Organic semiconductor device

Abstract

An organic semiconductor device capable of suppressing degradation caused by moisture or the like is provided. An organic semiconductor device (100) includes: a first substrate (1) and a second substrate (2), each having one side facing each other and configured to be spaced apart; and a sealing member (3) disposed between the first substrate and the second substrate and configured to surround a space (20) defined between the first substrate and the second substrate; at least one first element (10-14) comprising an organic semiconductor film is disposed within the space and on one side of the first substrate, and at least one second element (15-17) is disposed within the space and on one side of the second substrate.

Description

Technical Field

[0001] This invention relates to an organic semiconductor device. Background Technology

[0002] Japanese Patent Application Publication No. 2023-030471 (Patent Document 1) discloses a detection device comprising: a substrate; a plurality of photodiodes disposed on the substrate; a plurality of transistors disposed corresponding to the plurality of photodiodes; a plurality of gate lines extending in a first direction; a plurality of signal lines extending in a second direction intersecting the first direction; a plurality of lower electrodes disposed between the transistors and photodiodes in a direction perpendicular to the substrate, and disposed corresponding to the plurality of photodiodes; an upper electrode disposed across the plurality of photodiodes; and a reflective layer disposed between the substrate and photodiodes in a direction perpendicular to the substrate.

[0003] The aforementioned detection device has a structure in which photodiodes and transistors are mounted on the same substrate. Therefore, in actual commercialization, surface treatment such as applying a passivation film to the substrate is required. However, when photodiodes and transistors are formed using organic materials, they are prone to degradation due to moisture and oxygen, and it is believed that the aforementioned passivation film is insufficient to suppress the intrusion of moisture and oxygen from the outside.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2023-030471 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] One of the objectives of this invention is to provide an organic semiconductor device capable of suppressing degradation caused by moisture or the like.

[0009] Methods for solving problems

[0010] One aspect of this disclosure of an organic semiconductor device includes: The first substrate and the second substrate, each with one side facing each other, are configured to be spaced apart from each other; and A sealing member is disposed between the first substrate and the second substrate, and is configured to surround the space defined between the first substrate and the second substrate. Within the space and on one side of the first substrate, at least one first element comprising an organic semiconductor film is disposed. At least one second element is provided within the space and on one side of the second substrate.

[0011] Based on the above structure, an organic semiconductor device that can suppress degradation caused by moisture and other factors can be provided. Attached Figure Description

[0012] [ Figure 1 ] Figure 1 This is a schematic cross-sectional view showing the structure of the organic semiconductor device according to the first embodiment.

[0013] [ Figure 2 ] Figure 2 This is a schematic cross-sectional view showing the structure of the organic semiconductor device according to the second embodiment.

[0014] [ Figure 3 ] Figure 3 This is a schematic cross-sectional view showing the structure of the organic semiconductor device according to the third embodiment.

[0015] [ Figure 4 ] Figure 4 (A) ~ Figure 4 (D) is a schematic cross-sectional view illustrating the manufacturing method of the organic semiconductor device 100a.

[0016] [ Figure 5 ] Figure 5 (A) Figure 5 (B) is a schematic top view illustrating the manufacturing method of the organic semiconductor device 100a.

[0017] [ Figure 6 ] Figure 6 (A) Figure 6 (B) is a schematic top view illustrating the manufacturing method of the organic semiconductor device 100a.

[0018] [ Figure 7 ] Figure 7 (A) and Figure 7 (B) are diagrams showing the structure of the organic semiconductor device and circuit structure examples of the embodiments. Detailed Implementation

[0019] (First Implementation)

[0020] Figure 1This is a schematic cross-sectional view showing the structure of the organic semiconductor device according to the first embodiment. The organic semiconductor device 100 of the first embodiment includes a thin-film transistor (first element) and a photodiode (second element) for detecting light. Both the photodiode and the thin-film transistor are constructed using organic materials. The thin-film transistor is constructed including a gate electrode 10, an insulating film 11, source / drain electrodes 12 and 13, and an organic semiconductor film 14 (shown by the dashed ellipse in the figure). The photodiode includes a transparent electrode 15, an active layer 16, and an electrode 17.

[0021] The first substrate 1 is, for example, a glass substrate or a resin substrate. The first substrate 1 may also be configured as a film. The first substrate 1 may be a transparent substrate or a non-transparent substrate. The aforementioned thin-film transistor is disposed on one side of the first substrate 1 (the side opposite to the second substrate 2). Therefore, as the first substrate 1, a substrate with heat resistance at least sufficient to withstand the temperature during the manufacturing process of the thin-film transistor is used.

