A rare earth ion doped lead-based perovskite material, a preparation method and application thereof

Abstract

This invention provides a rare-earth ion-doped lead-based perovskite material, its preparation method, and its application. The method includes the following steps: a rare-earth compound, a complexing agent, a surfactant, and a solvent are refluxed under an inert atmosphere. After the reaction, the mixture is rotary evaporated and vacuum dried to obtain a rare-earth complex. The rare-earth complex, lead compound, auxiliary complexing agent, and hydrohalic acid aqueous solution are stirred under heating conditions until the solution is clear and transparent. A precipitant is added, and after the reaction, the mixture is filtered and dried to obtain the rare-earth ion-doped lead-based perovskite material. The rare-earth ion-doped lead-based perovskite material of this invention is synthesized with the aid of rare-earth complexes, utilizing Yb 3+ Er 3+ 、Nd 3+ It forms a stable [ReX6] complex with complexing agents such as trifluoroacetate. 3‑ The octahedral structure makes it similar to [PbX6]. 4‑ The framework matches in the lattice dimension.

Description

Technical Field

[0001] This invention belongs to the field of photoelectric detection devices, and in particular relates to a rare earth ion-doped lead-based perovskite material, its preparation method and application. Background Technology

[0002] Photodetectors have important applications in medical monitoring, autonomous driving, and medical imaging. Silicon-based and indium gallium arsenide (InGaAs) photodiodes, currently the main commercial photodetectors, face challenges such as weak absorption coefficients and high manufacturing costs, which limit their integration into flexible and lightweight systems. Therefore, the development of next-generation photodetectors is urgently needed. Lead-based halide perovskite materials possess advantages such as low exciton binding energy, high absorption coefficients, and long carrier diffusion periods, making them a research hotspot for next-generation photodetectors. However, due to the instability of the perovskite structure and its susceptibility to oxidation, perovskite-containing thin films exhibit increased defects, leading to insufficient material stability and affecting detector performance.

[0003] Rare earth ions, due to their abundant outer electron structure and coordination environment, have ionic radii similar to Pb. 2+ With comparable ionic radii, doping Pb-based perovskites can increase the structural stability of the perovskite, improve the quality of the perovskite film, and reduce the defect density of the film. In current technology, the preparation of rare-earth ion-doped perovskite quantum dots and their applications in stability enhancement and optoelectronic devices have been disclosed. For example, Chinese invention patent (publication number: CN120137658A, publication date: 2025-06-13) discloses a ytterbium-doped perovskite quantum dot, its preparation method, and its application, achieving effective doping of the rare-earth anisovalent ion ytterbium in perovskite, thereby improving the near-infrared luminescence of the quantum dots and enhancing their storage stability. Chinese invention patent (publication number: CN120843098A, publication date: 2025-10-28) discloses a rare-earth perovskite quantum dot, its preparation method, and its application in solar cells; the provided rare-earth perovskite quantum dot preparation is simple, and the provided solar cell exhibits good stability. However, existing technologies are all applied to the synthesis, preparation, and application of perovskite quantum dots, and there is no synthesis and application of rare earth-doped perovskite crystalline materials. Summary of the Invention

[0004] In view of this, the present invention aims to overcome the defects in the prior art and proposes a rare earth ion doped lead-based perovskite material, its preparation method and application.

[0005] To achieve the above objectives, the technical solution of the present invention is implemented as follows: This invention provides a method for preparing rare-earth ion-doped lead-based perovskite materials, comprising the following steps: Step 1 involves refluxing rare earth compounds, complexing agents, surfactants, and solvents under an inert atmosphere. After the reaction is complete, the mixture is rotary evaporated and vacuum dried to obtain rare earth complexes. Step 2 involves stirring the rare earth complex, lead compound, auxiliary complexing agent, and hydrohalic acid aqueous solution under heating conditions until the solution becomes clear and transparent. A precipitant is then added, and after the reaction is complete, the mixture is filtered and dried to obtain the rare earth ion-doped lead-based perovskite material. The complexing agent in step 1 is at least one of trifluoroacetic acid, trioctylphosphine oxide, tetrabutylammonium chloride, or oleic acid; The auxiliary complexing agent in step 2 is at least one of ethylenediaminetetraacetic acid, N-hydroxyethylethylenediaminetriethylamine, or diethylenetriaminepentaacetic acid.

