A sputtering target source and method for actively and precisely controlling particle energy

Abstract

This invention discloses a sputtering target source and method for actively and precisely controlling particle energy. The energy of the sputtered particles can be actively controlled by a particle energy precision control power supply. The method includes: 1. a magnet and a yoke capable of forming an arched magnetic field region on the target surface; 2. a target material whose sputtered area is only exposed behind the arched magnetic field region; 3. a baffle or yoke located insulated from the target material at the non-arched magnetic field region or the end of the arched region. This sputtering target source enables control of the sputtered particle energy, which can be used to control the structure and properties of thin films. This invention has applications in the field of materials surface engineering.

Description

Technical Field

[0001] This invention relates to the field of materials surface engineering. Background Technology

[0002] Magnetron sputtering technology, with its numerous advantages such as low-temperature deposition, smooth surface, and absence of particle defects, is widely used in thin film fabrication fields, including: microelectronics for fabricating metal wires, metal heat sinks, and photolithography masks; optics for fabricating optical components such as lenses, filters, and mirrors; solar cells for improving photoelectric conversion efficiency; the machinery industry for coatings to improve surface hardness, wear resistance, and corrosion resistance; and functional thin films, such as low-temperature deposited silicon nitride antireflective films and ferroelectric thin films.

[0003] However, current magnetron sputtering technology requires heating the workpiece or applying a negative voltage to control the energy of the magnetron-deposited particles. It is not yet possible to actively control the energy of the deposited particles to influence the formation of the coating's atomic topology. The final structure formed during coating deposition primarily depends on the nucleation thermodynamics and kinetics of the coating's spontaneous growth. Summary of the Invention

[0004] In existing coating processes, energy control of magnetron-deposited particles can only be achieved by applying a negative voltage to the workpiece, which is greatly affected by plasma parameters such as ionization rate. Furthermore, it is not yet possible to actively intervene and control the atomic topology building process of the coating by controlling the energy of the deposited particles. The final structure formed during coating deposition still mainly depends on the nucleation thermodynamics of spontaneous growth in the coating, resulting in insufficient and inflexible methods for controlling growth kinetics. The purpose of this invention is to develop a method and apparatus for actively controlling the energy of deposited particles, laying the foundation for large-scale, atomically controllable preparation in coating processes that intervene in or influence the coating structure.

[0005] To achieve the above objectives, this invention proposes a sputtering target source for actively and precisely controlling particle energy, characterized in that the particle energy sputtered from the target source can be actively controlled by a particle energy precision control power supply.

[0006] As a preferred embodiment, the sputtered area of ​​the target is located only behind the arched region of an arched magnetic field formed by a magnet and a magnetic yoke in front of the target, and an insulating baffle or magnetic yoke is provided at the end of the arched region or at a non-arched magnetic field region.

[0007] As a preferred embodiment, the target material can be a planar target, a planar ring target, a circular target, a ring target, a cylindrical target, or other targets of special shapes, characterized in that an arched magnetic field can be formed on its surface using a magnet and a magnetic yoke.

[0008] As a preferred embodiment, the baffle can be separated from the target material to achieve insulation from the target material, or it can be electrically insulated from the target material through an insulating material, characterized in that it does not directly conduct electricity with the target material.

[0009] As a preferred method, the particle energy precision control power supply includes at least two output electrodes, namely a first output electrode and a second output electrode. The power supply is a bipolar pulse power supply, characterized in that, for the first output electrode and the second output electrode, the order of the bipolar pulses is that the first output electrode is negative first and then positive relative to the second output electrode. The negative pulse sputters particles of ions, atoms, molecules or atomic groups from the target material, and the positive pulse enables the particles to gain energy.

[0010] As a preferred method, the first output electrode of the particle energy active precision control power supply is connected to the target material, and the dead time between two pulses is no more than 50 microseconds.

[0011] On the other hand, the present invention also proposes a method for actively and precisely controlling particle energy, characterized in that the energy of particles sputtered from the target source can be controlled by a particle energy precision control power supply, including: Step 1: completing the vacuum evacuation of the vacuum chamber and setting the power supply parameters of the particle energy precision control source; Step 2: introducing working gas into the vacuum chamber and achieving precise control of particle energy by adjusting the power supply parameters of the particle energy precision control source; Step 3: the particles with precisely controlled energy are deposited on the workpiece to perform thin film deposition and complete the thin film preparation.

