A method of removing van der waals interfacial contaminants

Abstract

The application discloses a method for removing van der Waals interface pollutants, comprising: arranging the interface material to be treated in an electrode device; controlling the voltage source to perform pressure treatment, so that the output voltage of the voltage source applied to the interface material to be treated is gradually increased; generating a current-voltage curve based on voltage data and current data, determining a voltage jump threshold according to the current-voltage curve; monitoring whether the current-voltage curve after the voltage jump threshold is linearly changed to determine whether the pollutants are peeled off, and collecting and cleaning the peeled-off pollutants. The application applies an electric field by an electrode, uses the electric field effect to make the pollutants separate from the interface, thereby realizing the removal of van der Waals interface pollutants, and has better removal effect on different types of pollutants and good applicability. Since the cleaning does not depend on chemical reagents, the loss of the device itself is reduced, the adverse effects of chemical residue discharge on the environment are avoided, and the application has better environmental protection effect.

Description

Technical Field

[0001] This invention relates to the field of materials processing technology, and in particular to a method for removing van der Waals interface contaminants. Background Technology

[0002] In numerous industries, including microelectronics, optics, fine chemicals, aerospace, and new materials, the cleanliness of surfaces and interfaces has a crucial impact on product performance and quality. This is especially true in the emerging field of van der Waals devices. As device fabrication moves towards the micro- and nanoscale, contaminants adsorbed by weak interactions such as van der Waals forces have become major sources of pollution, posing challenges to high-precision and high-reliability production. A van der Waals interface refers to the interface formed between two or more atomically thin materials (such as two-dimensional materials) connected by van der Waals forces (a type of weak intermolecular force). These interfaces are particularly important in two-dimensional heterostructures because their unique physical properties (such as electronic, optical, tribological, and thermal transport characteristics) can be modulated through interlayer stacking methods (such as twist angles and lattice mismatches) to achieve novel physical properties.

[0003] Van der Waals interface contaminants originate from a wide range of sources, primarily suspended particles in the environment or atmosphere, dust or particulates from production and processing, chemical treatment or reaction residues, particles generated by material or device wear, introduction from external operations or contact, and dust or debris during packaging and storage. Micro- and nano-scale particles have a large surface area relative to their volume, and weak interactions such as van der Waals forces and capillary forces dominate at this scale, making particles readily adhere to material surfaces. Some contaminant components possess strong polarity or affinity (such as organic binders and oxides), causing them to exhibit "electrostatic adsorption" or chemical bonding on the surface, further enhancing adhesion strength. These interface contaminants have extremely significant negative impacts on device performance, such as reducing bonding strength, leading to interface failure; affecting product performance and reliability; increasing scrap rates and production costs; and hindering subsequent functional expansion or process integration.

[0004] Therefore, removing or preventing interface contaminants is crucial for all industries using van der Waals technology (especially semiconductors, optoelectronics, aerospace composites, and biomedical devices). Only by ensuring a high degree of cleanliness and stability at the interface can the desired product quality and reliability be achieved, while effectively reducing production costs and potential risks.

[0005] Since "interface removal" is often impractical after materials have bonded together, industrial production typically involves rigorous cleaning or surface pretreatment "before interface formation" to minimize contaminant entry into the interface—a process known as "surface removal." Common surface removal methods, based on research from both academia and industry, include ultra-clean environments and cleanroom control, annealing, surface plasma treatment, UV / O3 (ultraviolet-ozone) or laser pretreatment, etc. However, these surface removal methods cannot completely eliminate surface contaminants, and some cause irreversible damage to the surface. Especially after interface formation, the presence of interface contaminants is unavoidable due to residual surface contaminants, atmospheric adsorbates, and organic residues from the transfer process. Currently, there is no suitable removal method for this significant negative impact on the performance of van der Waals devices. Therefore, there is an urgent need for an efficient and universal method for removing van der Waals interface contaminants. Summary of the Invention

[0006] In view of the above problems, the present invention is proposed to provide a method for removing van der Waals interface contaminants that overcomes or at least partially solves the above problems.