[0022] The second substrate 2 is, for example, a film-like resin substrate. In this embodiment, the second substrate 2 is a substrate with a thickness thinner than the first substrate 1. The aforementioned photodiode is disposed on one side of the second substrate 2 (the side facing the first substrate 1). Therefore, the second substrate 2 is a substrate with heat resistance sufficient to withstand the temperatures during the manufacturing process of the photodiode. Furthermore, in this embodiment, light is incident on the photodiode via the second substrate 2; therefore, the second substrate 2 is a substrate with high transmittance, at least for the wavelength of the light being detected. By making both the first substrate 1 and the second substrate 2 thin films, a flexible organic semiconductor device can be provided.

[0023] The sealing member 3 is disposed between one side of the first substrate 1 and the second substrate in a manner that surrounds the aforementioned photodiode and thin-film transistor. The sealing member 3 includes a spacer for maintaining a certain distance (e.g., several μm) between the one side of the first substrate 1 and the second substrate 2. The sealing member 3, together with the first substrate 1 and the second substrate 2, seals the space 20 between the first substrate 1 and the second substrate, i.e., the space 20 containing the photodiode and the thin-film transistor, relative to the outside. As the sealing member 3, for example, a sealing member made of a photocurable or thermocurable epoxy resin, the same material used in liquid crystal elements, can be used.

[0024] The gate electrode 10 is an electrode that functions as the gate of a thin-film transistor and is disposed on one side of the first substrate 1. The length and width of the gate electrode 10 can be appropriately set according to the performance required for use as a thin-film transistor. The gate electrode 10 can be obtained, for example, by patterning a transparent conductive film such as ITO (indium tin oxide) film or a metal film such as gold into a predetermined shape. In addition, although not shown in the figure, wiring is appropriately connected to the gate electrode 10.

[0025] An insulating film 11 is provided to cover the gate electrode 10 on one side of the first substrate 1. This insulating film 11 functions as a gate insulating film for a thin-film transistor, and can be, for example, an insulating film formed using organic materials or an insulating film formed using inorganic materials such as SiN or SiO2. The relative permittivity and film thickness of the insulating film 11 can be appropriately set according to the performance required for use as a thin-film transistor. If the insulating film 11 is formed using an organic material, it can be formed, for example, by coating an organic material on one side of the first substrate 1 and drying it. Alternatively, if the insulating film 11 is formed using an inorganic material, it can be formed using film deposition methods such as sputtering or CVD.

[0026] Source / drain electrodes 12 and 13 are disposed on one side of the insulating film 11 (the side facing the second substrate 2), and are arranged such that a portion of each overlaps with the gate electrode 10 when viewed from above. A gap is provided between the source / drain electrodes 12 and 13. This gap is positioned to overlap with the gate electrode 10 when viewed from above. The source / drain electrodes 12 and 13 are electrodes used to function as the source / drain of a thin-film transistor. The source / drain electrodes 12 and 13 can be obtained by patterning a transparent conductive film, such as an ITO (indium tin oxide) film, or a metal film, such as gold, into a predetermined shape. Furthermore, although not shown in the figure, wiring is appropriately connected to the source / drain electrodes 12 and 13.

[0027] The organic semiconductor film 14 is disposed at a position that overlaps with the gate electrode 10 and is respectively connected to the source / drain electrodes 12 and 13 when viewed from above. The organic semiconductor film 14 can be formed, for example, by coating an organic semiconductor material using a coating method such as inkjet printing. The film thickness, mobility, etc., of the organic semiconductor film 14 can be appropriately set according to the performance required for use as a thin-film transistor. Furthermore, as described later... Figure 2 As shown, a protective film 19 covering the organic semiconductor film 14 can also be provided.

[0028] A transparent electrode 15 is disposed on one side of the second substrate 2. The transparent electrode 15 can be obtained, for example, by patterning a transparent conductive film such as an ITO (indium tin oxide) film into a predetermined shape. In addition, although not shown in the figure, wiring is appropriately connected to the transparent electrode 15.

[0029] An active layer 16 is disposed between the transparent electrode 15 and the electrode 17. This active layer 16 is used to generate an electromotive force by light incident from the outside via the second substrate 2 and the transparent electrode 15. Furthermore, while details are omitted here, functional layers such as a carrier injection layer, a carrier blocking layer, and a transport layer may be appropriately disposed between the active layer 16 and the transparent electrode 15, and between the active layer 16 and the electrode 17, respectively.

[0030] Electrode 17 is positioned opposite to transparent electrode 15, separated by active layer 16. Electrode 17 can be obtained, for example, by patterning a metal film such as aluminum film.

