Display panel, method for manufacturing display panel, and display device

By setting a flat first insulating layer and optimizing the thin-film transistor structure in the OLED display panel, the problems of insufficient electrical performance and display uniformity in the prior art are solved, achieving better electrical performance and display uniformity, and improving the display effect.

CN122180257APending Publication Date: 2026-06-09YUNGU GUAN TECH CO LTD
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Patent Information

Application Number
CN202610136358.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-01-30
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

The performance of existing OLED display panel manufacturing processes needs to be improved, especially in terms of the electrical performance of thin-film transistors and display uniformity.

Method used

By setting a first insulating layer in the display panel, making its surface away from the substrate have a flat surface roughness of less than or equal to 0.5 nm, and forming an inorganic layer using an atomic layer deposition method, the interface flatness and film thickness uniformity of the thin film transistor are improved. Combined with the design of the thin film transistor with bottom gate and top gate structures, the electrical performance of the thin film transistor is optimized.

Benefits of technology

It improves the electrical performance and large-area electrical uniformity of thin-film transistors, reduces the difference in threshold voltage of thin-film transistors in different areas, enhances the display uniformity and grayscale expansion characteristics of the display panel, and avoids image blurring or distortion caused by insufficient brightness.

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Abstract

Embodiments of the present application provide a display panel, a manufacturing method of the display panel and a display device, and relate to the technical field of display. The display panel comprises a substrate, a first insulating layer located on one side of the substrate and comprising a first surface located away from the substrate, a first thin film transistor comprising a bottom gate located on the side of the first insulating layer close to the substrate and a first semiconductor part located on the side of the first insulating layer away from the substrate, and a light emitting device, wherein the first thin film transistor is used to provide driving current to the light emitting device to drive the light emitting device to emit light. The first surface of the first insulating layer is a flat surface, thereby improving the display uniformity of the display panel.
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