Joining member and joined body

Abstract

A joining member having a base material containing an inorganic material and a joined surface having a function of joining with another member, (i) the joined surface being a first surface of the base material, or (ii) the joined surface being a surface of an inorganic dielectric film provided on the first surface of the base material, in the N1s spectrum of the surface to be bonded, when I1 is the maximum intensity in the range of 402.5 eV to 403.5 eV and I2 is the maximum intensity in the range of 398.2 eV to 399.2 eV, I2 / I1 is greater than 1.5, in the case (i), the nitrogen content of the surface to be bonded is higher than the main body of the base material, and in the case (ii), the inorganic dielectric film does not include a nitride film, and in the case (ii), the nitrogen content of the surface to be bonded is lower than the nitrogen content of the main body of the base material. And the nitrogen content of the jointed surface is higher than that of the main body part of the outermost layer of the inorganic dielectric film.

Description

Technical Field

[0001] This invention relates to joining components and joining bodies. Background Technology

[0002] There is a high demand for techniques that join two components, and various methods have been used to date.

[0003] For example, hydrophilic bonding is a known technique for joining glass components together using a non-vacuum system. In this method, hydroxyl or silanol groups are first formed on the surfaces of the glass components to be joined, and the two glass components are weakly bonded together through hydrogen bonds between these chemical groups. Then, when the assembly is heated to a temperature above 600°C, the OH groups decompose. At this point, the two glass components are firmly bonded together by the formation of Si-O-Si bonds through the remaining oxygen atoms.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: International Publication No. WO2020 / 175396 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] In the hydrophilic bonding technology described above, heat treatment is required at temperatures above 600°C. Therefore, in hydrophilic bonding technology, when the bonding components include precision devices such as light-emitting elements and electronic components, there is a problem that such devices may be damaged or deteriorated due to high-temperature heat treatment.

[0009] Furthermore, when a machined component with features such as through holes, grooves, and non-through recesses is used as a joining component, the dimensions of the features may change when the joining component is subjected to high-temperature heat treatment.

[0010] It is evident that there is a difficulty in applying hydrophilic bonding technology to bonding components and micro-fabricated components used in precision devices.

[0011] It should be noted that, recently, as another bonding technique, sequential plasma activation technology (Patent Document 1) has been reported. In this method, the surfaces of two quartz glasses to be bonded are each modified by sequential plasma treatment. The modified surfaces have bonding functions, so by bringing the surfaces of the two quartz glasses into contact, the two quartz glasses can be bonded to each other.

[0012] However, in sequential plasma activation technology, the only surfaces that can be bonded are SiO2 surfaces. Therefore, when bonding components other than quartz glass, a SiO2 film needs to be formed on the surface. For bonding components with exposed inorganic dielectric films, bonding becomes difficult.

[0013] The present invention was made in view of the following background, and the object of the present invention is to provide a joining member and a joining body including such a joining member, which can significantly alleviate the constraint on the joined surfaces and can be manufactured without using heat treatment at high temperatures above 600°C.

[0014] means for solving problems

[0015] In this invention, a joining member is provided, wherein the joining member has: a substrate comprising an inorganic material, and a joined surface having a joining function with other components. (i) The surface to be joined is the first surface of the substrate, or (ii) The surface to be bonded is the surface of the inorganic dielectric film disposed on the first surface of the substrate. In the N1s energy spectrum of the bonded surface obtained by X-ray photoelectron spectroscopy analysis, when the maximum intensity in the range of 402.5 eV to 403.5 eV is defined as I1 and the maximum intensity in the range of 398.2 eV to 399.2 eV is defined as I2, the ratio I2 / I1 is greater than 1.5. In case (i), the nitrogen content of the joined surface is higher than that of the main body of the substrate. In the case of (ii), the inorganic dielectric film does not contain a nitrided film, and the nitrogen content of the bonded surface is higher than that of the outermost body portion of the inorganic dielectric film.

[0016] Furthermore, this invention provides a bonding body formed by directly bonding a first substrate and a second substrate, wherein... The first substrate comprises glass containing less than 90 mol% SiO2. The second substrate comprises inorganic materials. The joint has a bonding surface between the first substrate and the second substrate, and the nitrogen content in the bonding surface is higher than that in the main body of the first substrate and / or the second substrate. The joint has 1J / m 2 The above bonding energy, or having a bonding energy of 0.7 kgf / mm 2 The above bonding strength.

[0017] Furthermore, this invention provides a bonding body having a first substrate, a second substrate, and an inorganic dielectric film located between the first substrate and the second substrate, wherein... The first substrate and the second substrate contain inorganic materials. The dielectric film does not contain a nitride film. (i) The bonding body has a bonding surface at the interface between the first substrate and the inorganic dielectric film at the layer closest to the first substrate, or (ii) The bonding body has a bonding surface at the interface between the second substrate and the inorganic dielectric film at the layer closest to the second substrate, or (iii) The joint has a bonding surface in the inorganic dielectric film. In case (i), the nitrogen content in the bonding surface is higher than that in the main body of the first substrate and the main body of the layer of the inorganic dielectric film. In the case of (ii), the nitrogen content in the bonding surface is higher than that in the main body of the second substrate and the main body of the layer of the inorganic dielectric film. In the case of (iii), the bonding surface is not the interface between the SiO2 layers, but rather: (a) The bonding surface is the interface between adjacent layers in the inorganic dielectric film, and the nitrogen content in the bonding surface is higher than that in the main body of the adjacent layers of the inorganic dielectric film, or (b) The bonding surface is located inside the first layer constituting the inorganic dielectric film, and the nitrogen content in the bonding surface is higher than that in the main body of the first layer. The joint has a strength of 0.5 J / m 2 The above bonding energy, or having a bonding strength of 0.4 kg / mm 2 The above bonding strength.

[0018] Furthermore, this invention provides a method for manufacturing a joint, which is a method for manufacturing a joint obtained by joining a first component and a second component, wherein the method for manufacturing the joint comprises the following steps: The step of plasmaizing the reactant gas; The step of irradiating the mating surface of at least one of the first and second components with the plasma-enhanced reactive gas; and The step of joining the first component and the second component via the joined surfaces. The reactant gas contains NH3. The surfaces to be joined contain inorganic materials.

[0019] Invention Effects

[0020] In this invention, it is possible to provide a joining member and a joining body comprising such a joining member, the joining member being able to significantly alleviate the constraints on the joined surfaces, and being able to be manufactured without using heat treatment at high temperatures above 600°C. Attached Figure Description

[0021] Figure 1 This is a diagram illustrating an example of the N1s energy spectrum of the joined surface of the joining member according to the first embodiment of the present invention, obtained by X-ray photoelectron spectroscopy (XPS) analysis.

[0022] Figure 2 This is a schematic diagram illustrating an example of a cross-section of a joining member according to a first aspect of the present invention.

[0023] Figure 3 This is a schematic diagram illustrating an example of a cross-section of a substrate that may be included in a joining member according to a first aspect of the present invention.

[0024] Figure 4 This is a schematic diagram illustrating an example of a cross-section of another substrate that may be included in the joining member of the first aspect of the present invention.

[0025] Figure 5 This is a schematic diagram illustrating an example of a cross-section of another joining member of the first aspect of the invention.

[0026] Figure 6 This is a schematic diagram illustrating an example of a cross-section of the joint of the second aspect of the present invention.

[0027] Figure 7 This is a schematic diagram illustrating an example of a cross-section of a device having a connector of the second aspect of the present invention.

[0028] Figure 8 This is a schematic diagram illustrating an example of a cross-section of a device having another assembly of the second aspect of the present invention.

[0029] Figure 9 This is a flowchart illustrating an example of a method for manufacturing a joint according to a second aspect of the present invention.

[0030] Figure 10 This is a schematic diagram illustrating an example of a cross-section of the third-party type of joint of the present invention.

[0031] Figure 11 This is a graph showing a comparison of the measured N1s energy spectrum results of a bonding member according to one embodiment of the present invention and a conventional bonding member.

[0032] Figure 12This is a graph showing a comparison of the measured N1s energy spectrum results of a bonding member according to one embodiment of the present invention and a conventional bonding member.

[0033] Figure 13 This is a graph showing a comparison of the measured N1s energy spectrum results of a bonding member according to one embodiment of the present invention and a conventional bonding member.

[0034] Figure 14 This is a diagram illustrating an example of the depth-direction distribution of nitrogen content in the first surface of a joining member according to an embodiment of the present invention.

[0035] Figure 15 It is a schematic diagram showing a general outline of the apparatus used in the shear test.

[0036] Figure 16 This is a schematic diagram illustrating the structure of the measuring device used in the joint strength evaluation test. Detailed Implementation

[0037] Hereinafter, one embodiment of the present invention will be described.

[0038] In one embodiment of the present invention, a joining member is provided, the joining member having: a substrate comprising an inorganic material, and a joined surface having a joining function with other components. (i) The surface to be joined is the first surface of the substrate, or (ii) The surface to be bonded is the surface of the inorganic dielectric film disposed on the first surface of the substrate. In the N1s energy spectrum of the bonded surface obtained by X-ray photoelectron spectroscopy analysis, when the maximum intensity in the range of 402.5 eV to 403.5 eV is defined as I1 and the maximum intensity in the range of 398.2 eV to 399.2 eV is defined as I2, the ratio I2 / I1 is greater than 1.5. In case (i), the nitrogen content of the joined surface is higher than that of the main body of the substrate. In the case of (ii), the inorganic dielectric film does not contain a nitrided film, and the nitrogen content of the bonded surface is higher than that of the outermost body portion of the inorganic dielectric film.

[0039] As mentioned above, conventional hydrophilic bonding technology requires heat treatment at temperatures above 600°C. Therefore, conventional hydrophilic bonding technology has the problem of being difficult to apply to bonding components for micro-fabricated parts and precision devices.

[0040] In addition, in sequential plasma activation technology, there is a limitation on the material of the bonding surface. For bonding surfaces containing materials other than SiO2, there is a problem of difficulty in bonding.

[0041] To address these problems, the inventors of this application have continuously pursued in-depth research and development. Furthermore, the inventors of this application have discovered that by subjecting the jointed surfaces of the jointing components to atmospheric pressure plasma treatment using a gas containing NH3 (hereinafter referred to as "NH3 plasma treatment"), the aforementioned problems can be avoided or mitigated.

[0042] It should be noted that, as a reason for obtaining good bonding function on the bonding surface of the bonding component through NH3 plasma treatment, the following will be examined.

