High-entropy carbide composite ceramic and method of making same
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUHAN UNIV OF SCI & TECH
- Filing Date
- 2026-03-09
- Publication Date
- 2026-05-29
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Figure CN122102713A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of ceramic processing technology, specifically to a high-entropy carbide composite ceramic and its preparation method. Background Technology
[0002] High-entropy carbides are high-performance ultra-high temperature ceramic materials. Due to their unique structure, including the high-entropy effect, they possess characteristics such as high melting point, good high-temperature stability, and high hardness, making them widely used in cutting-edge fields such as aerospace, high-end manufacturing, and energy. However, current synthesis methods generally suffer from drawbacks such as high synthesis temperatures and complex preparation processes, severely limiting the application prospects of high-entropy carbide ceramics.
[0003] Currently, the main methods for preparing high-entropy carbides include carbothermal reduction, mechanical alloying, self-propagating synthesis, and in-situ synthesis. For example, the patented technology "A method for preparing high-entropy carbides" (CN115340091A) involves preparing ultrafine high-entropy oxide powder from a metal-containing salt solution using a spray pyrolysis method. The obtained ultrafine high-entropy oxide powder is then placed in an organic solvent and spray-dried to granulate, resulting in a composite powder with the organic material encapsulating the oxide powder. This composite powder is then carbonized at high temperature to obtain the high-entropy carbide. This method has the advantage of low preparation cost, but the preparation process is complex, with a long reaction time, ranging from 6 to 8 hours, and a reaction temperature as high as 2000℃.
[0004] The patented technology, "A Novel High-Entropy Carbide Ceramics and Its Preparation Method" (CN119710415A), employs a mechanical alloying method to prepare a pre-sintering mixed powder. The mixed powder is then pre-pressed into a mold and sintered using a discharge plasma sintering process to obtain the novel high-entropy carbide ceramic material. The high-entropy carbide ceramics prepared by this method have the advantage of high fracture toughness, but suffer from disadvantages such as high sintering temperature (1500-1800℃) and uneven powder particle size.
[0005] The patented technology, "A Method for Preparing Dense High-Entropy Carbide Ceramics" (CN120794633A), involves mixing multiple carbides in a specific molar ratio, followed by dry or wet ball milling and blending. The uniformly mixed materials are then hot-pressed and sintered to obtain dense high-entropy carbide ceramics. The high-entropy carbide ceramics prepared by this method have advantages such as high density and high hardness. However, it also has disadvantages, including a complex preparation process and the requirement for the samples to be synthesized under high-temperature and high-pressure conditions at a sintering temperature of 1550℃ and a pressure of 50MPa.
[0006] The patented technology, "A High-Entropy Carbide Ceramic Powder, Its Preparation Method, and Its Application" (CN115286389B), involves mixing and grinding metal oxide powder and carbon powder to obtain a mixed powder. This mixed powder is then spread evenly on a graphite heating element, covered and fixed with carbon paper, and finally sintered in an electric field under a protective atmosphere to obtain the high-entropy carbide ceramic powder. The high-entropy carbide ceramic powder of this invention has advantages such as high purity and uniform distribution of metal elements; however, the preparation method is complex, and the powder particle size is not uniform.
[0007] Currently, high-entropy carbides prepared by the above methods generally suffer from technical defects such as complex preparation methods, long production cycles, uneven ceramic powder strength, and high preparation temperature requirements. Summary of the Invention
[0008] The purpose of this invention is to provide a high-entropy carbide composite ceramic and its preparation method, which has a low synthesis temperature and a simple preparation process. The high-entropy carbide prepared by this method has the characteristics of uniform particle size distribution and low crystallization temperature, and at the same time has excellent electromagnetic wave absorption performance and oxidation resistance, so as to solve the problems mentioned in the background art.