[0006] Further, in step 1, the solid-liquid ratio of the rare earth compound, complexing agent, surfactant, and solvent is (0.1-6) g:(0.005-5) g:(0.005-5) g:1 mL; the rare earth compound in step 1 is a rare earth salt and / or a rare earth oxide; the rare earth element in the rare earth salt is at least one of neodymium, erbium, or ytterbium; the rare earth element in the rare earth oxide is at least one of neodymium, erbium, or ytterbium; the hydrophilic head group of the surfactant in step 1 is a quaternary ammonium cation or a pyridine cation; the surfactant in step 1 is at least one of hexadecyltrimethylammonium bromide, tetradecyltrimethylammonium bromide, hexadecylpyridine chloride, or tetradecylpyridine bromide; the solvent in step 1 is at least one of ethanol, dichloromethane, dimethyl sulfoxide, isopropanol, or tetrahydrofuran. The above surfactant can form ion-pair pairs with the carboxylate anion in the complexing agent and attract the rare earth ions through electrostatic attraction.

[0007] Furthermore, the reflux reaction temperature in step 1 is 78-80 ℃, and the time is 0.5-12 h; the rotary evaporation temperature in step 1 is 30-60 ℃; and the vacuum degree in the vacuum drying step in step 1 is -0.03~-0.09 MPa.

[0008] The reaction in step 1 is due to rare earth ions (Re 3+ ) and lead (Pb 2+ Rare earth elements exhibit significant differences in ionic radius and are prone to hydrolysis and the formation of independent halide phases. By using strong coordinating complexing agents (such as trifluoroacetate), rare earth elements can be "protected," allowing them to react in the subsequent hydrohalic acid system as [ReX]. n ] (3-n)-It may exist in the form of organic-inorganic hybrid complexes, making it easier to preserve and participate in reactions; the surfactants in it are used to reduce the surface tension of the solution, increase the effective contact probability between rare earth ions and complexing agents, and at the same time increase the subsequent solubility of rare earth complexes in the aqueous phase through micelle formation.

[0009] Furthermore, in step 2, the solid-liquid ratio of the rare earth complex, lead compound, auxiliary complexing agent, and hydrohalic acid aqueous solution is (0.1-5) g:(0.1-6) g:(0.01-2) g:1 mL; the molar concentration of the hydrohalic acid aqueous solution in step 2 is 3-12 mol / L; and the molar ratio of the precipitant to the lead compound in step 2 is 3-6 times.

[0010] Furthermore, the lead compound in step 2 is at least one of lead oxide, lead nitrate, or basic lead carbonate; the hydrohalic acid aqueous solution in step 2 is at least one of hydrochloric acid aqueous solution, hydrobromic acid aqueous solution, or hydroiodic acid aqueous solution; and the precipitant in step 2 is at least one of acetate containing cesium, methylamine, or formamidinium. The aforementioned auxiliary complexing agent is used to stabilize rare earth ions, preventing their hydrolysis and precipitation in hydroiodic acid; simultaneously, it regulates the crystallization rate of the perovskite phase, promoting the simultaneous precipitation of rare earth ions and lead ions, achieving uniform doping, thereby improving the quality of rare earth ion-doped lead-based perovskite materials.

[0011] Furthermore, the heating temperature in step 2 is 60-90℃; the reaction time in step 2 is 2-6 h; and the drying temperature in step 2 is 120-150℃, and the time is 12-24 h.

[0012] The present invention also provides a rare earth ion-doped lead-based perovskite material prepared by the preparation method described above.

[0013] This invention also provides an application of a rare-earth ion-doped lead-based perovskite material in the fabrication of a photodetector.

[0014] Furthermore, the method for fabricating the photodetector includes the following steps: Step a involves cleaning, drying, and ozone plasma surface treatment of the conductive substrate. Step b involves depositing a hole transport material on top of the conductive substrate and annealing it to form a hole transport layer. Step c involves depositing a rare-earth ion-doped lead-based perovskite precursor solution on top of the hole transport layer, followed by annealing to form a rare-earth ion-doped lead-based perovskite layer. Step d involves depositing an electron transport material on top of the rare-earth ion-doped lead-based perovskite layer to obtain an electron transport layer. Step e involves depositing a metal electrode material on top of the electron transport layer to obtain the photodetector. The rare earth ion-doped lead-based perovskite precursor solution includes the rare earth ion-doped lead-based perovskite material.

