Flow guide block for deposition process, upper cover plate structure and deposition equipment
By designing a flow guide block for deposition process, including trapezoidal cylinder and arc surface structure, the problem of concentrated flow of process gas to the edge area in the prior art is solved, and the air flow density in the central area of the reaction chamber is improved, ensuring that Film thickness uniformity in the central area of the film.
Patent Information
- Application Number
- CN202323575178.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-26
- Publication Date
- 2025-02-25
- Estimated Expiration
- 2033-12-26
AI Technical Summary
In existing deposition equipment, the planar bottom structure of the flow guide block causes process gas to be concentratedly directed to the edge area, resulting in a low airflow density in the central area of the reaction chamber, which in turn makes the film thickness in the central area of the film relatively low.
A flow guide block for a deposition process is designed, including a first flow guide portion and a second flow guide portion. The first flow guide is a trapezoidal cylinder with a narrow upper and wide upper lower, which is used to guide the process gas downward along the inclined surface; the second flow guide is a downwardly curved arc structure extending to the center of the flow guide block, which is used to make the The process gas flows to the center of the bottom of the arc structure.
Through this design, some process gases are directed to the central area of the reaction chamber, increasing the airflow density in the central area, thereby solving the problem of low film thickness in the central area of the film.
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Figure CN222524664U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor processing, and in particular to a guide block used in a deposition process, an upper cover plate structure, and a deposition device. Background Art
[0002] In a deposition device for semiconductor processing, an upper cover plate and a guide block can form an airflow chamber, and a process gas enters a reaction chamber through the guide block for performing a deposition process in the reaction chamber.
[0003] However, the oxide films prepared by current deposition equipment, such as flowable chemical vapor deposition equipment (Flowable CVD), usually have a lower film thickness (THK) at the center of the film. The reason is that the bottom of the guide block in the prior art is a planar structure. Therefore, the introduced process gas is diverted to its edge via the surface of the guide block, resulting in most of the process gas in the reaction chamber being concentrated and diverted to the edge area, and the central area of the reaction chamber has less airflow. In other words, the airflow density in the central area of the reaction chamber is low, which easily leads to the film thickness of the central area of the prepared film being lower than the film thickness of other areas.
[0004] In order to solve the above problems existing in the prior art, the art urgently needs a flow diversion technology for deposition process, which can prompt part of the process gas to flow to the central area of the reaction chamber, thereby increasing the air flow density in the central area and solving the problem of low film thickness in the central area of the prepared thin film. Utility Model Content
[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.
[0006] In order to overcome the above-mentioned defects of the prior art, the utility model provides a guide block for a deposition process, an upper cover plate structure, and a deposition device, which can prompt part of the process gas to flow to the central area of the reaction chamber, thereby increasing the air flow density in the central area and solving the problem of low film thickness in the central area of the prepared thin film.
[0007] Specifically, the above-mentioned guide block for deposition process provided according to the first aspect of the utility model includes: a first guide portion, including a trapezoidal cylinder which is narrow at the top and wide at the bottom, for guiding the process gas received from the upper end downward along the inclined surface of the trapezoidal cylinder; and a second guide portion, which is arranged under the first guide portion and includes a downward curved arc structure extending toward the center of the guide block, for guiding the process gas guided along the inclined surface to flow to the center of the bottom of the arc structure.
[0008] Furthermore, in some embodiments of the present invention, the angle between a line connecting a center point of the bottom of the arc structure of the second guide portion and an edge of its upper portion and a horizontal line is in a range of 15° to 45°.
[0009] Furthermore, in some embodiments of the present invention, the height dimension of the first guide portion ranges from 20 mm to 40 mm.
[0010] Furthermore, in some embodiments of the present invention, the width of the first guide portion ranges from 35 mm to 55 mm.
