Substrate processing apparatus and control method thereof

Abstract

The present invention relates to a substrate processing apparatus, characterized in that it comprises: a plurality of adsorption units, which adsorb the upper surface of the second substrate and lift the second substrate in order to separate the second substrate bonded to the first substrate; a negative pressure regulating unit, which individually controls the negative pressure of the plurality of adsorption units; and a processor, which forms a separation starting point on either side of the substrate bonding surface where the first substrate and the second substrate are bonded, and determines whether the substrates have been separated.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a control method thereof, which separates bonded substrates into single substrates spaced apart from each other. Background Technology

[0002] Recently, in order to improve productivity and reduce manufacturing costs, semiconductor manufacturing processes have shown a trend of increasing the diameter of substrates such as wafers and decreasing their thickness. Substrates with large diameters and thin thicknesses are prone to warping or damage during handling or surface polishing.

[0003] To prevent warping or damage to large and thin substrates during transport or polishing, a bonding substrate can be formed to bond the carrier substrate to the device substrate, the bonding substrate can be transported or polished, and then the carrier substrate can be separated from the device substrate.

[0004] A substrate processing apparatus for separating a carrier plate from a device substrate includes a lifting section that adsorbs and lifts the carrier plate.

[0005] However, in the prior art, there is a problem: after the separation initiation point of the substrate is formed, the crack propagation is uneven, and although multiple adsorption parts are adjusted, a constant peeling force cannot be confirmed.

[0006] If the peeling force or peeling speed cannot be controlled, the carrier board may be damaged or the device pattern may be damaged. Therefore, the magnitude and distribution of the suction force need to be finely adjusted during the process of separating and lifting the carrier board from the device substrate.

[0007] The background technology of this invention is disclosed in Korean Patent Publication No. 10-2014-0033327 (published on March 18, 2014, entitled: Method for separating product substrate from carrier plate). Summary of the Invention

[0008] Technical issues

[0009] The present invention is proposed to solve the above-mentioned problems. Its purpose is to provide a substrate processing apparatus and its control method, which individually adjusts the suction force of multiple adsorption parts of the adsorption substrate to improve the yield and speed of substrate separation operation.

[0010] Technical solution

[0011] A substrate processing apparatus according to one aspect of the present invention is characterized by comprising: a plurality of adsorption units, wherein the plurality of adsorption units adsorb the upper surface of the second substrate and lift the second substrate in order to separate the second substrate bonded to the first substrate; a negative pressure regulating unit, wherein the negative pressure of the plurality of adsorption units is individually controlled; and a processor, wherein a separation initiation point is formed on either side of the substrate bonding surface where the first substrate and the second substrate are bonded, and a determination is made as to whether the substrates have been separated.

[0012] In this invention, the processor controls the negative pressure adjustment unit to adjust the negative pressure of each adsorption unit based on the distance from the separation starting point of the first substrate and the second substrate, thereby causing the crack to propagate away from the separation starting point to separate the second substrate.

[0013] In this invention, the processor causes the separation component to penetrate either side of the substrate bonding surface where the first substrate and the second substrate are joined, to form a separation initiation point where the crack begins.

[0014] In this invention, the processor uses a laser to form a separation initiation point, starting with a crack, on either side of the substrate bonding surface where the first substrate and the second substrate are bonded.

[0015] In this invention, the feature is that it further includes: a plurality of displacement sensors, respectively disposed between the plurality of adsorption units; wherein, the processor determines whether the second substrate has been separated at the corresponding position of the displacement sensor based on the height of the second substrate detected by the displacement sensor.

[0016] In this invention, the feature is that it further includes: a force measuring element for detecting the force applied to the entire lifting section, the lifting section being provided with the plurality of adsorption sections and capable of lifting and lowering; wherein the processor performs a substrate separation success determination based on whether the force value measured by the force measuring element is within the error range of a specified force setting value.

[0017] In this invention, the feature is that it further includes: a plurality of force measuring elements, which are respectively disposed on the plurality of adsorption parts and individually detect the force applied to each adsorption part; wherein, when the measured value of the height of the rise after the second substrate is separated is lower than the specified height setting value, in order to increase the negative pressure of each adsorption part, the processor changes the force setting value of the independent force measuring element disposed on each adsorption part to a higher force setting value than the previous force setting value.

[0018] According to another aspect of the present invention, the control method of the substrate processing apparatus is characterized by comprising the following steps: in order to separate the second substrate bonded to the first substrate, the processor adjusts the negative pressure of each adsorption part based on the distance from the separation initiation point of the first substrate and the second substrate, thereby causing the crack to propagate in a direction away from the separation initiation point; and when the value measured for the height of the second substrate lifted by each adsorption part is lower than a specified height setting value, in order to increase the negative pressure of each adsorption part to lift it higher, the processor changes the force setting value of the independent force measuring element provided in each adsorption part to a higher force setting value than the previous force setting value.

[0019] In this invention, the characteristic is that, in the step of propagating the crack, the processor causes the separation component to penetrate either side of the substrate bonding surface where the first substrate and the second substrate are joined, to form the separation initiation point where the crack begins.

[0020] In this invention, the processor measures the height of the second substrate by means of multiple displacement sensors disposed between the plurality of adsorption portions in order to determine whether the measured value of the height of the second substrate is lower than a specified height setting value.