[0007] Other features and advantages of the invention will become apparent from the following detailed description, or may be learned in part by practice of the invention.

[0008] This invention provides a method for removing van der Waals interface contaminants, comprising the following steps: The interface material to be treated is placed in the electrode device. The interface material to be treated is a van der Waals device interface material including at least two interfaces. The electrode device includes at least two electrodes and a voltage source. The two electrodes connected to the voltage source are respectively attached to the outside of the interface of the interface material to be treated, so that the voltage source, the two electrodes and the interface material to be treated form a circuit. The voltage source is controlled to apply pressure, so that the output voltage applied by the voltage source to the interface material to be processed is gradually increased, and voltage data and current data on the interface material to be processed are collected simultaneously. A current-voltage curve is generated based on the voltage and current data, and the voltage jump threshold is determined based on the current-voltage curve. The current-voltage curve after the voltage jump threshold is monitored to determine whether the contaminant has been stripped. After confirming that the contaminant has been stripped, the voltage source is turned off, and the stripped contaminant is collected and cleaned.

[0009] In some embodiments of the present invention, the two interfaces of the van der Waals device interface material are graphite / graphite, graphite / molybdenum disulfide, or graphite / disulfide, respectively.

[0010] In some embodiments of the present invention, the pollutants are micro / nano particles, organic pollutants, or inorganic pollutants. The organic pollutants include organic carbon pollutants or biological / organic films, and the inorganic pollutants include inorganic salts / ionic pollutants or oxide layers / oxides.

[0011] In some embodiments of the present invention, the method further includes: pre-determining the stripping efficiency of various types of contaminants under different temperature environments through experiments to obtain corresponding temperature thresholds; determining the type of contaminant in the current interface material to be treated; controlling the ambient temperature according to the type of contaminant; adjusting the current ambient temperature to the corresponding temperature threshold of the contaminant for pressurization treatment to strip the contaminant from the interface material to be treated.

[0012] In some embodiments of the present invention, after collecting and cleaning the stripped contaminants, the method further includes: Determine the type of contaminant in the current interface material to be processed, perform contaminant residue detection based on the type of contaminant, and verify whether the removal of the contaminant meets the preset requirements.

[0013] In some embodiments of the present invention, the step of detecting pollutant residues according to the type of pollutant includes: When the pollutant is an organic carbon pollutant, the pollutant residue is detected by contact angle, XPS, Fourier transform infrared / Raman, surface conductivity / surface resistance and / or optical microscopy / spectral reflectance. When the type of contaminant is a biological / organic film, the contaminant residue is detected by fluorescence staining imaging, ATP measurement, culture method or bioburden measurement and / or surface contact angle / spectral detection. When the type of pollutant is inorganic salt / ionic pollutant, the pollutant residue is detected by means of resistance / conductivity measurement, ion chromatography or surface wiping liquid ion analysis, EIS and / or SEM / EDS detection. When the type of contaminant is an oxide layer / oxide, the contaminant residue is detected by XPS, optical reflection and / or AFM / STM detection methods; When the pollutant is micro or nanoparticle, the pollutant residue is detected by optical microscopy counting, SEM, particle counting, and / or surface roughness Ra / particle coverage statistics.

[0014] In some embodiments of the present invention, when the voltage source performs the voltage application process, the voltage is applied in a gradual increase manner or in a pulsed manner.

[0015] In some embodiments of the present invention, the electrode structure in the electrode device is a parallel plate electrode, a ring electrode, or a multi-electrode array structure.

[0016] In some embodiments of the present invention, the pollutants are collected and cleaned by means of electrode adsorption, electrostatic adsorption, or vacuum extraction.

[0017] In some embodiments of the present invention, the electrode device is further configured with an electrode protection element connected to the electrode, the electrode protection element including a current-limiting resistor, a TVS, or a soft-start circuit.