[0015] Further, the rare-earth ion-doped lead-based perovskite precursor solution in step c comprises rare-earth ion-doped lead-based perovskite material, additives, chloride salts, and solvents in a solid-liquid ratio of (2-4) g:(0.2-1) g:(0.1-0.5) g:(2-5) mL; the additives are at least one of dimethylamine iodide, triammonium 4-sulfophthalate, stannous isooctanoate, or lead thiocyanate; the chloride salts are at least one of chloride salts containing cesium, methylamine, or formamidinium; the solvent is a mixture of N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of (2-6):1; the hole transport material in step b is 4,4-cyclohexylbis(N,N-bis(p-tolyl)aniline), poly(bis(4-phenyl)(4-butylphenyl)amine), nickel oxide, copper oxide, or cuprous thiocyanate. At least one; the electron transport material in step d is at least one of [6,6]-phenyl-C61-butyrate, tin dioxide, or fullerene; the metal electrode material in step e includes at least one of gold, silver, or aluminum; the conductive substrate in step a is at least one of indium tin oxide transparent conductive glass (ITO transparent conductive glass), fluorine-doped tin dioxide transparent conductive glass (FTO transparent conductive glass), a flexible substrate containing an indium tin oxide transparent conductive layer, or a flexible substrate containing a fluorine-doped tin dioxide transparent conductive layer; the additive is used to regulate the nucleation rate of the perovskite film, fix rare earth ions at the grain boundaries, so that it can continuously exert interface passivation and anti-oxidation capabilities, and improve the quality of the perovskite film; the chloride salt is used to passivate deep-level defects formed by cation vacancies, and improve the density and coverage of the film.

[0016] The deposition method in step b is spin coating or vapor deposition; the deposition method in step c is spin coating; the deposition method in step d is spin coating or vapor deposition; and the deposition method in step e is high-temperature vapor deposition.

[0017] Compared with the prior art, the present invention has the following advantages: The rare-earth ion-doped lead-based perovskite material of this invention is synthesized with the aid of rare-earth complexes, utilizing Yb 3+ Er 3+ 、Nd 3+ In hydrohalic acid systems, it forms a stable [ReX6] complex with complexing agents such as trifluoroacetate. 3- The octahedral structure makes it similar to [PbX6]. 4-The framework matches in the lattice dimension; due to Yb 3+ Er 3+ 、Nd 3+ ionic radius and Pb 2+ The difference is minimal, and only has 2 The F5 / 2 single excited state energy level exhibits the lowest lattice distortion and nonradiative recombination loss caused by doping, enabling sublattice-level uniform doping. Simultaneously, these three rare earth ions possess characteristic absorption in the infrared region, significantly broadening the absorption range of lead-based halide perovskite materials. Furthermore, the organic ligands in the rare earth complexes (such as trifluoroacetate) effectively shield water molecules and hydroxyl groups (whose characteristic absorptions are located at 1396 nm and 1910 nm), preventing the quenching of rare earth excitation energies and thus achieving near-infrared photoluminescence quantum yields 2-5 times higher than conventional methods.

[0018] The rare earth ion-doped lead-based perovskite material described in this invention is used to prepare optoelectronic devices, which are mainly used in the field of photodetectors. Compared with the prior art, the absorption range of this detector is broadened due to the presence of rare earth ions, and the stability of the detector is greatly improved. Attached Figure Description

[0019] Figure 1 The XRD pattern of the Yb@FAPbI3 perovskite material described in Example 1 of this invention; Figure 2 This is a scanning electron microscope image of the Yb@FAPbI3 perovskite material described in Example 1 of the present invention; Figure 3 The energy dispersive spectroscopy (EDS) spectrum of the Yb@FAPbI3 perovskite material described in Example 1 of this invention is shown below. Figure 4 The responsivity spectrum of the Yb@FAPbI3 perovskite photodetector described in Embodiment 1 of the present invention; Figure 5 The responsivity spectrum of the FAPbI3 perovskite photodetector described in Comparative Example 1 of this invention; Figure 6 The responsivity spectrum of the Yb@FAPbI3 perovskite photodetector described in Comparative Example 2 of this invention; Figure 7 This is a scanning electron microscope image of the Yb@FAPbI3 perovskite material described in Comparative Example 3 of the present invention; Figure 8 This is a graph showing the EDS elemental content results of the Yb@FAPbI3 perovskite material described in Comparative Example 3 of this invention. Figure 9 This is a scanning electron microscope image of the Yb@FAPbI3 perovskite material described in Comparative Example 4 of the present invention; Figure 10 The image shows the EDS elemental content results of the Yb@FAPbI3 perovskite material described in Comparative Example 4 of this invention. Detailed Implementation

[0020] Unless otherwise defined, the technical terms used in the following embodiments have the same meanings as commonly understood by those skilled in the art. Unless otherwise specified, the experimental reagents used in the following embodiments are conventional biochemical reagents; and the experimental methods described are conventional methods.

