Gas supply device, gas supply system, and semiconductor manufacturing apparatus

Abstract

This invention provides a gas supply device, a gas supply system, and semiconductor manufacturing equipment capable of precise temperature and flow control. The gas supply device according to the invention includes: a housing; a base providing a plurality of tank mounting areas within the housing; a plurality of tanks disposed in the tank mounting areas; a gas supply line forming a supply path for precursor gas from the tanks to a process chamber; and a lifting unit for raising and lowering the tanks from the base.

Description

Technical Field

[0001] This invention relates to a gas supply device, a gas supply system, and a semiconductor manufacturing apparatus. Background Technology

[0002] Semiconductor (or display) manufacturing processes are processes used to manufacture semiconductor devices on a substrate (e.g., a wafer), including processes such as exposure, evaporation, etching, ion implantation, and cleaning. To perform these processes, semiconductor manufacturing equipment is installed in the cleanroom of a semiconductor manufacturing plant to perform the processing of the substrates fed into the equipment.

[0003] In semiconductor manufacturing equipment, various gases are supplied for process handling. In particular, precursor gases are supplied in processes such as ALD (atomic layer deposition) and ALE (atomic layer etching). With the miniaturization of processes, it is crucial to supply various precursor gases to the process chamber at precise temperatures and flow rates. However, in existing technologies, gas is supplied to the process chamber from external gas sources, which is difficult to achieve with accurate temperature and flow rates due to the construction of the supply pipes for each piece of equipment and system errors. Summary of the Invention

[0004] The present invention provides a gas supply device, a gas supply system, and a semiconductor manufacturing equipment capable of precise temperature and flow control.

[0005] The gas supply device according to the present invention includes: a housing; a base providing a plurality of tank mounting areas inside the housing; a plurality of tanks disposed in the tank mounting areas; a gas supply line forming a supply path for precursor gas from the tanks to a process chamber; and a lifting unit for lifting the tanks from the base.

[0006] The gas supply system according to the present invention includes: a gas supply device for storing and supplying precursor gas; and a valve box disposed between the gas supply device and the process chamber.

[0007] The semiconductor manufacturing apparatus according to the present invention includes: a process chamber for performing process processing on a substrate; and a gas supply system for supplying a precursor gas to the process chamber.

[0008] According to the present invention, by constructing a separate gas supply device, precise temperature and flow control can be achieved. Attached Figure Description

[0009] Figure 1 The structure of a semiconductor manufacturing apparatus according to the present invention is shown.

[0010] Figure 2 The appearance of the gas supply device is shown.

[0011] Figure 3 The gas supply device is shown.

[0012] Figure 4 The tank body, along with the heating and cooling jackets attached to it, are shown.

[0013] Figure 5 as well as Figure 6 The partitions between the tanks are shown.

[0014] Figure 7 The lifting unit is shown.

[0015] Figure 8 The valve box installed in the process chamber is shown.

[0016] Figure 9 The structure of the valve box is shown.

[0017] (Explanation of reference numerals in the attached diagram)

[0018] 1: Semiconductor manufacturing equipment

[0019] 20: Process cavity

[0020] 50: Gas supply system

[0021] 60: Gas supply device

[0022] 610: Casing

[0023] 620: Base

[0024] 630: Tank

[0025] 640: Gas supply line

[0026] 650: Lifting Unit

[0027] 70: Valve box

[0028] 710: Valve box housing

[0029] 720: Gas supply pipe and valve structure

[0030] 730: Temperature Regulator Detailed Implementation

[0031] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this invention pertains can readily implement it. The present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0032] To clearly illustrate the invention, irrelevant parts have been omitted, and the same or similar components are marked with the same reference numerals throughout the specification.

[0033] Furthermore, in multiple embodiments, the same reference numerals are used to describe only representative embodiments of the constituent elements having the same structure, while in other embodiments only structures different from the representative embodiments are described.

[0034] In the specification as a whole, when a part is described as being "connected (or combined)" with other parts, it includes not only the case of "direct connection (or combination)" but also the case of "indirect connection (or combination)" where other components are placed in between. Furthermore, when a part is described as "including" a constituent element, unless otherwise stated otherwise, it means that other constituent elements may be included, rather than excluding them.