[0012] As a preferred embodiment, the sputtered area of ​​the target is located only behind the arched region of an arched magnetic field formed by a magnet and a magnetic yoke in front of the target, and an insulating baffle or magnetic yoke is provided at the end of the arched region or at a non-arched magnetic field region.

[0013] As a preferred embodiment, the target material can be a planar target, a planar ring target, a circular target, a ring target, a cylindrical target, or other targets of special shapes, characterized in that an arched magnetic field can be formed on its surface using a magnet and a magnetic yoke.

[0014] As a preferred embodiment, the baffle can be separated from the target material to achieve insulation from the target material, or it can be electrically insulated from the target material through an insulating material, characterized in that it does not directly conduct electricity with the target material.

[0015] Basic principle of the invention: A sputtering target source and method that can actively control particle energy mainly consists of a baffle, insulating material, target material, magnet, magnetic yoke, etc., and achieves precise control of particle energy through a precise particle energy control power supply.

[0016] The sputtered area of ​​the target material is only located behind the arched area of ​​an arched magnetic field formed by a magnet and a magnetic yoke in front of the target material. At the end of the arched area or at the non-arched magnetic field area, a baffle or magnetic yoke that is insulated from the target material is set.

[0017] The baffle can be separated from the target material to achieve insulation from the target material, or it can be electrically insulated from the target material through insulating material, so as not to conduct electricity directly with the target material.

[0018] A bipolar pulsed power supply is used as the power source for sputtering and precise particle energy control. This precise particle energy control power supply is a bipolar pulsed power supply, comprising at least two output electrodes ① and ②. For electrodes ① and ②, the bipolar pulse sequence is negative first, then positive, relative to electrode ②. The negative pulse sputters the target particles (ions, atoms, molecules, atomic groups), while the positive pulse energizes the particles.

[0019] The particle energy precise control power supply electrode ① is connected to the target material. When the electrode connected to the target material is in the form of a negative pulse, it is used for sputtering to obtain particles for deposition; when the electrode connected to the target material is subsequently switched to a positive pulse, the particles for deposition obtain controllable energy through the positive pulse, and the dead time between the two pulses is no more than 50 microseconds.

[0020] As a preferred method, a negative pulse is first applied to the target material to sputter particles (ions, atoms, molecules, atomic groups) from the target material. Then, a positive pulse is applied to the target material to give the particles a certain energy. The negative pulse voltage is -100V to -2000V, and the positive pulse voltage can be 1V to 100KV.

[0021] The aforementioned particle energy precisely controls the sputtering target source. A magnetic field with arched magnetic field lines covers the area in front of the sputtered target. In the non-arched magnetic field area, a baffle that is insulated from the target is set. The magnetic field strength in the arched magnetic field area is not less than 10 Gs.

[0022] As an alternative, the target material is connected to the output electrode ① of the power supply that first outputs a negative pulse, and the other output electrode ② of the power supply is connected to the vacuum chamber and then grounded.

[0023] As an optional method two, the output electrode ① of the power supply that precisely controls particle energy is connected to the target material and outputs a negative pulse, and the output electrode ② of the power supply is connected to a baffle that is insulated from the target material.

[0024] As an optional method three, the target material is connected to the electrode of the power supply that first outputs a negative pulse, and the other electrode of the power supply is connected to the magnetic yoke.

[0025] The active and precise control of particle energy sputtering target source and method of the present invention includes: 1. a magnet and a magnetic yoke capable of forming an arched magnetic field region on the target surface; 2. a target material whose sputtered area is only exposed behind the arched magnetic field region; 3. a baffle or magnetic yoke located insulated from the target material in the non-arched magnetic field region or at the end of the arched region.

[0026] The sputtering target source and method proposed in this invention for actively and precisely controlling particle energy can be used to actively control the energy of sputtered particles, intervene in or influence the coating formation process. In addition to its potential applications in the aforementioned traditional fields, it can also be used in the preparation of novel structural coatings, plasma propulsion and other fields.

[0027] The sputtering target source of the present invention can realize the control of the energy of sputtered particles, which can be used to control the structure and properties of thin films.

[0028] Advantages of this invention: Sputtering targets with precise particle energy control can produce particles for coating deposition with controllable energy, allowing people to intervene in or influence the coating structure and achieve controllable coating preparation. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are only used to explain the concept of the present invention.

[0030] Figure 1 A schematic diagram of a sputtering target source and electrical connection method for precise particle energy control as an optional approach.

[0031] Figure 2 A schematic diagram of the electrical connection between the first output electrode ① of the sputtering target source and the power supply for precise particle energy control, which is connected to the target material, and the second output electrode ② of the power supply, which is connected to the baffle.