[0018] The technical solutions provided in the embodiments of the present invention have at least the following technical effects or advantages: The van der Waals interface contaminant removal method described in this invention removes contaminants by applying an electric field through electrodes at the interface of the van der Waals interface material, thereby detaching the contaminants from the interface using the electric field effect. Based on the current-voltage curve changes with and after contaminant removal, the removal result can be quickly confirmed. Compared to existing technologies, this method has better removal effects for different types of contaminants and is highly applicable. Furthermore, since the voltage at the electrodes is controllable, the degree of contaminant removal can be accurately determined by monitoring current changes, improving the reliability of the contaminant removal process. Because the cleaning does not rely on chemical reagents, it reduces wear and tear on the device itself and avoids the adverse environmental impact of chemical residue emissions, resulting in better environmental protection. The equipment used for the cleaning process is all conventional, with a simple structure, low cost, and easy disassembly and maintenance.

[0019] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and in order to make the above and other objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention are described below. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 A schematic flowchart illustrating a method for removing van der Waals interface contaminants provided in an embodiment of the present invention; Figure 2 This is a structural reference diagram of the interface material between the two electrodes and the material to be treated. Figure 3 This is a reference schematic diagram of the current-voltage curve; Figure 4 This is a reference schematic diagram showing the process before and after contaminant stripping in an embodiment of the present invention. Detailed Implementation

[0022] Exemplary embodiments of this application will now be described in more detail with reference to the accompanying drawings.

[0023] The accompanying drawings illustrate various structural schematics according to embodiments of this application. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.

[0024] It should be noted that the terms "first," "second," etc., used in this application can be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from the second element. The terms "comprising" and "having," and any variations thereof, used in this application, are intended to cover non-exclusive inclusion. The term "multiple" used in this application refers to two or more. In the context of this application, similar or identical parts may be represented by the same or similar reference numerals.

[0025] To better understand the above technical solutions, the following will describe the above technical solutions in detail with reference to specific implementation methods. It should be understood that the embodiments of this application and the specific features in the embodiments are detailed descriptions of the technical solutions of the present invention, rather than limitations on the technical solutions of the present invention. In the absence of conflict, the embodiments of the present invention and the technical features in the embodiments can be combined with each other.

[0026] Figure 1 This is a schematic flowchart of a method for removing van der Waals interface contaminants provided in an embodiment of the present invention, as shown below. Figure 1 As shown, the method for removing van der Waals interface contaminants includes the following steps: S1. The interface material to be processed is placed in the electrode device. The interface material to be processed is a van der Waals device interface material including at least two interfaces. The electrode device includes at least two electrodes and a voltage source. The two electrodes connected to the voltage source are respectively attached to the outside of the interface of the interface material to be processed, so that the voltage source, the two electrodes and the interface material to be processed form a circuit. In this embodiment of the invention, the van der Waals device interface material is a semiconductor material, ceramic material, metallic material, polymer material, or composite material. For example, the two interfaces of the van der Waals device interface material are graphite / graphite, graphite / molybdenum disulfide, or graphite / disulfide, respectively. The van der Waals device interface material includes two interfaces, namely, the two interfaces are graphite / graphite, graphite / molybdenum disulfide, or graphite / disulfide, respectively.

[0027] See Figure 2 The diagram shown is a structural reference diagram of the two electrodes and the interface material to be treated. Figure 2 In this context, Tip represents the positive electrode line, the electrode material is, for example, platinum (Pt), the van der Waals device interface material is, for example, graphite, and the region between the two graphite layers is the contaminant.

[0028] The electrode device may also be configured with an electrode protection element connected to the electrode. The electrode protection element includes a current-limiting resistor, a TVS (Transient Voltage Suppressor diode), or a soft-start circuit to prevent arc / discharge damage to the interface of the material to be treated.