[0035] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary knowledge in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having the same meaning as in the relevant technical context, and shall not be ideally or excessively interpreted as having a formal meaning unless expressly defined in this application.

[0036] Figure 1 The structure of a semiconductor manufacturing apparatus 1 according to the present invention is shown. (Refer to...) Figure 1 Semiconductor manufacturing equipment 1 may include index blocks 10, process cavities 20, substrate transfer blocks 30 for transferring substrates between index blocks 10 and process cavities 20, control devices 40, and gas supply systems 50. According to one embodiment of the present invention, the index blocks 10 and process cavities 20 may be arranged in a row. The process cavities 20 are arranged along the X-axis direction, and carriers C are arranged along the Y-axis direction in the loading port 12, forming a vertical direction in the Z-axis direction perpendicular to the X and Y axes. (See the accompanying drawings in this specification for example:) Figures 1 to 8 The X, Y, and Z coordinate axes shown in the diagram are arbitrarily set for ease of explanation.

[0037] The index block 10 includes a loading port 12 for placing a carrier C containing a substrate and an index frame 14 for removing a substrate from the carrier C placed at the loading port 12 or for moving a substrate that has undergone final processing into the carrier C. The loading port 12 is located on the opposite side of the process chamber 20, with reference to the index frame 14. Multiple carriers C containing substrates can be placed at the loading port 12.

[0038] An indexing robot 144 may be provided inside the indexing frame 14. The indexing robot 144 may be provided to be able to move along the track 142. The indexing robot 144 may receive a substrate from the carrier C and transfer it to the loading interlocked vacuum chamber 15 for temporary storage of the substrate, or receive a substrate temporarily stored in the loading interlocked vacuum chamber 15 and transfer it to the interior of the carrier C.

[0039] The process chamber 20, as an apparatus for performing process treatment on a substrate, may include one or more first chambers 220 and second chambers 240. For example, according to an embodiment of the present invention, the first chamber 220 may perform a modification process by supplying a modifying gas to the substrate to modify it, and an adsorption process by adsorbing a precursor onto the modified substrate; the second chamber 240 may perform an etching process by etching an metal oxide film adsorbed with the precursor.

[0040] The substrate transfer block 30 can be configured adjacent to the process chamber 20, receiving substrates from the loading interlock vacuum chamber 15 and transferring them to the process chamber 20, or transferring substrates from the process chamber 20 to the loading interlock vacuum chamber 15 after the processing is completed. The substrate transfer block 30 may include a track 330 configured along the direction of the process chamber 20 and a substrate transfer robot 340 that transfers substrates while moving along the track 330. The substrate transfer robot 340 can transfer substrates while moving within the internal space of the transport chamber 310.

[0041] The control device 40 can comprehensively control the operation of the semiconductor manufacturing equipment 1 configured as described above. For example, the control device 40 can be a computer, including a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and auxiliary storage devices. The CPU can operate based on programs or processing conditions stored in the ROM or auxiliary storage devices and control the overall operation of the semiconductor manufacturing equipment 1. Furthermore, programs that can be read by the computer can be stored on a storage medium. For example, the storage medium can be formed of a flexible optical disc, a CD (Compact Disc), a CD-ROM, a hard disk, flash memory, or a DVD. The control device 40 can be installed inside or outside the semiconductor manufacturing equipment 1. When the control device 40 is installed externally, it can control the semiconductor manufacturing equipment 1 via wired or wireless communication means.

[0042] The gas supply system 50 is provided for supplying precursor gas to the process chamber 20. The gas supply system 50 includes a gas supply device 60 for storing and supplying the precursor gas, and a valve box 70 disposed between the gas supply device 60 and the process chamber 20. The gas supply device 60 can supply precursor gas to the valve box 70 via a gas transfer line 61. Figure 3 The gas supply line 640 connected to the tank 630 inside the gas supply device 60 can be connected to the gas transmission line 61.

[0043] Gas supply unit 60 stores precursor gas and supplies precursor gas to process chamber 20 through valve box 70. Valve box 70 controls the gas supplied from gas supply unit 60 to supply the process chamber 20 at appropriate flow rate and temperature. Gas supply unit 60 can be implemented as a stand-alone device. Each process chamber 20 is equipped with valve box 70.

[0044] Gas supply unit 60 provides automatic and high-speed supply of precursors required for ALE and ALD processes to multiple process chambers 20 in a compact size.