[0043] It is generally believed that OH groups (hydroxyl groups) are adsorbed on the bonding surface of the bonding component. On the other hand, when the bonding surface is treated with NH3 plasma, some of the OH groups on the surface are replaced with NH2 groups (amino groups) by utilizing the NH free radicals generated by NH3 gas through NH3 plasma treatment and the surface activation effect caused by plasma discharge on the bonding surface.

[0044] The NH2 group can undergo a condensation reaction with the OH group. Therefore, it is believed that when a bonding surface containing NH2 groups that has been treated with NH3 plasma is joined with another bonding surface containing OH groups, a condensation reaction occurs, and the bridging oxygen obtained at this time can be used to obtain a good bonding force between the two bonding components.

[0045] However, the above examination is based on data obtained by the inventors at the present moment. In this invention, the joining function of the joined surfaces does not necessarily have to be manifested through this mechanism.

[0046] In one embodiment of the invention, the surfaces to be joined by the joining members are treated with NH3 plasma, resulting in excellent joining performance. Furthermore, by joining another joining member with the surfaces to be joined of such a joining member, a joined body consisting of two members can be obtained.

[0047] In one embodiment of the present invention, components can be joined together without heat treatment at temperatures above 600°C. Therefore, in one embodiment of the present invention, even for joining components used in micro-machining and precision devices, joining can be performed without causing device degradation and / or a reduction in dimensional accuracy.

[0048] Furthermore, in one embodiment of the present invention, there is virtually no restriction on the surface to be treated by NH3 plasma, so it is possible to form a joint using a jointing member having various surface materials.

[0049] Figure 1 The diagram shows an example of the N1s energy spectrum of the joined surface of a joining member according to an embodiment of the present invention, obtained by X-ray photoelectron spectroscopy (XPS) analysis.

[0050] exist Figure 1 In the diagram, the horizontal axis represents binding energy, and the vertical axis represents strength. For example... Figure 1 As shown, a large peak in the range of 398.7 eV was observed in the N1s energy spectrum of the bonded surface.

[0051] In the N1s energy spectrum, peaks attributable to NO2 bonding occur in the range of 402.5 eV to 403.5 eV, and peaks attributable to NH2 bonding occur in the range of 398.2 eV to 399.2 eV. Therefore, in Figure 1 In the example shown, a peak attributable to NH2 bonding appears prominently.

[0052] In one embodiment of the present invention, as described above, bonding functionality is exhibited on the bonding surface of the bonding member by NH3 plasma treatment. Therefore, in one embodiment of the present invention, there is a tendency for the peak attributable to NH2 bonding to become higher in the XPS analysis of the bonding surface of the bonding member.

[0053] In particular, in a bonding member according to one embodiment of the present invention, there is a feature that, in the N1s energy spectrum obtained by XPS analysis, when the maximum intensity in the range of 402.5 eV to 403.5 eV is set as I1 and the maximum intensity in the range of 398.2 eV to 399.2 eV is set as I2, the ratio of I2 / I1 is greater than 1.5.

[0054] The ratio of I2 / I1 can be, for example, 1.6 or 1.7 or higher.

[0055] Furthermore, in one embodiment of the joining member of the present invention, the surface roughness (arithmetic mean roughness Ra, hereinafter the same) of the joined surfaces can be 5 nm or less. In this case, the joining force of the joining member to other members can be significantly improved.

[0056] The surface roughness of the mating surfaces is preferably less than 1 nm, more preferably less than 0.5 nm, and even more preferably less than 0.3 nm.

[0057] (The joining member of the first aspect of the present invention)

[0058] Next, refer to Figure 2An example of a joining member of the first aspect of the present invention will be described in more detail below.

[0059] Figure 2 The diagram schematically illustrates an example of a cross-section of a joining member according to a first aspect of the present invention.

[0060] like Figure 2 As shown, the joining portion (hereinafter referred to as "joining member 100") of the first embodiment of the present invention has a substrate 110 comprising an inorganic material. The substrate 110 has a first surface 112 and a second surface 114.

[0061] The first surface 112 of the substrate 110 is the bonding surface 150, which has the function of bonding with other components.

[0062] The bonded surface 150 has the following characteristics: in the N1s energy spectrum obtained by XPS, when the maximum intensity in the range of 402.5eV to 403.5eV is set as I1 and the maximum intensity in the range of 398.2eV to 399.2eV is set as I2, the ratio of I2 / I1 is greater than 1.5.

[0063] In addition, the nitrogen content of the bonding surface 150 is higher than that of the main body of the substrate 110.

[0064] For example, the nitrogen content of the bonding surface 150 may be 0.1 atomic% or more higher than that of the main body of the substrate 110. In particular, the difference between the nitrogen content in the bonding surface 150 and the nitrogen content in the main body of the substrate 110 may be 0.15 atomic% or more, 0.2 atomic% or more, 0.4 atomic% or more, 0.6 atomic% or more, or 0.8 atomic% or more.

[0065] The mating surface 150 of such a mating member 100 has a mating function, so it can be mated with another mating member without sandwiching materials such as adhesives in the middle.

[0066] In addition, the joining component 100 does not require heating to a high temperature of 600°C during joining, thus significantly avoiding heat-induced damage to the substrate 110 that may occur during joining.

[0067] (The substrate included in the joining member of the first aspect of the present invention)

[0068] Next, the base material included in the joining member 100 will be described in more detail.

[0069] (Substrate 110)

[0070] The material of the substrate 110 included in the bonding member 100 is not particularly limited as long as it is an inorganic material. The substrate 110 can be, for example, glass containing SiO2, or inorganic crystals such as sapphire (alumina) or aluminum nitride. As an inorganic crystal, it is preferable to use an inorganic crystal other than a nitride.

[0071] Furthermore, there are no particular limitations on the shape of the substrate 110. The substrate 110 can be, for example, flat (polygonal or disc-shaped) or lens-shaped.

[0072] Figure 3 and Figure 4 The diagram schematically illustrates an example of a cross-section of a substrate 110 that may be included in the joining member 100.

[0073] exist Figure 3 In the example shown, the substrate 110a has an approximately hemispherical shape. In this case, the first surface 112a of the substrate 110a corresponds to the bottom surface of the hemisphere, and the second surface 114a of the substrate 110a corresponds to the curved surface of the hemisphere. Furthermore, the first surface 112a of the substrate 110a corresponds to the bonding surface 150a.

[0074] Figure 3 The substrate 110a shown can be applied, for example, to lenses of light-emitting elements.

[0075] On the other hand, Figure 4 In the example shown, the substrate 110b is a processed component having a first surface 112b and a second surface 114b, and the substrate 110b has various feature structures. For example, in Figure 4 In the example shown, a plurality of through holes 130, a plurality of grooves 132, and a plurality of non-through recesses 134 are formed on the substrate 110b. In addition, the first surface 112b of the substrate 110b corresponds to the mating surface 150b.

[0076] It should be noted that, in this application, "groove" refers to a recessed structure with a width significantly smaller than its dimension in the extending direction when viewed from above, and "non-penetrating recess" refers to all recessed structures other than "penetrating hole" and "groove". However, the distinction between "groove" and "non-penetrating recess" is for illustrative purposes only and is not a strict distinction.

[0077] Figure 4 The substrate 110b shown can be applied, for example, to a glass plate with microflow channels.

[0078] (Another joining component of the first embodiment of the present invention)

[0079] Next, refer to Figure 5 Another joining component of the first aspect of the present invention will be described.

[0080] Figure 5 The diagram schematically illustrates an example of a cross-section of another joining member of the first aspect of the invention.

[0081] like Figure 5 As shown, another joining member of the first embodiment of the present invention (hereinafter referred to as "joining member 200") differs from the aforementioned joining member 100 and also has an inorganic dielectric membrane 220.

[0082] That is, the bonding member 200 includes: a substrate 210 containing inorganic material having a first surface 212 and a second surface 214, and an inorganic dielectric film 220 disposed on the first surface 212 of the substrate 210.

[0083] The inorganic dielectric film 220 can be a single layer or composed of multiple layers. However, the inorganic dielectric film 220 does not contain a nitride film.

[0084] The outermost surface of the inorganic dielectric membrane 220 is the bonding surface 250, which has the function of bonding with other components.

[0085] The bonded surface 250 has the following characteristics: in the N1s energy spectrum obtained by XPS, when the maximum intensity in the range of 402.5eV to 403.5eV is set as I1 and the maximum intensity in the range of 398.2eV to 399.2eV is set as I2, the ratio of I2 / I1 is greater than 1.5.

[0086] In addition, the nitrogen content of the bonded surface 250 is higher than that of the main body of the outermost layer (hereinafter referred to as "outermost layer 223") of the inorganic dielectric film 220.

[0087] For example, the nitrogen content of the bonding surface 250 may be 0.1 atomic% or more higher than that of the main body portion of the outermost layer 223. In particular, the difference between the nitrogen content in the bonding surface 250 and the nitrogen content in the main body portion of the outermost layer 223 may be 0.15 atomic% or more, 0.2 atomic% or more, 0.4 atomic% or more, 0.6 atomic% or more, or 0.8 atomic% or more.

[0088] The mating surface 250 of such a mating member 200 has a mating function, so it can be mated with another mating member without sandwiching materials such as adhesives in the middle.

[0089] In addition, the bonding member 200 does not require heating to a high temperature of 600°C when bonding with another bonding member, thus significantly avoiding heat-induced damage to the substrate 210 and the inorganic dielectric film 220.

[0090] (Inorganic dielectric membrane)

[0091] Next, the inorganic dielectric membrane 220 included in the bonding member 200 will be described in more detail.

[0092] As described above, the inorganic dielectric film 220 can be a single layer or composed of multiple layers.

[0093] When the inorganic dielectric film 220 is composed of a single layer, it may contain metal oxides, but is not limited to them. Examples of metal oxides include titanium oxide, silicon oxide, aluminum oxide, boron oxide, tin oxide, manganese oxide, and multi-component glass compositions.

[0094] On the other hand, when the inorganic dielectric film 220 is composed of multiple layers, each layer may contain different types of metal oxides. Alternatively, the inorganic dielectric film 220 may also have a repeating structure of two layers.

[0095] There are no particular limitations on the thickness of the inorganic dielectric film 220, for example, it can be in the range of 1 nm to 10 μm.

[0096] (The second type of assembly of the present invention)

[0097] Next, refer to Figure 6 An example of the joint of the second aspect of the present invention will be described.

[0098] Figure 6 The diagram schematically illustrates an example of a cross-section of the joint of the second aspect of the present invention.

[0099] like Figure 6 As shown, the second type of joint of the present invention (hereinafter referred to as "first joint 300") is formed by joining the first substrate 310 and the second substrate 360 ​​together.

[0100] The first substrate 310 comprises a glass containing less than 90 mol% SiO2.