[0021] In this invention, the processor determines whether the second substrate has been separated at the corresponding position of the displacement sensor by comparing the measured value of the height of the second substrate with a specified height setting value.

[0022] In this invention, the following steps are included: in order to determine whether the second substrate bonded to the first substrate has been completely separated, the processor determines whether the force value measured by the force measuring element on the force applied to the entire lifting part is within the error range of the specified force setting value; wherein the lifting part is provided with the plurality of adsorption parts and is raised and lowered.

[0023] In this invention, the processor determines that the separation of the second substrate is successful when the force value measured by the force measuring element is within the error range of the specified force setting value.

[0024] In this invention, the step of changing the force setting value of the independent force measuring element provided in each adsorption part to a higher force setting value than before is characterized in that the processor repeatedly changes the force setting value of the independent force measuring element according to a specified number of repetitions.

[0025] Invention Effects

[0026] According to one aspect of the present invention, by individually adjusting the suction force of the plurality of adsorption portions included in the lifting portion corresponding to the direction and speed of the crack diffusion between the first substrate and the second substrate, the present invention can stably separate the first substrate and the second substrate and improve the yield and speed of the substrate separation operation. Attached Figure Description

[0027] Figure 1 This is a schematic diagram showing a simplified configuration of a substrate processing apparatus according to a first embodiment of the present invention.

[0028] Figure 2 This is a flowchart illustrating a control method for a substrate processing apparatus according to a first embodiment of the present invention.

[0029] Figure 3 This is a schematic diagram showing a simplified configuration of a substrate processing apparatus according to a second embodiment of the present invention.

[0030] Figure 4 This is a flowchart illustrating a control method for a substrate processing apparatus according to a second embodiment of the present invention.

[0031] Figure 5 It is used to explain in Figure 1 The diagram shows a method for separating a substrate by adjusting the adsorption force of multiple adsorption units according to the direction of substrate crack propagation.

[0032] Figure 6 It is used to explain in Figure 1 or Figure 3 A schematic diagram showing that the number of adsorption pads constituting each adsorption part can vary depending on the position of the adsorption part on the substrate. Detailed Implementation

[0033] An embodiment of the substrate processing apparatus and control method according to the present invention will now be described with reference to the accompanying drawings. In this process, for clarity and convenience, the thickness of lines or the size of constituent elements shown in the drawings may be exaggerated. Furthermore, the terminology used below is defined in consideration of the function in this invention and may vary depending on the intention or convention of the user or operator. Therefore, the definitions of these terms should be based on the entire contents of this specification.

[0034] Figure 1 This is a schematic diagram showing a simplified configuration of a substrate processing apparatus according to a first embodiment of the present invention. Figure 5 It is used to explain in Figure 1 The diagram shows a method for separating the substrate by sequentially adjusting the adsorption force of multiple adsorption units according to the direction of substrate crack propagation.

[0035] like Figure 1As shown, the substrate processing apparatus according to the first embodiment of the present invention includes a plurality of adsorption units 61 to 65, displacement sensors 81 to 84, force measuring element 90, negative pressure adjustment unit 110, displacement measuring unit 120, force measuring unit 130 and processor 140.

[0036] Reference Figure 1 According to the first embodiment of the present invention, the substrate processing apparatus separates the second substrate (e.g., carrier plate) 42 that is bonded (or joined) to the first substrate (e.g., device substrate) 41.

[0037] For example, the first substrate 41 may be a device substrate with fine circuits formed on its surface and diced in units of semiconductor chips, and the second substrate 42 may be a carrier plate to prevent the first substrate 41 from warping or being damaged.

[0038] At this time, the planar shape of the second substrate 6 can be circular.

[0039] The ring frame 10 is an annular component that surrounds the bonding substrate including the first substrate 41 and the second substrate 42 and is spaced apart from the first substrate 41 and the second substrate 42.

[0040] The adhesive tape 20 provides adhesive support to the lower side of the first substrate 41 and the lower side of the ring frame 10. The adhesive tape 20 is flexible and has a generally circular planar shape. The ring frame 10 is bonded to the outer periphery of the adhesive tape 20 to prevent the adhesive tape 20 from wrinkling or creasing.

[0041] The substrate support 30 can rise while adsorbing and fixing the bonding substrate. In this case, although not shown in the figure, the height of the upper end of the bonding substrate can be higher than the height of the upper end of the ring frame 10.

[0042] Separation components ( Figure 5 The kn1 in the figure can penetrate the adhesive portion 50 between the first substrate 41 and the second substrate 42 from one side of the bonding substrate, that is, from either side of the first substrate 41 and the second substrate 42, thereby forming a crack (see reference). Figure 5 ).

[0043] For example, the separating component kn1 can be a blade. The blade can move (extend) horizontally at the same height as the interface (or adhesive portion 50) between the first substrate 41 and the second substrate 42. The tip of the blade can be directed toward the interface (or adhesive portion 50) between the first substrate 41 and the second substrate 42.

[0044] Alternatively, the separation component kn1 can also use a laser instead of a blade.