[0045] The gas supply device 60 can be equipped with a canister and uses a heater and a cooler to regulate the temperature of the canister from 0°C to 150°C. Temperature can be individually regulated according to the characteristics of the substances stored in each canister.

[0046] The gas supply device 60 can supply etching precursors, including diketones, as well as -F and -Cl type precursor gases. The gas supply device 60 can store etching or vapor deposition precursors or other gases.

[0047] The tank 630 storing each precursor gas in the gas supply device 60 may be made of SUS material to minimize corrosivity. Alternatively, the tank may be made of Hastelloy material.

[0048] In the gas supply device 60, each precursor gas can be mixed with inert gases such as Ar, He, and N2 for supply. Alternatively, the gas supply device 60 can inject inert gases into each tank to supply precursor gases at the required pressure to the process chamber 20.

[0049] The gas supply device 60 can supply precursor gas to the process chamber 20 by directly bypassing it by injecting purge gas into the precursor gas, or by injecting a high-temperature inert gas to vaporize the liquid.

[0050] The gas supply device 60 can supply gas directly from the tank to the process chamber 20 through a compact construction. Alternatively, the gas supply device 60 can supply gas from an external tank more stably, at a higher speed, and automatically in a valve box 70 at the front end of the chamber supply.

[0051] Figure 2 The appearance of the gas supply device 60 is shown. Figure 3 The structure of a gas supply device 60 is shown. The gas supply device 60 includes a housing 610. The housing 610 provides space, both internally and externally, for mounting components used for gas supply and safety assurance. A door 611 is disposed at the front of the housing 610. Access to the interior of the housing 610 from the outside is possible through the door 611. A door intake 612 is formed in the door 611. To control the operation of the internal components of the housing 610, a door interlock that detects whether the door 611 is open or closed can be provided.

[0052] The front of the housing 610 includes an EMS (equipment monitoring system) 613 for monitoring the gas supply device 60 and a differential pressure sensor 614. The side of the housing 610 includes a signal tower 615 that visually outputs the status of the gas supply device 60. The top of the housing 610 includes an exhaust port 616 and an electrical control box 617. The side of the housing 610 includes a gas detector 618 for detecting gas leakage. The lower part of the housing 610 includes a liquid leak sensor 619 for detecting moisture leakage. Additionally, the interior of the housing 610 includes a flame sensor 609 for detecting whether a fire has occurred.

[0053] The gas supply device 60 includes a housing 610, a base 620 providing multiple tank mounting areas inside the housing 610, multiple tanks 630 disposed in the tank mounting areas, a gas supply line 640 forming a supply path for precursor gas from the tanks 630 to the process chamber 20, and a lifting unit 650 for lifting the tanks 630 from the base 620.

[0054] The base 620 forms a tank mounting area within the shell 610, where a tank 630 can be mounted. The base 620 can be formed into multiple layers. Tanks 630 can be mounted in each tank mounting area of ​​the base 620. Multiple tanks 630 can be mounted in multiple tank mounting areas. Each tank 630 can store the same or different types of precursor gases. The tank 630 is a container for storing gases.

[0055] Figure 4 The tank 630 is shown, along with a heating jacket 661 and a cooling jacket 662 attached to the tank 630. For precise temperature control of each tank 630, each tank 630 may be fitted with a temperature regulation mechanism. Figure 4 (a) shows the appearance of tank 630. Figure 4 (b) shows the state in which the heating jacket 661 is attached to the tank body 630. Figure 4 (c) shows the state in which the cooling jacket 662 is attached to the tank 630.

[0056] exist Figure 4 In (a), the tank body 630, together with the pipe hole 632 for connecting the gas supply pipe, has a mounting hole 631 for engaging with the heating jacket 661 or the cooling jacket 662. The tank body 630 can be engaged with the heating jacket 661 or the cooling jacket 662 through the mounting hole 631. Figure 4 In (b), a cylindrical heating jacket 661 is attached to the tank body 630. Figure 4 In (c), a cuboid-shaped cooling jacket 662 is attached to the tank body 630. Holes corresponding to the pipe hole 632 and the mounting hole 631 can be formed in both the heating jacket 661 and the cooling jacket 662. Figure 3 As shown, the tank can be stored in the base 620 with either a heating jacket 661 or a cooling jacket 662 attached to the tank body 630. A heat wire for heat dissipation via electrical energy can be installed in the heating jacket 661. A coolant flow path can be formed in the cooling jacket 662, allowing the flow of cooling fluid.