[0101] On the other hand, the second substrate 360 ​​comprises an inorganic material. For example, the second substrate 360 ​​may comprise inorganic crystals such as sapphire (alumina) and aluminum nitride. Preferably, an inorganic crystal other than a nitride is used as the inorganic crystal. Alternatively, the second substrate 360 ​​may also comprise the same material as the first substrate 310. For example, the second substrate 360 ​​may comprise a glass containing SiO2, such as quartz glass, or a glass containing 90 mol% or less of SiO2.

[0102] The first substrate 310 has a first surface 312 and a second surface 314. Similarly, the second substrate 360 ​​has a first surface 362 and a second surface 364.

[0103] The first surface 312 of the first substrate 310 is joined to the first surface 362 of the second substrate 360. Therefore, the first surface 312 of the first substrate 310 and the first surface 362 of the second substrate 360 ​​form the joint surface 350 of the first joint 300. In other words, the joint surface 350 of the first joint 300 corresponds to the interface between the first substrate 310 and the second substrate 360.

[0104] Here, the bonding surface 350 of the first bonding body 300 has a higher nitrogen content than the main body of the first substrate 310 and / or the main body of the second substrate 360.

[0105] This is because, during the manufacture of the first bonding body 300, the first surface 312 of the first substrate 310 and / or the first surface 362 of the second substrate 360 ​​are treated with the aforementioned NH3 plasma.

[0106] For example, the nitrogen content in the bonding surface 350 may be 0.1 atomic% or more higher than the nitrogen content in the main body portion of the first substrate 310 and / or the main body portion of the second substrate 360. In particular, the difference between the nitrogen content in the bonding surface 350 and the nitrogen content in the main body portion of the first substrate 310, or the difference between the nitrogen content in the bonding surface 350 and the nitrogen content in the main body portion of the second substrate 360, may be 0.15 atomic% or more, 0.2 atomic% or more, 0.4 atomic% or more, 0.6 atomic% or more, or 0.8 atomic% or more.

[0107] In addition, the mating surface 350 of the first joint 300 has a J / m 2 The above bonding energy, or having a bonding energy of 0.7 kgf / mm 2 The above refers to the bonding strength. It should be noted that in this application, "bonding energy" and "bonding strength" are determined by the methods described below.

[0108] The bonding energy of the mating surface 350 is preferably, for example, 1.05 J / m. 2 The above is particularly preferred to be 1.1 J / m 2 That's all. Furthermore, the bonding strength of the mating surface 350 is preferably, for example, 0.85 kgf / mm². 2 The above is particularly preferred to be 1.0 kgf / mm. 2 above.

[0109] The first bonding body 300 is formed by bonding the first substrate 310 and the second substrate 360 ​​together using the bonding surfaces treated with NH3 plasma.

[0110] The first bonding body 300 can be manufactured without heat treatment exceeding 600°C when bonding the first substrate 310 and the second substrate 360. Therefore, in the first bonding body 300, the reduction in dimensional accuracy of the feature structures formed on the first substrate 310 and / or the second substrate 360, as well as the degradation of the devices disposed on the first substrate 310 and / or the second substrate 360, can be significantly suppressed.

[0111] Furthermore, in the bonding method that uses the bonding surfaces obtained by NH3 plasma treatment, there are fewer restrictions on the first substrate 310 and the second substrate 360, so it is possible to obtain a bonded body with a combination of various materials.

[0112] There are no particular limitations on the shape of the first substrate 310 / second substrate 360. For example, the first substrate 310 / second substrate 360 ​​can be flat (polygonal or disc-shaped) or lens-shaped, etc.

[0113] (Example of the application of the second type of joint of the present invention)

[0114] Next, refer to Figure 7 and Figure 8 An application example of the joint of the second aspect of the present invention will be described.

[0115] Figure 7 The diagram schematically illustrates an example of a cross-section of a device to which the second aspect of the invention is applied.

[0116] like Figure 7 As shown, in this example, the first junction 300a is configured as part of the LED element 301.

[0117] Specifically, the first joint 300a has a first substrate 310a and a second substrate 360a, with a joint surface 350a between them. The first substrate 310a has a first surface 312a and a second surface 314a. The second substrate 360a has a first surface 362a and a second surface 364a. The first surface 312a of the first substrate 310a and the first surface 362a of the second substrate 360a constitute the joint surface 350a.

[0118] The first substrate 310a is configured, for example, to have the conditions described above. Figure 3 The lens has the shape shown. Therefore, the second surface 314a of the first substrate 310a is curved. On the other hand, the second substrate 360a is configured as a support substrate for supporting the constituent components of the LED element 301. Phosphor particles may be dispersed in the first substrate 310a.

[0119] A semiconductor layer stack including a buffer layer 368 and an active region 370, a first electrode 372, and a second electrode 374 are disposed on the second surface 364a of the second substrate 360a. The active region 370 typically has a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. In addition, a carrier 375 for supporting the LED element 301 is disposed on the side of the LED element 301 opposite to the lens (first substrate 310a).

[0120] In this way, the first bonding body 300a can be applied to a part of the light-emitting element.

[0121] on the other hand, Figure 8 The diagram schematically illustrates an example of a cross-section of a device to which the second aspect of the invention is applied.

[0122] like Figure 8 As shown, in this example, the first bonding body 300b is applied to a glass plate 302 with a microflow path. That is, the first bonding body 300b is formed by joining a first substrate 310b, which is a processing member, and a second substrate 360b, which is another processing member.

[0123] The first substrate 310b has a first surface 312b and a second surface 314b, and has a plurality of feature structures. These feature structures may, for example, be one or more through holes 330b, one or more grooves 332b, and one or more non-through recesses 334b. The minimum size of the feature structures may be in the nanometer range.

[0124] Similarly, the second substrate 360b has a first surface 362b and a second surface 364b, and has a plurality of feature structures. These feature structures may, for example, be one or more grooves 382b and one or more non-through recesses 384b. However, the second substrate 360b may also not contain any feature structures.

[0125] In addition, such as Figure 8 As shown, on the bonding surface 350b of the first substrate 310b and the second substrate 360b, other feature structures 386b and 388b can also be formed by overlapping the feature structures contained in the two substrates.

[0126] In this way, the first joint 300b can be applied to a part of the joint of a micro-machined component.

[0127] (The second embodiment of the present invention: method for manufacturing the joint)

[0128] Next, refer to Figure 9 An example of a method for manufacturing a joint according to the second aspect of the present invention will be described.

[0129] Figure 9The diagram schematically illustrates an example of the process for manufacturing a joint according to the second aspect of the present invention.

[0130] like Figure 9 As shown, the method for manufacturing the joint of the second aspect of the present invention (hereinafter referred to as the "first method") includes the following steps: (1) Steps for preparing the first substrate and the second substrate (process S110); (2) A step of performing NH3 plasma treatment on the joint surface of at least one of the first substrate and the second substrate (step S120); and (3) Step of joining the first substrate and the second substrate via the joined surfaces (step S130).

[0131] The following provides a more detailed explanation of each process. It should be noted that, as an example, the process described here... Figure 6 The manufacturing method of the first joint 300 shown is described using this example. Therefore, when referring to each component, the term "manufacturing method" is used. Figure 6 The reference symbol shown.

[0132] (Process S110)

[0133] First, prepare the first substrate 310 and the second substrate 360.

[0134] The first substrate 310 has a first surface 312 and a second surface 314. The second substrate 360 ​​has a first surface 362 and a second surface 364.

[0135] The form of the first substrate 310 and the second substrate 360 ​​is not particularly limited, and the first substrate 310 and / or the second substrate 360 ​​may have, for example, the forms described above. Figure 3 or Figure 4 The shape shown.

[0136] It should be noted that, for clarity, we assume that both the first substrate 310 and the second substrate 360 ​​are flat panels, and the following explanation will follow.

[0137] (Process S120)

[0138] Next, the first surface 312 of the first substrate 310 is subjected to NH3 plasma treatment. The conditions for NH3 plasma treatment are not particularly limited as long as the bonding function is exhibited on the surfaces to be bonded. For example, the following conditions can be used.

[0139] <Plasma Mode>

[0140] Various plasma methods can be used, including dielectric barrier discharge (DBD), corona discharge, inductively coupled plasma (ICP), capacitively coupled plasma (CAPP), and microwave plasma. Among these, the dielectric barrier method is preferred. In the dielectric barrier method, filamentary plasma discharge can occur at the bonding surface, which readily promotes the modification of the bonding surface based on plasma discharge, which is crucial for improving the bonding function of inorganic materials.

[0141] <Power Supply>

[0142] • Use AC power or pulse output power. The voltage should be in the range of 1kV to 20kV.

[0143] (frequency)

[0144] • In the case of dielectric barrier discharge and corona discharge, 1kHz~100kHz

[0145] • In both inductively coupled plasma and capacitively coupled plasma modes, 13.56MHz

[0146] • In the case of microwave plasma mode, 2.45 GHz

[0147] <Gas Composition>

[0148] • A mixture of NH3 and a carrier gas is used. The carrier gas can be selected from inert gases such as argon, nitrogen, and / or helium, but is not limited to these. From the viewpoint of easily generating NH radicals, a mixture of NH3 and argon is preferred.

[0149] The ratio of NH3 to carrier gas can be, for example, NH3:carrier gas = 1:99 to 50:50 (volume ratio). From the viewpoint of processing time, the concentration of NH3 is preferably 1% or more.

[0150] From the viewpoint of easily generating plasma, the concentration of NH3 is preferably 50% or less, more preferably 10% or less.

[0151] <Stress>

[0152] From the viewpoint that NH free radicals are easily generated, it is preferable to use a pressure in the range of 101 kPa ± 50 kPa, and more preferably a pressure in the range of 101 kPa ± 20 kPa.

[0153] <Processing Time>

[0154] From the viewpoint of generating sufficient NH2 groups on the bonding surface, the processing time is preferably 1 minute or more, more preferably 5 minutes or more. When the processing time exceeds a certain time, the number of NH2 groups in the bonding surface remains essentially constant. Therefore, from the viewpoint of appropriately suppressing the processing time, the processing time is preferably 30 minutes or less, more preferably 10 minutes or less.

[0155] By treating with NH3 plasma, a bonding surface with bonding function is obtained on the first surface 312 of the first substrate 310.

[0156] It should be noted that, if necessary, the first surface 362 of the second substrate 360 ​​can also be subjected to NH3 plasma treatment. In this case, a bonded surface with bonding function can also be obtained in the second substrate 360.