[0045] Displacement sensors 81-84 are disposed between multiple adsorption sections 61-65 to measure the planar position and height of the second substrate 42 adsorbed by each adsorption section 61-65. As the second substrate 42 separates and rises, the distances t1-t4 measured by the displacement sensors 81-84 become shorter. Therefore, when the distances t1-t4 are shorter than the set values ​​T1-T4, it indicates that the second substrate 42 has separated.

[0046] The displacement measurement unit 120 collects the measurement values ​​detected by each displacement sensor 81 to 84.

[0047] The force measuring unit 130 measures the force before the second substrate 42 is separated and the force after the second substrate 42 is separated by the force measuring element 90.

[0048] Force measuring element 90 detects (measures) the force F applied to the entire lifting section 70.

[0049] For example, the force difference before and after the separation of the second substrate 42 can be measured by the force measuring element 90 to confirm that the second substrate 42 has been separated. That is, the force measuring element 90 measures the force (e.g., tensile force, pushing force) and outputs an electrical signal corresponding to the resistance value or force value. For example, the force measuring element 90 may include a load cell.

[0050] The processor 140 can determine the separation state of the second substrate 42 using the values ​​measured by the displacement measuring unit 120 and the force measuring element 90.

[0051] The processor 140 can form a separation initiation point where a crack begins on either side of the substrate bonding surface where the first substrate 41 and the second substrate 42 are bonded, and determine whether the substrates have separated.

[0052] The timing, height, and speed of lifting of the lifting unit 70 can be automatically controlled or controlled by the operator.

[0053] With the bonding substrate supported by the substrate support portion 30, the lifting portion 70 uses multiple adsorption portions 61 to 65 to adsorb the second substrate 42 and pull the second substrate 42 upward, so that the second substrate 42 is separated from the first substrate 41.

[0054] The lifting section 70 is disposed on the upper side of the second substrate 42. The lifting section 70 may include a plurality of adsorption sections 61 to 65 and a horizontal frame 101.

[0055] The lifting unit 70 may include a horizontal frame (not shown) for supporting a plurality of suction units 61-65. The horizontal frame (not shown) may, for example, be used like a crane to raise and lower the lifting unit 70 and move it in the horizontal direction.

[0056] Multiple adsorption portions 61-65 adsorb and lift the second substrate 42 upwards, widening the gap between the first substrate 41 and the second substrate 42, thereby separating the second substrate 42 from the first substrate 41; and as... Figure 5 As shown, the separating component kn1 is inserted into the adhesive portion 50 between the first substrate 41 and the second substrate 42 from one side of the bonding substrate, that is, from either side of the first substrate 41 and the second substrate 42, and slowly lifted from the part where the crack is formed, so that the crack expands (propagates) to the opposite side.

[0057] For example, such as Figure 5 As shown in ①, the adsorption forces of the multiple adsorption sections 61 to 65 are increased sequentially based on the distance from the side of the first substrate 41 and the second substrate 42 that the tip of the separation component kn1 first contacts (i.e., the separation starting point). (For example, the adsorption forces are increased sequentially from the adsorption section 61 that is closer to the adsorption section 61 to the adsorption section 65 that is farther away.) (Refer to ①) Figure 5 (①~⑥), thus the initially formed crack gradually expands (propagates) to the opposite side, while the second substrate 42 separates stably and rapidly.

[0058] In this embodiment, five adsorption sections 61 to 65 are used as an example. However, it should be noted that the number of adsorption sections is not limited to five. In other embodiments, fewer or more (e.g., two to four, or more than six) adsorption sections may be included.

[0059] It should be noted that, depending on the shape of the substrate (e.g., circular), each adsorption part 61-65 can be composed of a different number of adsorption pads (refer to the perspective view shown). Figure 6 ), but Figure 1 and Figure 3 In the diagram shown, the adsorption sections 61-65 are not visible because they are shown in cross-section.

[0060] For example, such as Figure 6 As shown, the first adsorption portion 61 and the fifth adsorption portion 65 formed at the edge of the substrate can each be composed of three adsorption pads, the second adsorption portion 62 and the fourth adsorption portion 64 can each be composed of four adsorption pads, and the third adsorption portion 63 formed at the center of the substrate can be composed of five adsorption pads.

[0061] However, it should be noted that, Figure 6 The number of adsorption pads constituting each adsorption part 61 to 65 shown is only to illustrate that the number of adsorption pads can vary depending on the shape of the substrate (i.e., depending on the position of each adsorption part on the substrate).

[0062] At this time, each adsorption pad constituting each adsorption part 61 to 65 is formed in the same manner. Referring to an adsorption pad formed in the first adsorption part 61, it may include a connecting part 61a at the upper end, an adsorption plate 61c at the lower end, and a bellows 61b between the connecting part 61a and the adsorption plate 61c, and an air intake path (not shown) that allows air to flow can be formed inside.

[0063] The connecting part 61a can be combined with the lower end of the channel beam (not shown) of the lifting part 70, and the adsorption plate 61c can make surface contact with the upper surface of the second substrate 42. The bellows 61b can include a plurality of pleats 61b' arranged in the vertical direction.

[0064] The bellows 61b can be elastically biased in the direction that reduces the spacing between the multiple folds 61b'.

[0065] Therefore, the length of the first adsorption part 61 in the vertical direction can undergo elastic deformation.