[0031] A conductive member 18 is disposed between one side of the first substrate 1 and the second substrate 2, respectively, in connection with the source / drain electrodes 13 of the thin-film transistor and the electrode 17 of the photodiode. For example, a material such as silver paste can be used as the conductive member 18. Alternatively, a resin containing gold-coated gap members (microspheres) or an anisotropic conductive adhesive film can also be used as the conductive member 18. This conductive member 18 is positioned between the source / drain electrodes 13 and the electrode 17, thereby electrically and physically connecting the thin-film transistor disposed on the first substrate 1 and the photodiode disposed on the second substrate 2.

[0032] The organic semiconductor device 100 of the first embodiment has the above-described structure, and its operation will be described below. Light incident from the outside is detected by a photodiode disposed on the second substrate 2. At this time, by applying a predetermined voltage to the gate electrode 10 of the thin-film transistor disposed on the first substrate 1, conduction is achieved between the source / drain electrodes 12 and 13, enabling the photocurrent from the photodiode to be output to the outside. By observing the output waveform of this photocurrent, various information can be obtained.

[0033] In addition, Figure 1 For simplicity, a pair of one thin-film transistor and one photodiode is shown, but multiple thin-film transistors and photodiodes can also be arranged between the first substrate 1 and the second substrate 2. In this case, for example, by arranging the thin-film transistors and photodiodes in a matrix shape when viewed from above, planar light information (time variation) can be obtained. Regarding the wiring for each thin-film transistor and photodiode in this case, appropriate configuration is sufficient. For example, it is preferable to configure multiple gate wirings and multiple data wirings orthogonally, and to arrange and connect each thin-film transistor and photodiode corresponding to their intersection points, thereby driving each thin-film transistor (active matrix driving).

[0034] Furthermore, in the organic semiconductor device 100 of the first embodiment, the thin-film transistor and the photodiode are disposed in a position that overlaps when viewed from above, but they can also be disposed in a position that does not overlap when viewed from above. However, considering the area efficiency when multiple photodiodes are disposed, the former configuration (the configuration in which the thin-film transistor and the photodiode overlap when viewed from above) is more preferred. The same applies to the embodiments described below.

[0035] Furthermore, in the organic semiconductor device 100 of the first embodiment, a bottom-gate type thin-film transistor is exemplified, but a top-gate type thin-film transistor may also be used. In this case, it is appropriate to configure it such that wiring is led out from the source / drain electrodes and that the wiring is in contact with the conductive member 33. The same applies to the embodiments described below.

[0036] According to the first embodiment described above, by configuring a first substrate on which a thin-film transistor is disposed and a second substrate on which a photodiode is disposed to face each other at a fixed interval, and sealing the space 20 containing the thin-film transistor and the photodiode with a sealing member 3, an organic semiconductor device capable of suppressing deterioration caused by the intrusion of external moisture or the like can be obtained. Furthermore, by configuring the space 20 containing the thin-film transistor and the photodiode with a sealing member 3, compared to a structure where a passivation film is formed on the laminate of the thin-film transistor and the photodiode, the thin-film transistor and the photodiode can be formed on the first and second substrates under their respective optimal conditions, thus providing an organic semiconductor device with high electrical and optical characteristics. Moreover, by configuring the space 20 containing the thin-film transistor and the photodiode with a sealing member 3, compared to a structure where a passivation film is formed on the laminate of the thin-film transistor and the photodiode, it is not subject to damage during passivation film formation (damage caused by solvents, damage caused by high temperatures), thus providing an organic semiconductor device with high reliability. The organic semiconductor device 100 of the first embodiment can be used, for example, for observing blood flow in the human body.

[0037] (Second Implementation)

[0038] Figure 2 This is a schematic cross-sectional view showing the structure of the organic semiconductor device according to the second embodiment. The organic semiconductor device 100a of the second embodiment includes a photodiode and a thin-film transistor with the same structure as the organic semiconductor device 100 of the first embodiment described above, and also includes a pressure sensor (third element). The photodiode and the thin-film transistor are made of organic materials. Furthermore, the same reference numerals are used for components common to the organic semiconductor device 100 of the first embodiment, and detailed descriptions of them are omitted.

[0039] Figure 2The illustrated organic semiconductor device 100a includes a plurality of thin-film transistors and a plurality of photodiodes between a first substrate 1 and a second substrate 2. In the illustrated example, the organic semiconductor device 100a includes two thin-film transistors and two photodiodes. The thin-film transistors and photodiodes, one opposite each other, are paired and are electrically and physically connected via conductive members 18. Furthermore, in the illustrated example, a protective film 19 is provided covering the organic semiconductor film 14 of each thin-film transistor; however, this protective film 19 may be omitted.