[0009] To solve the above-mentioned technical problems, the present invention provides the following technical solution: a method for preparing high-entropy carbide composite ceramics, comprising the following steps: Step 1: Mix hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide and boron powder evenly, and treat at high temperature under a protective atmosphere to obtain high-entropy boride ceramics; Step 2: Mix the high-entropy boride ceramic and SiBCN ceramic obtained in Step 1, ball mill them, and then transfer them to a protective atmosphere for heat treatment to obtain the high-entropy carbide composite ceramic.
[0010] In this embodiment of the application, in step 1, the molar ratio of the molecular formulas of hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide and boron powder is 0.2:0.2:0.2:0.2:0.2:2.
[0011] In this embodiment of the application, the high-temperature treatment parameters in step 1 are: heat treatment at 1100℃~1600℃ for 1~4 hours.
[0012] In this embodiment of the application, in step 2, the mass ratio of the high-entropy boride ceramic to the SiBCN ceramic is (1~200):100; the ball-to-material ratio during ball milling is 5:1, the ball milling time is 1~3h, and the ball milling speed is 150~200r / min.
[0013] In this embodiment of the application, in step 2, the heat treatment parameters are: gradually increase the temperature from 20~25℃ to 800℃~1600℃, hold for 2~4 hours, and then let it cool naturally to 20~25℃ with the furnace.
[0014] In the embodiments of this application, the protective atmosphere in the above steps is the inert gas argon.
[0015] In this embodiment of the application, the particle size of hafnium oxide is 0.1-0.5 μm, the particle size of tantalum oxide is 0.1-0.5 μm, the particle size of niobium oxide is 0.1-0.5 μm, the particle size of molybdenum oxide is 0.1-0.5 μm, the particle size of titanium oxide is 0.1-0.5 μm, the particle size of boron powder is 100-200 nm, and the particle size of SiBCN ceramic is 0.5-1 μm.
[0016] In this embodiment of the application, a high-entropy carbide composite ceramic is prepared according to the preparation method of a high-entropy carbide composite ceramic described above.
[0017] Compared with the prior art, the beneficial effects achieved by the present invention are: 1. In step 2 of this invention, SiBCN ceramic is introduced into the high-entropy ceramic lattice distortion sites under high-temperature conditions, gradually replacing the boron element and bonding with the metal to complete the carbonization transformation reaction, thus realizing the preparation process of high-entropy carbides. The high-entropy carbides prepared by this method through carbonization transformation have the advantages of low sintering temperature and short production cycle.
[0018] 2. This invention obtains high-entropy carbide ceramics by directly ball milling and blending high-entropy boride ceramics with SiBCN ceramics, followed by heat treatment. This method has the advantages of simple preparation and low production cost.
[0019] Therefore, the method described in this invention has the characteristics of low synthesis temperature, simple preparation method and short production cycle, and the high-entropy carbide composite ceramics prepared have the characteristics of uniform particle size distribution and low crystallization temperature. Attached Figure Description
[0020] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used in conjunction with embodiments of the invention to explain the invention and do not constitute a limitation thereof. In the drawings: Figure 1 This is a SEM image of the high-entropy carbide composite ceramic prepared in Example 1 of the present invention; Figure 2 The XRD patterns are of the high-entropy carbide composite ceramics prepared in Examples 1-3 of this invention. Figure 3 The image shows the reflection loss of the high-entropy carbide composite ceramics prepared in Examples 1-3 of this invention. Detailed Implementation
[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0022] In this embodiment, it should be noted that there are no special restrictions on the manufacturers of the raw materials involved in this invention. Exemplary examples include: the hafnium oxide has a particle size of 0.1-0.5 μm, the tantalum oxide has a particle size of 0.1-0.5 μm, the niobium oxide has a particle size of 0.1-0.5 μm, the molybdenum oxide has a particle size of 0.1-0.5 μm, the titanium oxide has a particle size of 0.1-0.5 μm, the boron powder has a particle size of 100-200 nm, and the SiBCN ceramic has a particle size of 0.5-1 μm; the solvent purity is analytical grade.