[0011] Furthermore, in some embodiments of the present invention, a preset position on the surface of the trapezoidal cylinder of the first guide portion includes an inflection point of the inclined plane, a first inclined plane above the inflection point of the inclined plane has a first inclination angle, and a second inclined plane below the inflection point of the inclined plane has a second inclination angle, wherein the first inclination angle is smaller than the second inclination angle.
[0012] Furthermore, in some embodiments of the present invention, the first inclination angle ranges from 0° to 30°, and the second inclination angle ranges from 80° to 140°.
[0013] Furthermore, in some embodiments of the present invention, the guide block is disposed in an upper cover plate structure of the reaction chamber, and the upper cover plate structure includes an upper opening, and the process gas flows in from a gap between the upper opening and the first guide portion.
[0014] Furthermore, in some embodiments of the present invention, the upper end of the first guide portion includes a spiral fixing portion for detachably fixing the guide block in the upper cover plate structure.
[0015] In addition, the above-mentioned upper cover plate structure provided according to the second aspect of the utility model includes: an upper cover plate body, covering the top of the reaction chamber, for providing a closed process environment; and the above-mentioned guide block for the deposition process provided by the first aspect of the utility model, which is arranged in the upper cover plate body, for introducing process gas into the reaction chamber to perform a deposition process.
[0016] In addition, the above-mentioned deposition equipment provided according to the third aspect of the utility model includes: a reaction chamber, the interior of which is used to perform a deposition process; and the above-mentioned upper cover plate structure provided by the second aspect of the utility model, which is used to introduce process gas into the reaction chamber to perform the deposition process. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.
[0018] Figure 1 A schematic cross-sectional structure diagram of an upper cover plate structure provided according to some embodiments of the utility model is shown; and
[0019] Figure 2 A schematic structural diagram of a guide block for a deposition process provided according to some embodiments of the utility model is shown.
[0020] Reference numerals:
[0021] 100 upper cover structure;
[0022] 110 upper cover body;
[0023] 120 upper opening;
[0024] 121 gap;
[0025] 200 guide block;
[0026] 210 first guide part;
[0027] 220 second guide part;
[0028] 230 Incline inflection point;
[0029] 231 First Incline;
[0030] 232 Second slope;
[0031] 240 spiral fixing part;
[0032] β first tilt angle;
[0033] γ second tilt angle;
[0034] A center point; and
[0035] B At the edge. DETAILED DESCRIPTION
[0036] The following specific embodiments illustrate the implementation of the utility model. Those skilled in the art can easily understand other advantages and functions of the utility model from the contents disclosed in this specification. Although the description of the utility model will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this utility model are limited to this implementation. On the contrary, the purpose of introducing the utility model in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the utility model. In order to provide an in-depth understanding of the utility model, the following description will include many specific details. The utility model can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the utility model, some specific details will be omitted in the description.
[0037] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0038] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.
[0039] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as the second component, region, layer and / or part without departing from some embodiments of the present invention.
[0040] As mentioned above, the oxide films prepared by current deposition equipment, such as flowable chemical vapor deposition equipment (Flowable CVD), usually have a lower film thickness (THK) at the center of the film. The reason is that the bottom of the guide block in the prior art is a planar structure. Therefore, the introduced process gas is diverted to its edge via the surface of the guide block, resulting in most of the process gas in the reaction chamber being concentrated and diverted to the edge area, and the central area of the reaction chamber has less airflow. In other words, the airflow density in the central area of the reaction chamber is low, which easily leads to the film thickness of the central area of the prepared film being lower than the film thickness of other areas.
[0041] In order to solve the above-mentioned problems existing in the prior art, the utility model provides a guide block for a deposition process, an upper cover plate structure, and a deposition device, which can prompt part of the process gas to flow to the central area of the reaction chamber, thereby increasing the air flow density in the central area and solving the problem of low film thickness in the central area of the prepared thin film.
[0042] In some non-limiting embodiments, the guide block for the deposition process provided by the first aspect of the present invention can be configured in the upper cover plate structure provided by the second aspect of the present invention. In addition, the upper cover plate structure provided by the second aspect of the present invention can be configured in the deposition device provided by the third aspect of the present invention.