[0021] The present invention will be described in detail below with reference to the embodiments.

[0022] Example 1

[0023] The application of a rare-earth ion-doped lead-based perovskite material in the fabrication of photodetectors includes the following steps: (1) Synthesis of ytterbium trifluoroacetic acid complex (Yb(TFA)3): Under an inert atmosphere, 14.8 g of ytterbium oxide, 12.8 g of trifluoroacetic acid, 2.5 g of hexadecyltrimethylammonium bromide, and 25 mL of a mixed solvent of dimethyl sulfoxide and ethanol (volume ratio 1:4) were added to a 50 mL three-necked flask. The mixture was heated to 78-80 °C and refluxed for 2 h with stirring. During the reaction, the white ytterbium oxide powder gradually dissolved, and the system changed from a suspension to a yellow transparent clear solution. After the reaction was completed, the solution was cooled to room temperature and evaporated using a rotary evaporator in a 50 °C water bath under a vacuum of -0.09 MPa to obtain a white viscous solid. The solid was then transferred to a vacuum drying oven for drying to obtain the ytterbium trifluoroacetic acid complex (Yb(TFA)3). (2) Synthesis of Yb@FAPbI3 perovskite optoelectronic materials: Before the reaction, 20 mL of hydroiodic acid (47%, w / w) and 10 mL of deionized water were measured using a graduated cylinder and added to 50 mL round-bottom flasks. The round-bottom flasks were placed in a bath at 85 °C. Then, 5 g of ytterbium trifluoroacetate complex, 3 g of lead oxide, and 0.5 g of ethylenediaminetetraacetic acid were weighed and added to the round-bottom flasks. The mixture was kept at 85 °C until a yellow, transparent, and clear solution was formed. Then, 5 g of formamidine acetate was weighed and added to the reaction system. After keeping the mixture at 85 °C for 4 hours, black microcrystalline particles were formed. The product was then filtered and dried in an oven at 120 °C for more than 12 hours to obtain Yb@FAPbI3 perovskite optoelectronic material. (3) Fabrication and assembly of photodetectors: The ITO transparent conductive glass was washed with water, isopropanol, acetone, and ethanol. Then, the conductive substrate glass was dried in an oven and then subjected to ozone plasma surface treatment. 1 g of nickel oxide material was weighed and dissolved in 1.5 mL of deionized water in the air and ultrasonically dispersed to form a uniform dispersion. The dispersion was then spin-coated onto the ozone plasma-treated ITO transparent conductive glass at a spin-coating speed of 4000 rpm for 30 s. After spin-coating, the glass was transferred to a hot plate at 150 ℃ for annealing for 30 min to obtain the hole transport layer. The substrate glass was then transferred to a glove box. 3 g of Yb@FAPbI3 perovskite optoelectronic material, 0.2 g of formamidine chloride hydrochloride, and 0.5 g of dimethylamine iodide were weighed and dissolved in 2 mL of a mixed solvent (N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of 4:1). The solution was magnetically stirred at room temperature in a glove box for 3 h until dissolved. The solution was then filtered through a 0.45 μm pore size filter membrane to obtain a transparent and clear rare-earth ion Yb-doped FAPbI3 perovskite precursor solution for later use. The Yb@FAPbI3 perovskite precursor solution was then spin-coated and annealed at a speed of 5000 rpm for 50 s. Ethyl acetate was rapidly added as an antisolvent 25 s before the end of the spin-coating process to facilitate the re-precipitation and crystallization of the perovskite phase. The solution was then transferred to a hot plate at 120 °C for annealing to obtain a rare-earth-doped perovskite light-absorbing layer. Finally, the substrate glass was transferred to a vacuum evaporation chamber for the deposition of the electron transport layer, fullerene (C... 60 The process involves the vapor deposition of Yb@FAPbI3 perovskite photodetector and the deposition of silver metal electrodes.