[0040] Furthermore, a pressure sensor is disposed between the first substrate 1 and the second substrate 2, between one pair of thin-film transistors and photodiodes and another pair of thin-film transistors and photodiodes. The pressure sensor is configured to include electrodes 31 and 32 and a pressure-sensitive member 33 disposed between these electrodes 31 and 32. The space 20 containing these thin-film transistors and photodiodes and the pressure sensor is sealed to the outside by a sealing member 3 disposed on one side of each of the first substrate 1 and the second substrate 2.

[0041] Electrode 31 is disposed on one side of insulating film 11 on one side of first substrate 1. Electrode 31 can be formed, for example, by the same process as that used to form source / drain electrodes 12 and 13. Electrode 31 can be obtained, for example, by patterning a transparent conductive film such as ITO (indium tin oxide) or a metal film such as gold into a predetermined shape. Furthermore, although not shown in the figure, wiring is appropriately connected to electrode 31.

[0042] Electrode 32 is disposed on one side of the second substrate 2. This electrode 32 can be formed, for example, by the same process as that used to form the transparent electrode 15. Electrode 32 can be obtained, for example, by patterning a transparent conductive film such as an ITO (indium tin oxide) film into a predetermined shape. Furthermore, although not shown in the figure, wiring is appropriately connected to electrode 32.

[0043] The pressure-sensitive member 33 is disposed between one side of the first substrate 1 and the second substrate 2, respectively, and is electrically and physically connected to the electrodes 31 and 32. As the pressure-sensitive member 33, any member whose physical value changes when the distance between the first substrate 1 and the second substrate 2 changes due to external pressure is acceptable; a member that displays a change in resistance is preferred. Specifically, for example, a pressure-sensitive conductive elastomer or polyvinylidene fluoride with a piezoelectric effect can be used as the pressure-sensitive member 33. A pressure-sensitive conductive elastomer refers to an elastomer formed in which conductive particles (e.g., carbon) are uniformly dispersed in insulating silicone rubber.

[0044] Furthermore, while the illustrated example shows a single pressure sensor, multiple pressure sensors can also be used. In this case, the pressure sensors can be configured in a matrix, similar to photodiodes, and thin-film transistors can be connected to each pressure sensor for operation via an active matrix drive. Alternatively, multiple pressure sensors can be interconnected for passive drive without using switching elements such as thin-film transistors. In this case, the wiring connected to the electrodes 31 of each pressure sensor can, for example, be formed on the lower side of the insulating film 11 (between the insulating film 11 and the first substrate 1), and the electrodes 31 and wiring can be electrically and physically connected via contact holes provided in the insulating film 11.

[0045] According to the second embodiment described above, a structure is formed in which a first substrate equipped with a thin-film transistor and a second substrate equipped with a photodiode are arranged opposite each other at a fixed interval, and the space 20 containing the thin-film transistor, the photodiode, and the pressure sensor is sealed with a sealing member 3. This allows for the acquisition of an organic semiconductor device capable of suppressing deterioration caused by the intrusion of external moisture or the like. The organic semiconductor device 100a of the second embodiment can be used, for example, for observing a human pulse, detecting the movement of a respirator, and measuring blood pressure.

[0046] (Third implementation method)

[0047] Figure 3 This is a schematic cross-sectional view showing the structure of the organic semiconductor device according to the third embodiment. The organic semiconductor device 100b of the third embodiment includes a photodiode and a thin-film transistor with the same structure as the organic semiconductor device 100 of the first embodiment, and also includes a light-emitting element (third element). The active layer of the photodiode and the active layer of the thin-film transistor are each made of organic materials. Furthermore, the same reference numerals are used for components common to the organic semiconductor device 100 of the first embodiment, and detailed descriptions of them are omitted.

[0048] Figure 3 The illustrated organic semiconductor device 100b comprises a plurality of thin-film transistors and a plurality of photodiodes between a first substrate 1 and a second substrate 2. In the illustrated example, the organic semiconductor device 100a comprises two thin-film transistors and two photodiodes. Each thin-film transistor and photodiode is paired and electrically and physically connected via a conductive member 18. Furthermore, the protective film 19 covering the organic semiconductor film 14 of each thin-film transistor may be omitted.

[0049] Furthermore, a light source is disposed between the first substrate 1 and the second substrate 2, between one pair of thin-film transistors and photodiodes and another pair of thin-film transistors and photodiodes. The light source is configured to include an LED chip (light-emitting element) 40, a light spacer 41, and an electrode 42. The space 20 containing these thin-film transistors and photodiodes and the light source is sealed to the outside by a sealing member 3 disposed on one side of each of the first substrate 1 and the second substrate 2. Although only one light source (light-emitting element) is shown in the illustrated example, multiple light sources (light-emitting elements) may also be provided.