[0157] Before performing NH3 plasma treatment on the first surface 312 of the first substrate 310 and the first surface 362 of the second substrate 360, a cleaning treatment may be performed on the first surface 312 of the first substrate 310 and the first surface 362 of the second substrate 360. Examples of cleaning treatments include UV cleaning treatment and atmospheric pressure water vapor plasma treatment.

[0158] (Process S130)

[0159] Next, the first substrate 310 and the second substrate 360 ​​are brought into contact through the surfaces to be joined, forming a joint.

[0160] It should be noted that a bond with high bonding strength has been obtained at this stage. However, the resulting bond can be further subjected to heat treatment. The heat treatment temperature is, for example, in the range of 100°C to 300°C. The heat treatment temperature is preferably below 250°C, more preferably below 200°C.

[0161] In addition, when joining the first substrate 310 and the second substrate 360, pressure can be applied to the first substrate 310 and the second substrate 360 ​​as needed to join them together.

[0162] It should be noted that in manufacturing as described above Figure 7 When the first joint 300a is shown, the pressing (load) is preferably 0.1 kg to 5 kg. Furthermore, the load application time is preferably 1 second to 30 minutes. Additionally, the subsequent heating time is preferably 5 minutes to 4 hours.

[0163] Furthermore, in the above description, the component is heated after being pressed. However, it is also possible to perform heat treatment and load application on the component simultaneously, which is different from this.

[0164] Through the above processes, a first joint 300 with the characteristics described above can be manufactured.

[0165] (The third-party connector of the present invention)

[0166] Next, refer to Figure 10 An example of a third-party coupling according to the present invention will be described.

[0167] Figure 10 The diagram schematically illustrates an example of a cross-section of the third-order coupling of the present invention.

[0168] like Figure 10 As shown, the third-party bonding body of the present invention (hereinafter referred to as "second bonding body 400") has a first substrate 410, a second substrate 460 and an inorganic dielectric film 420 disposed between the two.

[0169] The first substrate 410 and the second substrate 460 contain inorganic materials. For example, the first substrate 410 and the second substrate 460 may contain SiO2-containing glass such as quartz glass, or inorganic crystals such as sapphire (alumina) or aluminum nitride. As inorganic crystals, inorganic crystals other than nitrides are preferred. In addition, the second substrate 460 may contain the same material as the first substrate 410.

[0170] The inorganic dielectric membrane 420 can be a single layer or composed of multiple layers. However, the inorganic dielectric membrane 220 does not contain a nitride membrane.

[0171] The inorganic dielectric film 420 can have the same characteristics as the inorganic dielectric film 220 described above. The thickness of the inorganic dielectric film 420 is not particularly limited, and can, for example, be in the range of 1 nm to 10 μm.

[0172] The first substrate 410 has a first surface 412 and a second surface 414. Similarly, the second substrate 460 has a first surface 462 and a second surface 464. An inorganic dielectric film 420 is disposed between the first surface 412 of the first substrate 410 and the first surface 462 of the second substrate 460.

[0173] The second joint 400 has a joint surface.

[0174] The position of the mating surface of the second joint 400 depends on the manufacturing method of the second joint 400, and can be one of the following three methods: (i) The bonding surface is located at the interface between the first substrate 410 and the inorganic dielectric film 420. Figure 10 (Position of the mating surface 450A in the middle); (ii) The bonding surface is located at the interface between the second substrate 460 and the inorganic dielectric film 420. Figure 10(The position of the mating surface 450B in the middle); (iii) The case where the bonding surface is located inside the inorganic dielectric film 420 ( Figure 10 (The location of the mating surface 450C in the middle).

[0175] Among them, (i) corresponds to the case in which, during the manufacturing process of the second bonding body 400, the second substrate 460 has an inorganic dielectric film 420, and the first substrate 410 does not contain a film on the first surface 412.

[0176] That is, in this case, as in step S120 of the first method described above, NH3 plasma treatment is performed on the outermost surface of the inorganic dielectric film 420 formed on the second substrate 460 and / or the first surface 412 of the first substrate 410. Then, as in step S130 of the first method, the first substrate 410 and the second substrate 460 are arranged such that the treated surfaces are joined together to form a second bond 400, at which point a bonding surface 450A is obtained.

[0177] In case (i), the following feature is obtained: the nitrogen content in the bonding surface 450A is higher than that in the main body of the first substrate 410 and the outermost main body of the inorganic dielectric film 420.

[0178] In particular, the difference between the nitrogen content in the bonding surface 450A and the nitrogen content in the main body of the first substrate 410, or the difference between the nitrogen content in the bonding surface 450A and the nitrogen content in the main body of the outermost layer of the inorganic dielectric film 420, can be 0.1 atomic% or more, 0.15 atomic% or more, 0.2 atomic% or more, 0.4 atomic% or more, 0.6 atomic% or more, or 0.8 atomic% or more.

[0179] Additionally, case (ii) corresponds to the case in which, during the manufacturing process of the second bonding body 400, the first substrate 410 has an inorganic dielectric film 420, and the second substrate 460 does not contain a film on the first surface 462.

[0180] That is, in this case, as in step S120 of the first method described above, NH3 plasma treatment is performed on the outermost surface of the inorganic dielectric film 420 formed on the first substrate 410 and / or the first surface 462 of the second substrate 460. Then, as in step S130 of the first method, the first substrate 410 and the second substrate 460 are arranged such that the treated surfaces are joined together to form a second bond 400, at which point a bonding surface 450B is obtained.

[0181] In case (ii), the following feature is obtained: the nitrogen content in the bonding surface 450B is higher than that in the main body of the second substrate 460 and the outermost main body of the inorganic dielectric film 420.

[0182] In particular, the difference between the nitrogen content in the bonding surface 450B and the nitrogen content in the main body of the second substrate 460, or the difference between the nitrogen content in the bonding surface 450B and the nitrogen content in the main body of the outermost layer of the inorganic dielectric film 420, can be 0.1 atomic% or more, 0.15 atomic% or more, 0.2 atomic% or more, 0.4 atomic% or more, 0.6 atomic% or more, or 0.8 atomic% or more.

[0183] Next, (iii) corresponds to the case in the manufacturing process of the second bonding body 400 where the first substrate 410 has a portion of the inorganic dielectric film 420 (referred to as "the first portion of the inorganic dielectric film 420") and the second substrate 460 has the remaining portion of the inorganic dielectric film 420 (referred to as "the second portion of the inorganic dielectric film 420").

[0184] That is, in this case, as in step S120 of the first method described above, the outermost surface of the first portion of the inorganic dielectric film 420 formed on the first substrate 410 and / or the outermost surface of the second portion of the inorganic dielectric film 420 formed on the second substrate 460 are subjected to NH3 plasma treatment. Then, as in step S130 of the first method, the first substrate 410 and the second substrate 460 are arranged such that the treated surfaces are joined together to form a second bond 400, at which point a bonding surface 450C is obtained.

[0185] In case (iii), the following characteristic is obtained: the nitrogen content in the bonding surface 450C is higher than that in the outermost body portion of the first part of the inorganic dielectric film 420 and the outermost body portion of the second part of the inorganic dielectric film 420.

[0186] In particular, the difference between the nitrogen content in the bonding surface 450C and the nitrogen content in the main body of the outermost layer of the first part of the inorganic dielectric film 420, or the difference between the nitrogen content in the bonding surface 450C and the nitrogen content in the main body of the outermost layer of the second part of the inorganic dielectric film 420, can be 0.1 atomic% or more, 0.15 atomic% or more, 0.2 atomic% or more, 0.4 atomic% or more, 0.6 atomic% or more, or 0.8 atomic% or more.

[0187] It should be noted that, in case (iii), the bonding surface 450C may not necessarily exist at the interface between adjacent layers within the inorganic dielectric film 420.

[0188] For example, when the first substrate 410 has a titanium dioxide layer on its first surface 412 and the second substrate 460 has a titanium dioxide layer on its first surface 462, and the first substrate 410 and the second substrate 460 are bonded by overlapping the titanium dioxide layers of both substrates, the inorganic dielectric film 420 (although the thickness is increased) appears to be composed of a single titanium dioxide layer. In this case, the bonding surface 450C exists within a single layer (titanium dioxide layer).

[0189] Furthermore, in all cases (i) to (iii), the mating surface (450A, 450B, or 450B) has a strength of 0.5 J / m. 2 The above bonding energy, or having a bonding energy of 0.4 kgf / mm 2 The above bonding strength.

[0190] The bonding energy of the mating surfaces (450A, 450B, or 450B) is preferably, for example, 0.6 J / m. 2 The above is particularly preferred to be 0.7 J / m 2 That's all. Furthermore, the bonding strength of the mating surfaces (450A, 450B, or 450B) is preferably, for example, 0.6 kgf / mm². 2 The above, more preferably 0.8 kgf / mm 2 The above is particularly preferred to be 1.0 kgf / mm. 2 above.

[0191] The second bonding body 400 can also achieve the same effects as the first bonding body 300 described above, which will be obvious to those skilled in the art. That is, the second bonding body 400 can also be manufactured without high-temperature heat treatment exceeding 600°C, thus significantly suppressing device degradation and / or reduction in dimensional accuracy. In addition, in bonding methods using bonding surfaces obtained by NH3 plasma treatment, there are fewer restrictions on the first substrate 410 and the second substrate 460, thus enabling the acquisition of bonding bodies with various combinations of materials.

[0192] Incidentally, the bonding technology using NH3 plasma treatment in the first method described above can also be used for bonding the sealing cover to the superlens. The superlens, for example, consists of a substrate and an arrangement of multiple microstructures formed on that substrate. The substrate constituting the superlens is, for example, quartz or multi-component glass (especially multi-component glass used in semiconductor processes). The microstructures constituting the superlens are, for example, silicon, titanium oxide, niobium oxide, tantalum oxide, hafnium oxide, or silicon nitride. The superlens may also have annular structures on the substrate, different from the microstructures, surrounding them. Such annular structures are provided, for example, to increase the bonding surface between the sealing cover and the superlens and improve sealing performance. The aforementioned annular structures are, for example, made of the same material as the microstructures. The microstructures and the aforementioned annular structures may have a silicon dioxide film on the surface opposite to the surface contacting the substrate. The sealing cover, for the purpose of protecting the superlens, is bonded to the microstructures in a form opposite to the substrate. The sealing cover is, for example, quartz or multi-component glass (especially multi-component glass used in semiconductor processes). When joining the sealing cover and the superlens, the surface of the superlens containing microstructures can be treated with NH3 plasma, the surface of the sealing cover can be treated with NH3 plasma, and both can be treated with NH3 plasma.

[0193] Example

[0194] The embodiments of the present invention will be described below. It should be noted that, in the following description, Examples 1 to 3, Examples 21 to 36, Examples 52, Examples 61 to 63 and Examples 81 to 82 are examples, and Examples 11 to 13, Examples 41 to 46, Examples 71 to 72 and Examples 91 to 92 are comparative examples.