[0024] The obtained material was first subjected to X-ray diffraction analysis, such as... Figure 1 As shown, the prepared Yb@FAPbI3 perovskite optoelectronic material has a configuration that perfectly matches that of FAPbI3, with no impurity peaks, indicating that the target crystal form was obtained; scanning electron microscopy and EDS characterization were performed, as shown... Figure 2 and Figure 3 As shown, micron-sized crystal particles with a polyhedral block shape were obtained. The rare earth ions Yb in the EDS display material were successfully introduced into the crystal material, realizing the successful doping of FAPbI3 perovskite material with rare earth ions.

[0025] The responsivity curve of the obtained Yb@FAPbI3 perovskite photodetector was tested, as shown below. Figure 4 As shown, the detector exhibits a response within the intrinsic bandgap absorption range of FAPbI3 (300-900 nm), and simultaneously adds a detection peak approximately 30 nm wide in the infrared region around 1000 nm. This is attributed to the characteristic absorption peak of Yb ions after rare-earth ion doping into the crystal lattice. This detector can be used in various fields such as ranging, remote sensing, and medicine.

[0026] Comparative Example 1 The only difference from Example 1 is that FAPbI3 perovskite photoelectric material is used instead of Yb@FAPbI3 perovskite photoelectric material for photodetector fabrication.

[0027] The responsivity curve of the obtained FAPbI3 perovskite photodetector was tested, such as... Figure 5 As shown, the detector exhibits a response within the intrinsic bandgap absorption range of FAPbI3 in the 300-900 nm range.

[0028] Comparative Example 2 The application of a photoelectric material in the fabrication of a photodetector includes the following steps: The ITO transparent conductive glass was washed with water, isopropanol, acetone, and ethanol. Then, the conductive substrate glass was dried in an oven and then subjected to ozone plasma surface treatment. 1 g of nickel oxide material was weighed and dissolved in 1.5 mL of deionized water in the air and ultrasonically dispersed to form a uniform dispersion. The dispersion was then spin-coated onto the ozone plasma-treated ITO transparent conductive glass at a spin-coating speed of 4000 rpm for 30 s. After spin-coating, the glass was transferred to a hot plate at 150 ℃ for annealing for 30 min to obtain the hole transport layer. The substrate glass was then transferred to a glove box. 2.08 g of PbI2, 0.9 g of formamidine hydroiodate, 0.07 g of YbCl3, 0.2 g of formamidine chloride hydrochloride, and 0.5 g of dimethylamine iodide were weighed and dissolved in 2 mL of a mixed solvent (N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of 4:1). The solution was magnetically stirred at room temperature in a glove box for 3 h until dissolved. The solution was then filtered through a 0.45 μm pore size filter membrane to obtain a transparent and clear rare-earth ion Yb-doped FAPbI3 perovskite precursor solution for later use. The Yb@FAPbI3 perovskite precursor solution was then spin-coated and annealed at 5000 rpm for 50 s. Ethyl acetate was rapidly added as an antisolvent 25 s before the end of the spin-coating process to facilitate the re-precipitation and crystallization of the perovskite phase. The solution was then transferred to a 120°C container. Annealing was performed on a hot plate at ℃ to obtain a rare earth-doped perovskite light-absorbing layer; then the substrate glass was transferred to a vacuum evaporation chamber to form a fullerene (C) electron transport layer. 60 The process involves the vapor deposition of Yb@FAPbI3 perovskite photodetector and the deposition of silver metal electrodes.

[0029] The obtained photodetector only showed a response in the 300-900 nm range, and its responsivity was lower than that of Example 1. Figure 6 As shown. This may be because the rare earth ion Yb did not successfully dope into the perovskite lattice under this method.

[0030] Comparative Example 3 The only difference from Example 1 is that step (2) involves the synthesis of the Yb@FAPbI3 perovskite optoelectronic material. Before the reaction, 20 mL of hydroiodic acid (47%, w / w) and 10 mL of deionized water were measured using a graduated cylinder and added to 50 mL round-bottom flasks. The round-bottom flasks were placed in a bath at 85 °C. Then, 2.73 g of ytterbium trichloride complex, 3 g of lead oxide, and 0.5 g of ethylenediaminetetraacetic acid were weighed and added to the round-bottom flasks. The mixture was kept at 85 °C until a yellow, transparent, and clear solution was formed. Then, 5 g of formamidine acetate was weighed and added to the reaction system. After keeping the mixture at 85 °C for 4 hours, black microcrystalline particles were formed. The product was then filtered and dried in an oven at 120 °C for more than 12 hours to obtain Yb@FAPbI3 perovskite optoelectronic material.

