer from falling off due to excessive reduction of the area; the third step is to adjust the area by comparing the initial value with the threshold, and finally obtain an optimized area that satisfies the adhesive stability and minimizes the amount of heat transfer.

[0047] In an optional embodiment, adjusting the initial contact area according to the optimization threshold to obtain the optimized contact area includes: Obtain the difference between the initial contact area and the optimization threshold; The adjustment direction and adjustment range of the contact area are determined based on the difference. The initial contact area is corrected according to the adjustment direction and adjustment range to obtain the optimized contact area.

[0048] Specifically, first, obtain the difference between the initial contact area and the optimization threshold: calculate the initial contact area. With optimized threshold absolute difference ,Right now At the same time, determine the positive or negative direction of the difference - if If the difference is positive, it means the initial area needs to be reduced; if If the difference is negative, it means the initial area needs to be increased.

[0049] Secondly, the adjustment direction and adjustment range of the contact area are determined based on the difference: according to the difference The size setting adjusts the coefficient k, such as... The larger the value of k, the larger the value of k, in order to speed up the adjustment efficiency; The smaller the value of k, the smaller the value of k, to avoid over-adjustment; the adjustment direction is determined by the sign of the difference – a positive difference corresponds to the "decreasing direction," and a negative difference corresponds to the "increasing direction"; the adjustment range... It is calculated by multiplying the difference by the coefficient, i.e. .

[0050] Finally, the initial contact area is corrected according to the adjustment direction and adjustment range to obtain the optimized contact area: if the adjustment direction is "reducing direction", then the optimized area is... If the adjustment direction is set to "increase direction", then The correction needs to be verified again. and Relationship - If and If the deviation is less than the preset error, then it is determined. To optimize the area, if the deviation is greater than the preset error, repeat the above steps until the deviation meets the requirements.

[0051] For example, the formulas for calculating the adjustment range and the optimized area are as follows: Adjustment range:

[0052] Optimize area (reducing direction):

[0053] Optimize area (increasing direction):

[0054] in: : Adjustment range of contact area (unit: m²); k: Adjustment amplitude coefficient (set according to the difference, value range 0) <k<1); : The absolute difference between the initial contact area and the optimization threshold (unit: m²); Optimized contact area (unit: m²); Initial contact area (unit: m²).

[0055] The first step of this embodiment, the difference calculation, clarifies the basis for adjustment; the second step sets the adjustment coefficient and direction based on the difference to ensure that the adjustment range matches the difference; the third step, the correction and verification step, ensures that the deviation between the optimized contact area and the threshold is minimal through error control, which not only strictly meets the requirements of adhesive stability, but also maximizes the control of heat transfer, providing high-precision area parameters for subsequent wafer size configuration.

[0056] In an optional embodiment, configuring the target size of the wafer based on the optimized contact area and the frequency requirements of the temperature-compensated crystal oscillator includes: The constraints on wafer size are determined based on the optimized contact area; Candidate sizes are selected within the constraints based on the frequency requirements of the temperature-compensated crystal oscillator. The candidate dimensions are verified to determine the target size of the wafer.

[0057] Specifically, firstly, the constraint range of the wafer size is determined based on the optimized contact area: the optimized contact area is analyzed. Relationship with wafer size - wafer length ,width Must meet Ensure that the contact area between the wafer and the substrate is not less than the optimized value, while also taking into account the wafer thickness. The impact on contact stability, such as insufficient thickness leading to wafer bending and affecting the contact area; considering these requirements, the respective constraint ranges for wafer length, width, and thickness are determined, i.e. .

[0058] Secondly, considering the frequency requirements of the temperature-compensated crystal oscillator within the constraints, candidate sizes are selected: the center frequency that the temperature-compensated crystal oscillator must meet is determined. In accordance with frequency stability requirements, and based on the frequency formula for quartz crystals, within the size constraints, samples are selected that ensure the crystal's vibration frequency falls within a certain range. Nearby size combinations, such as These combinations of dimensions are the candidate dimensions.

[0059] Finally, the candidate sizes are verified to determine the target size of the wafer: temperature response simulation is performed on the wafer corresponding to each candidate size - at different ambient temperatures, the vibration frequency change of the wafer is detected to see if it meets the stability requirements; if the frequency change of a certain candidate size is always within the allowable range and its size is still within the constraint range, then the size is determined as the target size of the wafer; if all candidate sizes do not meet the requirements, the process returns to the "determine size constraint range" step, the constraint range is adjusted appropriately, and the candidate sizes are re-screened and verified.