[0057] Each tank 630 can be individually equipped with cooling pipes and heaters to allow for appropriate temperature control based on the characteristics and type of the tank 630. To support this, the structure is designed to be electrically and software-controlled. In particular, the tank 630 can be designed to be easily disassembled and replaced, flexibly changing the temperature control method. The temperature application method utilizes heating jackets 661 or cooling jackets 662 that can be installed on the outside of the tank 630, allowing for replacement of the jackets or the application of new jackets as needed.

[0058] This design is optimized to quickly respond to various process requirements, while providing precision and flexibility in temperature management according to the tank.

[0059] Figure 5 as well as Figure 6 The partition wall 670 between the tank bodies 630 is shown. For example... Figure 5 As shown, in order to cut off thermal interference between tanks 630, partitions 670 that cut off temperature transmission can be provided between multiple tanks 630. For example... Figure 6 As shown, a flow path 671 for the flow of heat transfer fluid can be formed inside the partition 670. Figure 5 The middle tank 630 is integrated with the heating jacket 661. The partition wall 670 is designed as a heat-cut panel made of SUS (SteelUse Stainless) material, designed to effectively control the heat according to the characteristics of the ultra-high temperature and ultra-low temperature tank 630.

[0060] In particular, when extreme temperatures are required, temperature control can be achieved by forming a flow path 671 within the partition 670 to cut off the cooling effect through a high-temperature nitrogen supply, or by cutting off the heat through a PCW (Process Chilled Water) supply. This design minimizes thermal interference between the process cooling water and the heating jacket, ensuring temperature stability. High-temperature nitrogen or PCW is selectively supplied to the flow path 671 of the partition 670 as needed, based on the temperature characteristics of the tank 630. Through the construction described above, the temperature of the precursor gas in the tank 630 can be precisely managed. Here, "high temperature" refers to a temperature above ambient temperature (25°C).

[0061] On the other hand, the supply flow rate and supply temperature of the precursor gas from the tank 630 can vary according to the hardware characteristics of the tank 630, such as its size, shape, and position. The gas supply device 60 of the present invention includes a lifting unit 650 so that its position can be adjusted according to the size and shape of the tank 630.

[0062] Figure 7 The lifting unit 650 is shown. Figure 7 (a) shows the structure of the lifting unit 650. Figure 7 (b) shows the tank 630, whose height is adjusted via a lifting unit 650. Figure 7 In (b), the tank 630 is attached to the cooling jacket 662. The lifting unit 650 is provided for adjusting the height of the tank 630. The lifting unit 650 includes a support platform 651, a scissor lift type lifting drive unit 652 attached to the support platform 651, a lifting platform 653 that is raised and lowered by the lifting drive unit 652 and supports the tank 630 below, and a rotation drive unit 654 that drives the lifting drive unit 652 by rotational force.

[0063] The lifting drive unit 652 includes a scissor-shaped connecting structure connected in an X-shape. The upper end is connected to the lifting platform 653, and the lower end is mounted on a fixed support platform 651. The connecting element can be folded and unfolded by a hinge connection. The rotary drive unit 654 can be composed of an electric motor, a hydraulic motor, or a mechanical crank system. The rotary drive unit 654 generates rotational motion, which is then converted into linear motion. The rotary drive unit 654 transmits force to the lifting drive unit 652 via a mechanism such as a lead screw, cam, gear, or chain drive.

[0064] The rotary drive unit 654 generates rotary motion via an electric or hydraulic motor. This rotary motion is transmitted to a transmission mechanism such as a rotary shaft or lead screw and converted into linear motion. The rotary motion is converted into linear motion via a lead screw or cam mechanism. The linear motion pushes or pulls the support platform 651 of the scissor lift drive unit 652, causing the connecting member to fold or unfold, thereby producing the expansion and contraction of the scissor lift. If the lower connecting member is pushed, the X-shaped connecting member unfolds, the upper part rises, and the lifting platform 653 rises. Conversely, if the lower connecting member is pulled, the X-shaped connecting member folds, and the lifting platform 653 descends.