[0029] The electrode device employs parallel plate electrodes, ring electrodes, or multi-electrode arrays to adapt to different interface morphologies and material types. The parallel plate electrodes are suitable for sheet-like / planar samples. Correspondingly, the connection structure includes an upper electrode (transparent or metal mesh / grid), the interface material to be treated (e.g., bonded to a substrate), and a lower electrode (conductive substrate or metal foil), all secured with insulating washers / insulating supports. The distance between the electrodes and the interface material can be adjusted via a fine-tuning screw (range 0.01–1 mm). The upper and lower electrodes are connected to an external high-voltage / low-noise power supply. Each electrode can be connected in parallel with a decoupling capacitor and a protection resistor (indicating 100 nF decoupling and 10 kΩ series current limiting), and a voltage sampling point (for closed-loop control) can be connected in parallel at the power output. The ring electrode and grounded substrate are suitable for localized cleaning. Correspondingly, the connection structure includes a center point electrode or concentric ring electrodes positioned above the interface material, with a grounded conductive base plate (or a reference electrode) below the interface material. The ring / point electrodes are used to create a strong local electric field (spacing 10–500 mm). (μm adjustable), a current sensing resistor (e.g., a 1 kΩ sampling resistor) can be set on the electrode to measure the current flowing through the electrode.

[0030] S2. Control the voltage source to apply pressure, so that the output voltage applied by the voltage source to the interface material to be processed increases step by step, and simultaneously collect voltage data and current data on the interface material to be processed. The voltage source is, for example, a high-precision voltage source with a resolution ≤ 1 mV and current limiting protection (configurable from 0.1 μA to 10 mA). The upper limit of the voltage source can be determined according to the interface material to be processed and safety requirements (example: 0–100V).

[0031] When the voltage source applies pressure, the voltage is applied gradually or in a pulsed manner.

[0032] The voltage and current data can be acquired using corresponding detection instruments (such as voltmeters, ammeters, etc.). The acquisition frequency of the voltage and current data is 1 Hz–1 kHz (low frequency can be used for step / slow boost, and high frequency can be used for sudden change detection). In other embodiments of the present invention, the current data can be acquired by connecting an external high-sensitivity current amplifier / compensation amplifier, with a range covering pA → mA (depending on the contaminant / medium), and the noise is less than 1 / 10 of the range.

[0033] S3. Generate a current-voltage curve based on the voltage data and current data, and determine the voltage jump threshold based on the current-voltage curve; See Figure 3 The image shown is a reference schematic diagram of the current-voltage curve. Figure 3 The figure shows the current-voltage curves when graphite / graphite is used as the interface material for van der Waals devices and the contaminants are micro- or nano-particles. Figure 3 As can be seen from this, the voltage jump threshold is 2.4 V and the current is 0.0182 A.

[0034] S4. Monitor whether the current-voltage curve changes linearly after the voltage jump threshold to determine whether the contaminant has been stripped off. After confirming that the contaminant has been stripped off, turn off the voltage source and collect and clean the stripped contaminant.

[0035] In this embodiment of the invention, since a voltage jump occurs after the contaminant is stripped, and a linear transformation trend appears between the subsequent voltage and current, this embodiment further confirms whether the current-voltage curve exhibits a linear change after observing the voltage jump. Figure 3 As shown, after confirming that the current-voltage curve changes linearly after a voltage jump, it can be determined that the contaminant has been stripped, and then the voltage source can be turned off to collect and clean the stripped contaminant.

[0036] In this embodiment of the invention, the method of collecting and cleaning the pollutants includes, but is not limited to, electrode adsorption, electrostatic adsorption or vacuum extraction, which can be determined according to actual application requirements. This invention does not limit this method.

[0037] See Figure 4 The diagram shown is a reference schematic before and after contaminant stripping according to an embodiment of the present invention. Figure 4 a is a reference diagram of the van der Waals interface before dye removal. Figure 4 b is a reference diagram of the van der Waals interface during the dye stripping process. Figure 4 c is a reference diagram of the van der Waals interface after the dye has been removed.

[0038] In this embodiment of the invention, the pollutant is a micro- or nanoparticle, an organic pollutant, or an inorganic pollutant. The organic pollutant includes organic carbon pollutants or biological / organic films, and the inorganic pollutant includes inorganic salts / ionic pollutants or oxide layers / oxides.