[0023] Example 1: A method for preparing a high-entropy carbide composite ceramic, comprising the following steps: Step 1: Hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder are mixed evenly and placed under a protective atmosphere at 1350℃ for 2 hours to obtain (Hf, Ta, Nb, Mo, Ti)B2 high-entropy boride ceramics; in Step 1, the molar ratio of the molecular formulas of hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder is 0.2:0.2:0.2:0.2:0.2:2; the protective atmosphere is inert argon gas.
[0024] Step 2: Mix the high-entropy boride ceramic and SiBCN ceramic obtained in Step 1, ball mill them, and then transfer them to a protective atmosphere for heat treatment to obtain the high-entropy carbide composite ceramic with an average particle size of 0.2 μm.
[0025] In step 2, the mass ratio of the high-entropy boride ceramic to the SiBCN ceramic is 5:100; the ball-to-material ratio during ball milling is 5:1, the milling time is 2 hours, and the rotation speed is 180 r / min. The heat treatment parameters are: gradually increasing the temperature from 25℃ to 1400℃, holding at that temperature for 2 hours, and then naturally cooling to 25℃ in the furnace. The protective atmosphere is inert argon gas.
[0026] Example 2: A method for preparing a high-entropy carbide composite ceramic, comprising the following steps: Step 1: Hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder are mixed evenly and placed under a protective atmosphere at 1350℃ for 2 hours to obtain (Hf, Ta, Nb, Mo, Ti)B2 high-entropy boride ceramics; in Step 1, the molar ratio of the molecular formulas of hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder is 0.2:0.2:0.2:0.2:0.2:2; the protective atmosphere is inert argon gas.
[0027] Step 2: Mix the high-entropy boride ceramic and SiBCN ceramic obtained in Step 1, ball mill them, and then transfer them to a protective atmosphere for heat treatment to obtain the high-entropy carbide composite ceramic with an average particle size of 0.26 μm.
[0028] In step 2, the mass ratio of the high-entropy boride ceramic to the SiBCN ceramic is 10:100; the ball-to-material ratio during ball milling is 5:1. The ball milling time is 2 hours, and the rotation speed is 180 r / min. The heat treatment parameters are: gradually increasing the temperature from 25℃ to 1400℃, holding at that temperature for 2 hours, and then naturally cooling to 25℃ in the furnace. The protective atmosphere is inert argon gas.
[0029] Example 3: A method for preparing a high-entropy carbide composite ceramic, comprising the following steps: Step 1: Hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder are mixed evenly and placed under a protective atmosphere at 1350℃ for 2 hours to obtain (Hf, Ta, Nb, Mo, Ti)B2 high-entropy boride ceramics; in Step 1, the molar ratio of the molecular formulas of hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder is 0.2:0.2:0.2:0.2:0.2:2; the protective atmosphere is inert argon gas.
[0030] Step 2: Mix the high-entropy boride ceramic and SiBCN ceramic obtained in Step 1, ball mill them, and then transfer them to a protective atmosphere for heat treatment to obtain the high-entropy carbide composite ceramic with an average particle size of 0.3 μm.
[0031] In step 2, the mass ratio of the high-entropy boride ceramic to the SiBCN ceramic is 15:100; the ball-to-material ratio during ball milling is 5:1. The ball milling time is 2 hours, and the rotation speed is 180 r / min. The heat treatment parameters are: gradually increasing the temperature from 25℃ to 1400℃, holding at that temperature for 2 hours, and then naturally cooling to 25℃ in the furnace. The protective atmosphere is inert argon gas.
[0032] Example 4: A method for preparing a high-entropy carbide composite ceramic, comprising the following steps: Step 1: Hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder are mixed evenly and placed under a protective atmosphere at 1350℃ for 2 hours to obtain (Hf, Ta, Nb, Mo, Ti)B2 high-entropy boride ceramics; in Step 1, the molar ratio of the molecular formulas of hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder is 0.2:0.2:0.2:0.2:0.2:2; the protective atmosphere is inert argon gas.
