Method and apparatus for monitoring leak rate of a reaction chamber, and semiconductor processing apparatus

Abstract

To solve the problem that the prior art cannot monitor the leakage rate of a reaction chamber in real time and accurately, the present application provides a reaction chamber leakage rate monitoring method, device and semiconductor process equipment. The reaction chamber leakage rate monitoring method comprises: in a continuous wafer processing process, real-time acquisition of pressure valve opening degree and low radio frequency power peak-to-peak voltage of each wafer when the wafer is subjected to a same preset process step in a reaction chamber; determination of a first difference between pressure valve opening degrees corresponding to two adjacent wafers; determination of a second difference between low radio frequency power peak-to-peak voltages corresponding to the two adjacent wafers; and determination of whether the reaction chamber leaks according to the first difference and the second difference. By using the above method, the leakage rate of the reaction chamber can be monitored in real time and accurately.

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