[0050] LED chip 40 is a semiconductor light-emitting element that emits light of a specified wavelength. The light emitted from LED chip 40 is emitted to the outside via second substrate 2. As an example of its use, the light emitted from LED chip 40 is reflected by an object (e.g., the skin of a person being examined), and the reflected light is detected by a photodiode.

[0051] The light spacer 41 is disposed between one side of the first substrate 1 and the second substrate 2, surrounding the LED chip 40. In the illustrated example, the light spacer 41 is formed with a trapezoidal cross-section. The light spacer 41 can be formed, for example, by patterning a polyimide film. This light spacer 41 is used to prevent light emitted from the LED chip 40 from directly incident on the photodiode.

[0052] Preferably, a metal reflective film made of silver or aluminum is provided on the inner surface of the optical spacer 41, that is, on the surface that defines the space where the LED chip 40 exists. Alternatively, a light-shielding layer such as a black filter layer can be formed instead of the optical spacer 41. From the viewpoint of efficient utilization of the light emitted by the LED chip 40, it is preferable to use an optical spacer 41 with a metal reflective film on its inner surface.

[0053] Electrode 42 is disposed on one side of insulating film 11 on one side of first substrate 1. Electrode 42 is used to supply driving power to LED chip 40 and is electrically and physically connected to LED chip 40. Electrode 42 can be formed, for example, by the same process as that used for manufacturing source / drain electrodes 12 and 13. Electrode 42 can be obtained, for example, by patterning a transparent conductive film such as ITO (indium tin oxide) film or a metal film such as gold into a predetermined shape. Furthermore, although not shown in the figure, wiring is appropriately connected to electrode 42.

[0054] According to the third embodiment described above, a structure is formed in which a first substrate provided with a thin-film transistor and a second substrate provided with a photodiode are arranged opposite each other at a fixed interval, and the space 20 containing the thin-film transistor, the photodiode, and the light source (light-emitting element) is sealed by a sealing member 3. This allows for the acquisition of an organic semiconductor device capable of suppressing deterioration caused by the intrusion of external moisture or the like. The organic semiconductor device 100b of the third embodiment can be used, for example, for observing blood flow in the human body, as a pulse sensor, and for pulse oximeters (observing blood oxygen concentration). Since light for observation can be emitted from the light source and its reflected light can be detected by the photodiode, high functionality can be achieved.

[0055] (Fourth Implementation)

[0056] As a fourth embodiment, an example of a method for manufacturing the organic semiconductor device 100a of the second embodiment will be described. Furthermore, the organic semiconductor device 100 of the first embodiment has the same structure as the organic semiconductor device 100a of the second embodiment, except that it lacks a pressure sensor; therefore, the organic semiconductor device 100 of the first embodiment can be manufactured in the same manner as the manufacturing method described below. Additionally, the organic semiconductor device 100b of the third embodiment has the same structure as the organic semiconductor device 100a of the second embodiment, except that it has a light source instead of a pressure sensor; therefore, the organic semiconductor device 100b of the third embodiment can be manufactured in the same manner as the manufacturing method described below.

[0057] Figure 4 (A) ~ Figure 4 (D) is a schematic cross-sectional view illustrating the manufacturing method of the organic semiconductor device 100a. Additionally, Figure 5 (A) Figure 5 (B) and Figure 6 (A) Figure 6 (B) is a schematic top view illustrating the manufacturing method of the organic semiconductor device 100a. Additionally, Figure 4 (A) and Figure 5 (A) Figure 4 (B) and Figure 5 (B) Figure 4 (C) and Figure 6 (A) Figure 4 (D) and Figure 6 (B) shows the sectional view and top view of the same process, respectively. Additionally, Figure 4 (A) ~ Figure 4 (D) shows the cross section. Figure 5 (A) Figure 5 (B) and Figure 6 (A) Figure 6 (B) shows the cross section along line aa.

[0058] Reference Figure 4 (A) and Figure 5 (A) describes the process of forming a thin-film transistor on the first substrate 1. First, a gate electrode 10 is formed on one side of the first substrate 1. For example, a transparent conductive film or metal film as described above is formed on one side of the first substrate 1, and patterned by photolithography to obtain the gate electrode 10. The thickness of the gate electrode 10 can be set to approximately 40 nm, for example.

[0059] Next, an insulating film 11 is formed on one side of the first substrate 1 in a manner that covers the gate electrode 10. For example, the insulating film 11 can be formed by coating one side of the first substrate 1 with an organic material that will become the insulating film. As described above, an inorganic material can also be used to form the insulating film 11.