[0195] (Example 1)

[0196] The joining components were manufactured using the following method.

[0197] First, a flat glass substrate with dimensions of 50mm in length, 50mm in width, and 0.5mm in thickness was prepared. The composition of the glass substrate used is shown in the "Glass A" column of Table 1 below.

[0198] Next, the first surface of the glass substrate (a surface with a longitudinal length of 50 mm and a transverse length of 50 mm) was subjected to NH3 plasma treatment.

[0199] NH3 plasma treatment is performed within a plasma treatment apparatus. Specifically, with a glass substrate disposed within the plasma treatment apparatus, a reactive gas is supplied to the apparatus. The reactive gas is plasmaified and irradiated onto a first surface of the glass substrate.

[0200] The plasma treatment conditions are as follows: <Plasma Mode> DBD method <Power Supply> Use a 15kHz AC power supply. The voltage is 8kV.

[0201] <Reactive Gases>

[0202] A mixture of NH3 and Ar gas (NH3:Ar = 5:95 (volume ratio))

[0203] <Processing Time>

[0204] 300 seconds.

[0205] Thus, a joining component (hereinafter referred to as "joining component 1") was manufactured.

[0206] [Table 1]

[0207] (Example 2)

[0208] The bonding component was fabricated using the same method as in Example 1. However, in this Example 2, a sapphire substrate was used instead of a glass substrate. Other conditions were the same as in Example 1.

[0209] The resulting joining component is referred to as "joining component 2".

[0210] (Example 3)

[0211] The joining component was manufactured using the same method as in Example 1. However, in Example 3, the composition of "Glass B" in Table 1 above, i.e., a quartz glass substrate, was used as the glass substrate. Other conditions were the same as in Example 1.

[0212] The resulting joining component is referred to as "joining component 3".

[0213] (Example 11)

[0214] The bonding component was fabricated using the same method as in Example 1. However, in this Example 11, a sequential plasma treatment (hereinafter referred to as "SPB" treatment) was performed on the first surface of the glass substrate.

[0215] Specifically, the glass substrate was subjected to reactive ion etching (RIE) using oxygen, reactive ion etching (RIE) using nitrogen, and nitrogen free radical irradiation in sequence.

[0216] Oxygen RIE treatment was set to 180 seconds. Nitrogen RIE treatment was set to 180 seconds. Nitrogen free radical irradiation was set to 15 seconds.

[0217] It should be noted that no heat treatment was applied to the processed glass substrate.

[0218] The resulting joining component is referred to as "joining component 11".

[0219] (Example 12)

[0220] The bonding component was fabricated using the same method as in Example 11. However, in Example 12, a sapphire substrate was used instead of a glass substrate. Other conditions were the same as in Example 11.

[0221] The resulting joining component is referred to as "joining component 12".

[0222] (Example 13)

[0223] The joining component was manufactured using the same method as in Example 11. However, in Example 13, a quartz glass substrate was used instead of a glass substrate. Other conditions were the same as in Example 11.

[0224] The resulting joining component is referred to as "joining component 13".

[0225] (evaluate)

[0226] XPS analysis of the first surface was performed using bonding components 1 to 3 and bonding components 11 to 13. A Quantera II XPS apparatus manufactured by ULVAC-PHI Corporation was used. In one example of the measurement conditions, the N1s energy spectrum was obtained in the range of 392 eV to 408 eV with a flux of 112 eV. The baseline of the N1s energy spectrum was subtracted using the Shirley method, but this condition is not a limitation.

[0227] Figures 11-13 The results of the measured N1s energy spectrum are shown in the figures. In these figures, the horizontal axis represents binding energy, and the vertical axis represents intensity.

[0228] exist Figure 11 The results obtained by joining member 1 and joining member 11 are shown in comparison. Figure 12 The results obtained by the joining member 2 and the joining member 12 are shown in comparison. Furthermore, in... Figure 13 The results obtained by the joining member 3 and the joining member 13 are shown in comparison.

[0229] like Figure 11 As shown, a large peak was observed at the position of the bonding energy 398.7 eV for bonding member 1. On the other hand, a large peak was observed at the position of the bonding energy 403.0 eV for bonding member 11.

[0230] Based on the results obtained, for each joint component, the ratio I2 / I1 was calculated when the maximum strength in the range of bonding energy from 402.5eV to 403.5eV was set as I1, and the maximum strength in the range of bonding energy from 398.2eV to 399.2eV was set as I2.

[0231] The specifications of each joint component and the resulting I2 / I1 ratio are summarized in Table 2 below.

[0232] [Table 2]

[0233] As shown in Table 2, when the surface of the substrate is treated with NH3 plasma, the ratio of I2 / I1 is greater than 1.5.

[0234] Figure 14 The diagram shows an example of the depth-direction distribution of nitrogen content in the first surface of the bonding member 3. In the measurement, a Quantera II instrument manufactured by ULVAC-PHI Co., Ltd. was used, employing depth-direction analysis via Ar+ ion sputtering.

[0235] Depend on Figure 14 It can be seen that nitrogen is enriched on the outermost surface, and at a depth of 1 nm, the nitrogen content decreases to the same level as that in the main body. The difference between the nitrogen content in the outermost surface and the nitrogen content in the main body is more than 0.1 atomic%.

[0236] The results show that in the NH3 plasma treated surface, nitrogen is enriched in the region with a maximum depth of about 1 nm from the surface.

[0237] (Example 21)

[0238] The joint was fabricated using the following method.

[0239] First, two flat glass substrates, each 50mm long × 50mm wide × 0.5mm thick, were prepared as the first and second substrates. The glass substrates used the composition of glass A in Table 1 above.

[0240] Next, NH3 plasma treatment was performed on the first surface of the first substrate (a surface with a longitudinal length of 50 mm and a transverse length of 50 mm). The conditions for NH3 plasma treatment were the same as those in Example 1 above.

[0241] The second substrate was also subjected to NH3 plasma treatment under the same conditions.

[0242] Next, the second substrate is placed on the first substrate such that the first surface of the first substrate overlaps with the first surface of the second substrate. Then, in this state, the assembly is heated to bond the two together. The heating temperature is set to 200°C, and the heating time is set to 1 hour.

[0243] Thus, the joint (hereinafter referred to as "joint 21") was created.

[0244] (Example 22)

[0245] The joint was fabricated using the same method as in Example 21. However, in Example 22, the heating temperature during the joining process was set to 250°C.

[0246] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 22") was produced.

[0247] (Example 23)

[0248] The joint was fabricated using the same method as in Example 21. However, in Example 23, the heating temperature during the joining process was set to 300°C.

[0249] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 23") was produced.

[0250] (Example 24)

[0251] The joint was made using the same method as in Example 21.

[0252] However, in Example 24, only the first substrate was subjected to NH3 plasma treatment. The first surface of the second substrate was subjected to atmospheric pressure water vapor plasma treatment.

[0253] In atmospheric pressure water vapor plasma treatment, a mixture of water vapor and Ar (water vapor:Ar = 1:99 (volume ratio)) is used to irradiate the second substrate with atmospheric pressure dielectric barrier discharge plasma. The treatment time is set to 300 seconds.

[0254] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 24") was produced.

[0255] (Example 25)

[0256] The joint was made using the same method as in Example 21.

[0257] However, in Example 25, only the first substrate underwent NH3 plasma treatment. The first surface of the second substrate underwent only UV cleaning treatment. A commercially available ozone cleaner was used in the UV cleaning treatment. The treatment time was set to 600 seconds.

[0258] In addition, in Example 25, the heating temperature during the bonding process was set to 250°C.

[0259] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 25") was produced.

[0260] (Example 26)

[0261] The joint was made using the same method as in Example 25.

[0262] However, in Example 26, the heating temperature during the bonding process was set to 300°C.

[0263] The other conditions are the same as in Example 25. Thus, a joint (hereinafter referred to as "joint 26") was produced.

[0264] (Example 27)

[0265] The joint was made using the same method as in Example 21.

[0266] However, in this Example 27, a glass substrate with the composition shown in "Glass C" of Table 1 above was used as the first substrate and the second substrate.

[0267] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 27") was produced.

[0268] (Example 28)

[0269] The joint was made using the same method as in Example 22.

[0270] However, in this example 28, a glass substrate with the composition shown in "Glass C" of Table 1 above was used as the first substrate and the second substrate.

[0271] The other conditions are the same as in Example 22. Thus, a joint (hereinafter referred to as "joint 28") was produced.

[0272] (Example 29)

[0273] The joint was made using the same method as in Example 23.

[0274] However, in this Example 29, a glass substrate with the composition shown in "Glass C" of Table 1 above was used as the first substrate and the second substrate.

[0275] The other conditions are the same as in Example 23. Thus, a joint (hereinafter referred to as "joint 29") was produced.

[0276] (Example 30)

[0277] The joint was made using the same method as in Example 27.

[0278] However, in Example 30, only the first substrate underwent NH3 plasma treatment. The first surface of the second substrate underwent atmospheric pressure water vapor plasma treatment. The conditions for atmospheric pressure water vapor plasma treatment were the same as in Example 24.

[0279] The other conditions are the same as in Example 27. Thus, a joint (hereinafter referred to as "joint 30") was produced.

[0280] (Example 31)

[0281] The joint was made using the same method as in Example 25.

[0282] However, in this example 31, a glass substrate with the composition shown in "Glass C" of Table 1 above was used as the first substrate and the second substrate.

[0283] The other conditions are the same as in Example 25. Thus, a joint (hereinafter referred to as "joint 31") was produced.

[0284] (Example 32)

[0285] The joint was made using the same method as in Example 26.

[0286] However, in this example 32, a glass substrate with the composition shown in "Glass C" of Table 1 above was used as the first substrate and the second substrate.

[0287] The other conditions are the same as in Example 26. Thus, a joint (hereinafter referred to as "joint 32") was produced.

[0288] (Example 33)

[0289] The joint was made using the same method as in Example 21.

[0290] However, in this example 33, a glass substrate with the composition shown in "Glass D" of Table 1 above was used as the first substrate and the second substrate.

[0291] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 33") was produced.

[0292] (Example 34)

[0293] The joint was made using the same method as in Example 33.

[0294] However, in Example 34, only the first substrate underwent NH3 plasma treatment. The first surface of the second substrate underwent atmospheric pressure water vapor plasma treatment. The conditions for atmospheric pressure water vapor plasma treatment were the same as in Example 24.

[0295] The other conditions are the same as in Example 33. Thus, a joint (hereinafter referred to as "joint 34") was produced.