[0032] Figure 3 This diagram illustrates a sputtering target source for precise particle energy control and a second output electrode ② of the power supply for precise particle energy control connected by a magnetic yoke. In this structure, no baffle is required.

[0033] Figure 4 A schematic diagram of the sputtering target source and electrical connection for precise control of particle energy in cylindrical target materials.

[0034] Figure 5 A schematic diagram of control pulses for precisely controlling particle energy output, showing positive pulses of 50V and negative pulses with intervals of 0 microseconds and 20 microseconds respectively.

[0035] Figure 6 This is a graph showing the relative number of particles at different N-particle energies.

[0036] Figure 7 This is a graph showing the relative number of particles at different Ti particle energies.

[0037] Figure label: 1. Arched region of magnetic field; 2. Non-arched magnetic field region; 3. Baffle; 4. Insulating material; 5. Target material, which is a cross-section of a circular or planar target; 6. Magnet; 7. Magnetic yoke; 8. Particle energy precision control power supply; 1. First output electrode ① and 2. Second output electrode ②. Detailed Implementation

[0038] In the following description, an embodiment of the sputtering target and method for actively and precisely controlling particle energy according to the present invention will be described with reference to the accompanying drawings.

[0039] The embodiments described herein are specific implementations of the present invention, used to illustrate the concept of the invention, and are illustrative and exemplary, and should not be construed as limiting the implementation or scope of the invention. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein.

[0040] The accompanying drawings in this specification are schematic diagrams used to illustrate the concept of the invention and to schematically show the shapes of the various parts and their interrelationships. Please note that, in order to clearly demonstrate the structure of the various parts of the embodiments of the invention, the drawings are not necessarily drawn to the same scale. Identical or similar reference numerals are used to indicate identical or similar parts.

[0041] Figure 1 This diagram illustrates a particle energy precision control sputtering target source and its electrical connection method as an optional approach. The diagram schematically shows: an arched magnetic field region 1; a non-arched magnetic field region 2; a baffle 3; an insulating material 4; a target 5, a schematic cross-section of a circular or planar target; a magnet 6; a magnetic yoke 7; a particle energy precision control power supply 8 and its first output electrode ① and second output electrode ②. The target is connected to the first output electrode ① of the particle energy precision control power supply, and the second output electrode ② is connected to the vacuum chamber (not shown in the diagram) and grounded.

[0042] The implementation involves connecting the target material to the first output electrode ① of a power supply with precise particle energy control, and the second output electrode ② to a vacuum chamber (not shown in the diagram) and grounding it. When the first output electrode ① connected to the target material is in a negative pulse state, magnetron sputtering begins, obtaining particles for deposition. Subsequently, when this electrode connected to the target material switches to a positive pulse state, the second output electrode ② is grounded, and the particles for deposition obtain controllable energy through this positive pulse. The energy of the particles sputtered from the target source can be controlled by the particle energy precision control power supply.

[0043] In a method for actively and precisely controlling particle energy according to an embodiment of the present invention, the particle energy sputtered from the target source can be controlled by a particle energy precision control power supply, including: Step 1: Complete the vacuuming of the vacuum chamber and set the power parameters of the particle energy precision control source; Step 2: Introduce working gas into the vacuum chamber and adjust the power parameters of the particle energy precision control source to achieve precise control of particle energy. Step 3: Particles with precisely controlled energy are deposited on the workpiece to perform thin film deposition, thus completing the thin film preparation.

[0044] The active and precise control of particle energy sputtering target source and method of the present invention has the following technical features: 1. A magnet and a magnetic yoke capable of forming an arched magnetic field region on the target surface; 2. A target material whose sputtered area is only exposed behind the arched magnetic field region; 3. A baffle or magnetic yoke located insulated from the target material in the non-arched magnetic field region or at the end of the arched region.

[0045] Figure 2 A schematic diagram of the electrical connection between the first output electrode ① of the sputtering target source and the power supply for precise particle energy control, which is connected to the target material, and the second output electrode ② of the power supply, which is connected to the baffle.

[0046] Figure 3 A schematic diagram showing the first output electrode ① of the particle energy precision control power supply connected to the target material, and the second output electrode ② connected to the particle energy precision control power supply using a magnetic yoke. This structure eliminates the need for baffles. Particle energy control for deposition is achieved under the combined action of electric and magnetic fields.