[0060] Next, source / drain electrodes 12 and 13 are formed on one side of the insulating film 11, and electrode 31 is also formed. At this time, wiring connecting to each source / drain electrode 12 and 13, and wiring connecting to electrode 31, are also formed as needed. For example, the source / drain electrodes 12 and 13 and electrode 31 can be formed by forming a transparent conductive film or a metal film on one side of the insulating film 11 and patterning the transparent conductive film using photolithography. The film thickness of the source / drain electrodes 12 and 13 and electrode 31 can be set to approximately 40 nm, for example.

[0061] In addition, when forming the organic semiconductor device 100b of the third embodiment, an electrode 42 is formed instead of an electrode 31 in this process, an LED chip 40 is disposed on the electrode 42, and a light spacer 41 is formed.

[0062] Next, an organic semiconductor film 14 is formed at a position that contacts the source / drain electrodes 12 and 13 respectively and overlaps with the gate electrode 10 when viewed from above. For example, the organic semiconductor film 14 can be obtained by dropping organic semiconductor material onto a predetermined position that overlaps with the gate electrode 10 when viewed from above using a method such as inkjet printing and then drying it. The channel length and channel width of the organic semiconductor film 14 can be set, for example, to 10 μm and 500 μm, respectively. In addition, a protective film 19 is formed covering the organic semiconductor film 14 as needed. This protective film 19 can be formed, for example, by overlapping an organic material that will serve as an insulating film onto the organic semiconductor film 14 and then drying it.

[0063] Reference Figure 4 (B) and Figure 5(B) The process of forming a photodiode on the second substrate 2 is described. Here, it is envisioned that a film substrate is used as the second substrate 2. First, the second substrate 2 is disposed on one side of the support substrate 100. The support substrate 100 is used to support the second substrate 2 when the photodiode is manufactured on the second substrate 2, and is configured to be peelable from the second substrate 2 afterwards. As the support substrate 100, a glass substrate can be used, for example.

[0064] A transparent electrode 15 and an electrode 32 are formed on one side of a second substrate 2 supported by a support substrate 100. At this time, wiring connected to the transparent electrode 15 and wiring connected to the electrode 32 are also formed as needed. For example, a transparent conductive film as described above is formed on one side of the second substrate 2 and patterned using photolithography to obtain the transparent electrode 15 and the electrode 32. The thickness of the transparent electrode 15 and the electrode 32 can be set to approximately 40 nm, for example.

[0065] Next, an active layer 16 is formed on one side of the transparent electrode 15. For example, an organic semiconductor material can be dropped onto a predetermined position that overlaps with the transparent electrode 15 when viewed from above using a method such as inkjet printing and then dried to obtain the active layer 16. The film thickness of the active layer 16 can be set to, for example, tens of nm. Alternatively, functional layers such as a carrier injection layer, a carrier blocking layer, or a transport layer can be formed between the active layer 16 and the transparent electrode 15, and between the active layer 16 and the electrode 17, respectively.

[0066] Next, an electrode 17 is formed at a position opposite the transparent electrode 15, separated by the active layer 16. For example, the electrode 17 can be obtained by patterning a metal film such as an aluminum film. As an example, the electrode 17 is preferably formed by mask evaporation. At this time, wiring connected to the electrode 17 is also formed as needed.

[0067] Reference Figure 4 (C) and Figure 6 (A) The process of forming the conductive member 18 and the pressure-sensitive member 33 at predetermined locations on the first substrate 1, and the process of forming the sealing member 3, will be described. First, the conductive member 18 is formed at a predetermined location in contact with the source / drain electrode 13. For example, the conductive member 18 can be formed by applying silver paste in a dotted pattern using a dispenser. Next, the pressure-sensitive member 33 is formed at a predetermined location in contact with the electrode 31. For example, the pressure-sensitive member 33 can be formed by applying pressure-sensitive material in a dotted pattern using a dispenser. A sealing member with added Au spheres (particles coated with Au) can also be used for the conductive member. Additionally, a gap control member can be added to the conductive member. The conductive member expands in the planar direction during the process of pressing the substrates together, which will be described later; therefore, the amount of expansion is taken into account when forming the conductive member.

[0068] Next, the sealing member 3 is coated around the area where each thin-film transistor is formed. When a gap control member is added to the sealing member 3, it is preferable that the diameter of the gap control member is smaller than the diameter of the conductive particles added to the conductive member 33.

[0069] Furthermore, the conductive member 18, the pressure-sensitive member 33, and the sealing member 3 may be formed on the second substrate 2 instead of the first substrate 1.

[0070] Reference Figure 4 (D) and Figure 6 (B) The process of bonding the first substrate 1 and the second substrate 2 is described. The first substrate 1 and the second substrate 2 are aligned and overlapped such that the conductive member 18 and the pressure-sensitive member 33 on the first substrate 1 side are respectively connected to the electrodes 17 and 32 on the second substrate 2 side. This overlap is preferably performed in an atmosphere of inactive gas such as nitrogen or in a vacuum.