[0066] In other words, when a force is applied to the first adsorption part 61 to increase the distance between the connecting part 61a and the adsorption plate 61c, the bellows 16b can undergo elastic deformation, thereby increasing the interval between the multiple pleats 61b' and elongating the length of the first adsorption part 61. In this state, when the force applied to the first adsorption part 61 is removed, the bellows 61b can elastically recover, reducing the interval between the multiple pleats 61b' and shrinking the length of the first adsorption part 61 back to its original state.

[0067] The negative pressure regulating unit 110 regulates the negative pressure distributed to the multiple adsorption units 61 to 65 respectively, and thus forms a negative pressure flow path that can be connected in a way that allows air to flow independently.

[0068] For example, the negative pressure regulating unit 110 can use a vacuum pump (not shown) to generate negative pressure, thereby adjusting the negative pressure of each adsorption unit 61 to 65 respectively. For example, the negative pressure can be gradually increased from the first adsorption unit 61, where the crack first begins to form, to the last adsorption unit 65, corresponding to the direction and speed of crack propagation (propagation).

[0069] The method for separating a bonding substrate using a substrate processing apparatus according to a first embodiment of the present invention will now be described.

[0070] Figure 2 This is a flowchart illustrating a control method for a substrate processing apparatus according to a first embodiment of the present invention.

[0071] Reference Figure 2When the bonding substrate (i.e., the substrate formed by bonding the first substrate 41 and the second substrate 42 together) is put into the substrate processing device (S101), the processor 140 adsorbs and fixes the first substrate 41 of the bonding substrate through the substrate support 30 (S102), raises the substrate support 30 to a designated position (S103), and lowers the lifting part 70 to a designated position (S104).

[0072] The designated position of the substrate support portion 30 is a position where the end of the separating component kn1 is at the same height as the boundary region (i.e., the adhesive portion 50) of the first substrate 41 and the second substrate 42, and is higher than the ring frame 10.

[0073] Furthermore, the designated position of the lifting part 70 is the position where it can contact the upper surface of the second substrate 42 when the plurality of adsorption parts 61 to 65 are extended.

[0074] When the lifting part 70 descends to the designated position and the adsorption parts 61-65 contact the second substrate 42 (S105), the processor 140 adsorbs the first adsorption part 61, which is closest to the crack initiation point (i.e., the separation initiation point), onto the second substrate 42 (S106), and inserts the separation member kn1 to the crack initiation point (i.e., a designated side of the first substrate 41 and the second substrate 42) to a designated depth (e.g., 1mm-5mm), thereby forming a crack (see reference). Figure 5 (①)(S107).

[0075] At this time, the adsorption force of the first adsorption section 61 can be adjusted (for example, 20 to 100%) to a preset value.

[0076] After a crack is formed at the crack initiation point (i.e., the separation initiation point), the processor 140 attaches the adsorption part (i.e., the second adsorption part 62) corresponding to the next sequence of crack propagation direction to the second substrate 42, and adjusts the adsorption force of the first adsorption part 61 and the second adsorption part 62 to a preset value (e.g., 20 to 100%) respectively (S108).

[0077] That is, the adsorption force of the first adsorption part 61 and the second adsorption part 62 can be continuously adjusted (e.g., 20 to 100%) according to the degree of separation of the second substrate 42.

[0078] Then, if the distance t1 of the second substrate 42 measured by the first displacement sensor 81 within the preset time is closer than the set value T1, it is determined that the second substrate 42 has been successfully separated at the corresponding position; if the distance t1 of the second substrate 42 measured by the first displacement sensor 81 within the preset time is not close to the set value T1, the adsorption force of the first adsorption part 61 and the second adsorption part 62 is repeatedly and continuously adjusted (S108~S109).

[0079] Even if the adsorption force of the first adsorption part 61 and the second adsorption part 62 is repeatedly adjusted according to the specified number of repetitions, and the substrate still fails to separate, the substrate separation process is stopped; if the substrate is successfully separated, the next step is performed.

[0080] When the substrate separation process performed by the first adsorption unit 61 and the second adsorption unit 62 is successful (S109 "Yes"), the processor 140 attaches the adsorption unit (i.e. the third adsorption unit 63) corresponding to the next sequence of crack propagation direction to the second substrate 42, and adjusts the adsorption force of the first to third adsorption units 61 to 63 respectively (e.g. 20 to 100%) to a preset value (S110).

[0081] That is, the adsorption force of the first to third adsorption portions 61 to 63 can be continuously adjusted (e.g., 20 to 100%) according to the degree of separation of the second substrate 42.

[0082] Then, if the distance t2 of the second substrate 42 measured by the second displacement sensor 82 within the preset time is closer than the set value T2, it is determined that the second substrate 42 has been successfully separated at the corresponding position; if the distance t2 of the second substrate 42 measured by the second displacement sensor 82 within the preset time is not close to the set value T2, the adsorption force of the first to third adsorption parts 61 to 63 is repeatedly and continuously adjusted (S110 to S111).

[0083] Even if the adsorption force of the first to third adsorption sections 61 to 63 is repeatedly adjusted according to the specified number of repetitions, and the substrate still fails to separate, the substrate separation process is stopped; if the substrate is successfully separated, the next step is performed.

