A device and method for measuring the morphology of large-size curved crystals

By providing a wavelength-switchable light source unit and control unit to identify invalid measurement areas and switch measurement wavelengths, the problem of balancing high efficiency and high precision in the measurement of large-size wafer topography is solved. This method adapts to different process conditions and achieves efficient and reliable three-dimensional topography reconstruction.

CN122305979APending Publication Date: 2026-06-30SKYVERSE TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SKYVERSE TECH CO LTD
Filing Date
2026-04-02
Publication Date
2026-06-30

AI Technical Summary

Technical Problem

Existing technologies struggle to balance high efficiency and high precision in large-size wafer surface morphology measurement, and are not adaptable enough to process variations. White light interferometry is highly accurate but inefficient and can only measure one side, while double Fizeau interferometry is highly efficient but sensitive to changes in surface reflectivity and cannot reliably cope with complex and ever-changing actual process conditions.

Method used

A large-size wafer morphology measurement device is adopted, including a light source unit and a control unit. The light source unit provides a measurement beam with switchable wavelength. The control unit identifies invalid measurement areas based on interference fringe images and switches the measurement wavelength. The complete wafer morphology information is reconstructed through a multi-wavelength measurement process to adapt to different process conditions.

Benefits of technology

It enables efficient and reliable measurement of the three-dimensional morphology of large-size wafers under different process conditions, ensuring the integrity and accuracy of measurement results. It is applicable to bare silicon wafers and wafers with various coating processes, expanding the testing efficiency and process versatility of the equipment.

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Abstract

The large-size wafer topography measurement device provided in this application belongs to the field of semiconductor testing technology. It includes a light source unit for providing a wavelength-switchable measurement beam, a first interference unit for forming an interference fringe image, and a control unit configured to identify invalid measurement areas based on the interference fringe image. If an invalid measurement area exists, the light source unit is controlled to switch the measurement wavelength and remeasure the invalid measurement area. When the first wavelength causes partial or complete signal invalidity due to coating reflectivity mismatch, the system can automatically switch to a wavelength with a more matching reflectivity and only remeasure the invalid area. This directly overcomes the inherent limitations of fixed wavelength measurement, significantly expands the testing efficiency and process versatility of the equipment, and enables it to reliably measure various wafers, including bare silicon wafers and wafers with various coating processes.
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