[0071] The first substrate 1 and the second substrate 2 are overlapped to press the substrates together, and the sealing member 3 is then cured. Regarding the curing method, depending on the resin used as the material for the sealing member 3, heat treatment, light irradiation treatment, or a combination of both may be performed. Furthermore, it is preferable to distribute gap control members on one side of either the first substrate 1 or the second substrate 2 before overlapping the first substrate 1 and the second substrate 2. Then, the support substrate 100 is peeled off from the second substrate 2.

[0072] The organic semiconductor device 100a of the second embodiment can be manufactured using the method described above. According to the manufacturing method of the fourth embodiment, after forming a thin-film transistor and a photodiode on different substrates, the two substrates are bonded together, thus enabling the thin-film transistor and photodiode to be formed separately under optimized conditions. For example, limitations such as temperature conditions can be reduced.

[0073] (Example)

[0074] Figure 7 (A) and Figure 7 (B) are diagrams illustrating the structure and circuit structure examples of the organic semiconductor devices of the embodiments. These are all embodiments relating to the thin-film transistors and photodiodes in the organic semiconductor devices of the above-described embodiments. Figure 7 (A) Figure 7 (B) The organic semiconductor devices of the respective embodiments are configured to include a thin-film transistor 110 and a photodiode 120. The difference between the embodiments lies in the circuit structure, which will be explained below.

[0075] In each embodiment, a glass substrate is used as the first substrate 1 to form the thin-film transistor 110. The gate electrode 10 is an aluminum electrode with a thickness of 50 nm, formed by vacuum evaporation. The insulating film 11 is an insulating film formed by stacking an alumina film (Al2O3 film) with a thickness of 20 nm, formed by sputtering, and a PVCi film with a thickness of 60 nm. The source / drain electrodes 12 and 13 are gold electrodes with a thickness of 30 nm, formed by vacuum evaporation. The organic semiconductor material constituting the organic semiconductor film 14 can be a low-molecular-weight organic semiconductor material, preferably a liquid crystal low-molecular-weight organic semiconductor material, and particularly preferably a liquid crystal low-molecular-weight organic semiconductor material having BTBT (dialkyl-benzothiophene) or anthracene as aromatic π-electron conjugation sites. As the organic semiconductor film 14 in each embodiment, Ph-BTBT-10 (2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene), a liquid crystal-like low-molecular-weight organic semiconductor material, was used. A liquid crystal-like organic semiconductor is an organic semiconductor that exhibits a liquid crystal phase. Organic semiconductors possess aromatic π-electron conjugated sites that serve as charge transport sites.

[0076] Furthermore, in each embodiment, a glass substrate is used as the second substrate 2 to form the photodiode 120. An ITO electrode with a film thickness of 40 nm, formed by sputtering, is used as the transparent electrode 15. Additionally, in each embodiment, a PEIE (ethoxylated polyethyleneimine) interlayer is provided between the ITO electrode and the active layer. The active layer 16 is a layer with a microlayer separation structure (bulk heterostructure) based on a mixture of donor and acceptor materials. As the donor material, conjugated polymeric or low-molecular-weight organic semiconductor materials can be used. As the acceptor material, low-molecular-weight semiconductor materials can be used. Specifically, 8H₂Pc, a crystalline phthalocyanine derivative, is used as the donor material. For example, non-crystalline phthalocyanine derivatives such as 8OH₂Pc (1, 4, 8, 11, 15, 18, 22, 25-octaalkoxy-phthalocyanine) can also be used as the donor material. As the acceptor material, the fullerene derivative PC61BM (Phenyl-C61-butyric acid methylester) was used. As the electrode 17, an electrode was used which was formed by stacking a 5 nm thick MoO3 film and a 50 nm thick gold film, which were respectively deposited by vacuum evaporation.

[0077] exist Figure 7In embodiment (A), the source / drain electrodes 12 and 13 of the thin-film transistor, which function as the source, are connected to the electrode 17 of the photodiode via a conductive component (conductive resin material) such as silver paste. On the other hand, in... Figure 7 In embodiment (B), the electrodes of the source / drain electrodes 12 and 13 of the thin-film transistor, which function as drain electrodes, are connected to the electrodes 17 of the photodiode via conductive components (conductive resin materials) such as silver paste.

[0078] The mobility of the thin-film transistors in each embodiment is 2.0 × 10⁻⁶. -2 cm 2 With a threshold voltage of 1.7V and a voltage of / Vs, the transistor exhibits excellent characteristics. Furthermore, all components of the thin-film transistor and photodiode suppressed degradation caused by external moisture and other factors, demonstrating good operation even after prolonged exposure. Moreover, no performance degradation was observed in any component after 500 hours of high-temperature and high-humidity testing at 60°C and 90%RH.