[0039] To improve the removal efficiency of the contaminants, the embodiments of the present invention further include: pre-determining the removal efficiency of various types of contaminants under different temperature environments through experiments to obtain corresponding temperature thresholds; determining the type of contaminants in the current interface material to be treated; controlling the ambient temperature according to the type of contaminants; adjusting the current ambient temperature to the corresponding temperature threshold of the contaminants for pressurization treatment to remove the contaminants from the interface material to be treated.

[0040] The methods for controlling ambient temperature in embodiments of the present invention include, but are not limited to, local microheaters (resistance heating), Peltier (thermoelectric) module temperature regulation, infrared heating lamps or hot plates, and constant temperature chambers / environmental chambers; the local microheater is a thin-film resistor / thin-film heater (with controllable heating rate) embedded under the electrode or sample; the Peltier module temperature regulation can precisely control the temperature and can be adjusted bidirectionally for cooling / heating; the infrared heating lamp or hot plate is used for overall ambient temperature rise; the constant temperature chamber / environmental chamber is used to control the combined effect of humidity and temperature; the appropriate ambient temperature control method can be selected according to the actual application scenario, and the embodiments of the present invention are not limited in this regard.

[0041] The environmental temperature control according to the type of pollutant in this invention includes: when the pollutant is a light organic (volatile / low viscosity) pollutant among organic carbon pollutants, the corresponding temperature threshold is, for example, 40–80°C, for 1–30 min, which can reduce adsorption energy and assist electric field desorption; when the pollutant is a high viscosity oil / heavy organic pollutant among organic carbon pollutants, the corresponding temperature threshold is, for example, 80–150°C (depending on the temperature resistance of the substrate), which is assisted by short-term heating for 5–30 min + pulsed electric field / solvent; when the pollutant is an inorganic pollutant, the corresponding temperature threshold is, for example, 40–90°C, which is assisted by heating + humidity control (drying / humidifying cycle) to promote swelling / redissolution; when the pollutant is a biological / organic film, the corresponding temperature threshold is, for example, 40–70°C (to avoid denaturation damage to the substrate), which can be combined with enzymatic / chemical auxiliaries.

[0042] After collecting and cleaning the stripped contaminants, the embodiments of the present invention further include: determining the type of contaminants in the current interface material to be treated, performing contaminant residue detection according to the type of contaminants, and verifying whether the stripping of the contaminants meets the preset requirements.

[0043] Whether the removal of the pollutant meets the preset requirements depends on the type of pollutant. In this embodiment of the invention, pollutant residue detection is performed based on the type of pollutant, including: When the type of contaminant is organic carbon contaminant (low molecular weight oils, hydrocarbons, organic residues), contaminant residues are detected by contact angle (CA), XPS (X-ray photoelectron spectroscopy, which quantitatively separates and analyzes the signal of the 1s electronic energy level of carbon atoms through C1s), Fourier transform infrared (FTIR) / Raman, surface conductivity / surface resistance and / or optical microscopy / spectral reflectance detection methods; for example, when using XPS to detect contaminant residues, if the percentage of surface carbon atoms recovers to ≤5% of the clean reference sample, or the C1s signal drops below a certain absolute threshold (depending on instrument sensitivity) below the initial value, it can be confirmed that the contaminant removal meets the preset requirements; for example, when using contact angle to detect contaminant residues, if the initial contamination causes the contact angle to be >80°, and the contact angle recovers to ±5° of the clean reference after cleaning, it can be confirmed that the contaminant removal meets the preset requirements; for example, when using Fourier transform infrared / Raman to detect contaminant residues, if the FTIR / Raman organic characteristic peaks (such as C–H) are detected, it can be confirmed that the contaminant removal meets the preset requirements. When the surface conductivity (or surface resistance) drops to the detection noise level, it can be confirmed that the removal of contaminants meets the preset requirements. For example, when using the surface conductivity / surface resistance detection method to detect contaminant residue, if the surface conductivity / contact resistance recovers to ≥90% of the cleanliness value, it can be confirmed that the removal of contaminants meets the preset requirements.