[0043] Specifically, in some non-limiting embodiments, the deposition apparatus may include a reaction chamber and an upper cover plate structure. The interior of the reaction chamber may be used to perform a deposition process. The upper cover plate structure may cover the top of the reaction chamber and be used to introduce a process gas into the reaction chamber to perform a deposition process.
[0044] The working principle of the above-mentioned deposition equipment will be described below in combination with some examples of guide blocks and upper cover plate structures used in the deposition process. Those skilled in the art will understand that these examples of guide blocks and upper cover plate structures used in the deposition process are only some non-restrictive implementation methods provided by the utility model, which are intended to clearly demonstrate the main concept of the utility model and provide some specific solutions that are convenient for the public to implement, rather than to limit all working modes or all functions of the deposition equipment. Similarly, the deposition equipment is only a non-restrictive implementation method provided by the utility model, and does not constitute a limitation on the configuration body of these guide blocks and upper cover plate structures used in the deposition process.
[0045] Please see Figure 1 , Figure 1 A schematic cross-sectional structure diagram of an upper cover plate structure provided according to some embodiments of the utility model is shown.
[0046] like Figure 1As shown, in some embodiments of the present invention, the upper cover plate structure 100 may include: an upper cover plate body 110, which may cover the reaction chamber ( Figure 1 and a guide block 200 for a deposition process, which is disposed in the upper cover body 110 and is used to introduce process gases into the reaction chamber for performing a deposition process.
[0047] Specifically, in some optional embodiments, the upper cover plate body 110 may include an upper opening 120 , and a gap 121 is provided between the upper opening 120 and the guide block 200 , and the process gas may flow in from the gap 121 between the upper opening 120 and the guide block 200 .
[0048] Please see Figure 2 , Figure 2 A schematic structural diagram of a guide block for a deposition process provided according to some embodiments of the utility model is shown.
[0049] like Figure 2 As shown, in some embodiments of the present invention, the guide block 200 for the deposition process may include a first guide portion 210 and a second guide portion 220. The first guide portion 210 may include a trapezoidal cylinder that is narrow at the top and wide at the bottom, and may be used to guide the process gas received from the upper end downward along the inclined surface of the trapezoidal cylinder. The second guide portion 220 may be disposed below the first guide portion 210 and include a downwardly curved arc surface structure extending toward the center of the guide block 200, and may be used to guide the process gas under the inclined surface to flow toward the center of the bottom of the arc surface structure.
[0050] Furthermore, if Figure 2 As shown, in some preferred embodiments, the angle α between the line connecting the center point A of the bottom of the arc structure of the second guide portion 220 and the edge B of its upper portion and the horizontal line can be in the range of 15° to 45°, which is beneficial for the process gas guided down from the upper end to flow naturally to the bottom center of the second guide portion 220, so as to increase the gas flow density in the central area of the reaction chamber.
[0051] like Figure 2 As shown, in some optional embodiments, the height dimension range of the first guide portion 210 of the guide block 200 can be selected in the range of 20 mm to 40 mm, and the width dimension range of the first guide portion 210 can be selected in the range of 35 mm to 55 mm.
[0052] Furthermore, in some preferred embodiments, in order to improve the flow guiding speed of the first flow guiding portion 210 at the upper end of the flow guiding block 200, the gas flow guiding range of the second flow guiding portion 220 at the lower end of the flow guiding block 200 is also expanded. Figure 2As shown, a slope inflection point 230 can be set at a preset position on the surface of the trapezoidal cylinder of the first guide portion 210. Optionally, the slope inflection point 230 can be set at a position on the surface of the first guide portion 210 close to the second guide portion 220. The first slope 231 above the slope inflection point 230 has a first inclination angle β, and the second slope 232 below the slope inflection point 230 has a second inclination angle γ.