[0033] Step 2: Mix the high-entropy boride ceramic and SiBCN ceramic obtained in Step 1, ball mill them, and then transfer them to a protective atmosphere for heat treatment to obtain the high-entropy carbide composite ceramic with an average particle size of 0.24 μm.
[0034] In step 2, the mass ratio of the high-entropy boride ceramic to the SiBCN ceramic is 30:100; the ball-to-material ratio during ball milling is 5:1. The ball milling time is 2 hours, and the rotation speed is 180 r / min. The heat treatment parameters are: gradually increasing the temperature from 25℃ to 1400℃, holding at that temperature for 2 hours, and then naturally cooling to 25℃ in the furnace. The protective atmosphere is inert argon gas.
[0035] Example 5: A method for preparing a high-entropy carbide composite ceramic, comprising the following steps: Step 1: Hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder are mixed evenly and placed under a protective atmosphere at 1350℃ for 2 hours to obtain (Hf, Ta, Nb, Mo, Ti)B2 high-entropy boride ceramics; in Step 1, the molar ratio of the molecular formulas of hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder is 0.2:0.2:0.2:0.2:0.2:2; the protective atmosphere is inert argon gas.
[0036] Step 2: Mix the high-entropy boride ceramic and SiBCN ceramic obtained in Step 1, ball mill them, and then transfer them to a protective atmosphere for heat treatment to obtain the high-entropy carbide composite ceramic.
[0037] In step 2, the mass ratio of the high-entropy boride ceramic to the SiBCN ceramic is 50:100; the ball-to-material ratio during ball milling is 5:1. The ball milling time is 2 hours, and the rotation speed is 180 r / min. The heat treatment parameters are: gradually increasing the temperature from 25℃ to 1400℃, holding at that temperature for 2 hours, and then naturally cooling to 25℃ in the furnace. The protective atmosphere is inert argon gas.
[0038] Example 6: A method for preparing a high-entropy carbide composite ceramic, comprising the following steps: Step 1: Hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder are mixed evenly and placed under a protective atmosphere at 1350℃ for 2 hours to obtain (Hf, Ta, Nb, Mo, Ti)B2 high-entropy boride ceramics; in Step 1, the molar ratio of the molecular formulas of hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder is 0.2:0.2:0.2:0.2:0.2:2; the protective atmosphere is inert argon gas.
[0039] Step 2: Mix the high-entropy boride ceramic and SiBCN ceramic obtained in Step 1, ball mill them, and then transfer them to a protective atmosphere for heat treatment to obtain the high-entropy carbide composite ceramic.
[0040] In step 2, the mass ratio of the high-entropy boride ceramic to the SiBCN ceramic is 100:100; the ball-to-material ratio during ball milling is 5:1. The ball milling time is 2 hours, and the rotation speed is 180 r / min. The heat treatment parameters are: gradually increasing the temperature from 25℃ to 1400℃, holding at that temperature for 2 hours, and then naturally cooling to 25℃ in the furnace. The protective atmosphere is inert argon gas.
[0041] Example 7: A method for preparing a high-entropy carbide composite ceramic, comprising the following steps: Step 1: Hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder are mixed evenly and placed under a protective atmosphere at 1350℃ for 2 hours to obtain (Hf, Ta, Nb, Mo, Ti)B2 high-entropy boride ceramics; in Step 1, the molar ratio of the molecular formulas of hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide, and boron powder is 0.2:0.2:0.2:0.2:0.2:2; the protective atmosphere is inert argon gas.
[0042] Step 2: Mix the high-entropy boride ceramic and SiBCN ceramic obtained in Step 1, ball mill them, and then transfer them to a protective atmosphere for heat treatment to obtain the high-entropy carbide composite ceramic.