[0084] When the substrate separation process performed by the first to third adsorption units 61 to 63 is successful (S111 "Yes"), the processor 140 attaches the adsorption unit (i.e. the fourth adsorption unit 64) corresponding to the next sequence of crack propagation direction to the second substrate 42, and adjusts the adsorption force of the first to fourth adsorption units 61 to 64 respectively (e.g. 20 to 100%) to a preset value (S112).

[0085] That is, the adsorption force of the first to fourth adsorption sections 61 to 64 can be continuously adjusted (e.g., 20 to 100%) according to the degree of separation of the second substrate 42.

[0086] Then, if the distance t3 of the second substrate 42 measured by the third displacement sensor 83 within the preset time is closer than the set value T3, it is determined that the second substrate 42 has been successfully separated at the corresponding position; if the distance t3 of the second substrate 42 measured by the third displacement sensor 83 within the preset time is not close to the set value T3, the adsorption force of the first to fourth adsorption parts 61 to 64 is repeatedly and continuously adjusted (S112 to S113).

[0087] Even if the substrate separation fails after repeatedly adjusting the adsorption force of the first to fourth adsorption sections 61 to 64 according to the specified number of repetitions, the substrate separation process is stopped; if the substrate separation is successful, the next step is performed.

[0088] When the substrate separation process performed by the first to fourth adsorption units 61 to 64 is successful (S113 "Yes"), the processor 140 attaches the adsorption unit (i.e. the fifth adsorption unit 65) corresponding to the next sequence of crack propagation direction to the second substrate 42, and adjusts the adsorption force of the first to fifth adsorption units 61 to 65 (e.g. 20 to 100%) to a preset value (S114).

[0089] That is, the adsorption force of the first to fifth adsorption sections 61 to 65 can be continuously adjusted (e.g., 20 to 100%) according to the degree of separation of the second substrate 42.

[0090] Then, if the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 within the preset time is closer than the set value T4, it indicates that the second substrate 42 has been successfully separated at the corresponding position; if the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 within the preset time is not close to the set value T4, the adsorption force of the first to fifth adsorption parts 61 to 65 is repeatedly and continuously adjusted (S114 to S115).

[0091] At this time, when the substrate separation process performed by the first to fifth adsorption sections 61 to 65 is successful (S115 "Yes"), if the value F measured by the force measuring element 90, which measures the force F applied to the entire lifting section 70, is within the error range of the specified set value TF (e.g. 0±10N) (S116 "Yes"), then the processor 140 finally determines that the substrate has been successfully separated.

[0092] That is, since there is no displacement sensor after the last adsorption section (i.e., the fifth adsorption section 65), the force measuring element 90 plays the role of replacing the displacement sensor to finally confirm whether the second substrate 42 has been completely separated.

[0093] Therefore, although not shown in the figure, if the value F measured by the force measuring element 90 does not fall within the error range of the specified set value TF (e.g., 0±10N), the adsorption force of at least one of the first to fifth adsorption parts 61 to 65 can be repeatedly and continuously adjusted.

[0094] However, if the substrate still fails to separate even after repeatedly adjusting the adsorption force of the first to fifth adsorption sections 61 to 65 according to the specified number of repetitions ("No" in S116), the substrate separation process is stopped; if the substrate separation is successful, the next step is performed.

[0095] At this point, the number of repetitions used to adjust the adsorption force can be adjusted.

[0096] Furthermore, when the final determination is that the separation is successful (i.e., the substrate separation is successful) (S116 "Yes"), the processor 140 raises the lifting section 70 (S116) and removes the first substrate 41 and the second substrate 42 (S117).

[0097] It should be noted that this embodiment is described using five adsorption sections 61 to 65 as an example, but it should be noted that the number of adsorption sections is not limited to five. In other embodiments, fewer or more (e.g., two to four, or more than six) adsorption sections may be included.

[0098] On the other hand, in reference Figure 1 and Figure 2 In the first embodiment described, displacement sensors 81-84 arranged between multiple adsorption parts 61-65 are used to check whether the second substrate 42 has been separated. In the structure, no displacement sensor is arranged after the last adsorption part (i.e. the fifth adsorption part 65), so a force measuring element 90 is used instead of a displacement sensor to finally confirm whether the second substrate 42 has been completely separated.

[0099] Figure 3 This is a schematic diagram showing a simplified configuration of a substrate processing apparatus according to a second embodiment of the present invention.

[0100] like Figure 3 As shown, the substrate processing apparatus according to the second embodiment of the present invention includes a plurality of adsorption units 61 to 65, displacement sensors 81 to 84, force measuring elements 90 to 95, a negative pressure regulating unit 110, a displacement measuring unit 120, a force measuring unit 130, and a processor 140.

[0101] Reference Figure 3 According to the second embodiment of the present invention, the substrate processing apparatus is the same as that according to the first embodiment, and separates the second substrate (e.g., carrier plate) 42 that is bonded (or joined) to the first substrate (e.g., device substrate) 41.

[0102] but, Figure 3 The substrate processing apparatus shown according to the second embodiment of the present invention differs from that of the first embodiment in that, in addition to the overall force measuring element 90 described in the first embodiment, independent force measuring elements 91 to 95 are additionally provided, which are respectively installed on the plurality of adsorption parts 61 to 65.

[0103] Accordingly, the force measuring unit 130 measures the force at each position adsorbed by the multiple adsorption units 61 to 65 before the second substrate 42 is separated and the force after the second substrate 42 is separated, using the overall force measuring element 90 and the independent force measuring elements 91 to 95.