[0031] The obtained optoelectronic materials were subjected to SEM surface morphology testing and EDS analysis, such as... Figure 7-8 As shown, the scanning electron microscope (SEM) images reveal an irregular crystal morphology with surface pores, while EDS analysis shows no rare earth ions entering the crystal.

[0032] Comparative Example 4 The only difference from Example 1 is: Step (1) Synthesis of ytterbium trifluoroacetic acid complex (Yb(TFA)3): Under an inert atmosphere, 14.8 g of ytterbium oxide, 12.8 g of trifluoroacetic acid, and 25 mL of a mixed solvent of dimethyl sulfoxide and ethanol (volume ratio 1:4) were added to a 50 mL three-necked flask. The mixture was heated to 78-80 °C under stirring and refluxed. During the reflux reaction, the oxide dissolution rate was slower than in Example 1, and a small amount of rare earth oxides could not be completely dissolved. After the reaction lasted for 10 h, the solution was cooled to room temperature and evaporated using a rotary evaporator in a 50 °C water bath under a vacuum of -0.09 MPa to obtain a pale yellow viscous solid. This solid was then transferred to a vacuum drying oven for drying to obtain the product. XRD characterization revealed that the obtained rare earth complex product was impure, containing a small amount of unreacted ytterbium oxide.

[0033] Step (2) Synthesis of Yb@FAPbI3 perovskite optoelectronic materials: Before the reaction, 20 mL of hydroiodic acid (47%, w / w) and 10 mL of deionized water were measured with a graduated cylinder and added to a 50 mL round-bottom flask. The round-bottom flask was placed in a bath at 85 °C. Then, 5 g of the product from step (1), 3 g of lead oxide and 0.5 g of ethylenediaminetetraacetic acid were weighed and added to the round-bottom flask. The mixture was kept at 85 °C until a yellow transparent clear solution was formed. Then, 5 g of formamidine acetate was weighed and added to the reaction system. After keeping the mixture warm for 4 h, black microcrystalline particles were formed. The product was then filtered and dried in an oven at 120 °C for more than 12 h to obtain Yb@FAPbI3 perovskite optoelectronic material.

[0034] The obtained optoelectronic materials were subjected to SEM surface morphology testing and EDS analysis, such as... Figure 9-10 As shown, the scanning electron microscope (SEM) results show that the crystal morphology is irregular with a large number of surface grooves, while EDS shows that almost no rare earth ions are present.

[0035] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for preparing rare earth ion-doped lead-based perovskite material, characterized in that: Includes the following steps: Step 1 involves refluxing rare earth compounds, complexing agents, surfactants, and solvents under an inert atmosphere. After the reaction is complete, the mixture is rotary evaporated and vacuum dried to obtain rare earth complexes. Step 2 involves stirring the rare earth complex, lead compound, auxiliary complexing agent, and hydrohalic acid aqueous solution under heating conditions until the solution becomes clear and transparent. A precipitant is then added, and after the reaction is complete, the mixture is filtered and dried to obtain the rare earth ion-doped lead-based perovskite material. The complexing agent in step 1 is at least one of trifluoroacetic acid, trioctylphosphine oxide, tetrabutylammonium chloride, or oleic acid; The auxiliary complexing agent in step 2 is at least one of ethylenediaminetetraacetic acid, N-hydroxyethylethylenediaminetriethylamine, or diethylenetriaminepentaacetic acid.

2. The method for preparing rare-earth ion-doped lead-based perovskite material according to claim 1, characterized in that: In step 1, the solid-liquid ratio of the rare earth compound, complexing agent, surfactant, and solvent is (0.1-6) g:(0.005-5) g:(0.005-5) g:1 mL; the rare earth compound in step 1 is a rare earth salt and / or a rare earth oxide; the rare earth element in the rare earth salt is at least one of neodymium, erbium, or ytterbium; the rare earth element in the rare earth oxide is at least one of neodymium, erbium, or ytterbium; the hydrophilic head group of the surfactant in step 1 is a quaternary ammonium cation or a pyridine cation; the surfactant in step 1 is at least one of hexadecyltrimethylammonium bromide, tetradecyltrimethylammonium bromide, hexadecylpyridine chloride, or tetradecylpyridine bromide; the solvent in step 1 is at least one of ethanol, dichloromethane, dimethyl sulfoxide, isopropanol, or tetrahydrofuran.