[0044] When the type of contaminant is a biological / organic film (protein, biofilm), contaminant residue is detected by fluorescence staining imaging, ATP (adenosine triphosphate) measurement, culture method or bioburden measurement and / or surface contact angle / spectral detection. For example, when using fluorescence staining imaging to detect contaminant residue, a decrease in fluorescence signal to background level or ATP signal < a specified threshold can confirm that the contaminant removal meets the preset requirements. For example, when using culture method to detect contaminant residue, a culture method showing 0 culturable cells can confirm that the contaminant removal meets the preset requirements.

[0045] When the contaminant is an inorganic salt / ionic contaminant (NaCl, sulfate, etc.), contaminant residue detection is performed using methods such as resistance / conductivity measurement, ion chromatography (IC) or surface wiping solution ion analysis, EIS (electrochemical impedance spectroscopy), and / or SEM / EDS (energy dispersive spectroscopy). For example, when using SEM / EDS, if the concentration of relevant ions in EDS / elemental analysis drops to the instrument's detection limit or ≤5% of the reference value, the contaminant removal can be confirmed to meet the preset requirements. Similarly, when using resistance / conductivity measurement, if the surface conductivity drops to ±10% of the cleanliness reference value, the contaminant removal can be confirmed to meet the preset requirements. Furthermore, when using surface wiping solution ion analysis, if the detected ion content in the wiping solution drops to the background noise level, the contaminant removal can be confirmed to meet the preset requirements. When the type of contaminant is an oxide layer / oxide (thin oxide film), contaminant residue is detected by XPS (oxidation state composition change), optical reflection, and / or AFM / STM (thickness / morphology). For example, when using XPS to detect contaminant residue, if the XPS shows that the peak intensity of the target oxidation state decreases to the reference or near zero, it can be confirmed that the contaminant removal meets the preset requirements. For example, when using AFM / STM to detect contaminant residue, if the oxide film thickness measured by AFM decreases below the initial value (e.g., from 5 nm → <0.5 nm), it can be confirmed that the contaminant removal meets the preset requirements.

[0046] When the type of contaminant is micro- or nano-particles (dust, microspheres, etc.), contaminant residue detection is performed using optical microscopy counting, SEM, particle counting (laser scattering), and / or surface roughness Ra / particle coverage statistics. For example, when using particle counting to detect contaminant residue, if the number of particles per unit area drops to ≤ the target threshold (e.g., ≤ 10 particles / cm², or according to industry standards), it can be confirmed that the contaminant removal meets the preset requirements.

[0047] In other embodiments of the present invention, the method of detecting pollutant residues can be adaptively adjusted according to the type of pollutant, based on actual application needs. For example, multiple methods can be used for cross-detection of the same type of pollutant to improve detection accuracy, or various thresholds or restrictions corresponding to the preset requirements can be adaptively adjusted according to industry standards, industry experience, etc.

[0048] The van der Waals interface contaminant removal method described in this invention removes contaminants by applying an electric field to the interface of the van der Waals interface material via electrodes. The electric field effect causes the contaminants to detach from the interface. Based on the current-voltage curve changes with and after contaminant removal, the removal result can be quickly confirmed. Compared to existing technologies, this method offers better removal effects for different types of contaminants and has excellent applicability. Furthermore, since the voltage at the electrodes is controllable, monitoring current changes allows for precise determination of the contaminant removal degree, improving the reliability of the removal process. Because the cleaning process does not rely on chemical reagents, it reduces wear and tear on the device itself and avoids the adverse environmental impact of chemical residue emissions, resulting in superior environmental protection. The equipment used for the cleaning process is all conventional, with a simple structure, low cost, and easy disassembly and maintenance.

[0049] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0050] Similarly, it should be understood that, for the purpose of simplification and aiding understanding of one or more aspects of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of the invention above. Other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein. The specification and embodiments are to be considered exemplary only, and it should be noted that the above embodiments are illustrative of the invention and not restrictive, and that alternative embodiments can be devised by those skilled in the art without departing from its scope.