[0296] (Example 35)

[0297] The joint was made using the same method as in Example 21.

[0298] However, in this example 35, a glass substrate with the composition shown in "Glass E" of Table 1 above was used as the first substrate and the second substrate.

[0299] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 35") was produced.

[0300] (Example 36)

[0301] The joint was made using the same method as in Example 35.

[0302] However, in Example 36, only the first substrate underwent NH3 plasma treatment. The first surface of the second substrate underwent atmospheric pressure water vapor plasma treatment. The conditions for atmospheric pressure water vapor plasma treatment were the same as in Example 24.

[0303] The other conditions are the same as in Example 35. Thus, a joint (hereinafter referred to as "joint 36") was produced.

[0304] (Example 41)

[0305] The joint was made using the same method as in Example 21.

[0306] However, in this example 41, atmospheric pressure water vapor plasma treatment was performed on the first surface of the first substrate and the second substrate.

[0307] The conditions for atmospheric pressure water vapor plasma treatment are the same as those shown in Example 24.

[0308] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 41") was produced.

[0309] (Example 42)

[0310] The joint was made using the same method as in Example 21.

[0311] However, in Example 42, only UV cleaning treatment was performed on the first surfaces of the first substrate and the second substrate.

[0312] The conditions for UV cleaning treatment are the same as those shown in Example 25 above.

[0313] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 42") was produced.

[0314] (Example 43)

[0315] The joint was made using the same method as in Example 21.

[0316] However, in this example 43, SPB treatment was performed on the first surface of the first substrate and the second substrate.

[0317] The conditions for SPB processing are the same as those in Example 11 above.

[0318] The other conditions are the same as in Example 21. Thus, a joint (hereinafter referred to as "joint 43") was made.

[0319] (Example 44)

[0320] The joint was made using the same method as in Example 27.

[0321] However, in Example 44, atmospheric pressure water vapor plasma treatment was performed on the first surfaces of the first substrate and the second substrate. The conditions for atmospheric pressure water vapor plasma treatment were the same as in Example 24.

[0322] The other conditions are the same as in Example 27. Thus, a joint (hereinafter referred to as "joint 44") was produced.

[0323] (Example 45)

[0324] The joint was made using the same method as in Example 27.

[0325] However, in Example 45, only UV cleaning treatment was performed on the first surfaces of the first and second substrates. The conditions for UV treatment were the same as in Example 25.

[0326] The other conditions are the same as in Example 27. Thus, a joint (hereinafter referred to as "joint 45") was produced.

[0327] (Example 46)

[0328] The joint was made using the same method as in Example 27.

[0329] However, in this Example 46, SPB treatment was performed on the first surfaces of the first substrate and the second substrate. The conditions for SPB treatment were the same as in Example 11 above.

[0330] The other conditions are the same as in Example 27. Thus, a joint (hereinafter referred to as "joint 46") was produced.

[0331] The manufacturing conditions for each assembly are summarized in Table 3 below.

[0332] [Table 3]

[0333] (evaluate)

[0334] The bonding energy was evaluated using joints 21 to 36 and joints 41 to 46.

[0335] The bonding energy is determined by the crack opening method.

[0336] The crack opening method involves inserting a razor blade or similar cutting tool into the bonding surface of a first and second substrate from the outside and measuring the peel length L. Generally, a shorter peel length L indicates a higher bonding energy.

[0337] When calculating the bonding energy γ based on the peel length L, the following relationship (1) is used.

[0338]

[0339] Here, in equation (1), E1 and E2 are the Young's moduli of the first and second substrates, respectively, and t1 and t2 are the maximum thicknesses of the first and second substrates, respectively. Additionally, t0 is the thickness of the blade. The bonding energy γ is expressed in J / m². 2 .

[0340] Details of the crack opening method are described in International Publication No. WO2020 / 175396.

[0341] The evaluation results are summarized in Table 4 below.

[0342] [Table 4]

[0343] The results show that joints 21 to 36 all achieved a strength of 1.00 J / m. 2 The above-mentioned high bonding energy. Furthermore, it is known that even when only one of the two substrates is treated with NH3 plasma, good bonding can be achieved, just as when both substrates are treated with NH3 plasma.

[0344] On the other hand, it is known that joints 41 to 46 do not achieve good bonding strength. For example, when comparing with the same substrate composition (glass A), it is known that joints 21 to 26 achieve higher bonding energy compared to joints 41 to 43. Similarly, when comparing with the composition of glass C, it is known that joints 27 to 31 achieve higher bonding energy compared to joints 44 to 46.

[0345] (Example 52)

[0346] The joint was fabricated using the following method.

[0347] First, we prepared such as Figure 3 A hemispherical lens of the shape shown is used as the first substrate. The hemispherical lens is made of glass and has the composition shown as "Glass F" in Table 1 above. The diameter of the hemispherical lens is 3 mm.

[0348] Additionally, a portion of the support substrate for the LED element (manufactured by Fukushima, with an emission wavelength of 280nm) is used as a second substrate. The support substrate is made of sapphire. The LED element is a flip-chip structure, with the support substrate serving as the light-emitting surface of the LED chip, exposed on its surface.

[0349] Next, the bottom surface of the first substrate (the 3mm diameter planar portion of the hemispherical lens) was subjected to NH3 plasma treatment. The conditions for NH3 plasma treatment were the same as in Example 1 above. The first surface of the second substrate (the light-emitting surface of the 1mm × 1mm LED chip) was also subjected to NH3 plasma treatment under the same conditions.

[0350] Next, the first substrate is placed on the second substrate such that the bottom surface of the first substrate overlaps the first surface of the second substrate. Then, a load of 1.5 kg is applied to the assembly and held for 1 minute.

[0351] Next, heat the components at 200°C for 30 minutes.

[0352] Thus, the joint (hereinafter referred to as "joint 52") was created.

[0353] A shear test was conducted using the resulting joint 52.

[0354] A schematic diagram of the apparatus used in the shear test is shown below. Figure 15 .

[0355] like Figure 15 As shown, the device 610 includes a blank shearing tester 612 with a pressure head 613 and a base 614.

[0356] Before the test, the joint A was glued to the upper part of the base 614 with adhesive 616. It should be noted that in this test, the joint A was set on the base 614 with the second substrate C side as the adhesive 616 side.

[0357] Next, the pressure head 613 of the bare die shear tester 612 is positioned near the joint A.

[0358] The pressure head 613 is configured such that its front end is offset upward (to the side of the first substrate B) from the joint surface between the first substrate B and the second substrate C in the joint body A.

[0359] Next, move the pressure head 613 horizontally (in the direction of arrow F1). Set the moving speed to 0.2 mm / second.

[0360] The load (converted per unit area) when the joint A breaks due to pressure from the pressure head 613 was measured.

[0361] It should be noted that in the shear test, if the joint A peels off at the joint surface between the first substrate B and the second substrate C, the measured load is considered the joint strength. On the other hand, if the joint A breaks at a location other than the joint surface, the joint strength of the joint A is considered to be greater than or equal to the measured load.

[0362] The shear test results show that the joint strength of joint 52 is 1.27 kgf / mm². 2 above.

[0363] (Example 61)

[0364] The joint was fabricated using the following method.

[0365] First, a 2-inch diameter substrate was prepared as both the first and second substrates. × A disc-shaped sapphire substrate with a thickness of 0.4 mm.

[0366] Next, a SiO2 film was formed on the first surface of the first substrate using reactive sputtering. Using silicon metal as the target, the SiO2 film thickness was 10 nm. Conversely, a TiO2 film was formed on the first surface of the second substrate using reactive sputtering. Using titanium metal as the target, the TiO2 film thickness was 10 nm.

[0367] Next, the surface of the SiO2 film on the first substrate was subjected to NH3 plasma treatment. The conditions for NH3 plasma treatment were the same as in Example 1 above. However, the treatment time was set to 600 seconds.

[0368] On the other hand, atmospheric pressure water vapor plasma treatment was performed on the surface of the TiO2 film of the second substrate. The conditions for atmospheric pressure water vapor plasma treatment were the same as those in Example 24 above.

[0369] Next, the second substrate is disposed on the first substrate such that the SiO2 film of the first substrate overlaps with the TiO2 film of the second substrate. Then, in this state, the assembly is heated to bond the two together. The heating temperature is set to 200°C, and the heating time is set to 1 hour.

[0370] Thus, a joint (hereinafter referred to as "joint 61") was created.

[0371] (Example 62)

[0372] The bond was fabricated using the same method as in Example 61. However, in Example 62, a SnO2 film with a thickness of 10 nm was formed on the surface of the second substrate instead of the TiO2 film.

[0373] The other conditions are the same as in Example 61. Thus, a joint (hereinafter referred to as "joint 62") was produced.

[0374] (Example 63)

[0375] The bond was fabricated using the same method as in Example 61. However, in Example 63, an Al2O3 film with a thickness of 10 nm was formed on the surface of the second substrate instead of the TiO2 film.

[0376] The other conditions are the same as in Example 61. Thus, a joint (hereinafter referred to as "joint 63") was produced.

[0377] (Example 71)

[0378] The bond was fabricated using the same method as in Example 61. However, in Example 71, the surface of the SiO2 film on the first substrate was subjected to atmospheric pressure water vapor plasma treatment. The conditions for atmospheric pressure water vapor plasma treatment were the same as in Example 24 above.

[0379] The other conditions are the same as in Example 61. Thus, a joint (hereinafter referred to as "joint 71") was produced.

[0380] (Example 72)

[0381] The bond was fabricated using the same method as in Example 61. However, in this Example 72, SPB treatment was applied to the surface of the SiO2 film on the first substrate and the surface of the TiO2 film on the second substrate. The conditions for the SPB treatment were the same as in Example 11 above.

[0382] Thus, the joint (hereinafter referred to as "joint 72") was created.

[0383] The manufacturing conditions for each assembly are summarized in Table 5 below.

[0384] [Table 5]

[0385] (evaluate)

[0386] The bonding energy was evaluated using joints 61 to 63 and joints 71 to 72. The bonding energy was determined by the aforementioned crack opening method.

[0387] The evaluation results are summarized in Table 6 below.

[0388] [Table 6]

[0389] The results show that, compared with joints 71 to 72, joints 61 to 63 have significantly higher bonding energy.

[0390] (Example 81)

[0391] The joint was fabricated using the following method.

[0392] First, a 2-inch diameter substrate was prepared as both the first and second substrates. × A 3mm thick disc-shaped sapphire substrate.