[0060] For example, the relationship between the frequency and size of a quartz crystal is as follows:

[0061] in: : The vibration frequency of the crystal (unit: Hz); : Chip frequency coefficient (related to chip material and cutting method, unit: Hz) m 3 ); : Length of the wafer (unit: m); : Width of the wafer (unit: m); : Thickness of the wafer (unit: m).

[0062] In this embodiment, the first step is to determine the constraint range to ensure that the size meets the basic requirements of contact area and structural stability; the second step is to screen candidate sizes, associate the size with the frequency, and initially lock in the size combination that meets the frequency requirements; the third step is to verify the size by detecting the temperature response, eliminating sizes that "meet the frequency requirements but have poor temperature stability". The final target size can meet the heat transfer control requirements brought about by optimizing the contact area, and also ensure that the frequency performance of the temperature compensated crystal oscillator meets the requirements.

[0063] In an optional embodiment, determining the constraint range for the wafer size based on the optimized contact area includes: Establish the relationship between contact area and wafer size; Based on the aforementioned correlation, the upper and lower limits of the dimensions of each dimension of the wafer are derived; The upper and lower limits are combined to form the constraint range of the wafer size.

[0064] Specifically, firstly, the relationship between contact area and wafer size is established: data on different wafer sizes are collected experimentally. Corresponding data to the actual contact area - for example, when the wafer length is Width is At that time, the actual contact area was By fitting the data, a linear relationship formula between the contact area S and the wafer length and width was obtained. This formula represents the relationship between the contact area and the wafer size.

[0065] Secondly, based on the aforementioned correlation, the upper and lower limits of the dimensions of each dimension of the wafer are derived: for the wafer length... According to the correlation formula, when the width Take the maximum value When, it can be deduced that minimum value (satisfy ); when width Take the minimum value When, it can be deduced that maximum value Similarly, the width is derived. Upper and lower limits; for thickness The minimum thickness is set according to the bending strength requirements of the wafer. The upper limit of thickness is set according to the depth of the base groove. .

[0066] Finally, the upper and lower limits are integrated to form the constraint range of the wafer size: the derived upper and lower limits of length, width, and thickness are summarized to form a complete size constraint range, for example... This range clarifies the reasonable range of values ​​for the wafer size, providing a clear boundary for the subsequent selection of candidate sizes.

[0067] For example, the formula relating the contact area to the wafer length and width is as follows:

[0068] in: S: Actual contact area between the wafer and the base (unit: m²); : Influence coefficient of length on contact area (unit: m, obtained from experimental fitting); : Influence coefficient of width on contact area (unit: m, obtained from experimental fitting); : Contact area correction constant (unit: m², used to correct formula fitting error); : Length of the wafer (unit: m); : Width of the wafer (unit: m).

[0069] In this embodiment, the first step is to establish the correlation, transforming the abstract contact area requirement into a formula directly related to the wafer size; the second step is to derive the upper and lower limits, taking into account actual requirements such as base space and vibration stability, to ensure that the dimensions of each dimension have reasonable boundaries; the third step is to integrate the ranges to form clear size intervals, so that there is no need for repeated trial and error when screening candidate sizes, which significantly improves the screening efficiency, while ensuring that the screened sizes all meet the contact area requirements.

[0070] In an optional embodiment, verifying the candidate dimensions to determine the target size of the wafer includes: Obtain the wafer temperature response characteristics corresponding to the candidate dimensions; Determine whether the temperature response characteristics meet the stability requirements of the temperature-compensated crystal oscillator. If they meet the stability requirements, then the corresponding candidate size is determined as the target size. If it does not meet the requirements, return to the step of screening candidate sizes within the constraints based on the frequency requirements of the temperature-compensated crystal oscillator and re-screen.

[0071] Specifically, firstly, obtain the wafer temperature response characteristics corresponding to the candidate sizes: for each candidate size (e.g., Construct a temperature response model for the wafer—simulate the heat transfer process from the base to the wafer under different ambient temperatures, and record the wafer vibration frequency corresponding to each temperature point. ; Calculate the rate of change of frequency , The change curve represents the temperature response characteristics of the candidate size.