[0043] In step 2, the mass ratio of the high-entropy boride ceramic to the SiBCN ceramic is 200:100; the ball-to-material ratio during ball milling is 5:1. The ball milling time is 2 hours, and the rotation speed is 180 r / min. The heat treatment parameters are: gradually increasing the temperature from 25℃ to 1400℃, holding at that temperature for 2 hours, and then naturally cooling to 25℃ in the furnace. The protective atmosphere is inert argon gas.
[0044] Example 8: A method for preparing high-entropy carbide composite ceramics. Except for the heat treatment temperature in step 2, this method is the same as Example 3. The heat treatment parameters were as follows: gradually increase the temperature from 25℃ to 800℃, hold for 2 hours, and then allow the furnace to cool naturally to 25℃. The protective atmosphere was inert argon gas.
[0045] Example 9: A method for preparing high-entropy carbide composite ceramics. Except for the heat treatment temperature in step 2, this method is the same as Example 3. The heat treatment parameters were as follows: gradually increase the temperature from 25℃ to 900℃, hold for 2 hours, and then allow the furnace to cool naturally to 25℃. The protective atmosphere was inert argon gas.
[0046] Example 10: A method for preparing high-entropy carbide composite ceramics. Except for the heat treatment temperature in step 2, this method is the same as Example 3. The heat treatment parameters were as follows: gradually increase the temperature from 25℃ to 1000℃, hold for 2 hours, and then allow the furnace to cool naturally back to 25℃. The protective atmosphere was inert argon gas.
[0047] Example 11: A method for preparing high-entropy carbide composite ceramics. Except for the heat treatment temperature in step 2, this method is the same as Example 3. The heat treatment parameters were as follows: gradually increase the temperature from 25℃ to 1100℃, hold for 2 hours, and then allow the furnace to cool naturally back to 25℃. The protective atmosphere was inert argon gas.
[0048] Example 12: A method for preparing high-entropy carbide composite ceramics. Except for the heat treatment temperature in step 2, this method is the same as Example 3. The heat treatment parameters were as follows: gradually increase the temperature from 25℃ to 1200℃, hold for 2 hours, and then allow the furnace to cool naturally to 25℃. The protective atmosphere was inert argon gas.
[0049] Example 13: A method for preparing high-entropy carbide composite ceramics. Except for the heat treatment temperature in step 2, this method is the same as Example 3. The heat treatment parameters were as follows: gradually increase the temperature from 25℃ to 1300℃, hold for 2 hours, and then allow the furnace to cool naturally to 25℃. The protective atmosphere was inert argon gas.
[0050] Example 14: A method for preparing high-entropy carbide composite ceramics. Except for the heat treatment temperature in step 2, this method is the same as Example 3. The heat treatment parameters were as follows: gradually increase the temperature from 25℃ to 1500℃, hold for 2 hours, and then allow the furnace to cool naturally to 25℃. The protective atmosphere was inert argon gas.
[0051] Example 15: A method for preparing high-entropy carbide composite ceramics. Except for the heat treatment temperature in step 2, this method is the same as Example 3. The heat treatment parameters were as follows: gradually increase the temperature from 25℃ to 1600℃, hold for 2 hours, and then allow the furnace to cool naturally to 25℃. The protective atmosphere was inert argon gas.
[0052] Example 16: A method for preparing a high-entropy carbide composite ceramic. Except for the high-temperature treatment in step 1, this method is identical to Example 3. The high-temperature treatment parameters were: 1100℃ for 4 hours. The protective atmosphere was inert argon.
[0053] Example 17: A method for preparing a high-entropy carbide composite ceramic. Except for the high-temperature treatment in step 1, this method is identical to Example 3. The high-temperature treatment parameters were: heat treatment at 1600℃ for 1 hour. The protective atmosphere was inert argon gas.
[0054] Testing experiment: The high-entropy carbide composite ceramics prepared in Examples 1-17 were used, and their corresponding SEM images, XRD patterns, and reflection loss diagrams were recorded. The results are as follows: Figures 1-3 As shown, the high-entropy carbide composite ceramics prepared according to the methods disclosed in Examples 1-3 of this application have excellent electromagnetic wave absorption properties.