[0393] Next, a SiO2 film was formed on the first surface (a surface with a diameter of 2 inches) of the first substrate using reactive sputtering. Using silicon metal as the target, the SiO2 film thickness was 10 nm. Conversely, a TiO2 film was formed on the first surface of the second substrate using reactive sputtering. Using titanium metal as the target, the TiO2 film thickness was 10 nm.

[0394] Next, the surface of the SiO2 film on the first substrate was subjected to NH3 plasma treatment. The conditions for NH3 plasma treatment were the same as in Example 1 above. However, the treatment time was set to 600 seconds.

[0395] On the other hand, atmospheric pressure water vapor plasma treatment was performed on the surface of the TiO2 film of the second substrate. The conditions for atmospheric pressure water vapor plasma treatment were the same as those in Example 24 above.

[0396] Next, the second substrate is disposed on the first substrate such that the SiO2 film of the first substrate overlaps with the TiO2 film of the second substrate. Then, in this state, the assembly is heated to bond the two together. The heating temperature is set to 200°C, and the heating time is set to 1 hour.

[0397] Thus, a joint (hereinafter referred to as "joint 81") was created.

[0398] (Example 82)

[0399] The bond was fabricated using the same method as in Example 81. However, in Example 82, a SnO2 film with a thickness of 10 nm was formed on the surface of the second substrate instead of the TiO2 film.

[0400] The other conditions are the same as in Example 81. Thus, a joint (hereinafter referred to as "joint 82") was produced.

[0401] (Example 91)

[0402] The bond was fabricated using the same method as in Example 81. However, in this Example 91, SPB treatment was performed on the surface of the SiO2 film of the first substrate and the surface of the TiO2 film of the second substrate. The conditions for the SPB treatment were the same as in Example 11 above.

[0403] Thus, the joint (hereinafter referred to as "joint 91") was created.

[0404] (Example 92)

[0405] The bond was fabricated using the same method as in Example 91. However, in Example 92, a SnO2 film with a thickness of 10 nm was formed on the surface of the second substrate instead of the TiO2 film.

[0406] Thus, the joint (hereinafter referred to as "joint 92") was produced.

[0407] The manufacturing conditions for each assembly are summarized in Table 7 below.

[0408] [Table 7]

[0409] (evaluate)

[0410] The joint strength was evaluated using joints 81 to 82 and joints 91 to 92.

[0411] The bonding strength was measured as follows.

[0412] First, each joint was cut into dimensions of 3mm in length × 3mm in width × 6mm in height, and cuboid-shaped specimens were obtained from each joint. When obtaining the specimens, the joints were cut along the central axis with the center of the first surface of the first substrate of the joint being the center of a 3mm × 3mm square.

[0413] Next, the obtained specimens were used to perform a bond strength test.

[0414] Figure 16 The structure of the measuring device used is shown schematically in the diagram.

[0415] like Figure 16 As shown, the measuring device 710 includes a vise 720 and a pressure head 730. The vise 720 has a height of approximately 3 mm. Additionally, the pressure head 730 has a contact area of ​​at least 4 mm × 4 mm and a total length of at least 5 mm. Figure 16 (the length in the vertical direction).

[0416] Before the measurement, the specimen X is placed between vises 720. The vises 720 have a height of approximately 3 mm, so the specimen X protrudes approximately 3 mm from the upper surface 725 of the vises 720. Furthermore, the specimen X has a first substrate portion Y and a second substrate portion Z. Therefore, the specimen X placed in the vises 720 is in a state where either the first substrate portion Y or the second substrate portion Z is not surrounded by the vises 720.

[0417] It should be noted that in this test, the sample X was placed in the vise 720 with the second substrate portion Z on the upper side.

[0418] Next, the indenter 730 is positioned near the sample X. The indenter 730 is set with its front end 735 in the height direction 0.1 mm from the upper surface 725 of the vise 720.

[0419] Next, the pressure head 730 is moved horizontally (in the direction of arrow F2). The moving speed is set to 0.2 mm / second. Through the movement of the pressure head 730, the contact area of ​​the pressure head 730 comes into contact with the second substrate portion Z of the sample X, applying pressure to the sample X.

[0420] The load (converted per unit area) at which specimen X breaks due to pressure from indenter 730 is determined and used as the bond strength (unit: kgf / mm²). 2 ).

[0421] The evaluation results are summarized in Table 8 below.

[0422] [Table 8]

[0423] It should be noted that in Example 91, during the processing of sample X, the first substrate portion Y and the second substrate portion Z had already been peeled off, making it impossible to conduct the test.

[0424] As shown in Table 8, joints 81 and 82 exhibit significantly higher bonding strength compared to joints 91 and 92.

[0425] It is evident that by subjecting at least one of the inorganic dielectric films of the first substrate and the second substrate to NH3 plasma treatment, the bonding strength of the resulting bond is improved.

[0426] (The method of the present invention)

[0427] The present invention can be implemented in the following ways.

[0428] (Method 1)

[0429] A joining member, wherein the joining member has: a substrate comprising an inorganic material, and a joined surface having a joining function with other components. (i) The surface to be joined is the first surface of the substrate, or (ii) The surface to be bonded is the surface of the inorganic dielectric film disposed on the first surface of the substrate. In the N1s energy spectrum of the bonded surface obtained by X-ray photoelectron spectroscopy analysis, when the maximum intensity in the range of 402.5 eV to 403.5 eV is defined as I1 and the maximum intensity in the range of 398.2 eV to 399.2 eV is defined as I2, the ratio I2 / I1 is greater than 1.5. In case (i), the nitrogen content of the joined surface is higher than that of the main body of the substrate. In the case of (ii), the inorganic dielectric film does not contain a nitrided film, and the nitrogen content of the bonded surface is higher than that of the outermost body portion of the inorganic dielectric film.

[0430] (Method 2)

[0431] According to the joining member of method 1, in case (i), the nitrogen content in the joined surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the substrate. In case (ii), the amount of nitrogen in the bonded surface is 0.1 atomic% or more higher than the amount of nitrogen in the outermost body portion.

[0432] (Method 3)

[0433] According to the bonding member of method 1 or 2, the substrate comprises inorganic crystals or glass containing SiO2.

[0434] (Method 4)

[0435] The joining component according to any one of methods 1 to 3, wherein the substrate comprises sapphire or glass containing SiO2.

[0436] (Method 5)

[0437] The joining member according to any one of methods 1 to 4, wherein the substrate is flat or lens-shaped.

[0438] (Method 6)

[0439] The joining member according to any one of methods 1 to 5, wherein the substrate is a machined member having at least one of a through hole, a groove, and a non-through recess.

[0440] (Method 7)

[0441] A joint is formed by directly bonding a first substrate and a second substrate, wherein... The first substrate comprises glass containing less than 90 mol% SiO2. The second substrate comprises inorganic materials. The joint has a bonding surface between the first substrate and the second substrate, and the nitrogen content in the bonding surface is higher than that in the main body of the first substrate and / or the second substrate. The joint has 1J / m 2 The above bonding energy, or having a bonding energy of 0.7 kgf / mm 2 The above bonding strength.

[0442] (Method 8)

[0443] According to the assembly of embodiment 7, the nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the first substrate and / or the second substrate.

[0444] (Method 9)

[0445] According to the assembly of method 7 or 8, at least one of the first substrate and the second substrate is flat or lens-shaped.

[0446] (Method 10)

[0447] According to any one of methods 7 to 9, the joint body is wherein at least one of the first substrate and the second substrate is a processed member having at least one of a through hole, a non-through recess, and a groove.

[0448] (Method 11)

[0449] The joint according to any one of methods 7 to 10, wherein the second substrate comprises an inorganic crystal or a glass containing SiO2.

[0450] (Method 12)

[0451] The joint according to any one of methods 7 to 11, wherein the second substrate comprises sapphire or glass containing less than 90 mol% SiO2.

[0452] (Method 13)

[0453] A light-emitting element, wherein the light-emitting element comprises a junction as described in any one of embodiments 7 to 11. The first substrate is a lens. The second substrate is a support substrate for supporting the semiconductor stack of the light-emitting element.

[0454] (Method 14)

[0455] According to the light-emitting element of method 13, phosphor particles are dispersed in the first substrate.

[0456] (Method 15)

[0457] A bonding body comprising a first substrate, a second substrate, and an inorganic dielectric film located between the first substrate and the second substrate, wherein, The first substrate and the second substrate contain inorganic materials. The inorganic dielectric membrane does not contain a nitride membrane. (i) The bonding body has a bonding surface at the interface between the first substrate and the inorganic dielectric film, the layer closest to the first substrate, or (ii) The bonding body has a bonding surface at the interface between the second substrate and the inorganic dielectric film at the layer closest to the second substrate, or (iii) The joint has a bonding surface in the inorganic dielectric film. In case (i), the nitrogen content in the bonding surface is higher than that in the main body of the first substrate and the main body of the layer of the inorganic dielectric film. In the case of (ii), the nitrogen content in the bonding surface is higher than that in the main body of the second substrate and the main body of the layer of the inorganic dielectric film. In the case of (iii), the bonding surface is not the interface between the SiO2 layers, but rather: (a) The bonding surface is the interface between adjacent layers in the inorganic dielectric film, and the nitrogen content in the bonding surface is higher than that in the main body of the adjacent layers of the inorganic dielectric film, or (b) The bonding surface is located inside the first layer constituting the inorganic dielectric film, and the nitrogen content in the bonding surface is higher than that in the main body of the first layer. The joint has a strength of 0.5 J / m 2 The above bonding energy, or having a bonding energy of 0.4 kgf / mm2 The above bonding strength.

[0458] (Method 16)

[0459] According to the assembly described in method 15, wherein... In case (i), the nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the first substrate and the main body portion of the layer closest to the first substrate. In the case of (ii), the nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the second substrate and the main body portion of the layer closest to the second substrate. In case (iii), the nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the adjacent layer, or the nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the first layer.

[0460] (Method 17)

[0461] According to the conjugate of method 15 or 16, the inorganic dielectric film comprises multiple layers. The material of the inorganic dielectric film layer closest to the surface of the first substrate is different from that of the inorganic dielectric film layer closest to the surface of the second substrate, or The inorganic dielectric film layer closest to the surface of the first substrate is made of the same material as the inorganic dielectric film layer closest to the surface of the second substrate.

[0462] (Method 18)

[0463] According to any one of methods 15 to 17, in the joint, at least one of the first substrate and the second substrate is flat or lens-shaped.

[0464] (Method 19)

[0465] According to any one of methods 15 to 18, in the joint body, at least one of the first substrate and the second substrate is a processed member having at least one of a through hole, a non-through recess, and a groove.

[0466] (Method 20)

[0467] The joint according to any one of methods 15 to 19, wherein the first substrate and the second substrate comprise inorganic crystals or glass containing SiO2.

