Semiconductor structure, method of manufacturing the same, semiconductor device, and electronic apparatus
By forming a doped layer on an oxide semiconductor layer and performing thermal annealing, the problems of uneven doping and interface damage are solved, thereby improving the stability and reliability of semiconductor devices.
CN122248979APending Publication Date: 2026-06-19BEIJING SUPERSTRING ACAD OF MEMORY TECH
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING SUPERSTRING ACAD OF MEMORY TECH
- Filing Date
- 2024-12-18
- Publication Date
- 2026-06-19
AI Technical Summary
⚠Technical Problem
In existing semiconductor devices, uneven doping and damage to the oxide semiconductor layer interface lead to unstable device performance.
⚗Method used
By forming a doped layer on an oxide semiconductor layer and performing thermal annealing, the target dopant element diffuses into the oxide semiconductor layer, avoiding the inhomogeneity and interface damage caused by plasma injection.
🎯Benefits of technology
Uniform doping of the oxide semiconductor layer was achieved, which improved the stability and reliability of the device and reduced the risk of damage to the interface.
✦ Generated by Eureka AI based on patent content.
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Abstract
This application relates to a semiconductor structure and its fabrication method, a semiconductor device, and an electronic device. The fabrication method of the semiconductor structure includes providing a substrate; forming an oxide semiconductor layer on the substrate; forming a doped layer containing a target dopant element on the side of the oxide semiconductor layer away from the substrate; and performing a thermal annealing treatment on the resulting structure to diffuse the target dopant element in the doped layer into the oxide semiconductor layer, thereby forming an oxide semiconductor layer containing the target dopant element. The fabrication method of this application can achieve doping of the oxide semiconductor layer, improving the stability of the oxide semiconductor device. Compared to plasma implantation, this application achieves doping of the oxide semiconductor layer through thermal diffusion by first forming a doped layer containing the target dopant element and then performing an annealing treatment, thus avoiding damage to the interface of the oxide semiconductor layer and improving the uniformity of the distribution of the target dopant element in the oxide semiconductor layer.
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