[0065] It can be done Figure 7 The structure allows for easy position adjustment even if the size and capacity of the tank 630 change. A wide range of height adjustment is ensured, and tanks 630 of various sizes and capacities can be stably installed on the base 620.

[0066] The precursor gas supplied from the gas supply unit 60 can be supplied to the process chamber 20 through the valve box 70. Figure 8 The valve box 70 is shown installed in the process chamber 20. Figure 9 The structure of valve box 70 is shown. Valve box 70 can be disposed outside process chamber 20. Valve box 70 includes valve box housing 710 disposed outside process chamber 20, gas supply pipe disposed inside valve box housing 710, valve structure 720, and temperature regulator 730 for controlling the internal temperature of valve box housing 710. Gas supply pipe and valve structure 720 may include gas supply pipe 721, front-end on / off valve 722, flow controller 723, and rear-end on / off valve 724. Temperature regulator 730 may be provided to enclose gas supply pipe and valve structure 720. Temperature regulator 730 may be a heating jacket or a cooling jacket.

[0067] One or more types of gases can be supplied to valve box 70 through inlet IN. The precursor gas flowing within the pipe of valve box 70 can be supplied to process chamber 20 through outlet OUT. The precursor gas and purge gas are mixed and supplied to process chamber 20. An on / off valve 740 can be installed at outlet OUT of valve box 70.

[0068] Valve box 70 is an IGS (Integrated Gas System) valve box. Valve box 70 is configured to prevent contamination and supply delay of precursor materials through temperature control of the valve and the valve box itself, and to accurately and rapidly inject the precursor ejected from the main end.

[0069] The existing equipment has the following structural limitations and problems. Two empty canisters are fixed in canister form next to process chamber 20, and supplementary precursor material is automatically supplied from a central supply unit in the lower equipment area. As each process chamber 20 can only accommodate one precursor gas, this structure is inefficient compared to multiple precursor supplies. During the transfer of precursor from the central supply unit to process chamber 20, temperature losses occur as it moves through long pipes, negatively impacting the temperature and flow uniformity of the precursor.

[0070] The valve box 70 has the following features and solves the problems of the prior art. It can be constructed in a compact size directly next to the process chamber 20, thus solving the temperature loss problem caused by long tubing. Precursor material can be effectively injected without a separate replenishment bottle. The temperature before injection of the precursor material can be accurately and stably controlled by ensuring the tubing is at the correct temperature through a heating mantle. The valve box 70 itself also has a heating pad, which is unaffected by external temperature changes and maintains the required temperature. Temperature sensors that measure the temperature of each tubing can be installed inside the valve box 70. The operation of the temperature regulator 730 for regulating the temperature of the precursor gas can be controlled based on the temperature measured by the temperature sensors.

[0071] In valve housing 70, the precursor supply line is constructed using IGS-type valves, enabling accurate and rapid injection without contamination or supply delay. The valve structure is designed to minimize heat loss, incorporating internal heat exchange wires to reduce the risk of precursor material deterioration. This maximizes stability to temperature and material properties, ensuring the precursor material remains in optimal condition during transport without deterioration.

[0072] The temperature of the precursor material is maintained and controlled by a heating jacket installed outside the pipe and internal heating wires inside the valve. The valve box 70 can maintain the required temperature through an internal heating plate and can also be cooled depending on the construction of the exhaust port.

[0073] According to the present invention, the ALD valve operates with an on / off speed of less than 5 ms, enabling precise and rapid gas injection. The ALD valve housing of the present invention is designed to be constructed using an integrated gas system (IGS), thereby reducing its size and achieving a fast response speed.

[0074] The ALD valve of this invention is designed with an on / off time of less than 5ms, enabling precise, high-speed injection during the process. This optimizes reaction speed while improving process efficiency and quality. The valve housing 70, composed of an integrated gas system, minimizes equipment size and allows for efficient configuration. The integrated design between components shortens gas flow response time and facilitates system maintenance and setup.

[0075] The valve box 70 is positioned as close as possible to the gas injection line into the chamber to minimize gas delivery time. The positions of each component are designed to prevent interference between parts, taking into account ease of installation and maintenance.

[0076] This embodiment and the accompanying drawings are merely illustrative of a portion of the technical concept included in this invention. It is obvious that variations and specific embodiments that can be readily derived by those skilled in the art within the scope of the technical concept included in the specification and drawings of this invention are all included within the scope of the claims of this invention.