Claims

1. A method for removing van der Waals interface contaminants, characterized in that, Includes the following steps: The interface material to be treated is placed in the electrode device. The interface material to be treated is a van der Waals device interface material including at least two interfaces. The electrode device includes at least two electrodes and a voltage source. The two electrodes connected to the voltage source are respectively attached to the outside of the interface of the interface material to be treated, so that the voltage source, the two electrodes and the interface material to be treated form a circuit. The voltage source is controlled to apply pressure, so that the output voltage applied by the voltage source to the interface material to be processed is gradually increased, and voltage data and current data on the interface material to be processed are collected simultaneously. A current-voltage curve is generated based on the voltage and current data, and the voltage jump threshold is determined based on the current-voltage curve. The current-voltage curve after the voltage jump threshold is monitored to determine whether the contaminant has been stripped. After confirming that the contaminant has been stripped, the voltage source is turned off, and the stripped contaminant is collected and cleaned.

2. The method for removing van der Waals interface contaminants according to claim 1, characterized in that: The two interfaces of the van der Waals device interface material are graphite / graphite, graphite / molybdenum disulfide, or graphite / disulfide, respectively.

3. The method for removing van der Waals interface contaminants according to claim 1, characterized in that: The pollutants are micro / nano particles, organic pollutants, or inorganic pollutants. The organic pollutants include organic carbon pollutants or biological / organic films, and the inorganic pollutants include inorganic salts / ionic pollutants or oxide layers / oxides.

4. The method for removing van der Waals interface contaminants according to claim 3, characterized in that, The method further includes: determining the stripping efficiency of various types of pollutants under different temperature environments through experiments to obtain the corresponding temperature thresholds; determining the type of pollutant in the current interface material to be treated; controlling the ambient temperature according to the type of pollutant; adjusting the current ambient temperature to the corresponding temperature threshold of the pollutant for pressurization treatment to strip the pollutant from the interface material to be treated.

5. The method for removing van der Waals interface contaminants according to claim 3, characterized in that, After collecting and cleaning the stripped contaminants, the method further includes: Determine the type of contaminant in the current interface material to be processed, perform contaminant residue detection based on the type of contaminant, and verify whether the removal of the contaminant meets the preset requirements.

6. The method for removing van der Waals interface contaminants according to claim 5, characterized in that, The process of detecting pollutant residues based on the type of pollutant includes: When the pollutant is an organic carbon pollutant, the pollutant residue is detected by contact angle, XPS, Fourier transform infrared / Raman, surface conductivity / surface resistance and / or optical microscopy / spectral reflectance. When the type of contaminant is a biological / organic film, the contaminant residue is detected by fluorescence staining imaging, ATP measurement, culture method or bioburden measurement and / or surface contact angle / spectral detection. When the type of pollutant is inorganic salt / ionic pollutant, the pollutant residue is detected by means of resistance / conductivity measurement, ion chromatography or surface wiping liquid ion analysis, EIS and / or SEM / EDS detection. When the type of contaminant is an oxide layer / oxide, the contaminant residue is detected by XPS, optical reflection and / or AFM / STM detection methods; When the pollutant is micro or nanoparticle, the pollutant residue is detected by optical microscopy counting, SEM, particle counting, and / or surface roughness Ra / particle coverage statistics.

7. The method for removing van der Waals interface contaminants according to claim 1, characterized in that: When the voltage source applies pressure, the voltage is applied gradually or in a pulsed manner.

8. The method for removing van der Waals interface contaminants according to claim 1, characterized in that: The electrode structure in the electrode device is a parallel plate electrode, a ring electrode, or a multi-electrode array structure.

9. The method for removing van der Waals interface contaminants according to claim 1, characterized in that: The methods for collecting and cleaning the pollutants include electrode adsorption, electrostatic adsorption, or vacuum extraction.

10. The method for removing van der Waals interface contaminants according to claim 1, characterized in that: The electrode device is also equipped with an electrode protection element connected to the electrode, the electrode protection element including a current-limiting resistor, a TVS, or a soft-start circuit.

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