[0468] (Method 21)

[0469] The joint according to any one of methods 15 to 20, wherein the first substrate and the second substrate comprise sapphire or glass containing SiO2.

[0470] (Method 22)

[0471] A light-emitting element, wherein the light-emitting element comprises a junction as described in any one of embodiments 15 to 21. The first substrate is a lens. The second substrate is a support substrate for supporting the semiconductor stack of the light-emitting element.

[0472] (Method 23)

[0473] According to the light-emitting element of method 22, phosphor particles are dispersed in the first substrate.

[0474] (Method 24)

[0475] A method for manufacturing a joint, comprising joining a first component and a second component to obtain the joint, wherein... The method for manufacturing the assembly includes the following steps: The step of plasmaizing the reactant gas; The step of irradiating the mating surface of at least one of the first and second components with the plasma-enhanced reactive gas; and The step of joining the first component and the second component via the joined surfaces. The reactant gas contains NH3. The surfaces to be joined contain inorganic materials.

[0476] (Method 25)

[0477] According to the manufacturing method of method 24, the steps of plasmaizing the reaction gas and irradiating the plasmaized reaction gas are performed at a pressure in the range of 101 kPa ± 50 kPa.

[0478] (Method 26)

[0479] According to the manufacturing method of method 24 or 25, the steps of plasmaizing the reactive gas and irradiating the plasmaized reactive gas are performed by dielectric barrier discharge.

[0480] (Method 27)

[0481] The manufacturing method according to any one of methods 24 to 26, wherein the reaction gas comprises Ar.

[0482] This application claims priority to Japanese Patent Application No. 2023-176591, filed on October 12, 2023, and Japanese Patent Application No. 2024-154893, filed on September 9, 2024, the entire contents of which are incorporated herein by reference.

[0483] Label Explanation

[0484] 100 Connecting components

[0485] 110, 110a, 110b substrates

[0486] 112, 112a, 112b First Surface

[0487] 114, 114a, 114b Second Surface

[0488] 130 through hole

[0489] 132 slots

[0490] 134 Non-through recess

[0491] 150, 150a, 150b are the mating surfaces.

[0492] 200 Connecting components

[0493] 210 Substrate

[0494] 212 First Surface

[0495] 214 Second Surface

[0496] 220 Inorganic dielectric membrane

[0497] 223 Outermost layer

[0498] 250 mating surfaces

[0499] 300, 300a, 300b First joint

[0500] 301 LED Components

[0501] 302 Glass plate with microflow path

[0502] 310, 310a, 310b First substrate

[0503] 312, 312a, 312b First surface of first substrate

[0504] 314, 314a, 314b Second surfaces of the first substrate

[0505] 330b Through Hole

[0506] 332b slot

[0507] 334b Non-through recess

[0508] 350, 350a, 350b mating surfaces

[0509] 360, 360a, 360b Second Substrate

[0510] 362, 362a, 362b First surfaces of the second substrate

[0511] 364, 364a, 364b Second surfaces of the second substrate

[0512] 368 Buffer Layer

[0513] 370 active area

[0514] 372 First Electrode

[0515] 374 Second Electrode

[0516] 375 carrier

[0517] 382b slot

[0518] 384b Non-through recess

[0519] Other feature structures of 386b and 388b

[0520] 400 Second joint

[0521] 410 First substrate

[0522] 412 First surface of the first substrate

[0523] 414 Second surface of the first substrate

[0524] 420 Inorganic dielectric membrane

[0525] 450A, 450B, 450C mating surfaces

[0526] 460 Second substrate

[0527] 462 First surface of the second substrate

[0528] 464 Second surface of the second substrate

[0529] Device 610

[0530] 612 Raw Metal Shearing Tester

[0531] 613 pressure head

[0532] 614 Base

[0533] 616 Adhesive

[0534] 710 Measuring Apparatus

[0535] 720 bench vise

[0536] 725 upper surface

[0537] 730 pressure head

[0538] 735 Frontend

[0539] A junction

[0540] B First substrate

[0541] C Second substrate

[0542] X sample

[0543] Y First substrate part

[0544] Z Second substrate part

Claims

1. A joining member, wherein, The joining component has: a substrate containing inorganic material, and a joined surface having the function of joining with other components. (i) The surface to be joined is the first surface of the substrate, or (ii) The surface to be bonded is the surface of an inorganic dielectric film disposed on the first surface of the substrate. In the N1s energy spectrum of the bonded surface obtained by X-ray photoelectron spectroscopy analysis, when the maximum intensity in the range of 402.5 eV to 403.5 eV is defined as I1 and the maximum intensity in the range of 398.2 eV to 399.2 eV is defined as I2, the ratio I2 / I1 is greater than 1.

5. In case (i), the nitrogen content of the joined surface is higher than that of the main body of the substrate. In the case of (ii), the inorganic dielectric film does not contain a nitrided film, and the nitrogen content of the bonded surface is higher than that of the outermost body portion of the inorganic dielectric film.

2. The joining member according to claim 1, wherein, In case (i), the nitrogen content in the bonded surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the substrate. In case (ii), the amount of nitrogen in the bonded surface is 0.1 atomic% or more higher than the amount of nitrogen in the outermost body portion.

3. The joining member according to claim 1, wherein, The substrate comprises inorganic crystals or glass containing SiO2.

4. The joining member according to claim 1, wherein, The substrate comprises sapphire or glass containing SiO2.

5. The joining member according to claim 1, wherein, The substrate is flat or lens-shaped.

6. The joining member according to claim 1, wherein, The substrate is a machined component having at least one of through holes, grooves, and non-through recesses.

7. A joint body, said joint body being formed by directly joining a first substrate and a second substrate, wherein, The first substrate comprises glass containing less than 90 mol% SiO2. The second substrate comprises inorganic materials. The joint has a bonding surface between the first substrate and the second substrate, and the nitrogen content in the bonding surface is higher than that in the main body of the first substrate and / or the second substrate. The joint has 1J / m 2 The above bonding energy, or having a bonding energy of 0.7 kgf / mm 2 The above bonding strength.

8. The joint according to claim 7, wherein, The nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body of the first substrate and / or the second substrate.

9. The joint according to claim 7, wherein, At least one of the first substrate and the second substrate is flat or lens-shaped.

10. The joint according to claim 7, wherein, At least one of the first substrate and the second substrate is a processed component having at least one of a through hole, a non-through recess, and a groove.

11. The joint according to claim 7, wherein, The second substrate comprises inorganic crystals or glass containing SiO2.

12. The joint according to claim 7, wherein, The second substrate comprises sapphire or glass containing less than 90 mol% SiO2.

13. A light-emitting element, wherein, The light-emitting element comprises the bonding body as described in claim 7. The first substrate is a lens. The second substrate is a support substrate for supporting the semiconductor stack of the light-emitting element.

14. The light-emitting element according to claim 13, wherein, Fluorescent particles are dispersed in the first substrate.

15. A bonding body having a first substrate, a second substrate, and an inorganic dielectric film located between the first substrate and the second substrate, wherein, The first substrate and the second substrate contain inorganic materials. The inorganic dielectric membrane does not contain a nitride membrane. (i) The bonding body has a bonding surface at the interface between the first substrate and the inorganic dielectric film at the layer closest to the first substrate, or (ii) The bonding body has a bonding surface at the interface between the second substrate and the inorganic dielectric film at the layer closest to the second substrate, or (iii) The junction has a bonding surface in the inorganic dielectric film. In case (i), the nitrogen content in the bonding surface is higher than that in the main body of the first substrate and the main body of the layer of the inorganic dielectric film. In the case of (ii), the nitrogen content in the bonding surface is higher than that in the main body of the second substrate and the main body of the layer of the inorganic dielectric film. In the case of (iii), the bonding surface is not the interface between the SiO2 layers, but rather: (a) The bonding surface is the interface between adjacent layers in the inorganic dielectric film, and the nitrogen content in the bonding surface is higher than that in the main body of the adjacent layers of the inorganic dielectric film, or (b) The bonding surface is located inside the first layer constituting the inorganic dielectric film, and the nitrogen content in the bonding surface is higher than that in the main body of the first layer. The joint has a strength of 0.5 J / m 2 The above bonding energy, or having a bonding strength of 0.4 kg / mm 2 The above bonding strength.

16. The joint according to claim 15, wherein, In case (i), the nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the first substrate and the main body portion of the layer closest to the first substrate. In the case of (ii), the nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the second substrate and the main body portion of the layer closest to the second substrate. In case (iii), the nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the adjacent layer, or the nitrogen content in the bonding surface is 0.1 atomic% or more higher than the nitrogen content in the main body portion of the first layer.

17. The joint according to claim 15, wherein, The inorganic dielectric membrane comprises multiple layers. The material of the inorganic dielectric film layer closest to the surface of the first substrate is different from that of the inorganic dielectric film layer closest to the surface of the second substrate, or The inorganic dielectric film layer closest to the surface of the first substrate is made of the same material as the inorganic dielectric film layer closest to the surface of the second substrate.

18. The joint according to claim 15, wherein, At least one of the first substrate and the second substrate is flat or lens-shaped.

19. The joint according to claim 15, wherein, At least one of the first substrate and the second substrate is a processed component having at least one of a through hole, a non-through recess, and a groove.

20. The joint according to claim 15, wherein, The first substrate and the second substrate comprise inorganic crystals or glass containing SiO2.

21. The joint according to claim 15, wherein, The first substrate and the second substrate comprise sapphire or glass containing SiO2.

22. A light-emitting element, wherein, The light-emitting element comprises the bonding body as described in claim 15. The first substrate is a lens. The second substrate is a support substrate for supporting the semiconductor stack of the light-emitting element.

23. The light-emitting element according to claim 22, wherein, Fluorescent particles are dispersed in the first substrate.

24. A method for manufacturing a joint, comprising a method for manufacturing a joint obtained by joining a first component and a second component, wherein, The method for manufacturing the assembly includes the following steps: The step of plasmaizing the reactant gas; The step of irradiating the already plasma-generated reactive gas onto the mating surface of at least one of the first and second components; and The step of joining the first component and the second component via the joined surfaces. The reactant gas contains NH3. The surfaces to be joined contain inorganic materials.

25. The manufacturing method according to claim 24, wherein, The steps of plasmaizing the reactive gas and irradiating the plasmaized reactive gas are performed at pressures in the range of 101 kPa ± 50 kPa.

26. The manufacturing method according to claim 24, wherein, The steps of plasmaizing the reactive gas and irradiating the plasmaized reactive gas are performed by dielectric barrier discharge.

27. The manufacturing method according to claim 24, wherein, The reactant gas contains Ar.

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