[0077] Therefore, the concept of the present invention should not be limited to the illustrated embodiments, not only to the appended claims, but also to any equivalent or modified versions thereof.

Claims

1. A gas supply device, wherein, include: case; At the base, multiple tank mounting areas are provided inside the housing; Multiple tanks are disposed in the tank placement area; A gas supply line forms a supply path for precursor gas from the tank to the process chamber; as well as A lifting unit that raises or lowers the tank from the base.

2. The gas supply device according to claim 1, wherein, The tank is designed to be enclosed by a heating jacket.

3. The gas supply device according to claim 1, wherein, The tank is designed to be enclosed by a cooling jacket.

4. The gas supply device according to claim 1, wherein, A partition is provided between the multiple tanks to cut off the temperature transmission.

5. The gas supply device according to claim 4, wherein, A flow path for the heat transfer fluid is formed inside the partition.

6. The gas supply device according to claim 1, wherein, The lifting unit includes: Support platform; A scissor lift type lifting drive unit is combined with the support platform; A lifting platform, which is raised and lowered by the lifting drive unit and supports the tank below; and The rotary drive unit drives the lifting drive unit through rotational force.

7. A gas supply system, wherein, include: Gas supply device, which stores and supplies precursor gas; as well as The valve box is located between the gas supply device and the process chamber. The gas supply device includes: case; At the base, multiple tank mounting areas are provided inside the housing; Multiple tanks are disposed in the tank placement area; A gas supply line that forms a supply path for the precursor gas from the tank to the process chamber; and A lifting unit that raises or lowers the tank from the base.

8. The gas supply system according to claim 7, wherein, The valve box is located on the outside of the process cavity.

9. The gas supply system according to claim 8, wherein, The valve box includes: The valve box housing is located on the outside of the process cavity; The gas supply pipe and valve structure are disposed inside the valve box housing; and A temperature regulator controls the internal temperature of the valve box housing.

10. The gas supply system according to claim 7, wherein, The tank is designed to be enclosed by a heating jacket.

11. The gas supply system according to claim 7, wherein, The tank is designed to be enclosed by a cooling jacket.

12. The gas supply system according to claim 7, wherein, A partition is provided between the multiple tanks to cut off the temperature transmission.

13. The gas supply system according to claim 12, wherein, A flow path for the heat transfer fluid is formed inside the partition.

14. The gas supply system according to claim 7, wherein, The lifting unit includes: Support platform; A scissor lift type lifting drive unit is combined with the support platform; A lifting platform, which is raised and lowered by the lifting drive unit and supports the tank below; and The rotary drive unit drives the lifting drive unit through rotational force.

15. A semiconductor manufacturing apparatus, wherein, include: The process chamber is used to perform process treatments on the substrate. as well as The gas supply system supplies precursor gas to the process chamber. The gas supply system includes: A gas supply device for storing and supplying the precursor gas; and The valve box is located between the gas supply device and the process chamber. The gas supply device includes: case; At the base, multiple tank mounting areas are provided inside the housing; Multiple tanks are disposed in the tank placement area; A gas supply line that forms a supply path for the precursor gas from the tank to the process chamber; and A lifting unit that raises or lowers the tank from the base.

16. The semiconductor manufacturing apparatus according to claim 15, wherein, The valve box includes: The valve box housing is located on the outside of the process cavity; The gas supply pipe and valve structure are disposed inside the valve box housing; and A temperature regulator controls the internal temperature of the valve box housing.

17. The semiconductor manufacturing apparatus according to claim 15, wherein, The tank is designed to be enclosed by a heating jacket.

18. The semiconductor manufacturing apparatus according to claim 15, wherein, The tank is designed to be enclosed by a cooling jacket.

19. The semiconductor manufacturing apparatus according to claim 15, wherein, A partition is provided between the multiple tanks to cut off the temperature transmission. A flow path for the heat transfer fluid is formed inside the partition.

20. The semiconductor manufacturing apparatus according to claim 15, wherein, The lifting unit includes: Support platform; A scissor lift type lifting drive unit is combined with the support platform; A lifting platform, which is raised and lowered by the lifting drive unit and supports the tank below; and The rotary drive unit drives the lifting drive unit through rotational force.

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