[0072] Secondly, determine whether the temperature response characteristics meet the stability requirements of a temperature-compensated crystal oscillator: set a frequency stability threshold. Check candidate sizes Is it always less than —If at all simulated temperature points, If the candidate size meets the stability requirement, then the candidate size meets the stability requirement; if there is a certain temperature point If the candidate size does not meet the stability requirements, then the candidate size does not meet the stability requirements.

[0073] Finally, if the stability requirement is met, the corresponding candidate size is determined as the target size; if not, the process returns to the step of selecting candidate sizes within the constraint range based on the frequency requirement of the temperature-compensated crystal oscillator and re-selects: for candidate sizes that meet the requirements, their assembly compatibility with the base is further verified; if the compatibility meets the standard, they are determined as the target size; for candidate sizes that do not meet the requirements, the reasons for their frequency deviation are analyzed, and the selection conditions are adjusted appropriately when returning to the selection step, and the selection and verification are repeated until a target size that meets the requirements is found.

[0074] For example, the formula for calculating the rate of change of wafer frequency is as follows:

[0075] in: Frequency change rate of the wafer (unit: ppm, 1ppm=10) -6 ); f(t): Real-time vibration frequency of the wafer at a certain ambient temperature (unit: Hz); : Center frequency of temperature compensated crystal oscillator (unit: Hz).

[0076] In this embodiment, the first step is to obtain the temperature response characteristics and quantify the frequency performance of candidate sizes at different temperatures; the second step is to determine the stability requirements to ensure that the target size can meet the frequency stability requirements in actual work; the third step is a feedback screening mechanism to achieve iterative optimization by adjusting the screening conditions. The final target size not only meets the basic requirements of contact area and frequency, but also maintains frequency stability over a wide temperature range, significantly improving the environmental adaptability of the temperature-compensated crystal oscillator.

[0077] In an optional embodiment, before obtaining the heat transfer correlation factors between the base and the wafer, the method further includes: The content of feature extraction for the packaging structure of the base includes the material properties of the base, the packaging method of the cover plate, and the groove structure of the base. The packaging structure features are used to assist in obtaining the heat transfer correlation factors between the base and the wafer.

[0078] Specifically, before obtaining the factors related to heat transfer, the encapsulation structure of the base is first feature extracted: First, the material properties of the base are identified - the material composition and thermal conductivity of the base body and contact area are determined through material testing. Coefficient of thermal expansion Secondly, record the sealing method of the cover plate - determine the connection type between the cover plate and the base, and the sealing performance. Thermal conductivity of the cover material Finally, the groove structure of the base is analyzed – the shape parameters of the groove, the surface treatment method of the groove, and the volume of the groove are measured. .

[0079] By summarizing the above material properties, packaging method parameters, and groove structure parameters, a complete packaging structure feature is formed. When subsequently obtaining heat transfer-related factors, key parameters from the packaging structure feature, such as... The height of the groove protrusion is used as an auxiliary parameter and incorporated into the calculation process of heat transfer-related factors—for example, if the sealing performance... If the thermal conductivity of the base is high, external thermal interference is small, and the weight of external temperature in heat transfer-related factors can be appropriately reduced; if the thermal conductivity of the base is high... If the heat transfer correlation factor is high, the thermal conductivity of the base itself should be given special consideration to ensure a more comprehensive calculation of the correlation factor.

[0080] For example, the comprehensive evaluation formula for packaging structure features is as follows:

[0081] in: : Comprehensive evaluation parameters of packaging structure characteristics (dimensionless); Weighting coefficient for the thermal conductivity of the base material; Thermal conductivity of the base packaging structure (unit: W / (m)) ℃)); : Weighting factor for sealing performance; : Quantitative value of the hermeticity of the packaging; Weighting coefficients for the parameters of the groove structure; : Normalized parameters of the base groove structure.

[0082] The inventors of this application have discovered that the material properties in the packaging structure directly affect the thermal conductivity of the substrate, the packaging method affects the stability of the internal thermal environment, and the groove structure affects the contact pattern between the chip and the substrate. These features are all closely related to heat transfer. By incorporating them into auxiliary calculations, the heat transfer-related factors can more comprehensively reflect the actual heat transfer conditions, avoiding deviations in related factors due to ignoring the influence of the packaging structure.