[0055] Electromagnetic wave absorption performance test method: The electromagnetic parameters of the sample are characterized at room temperature using the coaxial transmission line method. In the frequency range of 2-18 GHz, ceramic powder and paraffin are mixed at a mass ratio of 3:7 and pressed into a coaxial ring with an outer diameter of 7.00 mm, an inner diameter of 3.00 mm, and a thickness of 2.5-3.5 mm. The reflection loss of the material is calculated by formula.
[0056] Conclusion: 1. In step 2 of this invention, SiBCN ceramic enters the high-entropy ceramic lattice distortion sites under high-temperature conditions, gradually replacing the B element and bonding with the metal to complete the carbonization transformation reaction, thus realizing the preparation process of high-entropy carbides. The high-entropy carbides prepared by this method through carbonization transformation have the advantages of low sintering temperature and short production cycle.
[0057] 2. This invention obtains high-entropy carbide ceramics by directly ball milling and blending high-entropy boride ceramics with SiBCN ceramics, followed by heat treatment. This method has the advantages of simple preparation and low production cost.
[0058] Therefore, the method described in this invention has the characteristics of low synthesis temperature, simple preparation method and short production cycle, and the high-entropy carbide composite ceramics prepared have the characteristics of uniform particle size distribution and low crystallization temperature. It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.
[0059] Finally, it should be noted that the above descriptions are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A method for preparing high-entropy carbide composite ceramics, characterized in that: Includes the following steps: Step 1: Mix hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide and boron powder evenly, and treat at high temperature under a protective atmosphere to obtain high-entropy boride ceramics; Step 2: Mix the high-entropy boride ceramic and SiBCN ceramic obtained in Step 1, ball mill them, and then transfer them to a protective atmosphere for heat treatment to obtain the high-entropy carbide composite ceramic.
2. The method for preparing a high-entropy carbide composite ceramic according to claim 1, characterized in that: In step 1, the molar ratio of the molecular formulas of hafnium oxide, tantalum oxide, niobium oxide, molybdenum oxide, titanium oxide and boron powder is 0.2:0.2:0.2:0.2:0.2:
2.
3. The method for preparing a high-entropy carbide composite ceramic according to claim 1, characterized in that: In step 1, the high-temperature treatment parameters are: heat treatment at 1100℃~1600℃ for 1~4 hours.
4. The method for preparing a high-entropy carbide composite ceramic according to claim 1, characterized in that: In step 2, the mass ratio of the high-entropy boride ceramic to the SiBCN ceramic is (1~200):
100.
5. The method for preparing a high-entropy carbide composite ceramic according to claim 1, characterized in that: In step 2, the ball-to-material ratio during ball milling is 5:1, the ball milling time is 1~3 hours, and the ball milling speed is 150~200 r / min.
6. The method for preparing a high-entropy carbide composite ceramic according to claim 1, characterized in that: In step 2, the heat treatment parameters are: gradually increase the temperature from 20~25℃ to 800℃~1600℃, hold for 2~4 hours, and then let it cool naturally to 20~25℃ in the furnace.
7. The method for preparing a high-entropy carbide composite ceramic according to claim 1, characterized in that: In the above steps, the protective atmosphere is the inert gas argon.
8. The method for preparing a high-entropy carbide composite ceramic according to claim 1, characterized in that: The hafnium oxide has a particle size of 0.1-0.5 μm, the tantalum oxide has a particle size of 0.1-0.5 μm, the niobium oxide has a particle size of 0.1-0.5 μm, the molybdenum oxide has a particle size of 0.1-0.5 μm, the titanium oxide has a particle size of 0.1-0.5 μm, the boron powder has a particle size of 100-200 nm, and the SiBCN ceramic has a particle size of 0.5-1 μm.
9. The high-entropy carbide composite ceramic prepared by the preparation method of any one of claims 1 to 8.