3. The method for preparing rare-earth ion-doped lead-based perovskite material according to claim 1, characterized in that: The reflux reaction in step 1 is carried out at a temperature of 78-80 ℃ for 0.5-12 h; the rotary evaporation step in step 1 is carried out at a temperature of 30-60 ℃ until the solvent is evaporated; the vacuum degree of the vacuum drying step in step 1 is -0.03~-0.09 MPa.

4. The method for preparing rare-earth ion-doped lead-based perovskite material according to claim 1, characterized in that: The solid-liquid ratio of the rare earth complex, lead compound, auxiliary complexing agent and hydrohalic acid aqueous solution in step 2 is (0.1-5) g:(0.1-6) g:(0.01-2) g:1 mL; the molar concentration of the hydrohalic acid aqueous solution in step 2 is 3-12 mol / L; and the molar ratio of the precipitant to the lead compound in step 2 is (3-6):

1.

5. The method for preparing rare-earth ion-doped lead-based perovskite material according to claim 1, characterized in that: The lead compound in step 2 is at least one of lead oxide, lead nitrate, or basic lead carbonate; the hydrohalic acid aqueous solution in step 2 is at least one of hydrochloric acid aqueous solution, hydrobromic acid aqueous solution, or hydroiodic acid aqueous solution; the precipitant in step 2 is at least one of acetate containing cesium, methylamine, or formamidinium.

6. The method for preparing rare-earth ion-doped lead-based perovskite material according to claim 1, characterized in that: The heating temperature in step 2 is 60-90℃; the reaction time in step 2 is 2-6 h; and the drying temperature in step 2 is 120-150℃, and the time is 12-24 h.

7. A rare earth ion-doped lead-based perovskite material prepared by the preparation method according to any one of claims 1-6.

8. An application of the rare-earth ion-doped lead-based perovskite material according to claim 7, characterized in that: The application of the rare earth ion-doped lead-based perovskite material in the fabrication of photodetectors.

9. The application of the rare earth ion-doped lead-based perovskite material according to claim 8, characterized in that: The method for fabricating the photodetector includes the following steps: Step a involves cleaning, drying, and ozone plasma surface treatment of the conductive substrate. Step b involves depositing a hole transport material on top of the conductive substrate and then annealing it to form a hole transport layer. Step c involves depositing a rare-earth ion-doped lead-based perovskite precursor solution on top of the hole transport layer, followed by annealing to form a rare-earth ion-doped lead-based perovskite layer. Step d involves depositing an electron transport material on top of the rare-earth ion-doped lead-based perovskite layer to obtain an electron transport layer. Step e involves depositing a metal electrode material on top of the electron transport layer to obtain the photodetector. The rare earth ion-doped lead-based perovskite precursor solution includes the rare earth ion-doped lead-based perovskite material as described in claim 7.

10. The application of the rare-earth ion-doped lead-based perovskite material according to claim 9, characterized in that: The rare-earth ion-doped lead-based perovskite precursor solution in step c comprises rare-earth ion-doped lead-based perovskite material, additives, chloride salts, and solvents in a solid-liquid ratio of (2-4) g:(0.2-1) g:(0.1-0.5) g:(2-5) mL; the chloride salt is at least one of cesium, methylamine, or formamidinium chloride; the additive is at least one of dimethylamine iodide, triammonium 4-sulfophthalate, stannous isooctanoate, or lead thiocyanate; the solvent is a mixture of N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of (2-6):1; the hole transport material in step b is 4,4 - At least one of cyclohexylbis[N,N-bis(p-tolyl)aniline], poly[bis(4-phenyl)(4-butylphenyl)amine], nickel oxide, copper oxide, or cuprous thiocyanate; the electron transport material in step d is at least one of methyl [6,6]-phenyl-C61-butyrate, tin dioxide, or fullerene; the metal electrode material in step e includes at least one of gold, silver, or aluminum; the conductive substrate in step a is at least one of indium tin oxide transparent conductive glass, fluorine-doped tin dioxide transparent conductive glass, a flexible substrate containing an indium tin oxide transparent conductive layer, or a flexible substrate containing a fluorine-doped tin dioxide transparent conductive layer. The deposition method in step b is spin coating or vapor deposition; the deposition method in step c is spin coating; the deposition method in step d is spin coating or vapor deposition; and the deposition method in step e is high-temperature vapor deposition.

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