[0104] The force measuring elements 91 to 95 measure forces (e.g., tensile force, thrust force) and output electrical signals corresponding to the resistance or force value. For example, the force measuring elements 91 to 95 may include load cells.

[0105] The processor 140 can more accurately determine the separation state of the second substrate 42 by using the values ​​measured by the displacement measuring unit 120, the overall force measuring element 90, and the independent force measuring elements 91 to 95.

[0106] On the other hand, although the operation of each of the above-described constituent elements 110 to 140 has been described in this embodiment to help understand the above-described constituent elements 110 to 140, it should be noted that, according to the embodiment, they can also be integrated into the processor 140.

[0107] In the following text, descriptions of components that are repeated with those in the first embodiment (such as the negative pressure adjustment unit and the displacement measurement unit) will be omitted for ease of explanation.

[0108] The method for separating a bonding substrate using a substrate processing apparatus according to a second embodiment of the present invention will now be described.

[0109] Figure 4 This is a flowchart illustrating a control method for a substrate processing apparatus according to a second embodiment of the present invention.

[0110] Reference Figure 4 When the bonding substrate (i.e., the substrate formed by bonding the first substrate 41 and the second substrate 42 together) is put into the substrate processing device (S201), the processor 140 adsorbs and fixes the first substrate 41 of the bonding substrate through the substrate support 30 (S202), raises the substrate support 30 to a designated position (S203), and lowers the lifting part 70 to a designated position (S204).

[0111] The designated position of the substrate support portion 30 is a position where the end of the separating member kn1 is at the same height as the boundary region (i.e., the adhesive portion 50) of the first substrate 41 and the second substrate 42, and is higher than the ring frame 10. Furthermore, the designated position of the lifting portion 70 is a position where it can contact the upper surface of the second substrate 42 when the plurality of adsorption portions 61 to 65 extend.

[0112] When the lifting part 70 descends to the designated position and the adsorption parts 61-65 contact the second substrate 42 (S205), the processor 140 adjusts the negative pressure (adsorption force) of the first adsorption part 61, which is closest to the crack initiation position (i.e., the separation initiation point), in conjunction with the force value set in the first force measuring element 91, so that the first adsorption part 61 adsorbs onto the second substrate 42 (S206), and inserts the separation member kn1 to the crack initiation position (i.e., a designated side of the first substrate 41 and the second substrate 42) to a designated depth (e.g., 1mm-5mm), thereby forming a crack (see reference). Figure 5 ①)(S207).

[0113] At this time, the negative pressure (adsorption force) of the first adsorption section 61 is adjusted in accordance with the force value set in the first force measuring element 91 at the beginning (S208).

[0114] Then, when a crack is formed at the crack initiation point (i.e., the separation initiation point), the crack propagates under the adsorption force of the first adsorption part 61. As a result, when the distance t1 of the second substrate 42 measured by the first displacement sensor 81 is closer than the set value T1 within a preset time (S209 "Yes"), the processor 140 determines that the second substrate 42 has been successfully separated at the corresponding position. When the distance t1 of the second substrate 42 measured by the first displacement sensor 81 is not close to the set value T1 within a preset time (S209 "No"), the processor 140 repeatedly and continuously changes the set value of the first force measuring element 91 (for example, by increasing the set value) (S208 to S209).

[0115] That is, when the set value of the first force measuring element 91 is increased, the processor 140 increases the negative pressure (adsorption force) of the first adsorption section 61.

[0116] On the other hand, if the distance t1 of the second substrate 42 measured by the first displacement sensor 81 within a preset time is closer than the set value T1 ("Yes" in S209), the processor 140, while maintaining the negative pressure (adsorption force) of the first adsorption part 61, causes the adsorption part (i.e. the second adsorption part 62) corresponding to the next sequence in the crack propagation direction to be attached to the second substrate 42, and adjusts the adsorption force of the second adsorption part 62 in accordance with the force value set in the second force measuring element 92, so that the second adsorption part 62 is adsorbed onto the second substrate 42 (S210).

[0117] At this time, the negative pressure (adsorption force) of the second adsorption section 62 is adjusted initially in accordance with the force value set in the second force measuring element 92 (S210).

[0118] Then, the crack propagates under the adsorption force of the second adsorption part 62. When the distance t2 of the second substrate 42 measured by the second displacement sensor 82 is closer than the set value T2 within a preset time (S211 "Yes"), the processor 140 determines that the second substrate 42 has been successfully separated at the corresponding position. When the distance t2 of the second substrate 42 measured by the second displacement sensor 82 is not close to the set value T2 within a preset time (S211 "No"), the processor 140 repeatedly and continuously changes the set value of the second force measuring element 92 (for example, by increasing the set value) (S210 to S211).

[0119] That is, when the set value of the second force measuring element 92 is increased, the processor 140 increases the negative pressure (adsorption force) of the second adsorption section 62.

[0120] On the other hand, if the distance t2 of the second substrate 42 measured by the second displacement sensor 82 within a preset time is closer than the set value T2 ("Yes" in S211), the processor 140, while maintaining the negative pressure (adsorption force) of the second adsorption part 62, causes the adsorption part (i.e. the third adsorption part 63) corresponding to the next sequence in the crack propagation direction to be attached to the second substrate 42, and adjusts the adsorption force of the third adsorption part 63 in accordance with the force value set in the third force measuring element 93, so that the third adsorption part 63 is adsorbed onto the second substrate 42 (S212).