[0079] Furthermore, this disclosure is not limited to the embodiments described above, and various modifications can be made within the scope of this disclosure. For example, in the various embodiments and examples described above, as an example of an organic semiconductor device, a structure having a thin-film transistor and a photodiode made of organic materials is shown, but the organic semiconductor devices to which this disclosure can be applied are not limited to this. This disclosure can be applied to the following semiconductor devices, which are organic semiconductor devices having various elements made of organic semiconductors, for example, liquid crystal elements or organic EL elements having thin-film transistors (using organic materials), various sensors such as photodiodes, pigment-sensitized or perovskite solar cells, etc.

[0080] This disclosure has the following features.

[0081] (Note 1)

[0082] An organic semiconductor device comprising: The first substrate and the second substrate, each with one side facing each other, are configured to be spaced apart from each other; and A sealing member is disposed between the first substrate and the second substrate, and is configured to surround the space defined between the first substrate and the second substrate. Within the space and on one side of the first substrate, at least one first element comprising an organic semiconductor film is disposed. At least one second element is provided within the space and on one side of the second substrate.

[0083] (Note 2)

[0084] According to the organic semiconductor device described in Appendix 1, wherein... The organic semiconductor device further includes a conductive component disposed within the space between the first substrate and the second substrate. The first element and the second element are electrically connected to each other via the conductive member.

[0085] (Note 3)

[0086] According to the organic semiconductor device described in Appendix 1 or 2, wherein, The first element is a thin-film transistor.

[0087] (Note 4)

[0088] The organic semiconductor device according to any one of Appendices 1 to 3, wherein... The organic semiconductor film is constructed using an organic semiconductor with liquid crystal properties.

[0089] (Note 5)

[0090] The organic semiconductor device according to any one of Appendices 1 to 4, wherein... The second component is a photodiode.

[0091] (Note 6)

[0092] According to the organic semiconductor device described in Appendix 5, wherein... The photodiode has an active layer using an organic semiconductor.

[0093] (Note 7)

[0094] The organic semiconductor device according to any one of Appendices 1 to 6, wherein... The first element and the second element are configured to at least partially overlap when viewed from above.

[0095] (Postscript 8)

[0096] The organic semiconductor device according to any one of Appendices 1 to 7, wherein... The organic semiconductor device further includes at least one third element disposed within the space and positioned so as not to overlap with the first and second elements when viewed from above.

[0097] (Note 9)

[0098] According to the organic semiconductor device described in Appendix 8, wherein... The third component is a pressure sensor.

[0099] (Postscript 10)

[0100] According to the organic semiconductor device described in Appendix 8, wherein... The third element is a light-emitting element.

[0101] Label Explanation

[0102] 1: First substrate, 2: Second substrate, 3: Sealing member, 10: Gate electrode, 11: Insulating film, 12, 13: Source / drain electrodes, 14: Organic semiconductor film, 15: Transparent electrode, 16: Active layer, 17: Electrode, 18: Conductive member.

Claims

1. An organic semiconductor device comprising: The first substrate and the second substrate each have one side facing each other and are configured to be spaced apart from each other; as well as A sealing member is disposed between the first substrate and the second substrate, and is configured to surround the space defined between the first substrate and the second substrate. Within the space and on one side of the first substrate, at least one first element comprising an organic semiconductor film is disposed. At least one second element is provided within the space and on one side of the second substrate.

2. The organic semiconductor device according to claim 1, wherein, The organic semiconductor device further includes a conductive component disposed within the space between the first substrate and the second substrate. The first element and the second element are electrically connected to each other via the conductive member.

3. The organic semiconductor device according to claim 1, wherein, The first element is a thin-film transistor.

4. The organic semiconductor device according to claim 1, wherein, The organic semiconductor film is constructed using an organic semiconductor with liquid crystal properties.

5. The organic semiconductor device according to claim 1, wherein, The second component is a photodiode.

6. The organic semiconductor device according to claim 5, wherein, The photodiode has an active layer using an organic semiconductor.

7. The organic semiconductor device according to claim 1, wherein, The first element and the second element are configured to at least partially overlap when viewed from above.

8. The organic semiconductor device according to claim 1, wherein, The organic semiconductor device further includes at least one third element disposed within the space and positioned so as not to overlap with the first and second elements when viewed from above.

9. The organic semiconductor device according to claim 8, wherein, The third component is a pressure sensor.

10. The organic semiconductor device according to claim 8, wherein, The third element is a light-emitting element.

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