[0053] The first inclination angle β is preferably smaller than the second inclination angle γ. The first inclined surface 231 has a smaller first inclination angle β, which can help to increase the flow velocity of the process gas guided from top to bottom through the first guide portion 210. The second inclined surface 232 has a larger second inclination angle γ, which can help to diffuse the process gas guided from top to bottom as much as possible, so as to increase the distribution range of the process gas.
[0054] In some optional embodiments, the first inclination angle β may be in a range of 0° to 30°, and the second inclination angle γ may be in a range of 80° to 140°.
[0055] Continue as Figure 2 As shown, in some optional embodiments of the present invention, the upper end of the first guide portion 210 of the guide block 200 may include a spiral fixing portion 240. The spiral fixing portion 240 may be used to detachably fix the guide block 200 in the upper cover plate structure 100.
[0056] Those skilled in the art can understand that the above-mentioned solution of fixing the guide block 200 in the upper cover plate structure 100 based on the spiral fixing part 240 is only a non-limiting implementation method provided by the utility model, which is intended to clearly demonstrate the main concept of the utility model and provide a specific solution that is convenient for the public to implement, rather than to limit the protection scope of the utility model. Optionally, in other embodiments, those skilled in the art can also adopt other fixing methods based on the concept of the utility model to achieve the same technical effect.
[0057] In summary, the utility model provides a guide block for a deposition process, an upper cover plate structure, and a deposition device, which can cause part of the process gas to flow to the central area of the reaction chamber, thereby increasing the air flow density in the central area and solving the problem of low film thickness in the central area of the prepared thin film.
[0058] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A guide block for a deposition process, characterized in that: include: A first flow guide portion includes a trapezoidal cylinder that is narrow at the top and wide at the bottom, and is used to guide the process gas received from the upper end downward along the inclined surface of the trapezoidal cylinder; as well as The second guide portion is disposed below the first guide portion and comprises a downwardly curved arc surface structure extending toward the center of the guide block, and is used to guide the process gas guided by the inclined surface to flow toward the center of the bottom of the arc surface structure.
2. The guide block according to claim 1, characterized in that: The angle between the line connecting the center point of the bottom of the arc surface structure of the second guide portion and the edge of the upper portion and the horizontal line is in the range of 15° to 45°.
3. The guide block according to claim 1, characterized in that: The height of the first guide portion ranges from 20 mm to 40 mm.
4. The guide block according to claim 1, characterized in that: The width of the first guide portion ranges from 35 mm to 55 mm.
5. The guide block according to claim 1, characterized in that: A preset position on the surface of the trapezoidal cylinder of the first guide portion includes an inflection point of the inclined plane, a first inclined plane above the inflection point of the inclined plane has a first inclination angle, and a second inclined plane below the inflection point of the inclined plane has a second inclination angle, wherein the first inclination angle is smaller than the second inclination angle.
6. The guide block according to claim 5, characterized in that: The first inclination angle ranges from 0° to 30°, and the second inclination angle ranges from 80° to 140°.
7. The guide block according to claim 1, characterized in that: The guide block is arranged in the upper cover plate structure of the reaction chamber, and the upper cover plate structure comprises an upper opening, and the process gas flows in from a gap between the upper opening and the first guide portion.
8. The guide block according to claim 7, characterized in that: The upper end of the first guide portion includes a spiral fixing portion for detachably fixing the guide block in the upper cover plate structure.
9. An upper cover plate structure, characterized in that: include: The upper cover plate body covers the upper part of the reaction chamber and is used to provide a closed process environment; as well as The guide block for a deposition process as claimed in any one of claims 1 to 8 is arranged in the upper cover plate body and is used to introduce process gas into the reaction chamber to perform a deposition process.
10. A deposition device, characterized in that: include: A reaction chamber, the interior of which is used for performing a deposition process; as well as The upper cover plate structure described in claim 9 is used to introduce process gas into the reaction chamber to perform the deposition process.