[0121] At this time, the negative pressure (adsorption force) of the third adsorption section 63 is adjusted initially in accordance with the force value set in the third force measuring element 93 (S212).

[0122] Then, the crack propagates under the adsorption force of the third adsorption part 63. When the distance t3 of the second substrate 42 measured by the third displacement sensor 83 is closer than the set value T3 within a preset time (S213 "Yes"), the processor 140 determines that the second substrate 42 has been successfully separated at the corresponding position. When the distance t3 of the second substrate 42 measured by the third displacement sensor 83 within a preset time is not close to the set value T3 (S213 "No"), the processor 140 repeatedly and continuously changes the set value of the third force measuring element 93 (for example, by increasing the set value) (S212 to S213).

[0123] That is, when the set value of the third force measuring element 93 is increased, the processor 140 increases the negative pressure (adsorption force) of the third adsorption section 63.

[0124] On the other hand, if the distance t3 of the second substrate 42 measured by the third displacement sensor 83 within a preset time is closer than the set value T3 ("Yes" in S213), the processor 140, while maintaining the negative pressure (adsorption force) of the third adsorption part 63, causes the adsorption part (i.e. the fourth adsorption part 64) corresponding to the next sequence in the crack propagation direction to be attached to the second substrate 42, and adjusts the adsorption force of the fourth adsorption part 64 in accordance with the force value set in the fourth force measuring element 94, so that the fourth adsorption part 64 is adsorbed onto the second substrate 42 (S214).

[0125] At this time, the negative pressure (adsorption force) of the fourth adsorption section 64 is adjusted initially in accordance with the force value set in the fourth force measuring element 94 (S214).

[0126] Then, the crack propagates under the adsorption force of the fourth adsorption unit 63. When the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 is closer than the set value T4 within a preset time (S215 "Yes"), the processor 140 determines that the second substrate 42 has been successfully separated at the corresponding position. When the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 is not close to the set value T4 within a preset time (S215 "No"), the processor 140 repeatedly and continuously changes the set value of the fourth force measuring element 94 (for example, by increasing the set value) (S214 to S215).

[0127] That is, when the set value of the fourth force measuring element 94 is increased, the processor 140 increases the negative pressure (adsorption force) of the fourth adsorption unit 64.

[0128] On the other hand, if the distance t4 of the second substrate 42 measured by the fourth displacement sensor 84 within a preset time is closer than the set value T4 ("Yes" in S215), the processor 140, while maintaining the negative pressure (adsorption force) of the fourth adsorption part 64, causes the adsorption part (i.e. the fifth adsorption part 65) corresponding to the next sequence in the crack propagation direction to be attached to the second substrate 42, and adjusts the adsorption force of the fifth adsorption part 65 in accordance with the force value set in the fifth force measuring element 95, so that the fifth adsorption part 65 is adsorbed onto the second substrate 42 (S216).

[0129] At this time, the negative pressure (adsorption force) of the fifth adsorption section 65 is adjusted initially in accordance with the force value set in the fifth force measuring element 95 (S216).

[0130] Then, the crack propagates under the adsorption force of the fifth adsorption section 65. Since there is no displacement sensor after the last adsorption section (i.e., the fifth adsorption section 65), the processor 140 maintains the negative pressure (adsorption force) of the fifth adsorption section 65 in accordance with the force value set in the fifth force measuring element 95. If the value F measured by the force measuring element 90, which measures the force F applied to the entire lifting section 70, is within the error range of the specified set value TF (e.g., 0 ± 10 N) (S217 "Yes"), then it is finally determined that the peeling is successful (i.e., the substrate is successfully separated).

[0131] That is, the force measuring element 90 serves to replace the displacement sensor in confirming whether the second substrate 42 has been completely separated.

[0132] Accordingly, although not shown in the figure, if the value F measured by the force measuring element 90 does not fall within the error range of the specified set value TF (e.g., 0 ± 10 N), the set value of the fifth force measuring element 95 is repeatedly and continuously changed (e.g., the set value is increased) (S216 to S217).

[0133] That is, when the set value of the fifth force measuring element 95 is increased, the processor 140 increases the negative pressure (adsorption force) of the fifth adsorption section 65.

[0134] However, if the substrate separation process fails even after repeatedly adjusting the adsorption force of the fifth adsorption section 65 by changing the setting value of the fifth force measuring element 95 according to the specified number of repetitions, the substrate separation process is stopped; if the substrate separation is successful, the next step is performed.

[0135] At this point, the number of repetitions used to adjust the adsorption force can be adjusted.

[0136] Furthermore, when the final determination is that the separation is successful (i.e., the substrate separation is successful), the processor 140 raises the lifting section 70 (S218) and removes the first substrate 41 and the second substrate 42 (S219).

[0137] It should be noted that this embodiment is described using five adsorption sections 61 to 65 as an example, but it should be noted that the number of adsorption sections is not limited to five. In other embodiments, fewer or more (e.g., two to four, or more than six) adsorption sections may be included.