[0083] Secondly, embodiments of this application provide a temperature-compensated crystal oscillator wafer size configuration system based on temperature distribution, such as... Figure 7 As shown, it includes: Module 1 acquires the factors related to heat transfer between the base and the chip; Area optimization module 2 optimizes the contact area between the base and the wafer based on the heat transfer correlation factors; Configuration module 3 configures the target size of the wafer based on the optimized contact area and the frequency requirements of the temperature-compensated crystal oscillator.

[0084] This application provides a temperature-compensated crystal oscillator wafer size configuration system based on temperature distribution, which can achieve high-sensitivity monitoring, low-power long-cycle operation, flexible deployment and remote hierarchical alarm in complex environments, so as to improve the level of gas safety management in residential areas.

[0085] This application uses specific embodiments to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the methods and ideas of this application. At the same time, for those skilled in the art, there may be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for configuring the size of a temperature-compensated crystal oscillator wafer based on temperature distribution, characterized in that, include: To determine the factors related to heat transfer between the base and the chip; The contact area between the base and the wafer is optimized based on the aforementioned heat transfer correlation factors; Based on the optimized contact area and the frequency requirements of the temperature-compensated crystal oscillator, the target size of the wafer is configured.

2. The method according to claim 1, characterized in that, Factors related to heat transfer between the base and the chip include: Determine the structural features of the substrate and the bonding area with the wafer; Based on the aforementioned bonding area, key factors affecting heat transfer are identified; By integrating the aforementioned structural features and key factors, the aforementioned heat transfer correlation factors are formed.

3. The method according to claim 2, characterized in that, Key factors affecting heat transfer, identified based on the aforementioned bonding area, include: Analyze the influence trend of geometric parameters of the bonding area on heat transfer; Select geometric parameters whose influence on heat transfer meets the preset conditions; The selected geometric parameters were identified as the key factors.

4. The method according to claim 1, characterized in that, Optimizing the contact area between the base and the wafer based on the aforementioned heat transfer correlation factors includes: The initial contact area between the base and the wafer is determined based on heat transfer-related factors; An optimized threshold for the contact area was set while ensuring the stability of the wafer adhesive. The initial contact area is adjusted according to the optimization threshold to obtain the optimized contact area.

5. The method according to claim 4, characterized in that, The optimized contact area is obtained by adjusting the initial contact area according to the optimization threshold, including: Obtain the difference between the initial contact area and the optimization threshold; The adjustment direction and adjustment range of the contact area are determined based on the difference. The initial contact area is corrected according to the adjustment direction and adjustment range to obtain the optimized contact area.

6. The method according to claim 1, characterized in that, Based on the optimized contact area and the frequency requirements of the temperature-compensated crystal oscillator, the target dimensions of the wafer are configured as follows: The constraints on wafer size are determined based on the optimized contact area; Candidate sizes are selected within the constraints based on the frequency requirements of the temperature-compensated crystal oscillator. The candidate dimensions are verified to determine the target size of the wafer.

7. The method according to claim 6, characterized in that, The constraints for determining wafer size based on the optimized contact area include: Establish the relationship between contact area and wafer size; Based on the aforementioned correlation, the upper and lower limits of the dimensions of each dimension of the wafer are derived; The upper and lower limits are combined to form the constraint range of the wafer size.

8. The method according to claim 6, characterized in that, Verifying the candidate dimensions to determine the target size of the wafer includes: Obtain the wafer temperature response characteristics corresponding to the candidate dimensions; Determine whether the temperature response characteristics meet the stability requirements of the temperature-compensated crystal oscillator. If they meet the stability requirements, then the corresponding candidate size is determined as the target size. If it does not meet the requirements, return to the step of screening candidate sizes within the constraints based on the frequency requirements of the temperature-compensated crystal oscillator and re-screen.

9. The method according to claim 1, characterized in that, Before obtaining the factors related to heat transfer between the base and the chip, the following are also included: The content of feature extraction for the packaging structure of the base includes the material properties of the base, the packaging method of the cover plate, and the groove structure of the base. The packaging structure features are used to assist in obtaining the heat transfer correlation factors between the base and the wafer.

10. A temperature-compensated crystal oscillator wafer size configuration system based on temperature distribution, characterized in that, include: The acquisition module acquires the heat transfer correlation factors between the base and the chip. The area optimization module optimizes the contact area between the base and the wafer based on the heat transfer correlation factors. The configuration module configures the target size of the wafer based on the optimized contact area and the frequency requirements of the temperature-compensated crystal oscillator.

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