[0047] Figure 4 This diagram illustrates the sputtering target source and electrical connections for precise particle energy control of a cylindrical target. Its structure and principle are similar to... Figure 2 Similarly, the first output electrode ① of the power supply is connected to the target material, and the second output electrode ② of the particle energy precision control power supply is connected to the baffle.

[0048] Example: This implementation scheme uses a high-purity titanium target as the target material 5, and argon and nitrogen as the working gases, employing methods such as... Figure 5 The positive pulse of the particle energy precision control power supply shown is 50V, and the bipolar pulse and... Figure 1 The electrical connection method was described. A quadrupole mass spectrometer was used to measure the energy distribution of the particles. When the positive pulse was 50V, the energy of 60% of the titanium particles could be controlled at ~54eV, and the energy of 30% of the titanium particles at around 1.7eV. The energy of 80% of the nitrogen particles could be controlled at around ~54.4eV, and the energy of 10% of the nitrogen particles at around 2eV.

[0049] The above describes an embodiment of the sputtering target source and method for actively and precisely controlling particle energy according to the present invention.

[0050] It should be noted that the magnetic field structure in the schematic diagram of the sputtering target source given in this invention is a type II unbalanced magnetron sputtering magnetic field structure. This invention is also applicable to type I unbalanced magnetron sputtering magnetic field structures and balanced magnetron sputtering magnetic field structures.

[0051] The specific application of the sputtering target source and method for actively and precisely controlling particle energy according to the present invention can be carried out according to the foregoing disclosure, all of which are achievable by those skilled in the art. Moreover, the selection of target styles disclosed above is not limited to the disclosed styles, and those skilled in the art can also select various target styles according to the description of the present invention to achieve the purpose of the present invention.

Claims

1. A sputtering target source for actively and precisely controlling particle energy, characterized in that... The energy of the particles sputtered from the target source can be actively controlled by a particle energy precision control power supply.

2. The sputtering target source according to claim 1, characterized in that: The sputtered area of ​​the target is only behind the arched area of ​​an arched magnetic field formed by a magnet and a magnetic yoke in front of the target. At the end of the arched area or at the non-arched magnetic field area, a baffle or magnetic yoke that is insulated from the target is set.

3. The sputtering target source according to claim 2, wherein the target material can be a planar target, a planar ring target, a circular target, a ring target, or a cylindrical target and other targets of special shapes, characterized in that... It is possible to form an arched magnetic field on its surface using a magnet and a yoke.

4. The sputtering target source according to claim 2, wherein the baffle can be separated from the target material to achieve insulation from the target material, or it can be electrically insulated from the target material by means of an insulating material, characterized in that... It does not conduct electricity directly with the target material.

5. The sputtering target source according to claim 1, wherein the particle energy precision control power supply comprises at least two output electrodes, namely a first output electrode and a second output electrode, and the power supply is a bipolar pulse power supply, characterized in that... For the first and second output electrodes, the bipolar pulse sequence is that the first output electrode is negative first and then positive relative to the second output electrode. The negative pulse sputters particles of ions, atoms, molecules or atomic groups from the target material, while the positive pulse gives the particles energy.

6. In the sputtering target source according to claim 5, the first output electrode of the particle energy precision control power supply is connected to the target material, and the dead time between two pulses is not greater than 50 microseconds.

7. A method for actively and precisely controlling particle energy, characterized in that... The energy of the particles sputtered from this target source can be actively controlled by a particle energy precision control power supply, including: Step 1: Complete the vacuuming of the vacuum chamber and set the power parameters of the particle energy precision control source; Step 2: Introduce working gas into the vacuum chamber and adjust the power parameters of the particle energy precision control source to achieve precise control of particle energy. Step 3: Particles with precisely controlled energy are deposited on the workpiece to perform thin film deposition, thus completing the thin film preparation.

8. The method according to claim 7, characterized in that: The sputtered area of ​​the target is only behind the arched area of ​​an arched magnetic field formed by a magnet and a magnetic yoke in front of the target. At the end of the arched area or at the non-arched magnetic field area, a baffle or magnetic yoke that is insulated from the target is set.

9. The method according to claim 8, wherein the target material can be a planar target, a planar ring target, a circular target, a ring target, or a cylindrical target and other targets of special shapes, characterized in that... It is possible to form an arched magnetic field on its surface using a magnet and a yoke.

10. The method according to claim 8, wherein the baffle can be separated from the target material to achieve insulation from the target material, or it can be electrically insulated from the target material by means of an insulating material, characterized in that... It does not conduct electricity directly with the target material.

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