[0138] As described above, the present invention individually adjusts the suction force of the multiple adsorption units included in the lifting section according to the direction and speed of the crack propagation between the first substrate and the second substrate, thereby achieving the following effects: enabling the first substrate and the second substrate to be stably separated, and improving the yield and speed of the substrate separation operation.

[0139] While the present invention has been described with reference to the embodiments shown in the accompanying drawings, these are merely examples, and those skilled in the art will understand that various modifications and equivalent embodiments can be made therefrom. Therefore, the scope of protection of the present invention should be determined by the appended claims. Furthermore, the implementations described in this specification can be implemented, for example, by methods or processes, apparatus, software programs, data streams, or signals. Even if discussed only in a single implementation context (e.g., discussed only as a method), the implementation of the discussed features can be implemented in other forms (e.g., apparatus or program). Apparatus can be implemented by suitable hardware, software, and firmware. Methods can be implemented, for example, in apparatuses such as processors, which generally refer to processing devices including computers, microprocessors, integrated circuits, or programmable logic devices. Processors also include communication devices such as computers, cellular phones, portable information terminals / personal digital assistants (PDAs), and other devices that facilitate information communication between end users.

Claims

1. A substrate processing apparatus, characterized in that, include: Multiple adsorption sections are provided to separate the second substrate, which is bonded to the first substrate, by adsorbing the upper surface of the second substrate and lifting the second substrate. The negative pressure regulating unit controls the negative pressure of the plurality of adsorption units individually; as well as The processor forms a separation initiation point on either side of the substrate bonding surface where the first substrate and the second substrate are bonded, and determines whether the substrates have separated.

2. The substrate processing apparatus according to claim 1, characterized in that, The processor controls the negative pressure adjustment unit to adjust the negative pressure of each adsorption unit based on the distance from the separation starting point of the first substrate and the second substrate, so that the cracks propagate away from the separation starting point to separate the second substrate.

3. The substrate processing apparatus according to claim 1, characterized in that, The processor causes the separation component to penetrate either side of the substrate bonding surface where the first substrate and the second substrate are joined, to form a separation initiation point where the crack begins.

4. The substrate processing apparatus according to claim 1, characterized in that, The processor uses a laser to create a separation initiation point, starting with a crack, on either side of the substrate bonding surface where the first and second substrates are joined.

5. The substrate processing apparatus according to claim 1, characterized in that, Also includes: Multiple displacement sensors are respectively disposed between the multiple adsorption units; The processor determines whether the second substrate has been separated at the corresponding position of the displacement sensor based on the height of the second substrate detected by the displacement sensor.

6. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes: A force measuring element detects the force applied to the entire lifting section, which is provided with the plurality of adsorption sections and moves up and down; The processor determines whether the substrate separation is successful based on whether the force value measured by the force measuring element is within the error range of the specified force setting value.

7. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes: Multiple force measuring elements are respectively disposed on the multiple adsorption parts and the force applied to each adsorption part is detected individually; When the measured height of the second substrate after separation is lower than the specified height setting value, in order to increase the negative pressure of each adsorption part, the processor changes the force setting value of the independent force measuring element set in each adsorption part to a higher force setting value than before.

8. A control method for a substrate processing apparatus, characterized in that, Includes the following steps: In order to separate the second substrate bonded to the first substrate, the processor adjusts the negative pressure of each adsorption portion based on the distance from the separation initiation point of the first and second substrates, thereby causing the crack to propagate away from the separation initiation point; and When the measured height of the second substrate lifted by each adsorption unit is lower than the specified height setting value, in order to increase the negative pressure of each adsorption unit to lift it higher, the processor changes the force setting value of the independent force measuring element provided in each adsorption unit to a higher force setting value than before.

9. The control method of the substrate processing apparatus according to claim 8, characterized in that, In the step of propagating the crack, the processor causes the separation component to penetrate either side of the substrate bonding surface where the first substrate and the second substrate are joined, to form the separation initiation point where the crack begins.

10. The control method of the substrate processing apparatus according to claim 8, characterized in that, In order to determine whether the measured value of the height of the second substrate is lower than the specified height setting value, the processor measures the height of the second substrate by means of multiple displacement sensors respectively disposed between the plurality of adsorption parts.

11. The control method of the substrate processing apparatus according to claim 10, characterized in that, By comparing the measured height of the second substrate with a specified height setting, the processor determines whether the second substrate has separated at the corresponding position of the displacement sensor.

12. The control method of the substrate processing apparatus according to claim 8, characterized in that, To determine whether the second substrate, which is bonded to the first substrate, has been completely separated, the control method of the substrate processing apparatus further includes the following steps: The processor determines whether the force value measured by the force measuring element on the force applied to the entire lifting section is within the error range of the specified force setting value; wherein, the lifting section is provided with the plurality of adsorption sections and performs lifting and lowering.

13. The control method for the substrate processing apparatus according to claim 12, characterized in that, When the force value measured by the force measuring element is within the error range of the specified force setting value, the processor finally determines that the separation of the second substrate is successful.

14. The control method of the substrate processing apparatus according to claim 8, characterized in that, In the step of changing the force setting value of the independent force measuring element provided in each adsorption part to a higher force setting value than before, the processor repeatedly changes the force setting value of the independent force measuring element according to a specified number of repetitions.

Images